AP9T18GH-HF

AP9T18GH-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Capable of 2.5V Gate Drive ▼ Fast Switching Characteristic 20V RDS(ON) 14mΩ ID G ▼ RoHS Compliant & Halogen-Free BVDSS 38A S Description AP9T18 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. G D S TO-252(H) o Absolute Maximum Ratings@Tj=25 C(unless otherwise specified) Symbol Parameter . Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage +16 V ID@TC=25℃ Drain Current, VGS @ 4.5V 38 A ID@TC=100℃ Drain Current, VGS @ 4.5V 24 A 140 A 31.3 W 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice 3 Value Units 4 ℃/W 62.5 ℃/W 1 201409014 AP9T18GH-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V RDS(ON) Static Drain-Source On-Resistance 2 VGS=4.5V, ID=18A - - 14 mΩ VGS=2.5V, ID=9A - - 28 mΩ 0.5 - 1.5 V - 33 - S VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA VDS=5V, ID=18A gfs Forward Transconductance IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+16V, VDS=0V - - +100 nA Qg Total Gate Charge ID=18A - 16 25 nC Qgs Gate-Source Charge VDS=16V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 9 - nC td(on) Turn-on Delay Time VDS=10V - 12 - ns tr Rise Time ID=18A - 80 - ns td(off) Turn-off Delay Time RG=3.3Ω - 22 - ns tf Fall Time VGS=5V - 12 - ns Ciss Input Capacitance VGS=0V - 1115 1790 pF Coss Output Capacitance VDS=20V Crss Rg - 280 - pF Reverse Transfer Capacitance . f=1.0MHz - 220 - pF Gate Resistance f=1.0MHz - 1.5 - Ω Min. Typ. IS=18A, VGS=0V - - 1.3 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=18A, VGS=0V, - 19 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 11 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9T18GH-HF 90 120 o o 5.0V 4.5V T C =25 C 100 5.0V 4.5V TC=150 C 80 ID , Drain Current (A) ID , Drain Current (A) 70 80 3.5V 60 40 2.5V 60 3.5V 50 40 30 2.5V 20 20 V G =1.5V 10 V G =1.5V 0 0 0 1 2 3 0 4 1 2 3 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 26 1.6 I D =18A V G =4.5V I D =9A o T C =25 C 1.4 18 . Normalized RDS(ON) RDS(ON) (mΩ) 22 1.2 1.0 14 0.8 10 0.6 0 2 4 6 8 10 -50 V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 10 8 Normalized VGS(th) IS(A) 1.5 6 T j =25 o C o T j =150 C 4 1 0.5 2 0 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9T18GH-HF f=1.0MHz 10000 10 V DS =10V V DS =12V V DS =16V 6 C (pF) VGS , Gate to Source Voltage (V) I D =18A 8 C iss 1000 4 C oss C rss 2 100 0 0 5 10 15 20 25 30 1 35 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 100 ID (A) Operation in this area limited by RDS(ON) 100us . 1ms 10 10ms 100ms DC o T C =25 C Single Pulse Normalized Thermal Response (Rthjc) 1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 0.1 1 10 100 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP9T18GH-HF MARKING INFORMATION 9T18GH Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence . 5