AP2307GN-HF

AP2307GN RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline D ▼ Surface Mount Device BVDSS -16V RDS(ON) 60mΩ ID - 4A S SOT-23 Description G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G S The SOT-23 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units -16 V ±8 V 3 -4 A 3 -3.3 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current -12 A PD@TA=25℃ Total Power Dissipation 1.38 W Linear Derating Factor 0.01 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Data and specifications subject to change without notice Max. Value Unit 90 ℃/W 200801072-1/4 AP2307GN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Test Conditions Typ. Max. Units VGS=0V, ID=-250uA -16 - - V VGS=-4.5V, ID=-4A - - 60 mΩ VGS=-2.5V, ID=-3.0A - - 70 mΩ VGS=-1.8V, ID=-2.0A - - 90 mΩ VDS=VGS, ID=-250uA - - -1.0 V VDS=-5V, ID=-4A - 12 - S o VDS=-16V, VGS=0V - - -1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=-12V, VGS=0V - - -25 uA Gate-Source Leakage VGS=±8V - - ±100 nA ID=-4A - 15 24 nC Drain-Source Leakage Current (Tj=25 C) IGSS 2 Min. 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-12V - 1.3 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 4 - nC VDS=-10V - 8 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 11 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 54 - ns tf Fall Time RD=10Ω - 36 - ns Ciss Input Capacitance VGS=0V - 985 1580 pF Coss Output Capacitance VDS=-15V - 180 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 160 - pF Min. Typ. IS=-1.2A, VGS=0V - - -1.2 V IS=-4A, VGS=0V, - 39 - ns dI/dt=100A/µs - 26 - nC Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4 AP2307GN 16 14 -5.0V -4.5V -3.0V -2.5V T A =25 C -ID , Drain Current (A) 14 12 10 -5.0V -4.5V -3.0V -2.5V T A = 150 o C 12 -ID , Drain Current (A) o V G = - 1.8 V 8 6 10 V G = - 1.8 V 8 6 4 4 2 2 0 0 0 1 2 3 4 5 0 6 -V DS , Drain-to-Source Voltage (V) 2 4 6 8 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 70 1.6 I D =-3A ID= -4A V G = -4.5V T A =25 o C Normalized RDS(ON) 1.4 RDS(ON) (mΩ ) 60 50 1.2 1.0 0.8 40 0.6 1 3 5 7 9 -50 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 2.0 Normalized -VGS(th) (V) 1.5 -IS(A) 2 T j =150 o C T j =25 o C 1 0 1.0 0.5 0.0 0 0.2 0.4 0.6 0.8 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP2307GN f=1.0MHz 10000 I D =-4A V DS = -1 2 V 6 C (pF) -VGS , Gate to Source Voltage (V) 8 4 C iss 1000 2 C oss C rss 100 0 0 8 16 24 1 32 5 9 13 17 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100.00 Normalized Thermal Response (Rthja) Duty factor=0.5 10.00 -ID (A) 1ms 1.00 10ms 100ms 0.10 o T A =25 C Single Pulse 1s DC 0.01 0.2 0.1 0.1 0.05 PDM 0.01 t T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse Rthja = 270℃/W 0.001 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4/4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SOT-23 D Millimeters D1 E1 E e SYMBOLS MIN NOM MAX A 1.00 1.15 A1 0.00 -- 0.10 A2 0.10 0.15 0.25 D1 0.30 0.40 0.50 e 1.70 2.00 2.30 D 2.70 2.90 3.10 E 2.40 2.65 3.00 E1 1.40 1.50 1.60 1.30 1.All Dimension Are In Millimeters. A 2.Dimension Does Not Include Mold Protrusions. A2 A1 Part Marking Information & Packing : SOT-23 Part Number N9XX Sequence Number