2N720A

TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/182 Devices Qualified Level JAN JANTX JANTXV 2N1893 2N1893S 2N720A MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage (RBE = 10 Ω) Collector Current @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range Total Power Dissipation Symbol All Devices Units VCEO VCBO VEBO VCER IC 80 120 7.0 100 500 2N720A 2N1893, S 0.5 0.8 1.8 3.0 -65 to +200 Vdc Vdc Vdc Vdc mAdc PT TJ, Tsrg TO-18 (TO-206AA)* 2N720A W 0 C THERMAL CHARACTERISTICS Characteristics Symbol 2N720A 2N1893, S Thermal Resistance, Junction-to-Case 97 58 RθJC 0 0 0 1) Derate linearly 2.86 mW/ C for 2N720A, 4.57 mW/ C for 2N1893, S TA > 25 C 2) Derate linearly 10.3 mW/0C for 2N720A, 17.2 mW/0C for 2N1893, S TC > 250C Unit C/W 0 TO-5* 2N1893, 2N1893S *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 30 mAdc Collector-Emitter Breakdown Voltage IC = 10 mAdc, RBE = 10 Ω Collector-Base Cutoff Current VCB = 120 Vdc VCB = 90 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc VEB = 5.0 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 V(BR)CEO V(BR)CER Vdc 80 Vdc 100 ICBO 10 10 IEBO 10 10 µAdc ηAdc µAdc ηAdc 120101 Page 1 of 2 2N720A; 2N1893; 2N1893S JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. hFE 20 35 40 120 Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 0.1 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc Base-Emitter Voltage IC = 150 mAdc, IB = 15 mAdc VCE(sat) 5.0 VBE(sat) 1.3 Vdc Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz Small-Signal Short-Circuit Forward Current Transfer Ratio VCE =5.0 Vdc, IC = 1.0 mAdc VCE =10 Vdc, IC = 5.0 mAdc, f = 1.0 kHz Small-Signal Short-Circuit Input Impedance VCB = 10 Vdc, IC = 5.0 mAdc Small-Signal Short-Circuit Output Admittance VCB = 10 Vdc, IC = 5.0 mAdc Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz hfe hfe hib 3.0 10 35 45 100 4.0 8.0 hob Cobo 0.5 2 15 Ω µΩ PF SWITCHING CHARACTERISTICS Turn-On Time + Turn-Off Time (See Figure 3 of MIL-PRF-19500/182) (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 t on + toff 30 ηs 120101 Page 2 of 2