600V 17A 0.380Ω
APT6038BLL APT6038SLL
BLL D3PAK
TO-247
POWER MOS 7
®
R
MOSFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
SLL
• Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT6038BLL_SLL UNIT Volts Amps
600 17 68 ±30 ±40 265 2.12 -55 to 150 300 17 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
960
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
600 0.380 100 500 ±100 3 5
(VGS = 10V, ID = 8.5A)
Ohms µA nA Volts
9-2004 050-7055 Rev B
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT6038BLL_SLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 17A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 17A @ 25°C RG = 1.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 17A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 400V VGS = 15V ID = 17A, RG = 5Ω
MIN
TYP
MAX
UNIT
1850 365 30 43 11 23 9 3 17 4 190 46 310 50
MIN TYP MAX UNIT Amps Volts ns µC nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
17 68 1.3 400 6.0 8
MIN TYP MAX
(Body Diode) (VGS = 0V, IS = - 17A)
Reverse Recovery Time (IS = -17A, dl S/dt = 100A/µs) Reverse Recovery Charge (IS = -17A, dl S/dt = 100A/µs) Peak Diode Recovery
d v/ dt 5
V/ns
THERMAL CHARACTERISTICS
Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient UNIT °C/W
0.47 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 6.64mH, RG = 25Ω, Peak IL = 17A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID17A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.50
Z JC, THERMAL IMPEDANCE (°C/W) θ
0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5
0.9
0.7
0.5
Note:
PDM t1 t2 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2
9-2004
0.3
050-7055 Rev B
0.1 0.05 10-4 SINGLE PULSE
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
50 45 40 35 30 25 20 15 10 5 0
APT6038BLL_SLL
VGS =15 &10V 8V 7V 6.5
RC MODEL Junction temp. (°C) 0.201 Power (watts) 0.271 Case temperature. (°C) 0.109F 0.00532F
6V
5.5V 5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
50 45
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @
很抱歉,暂时无法提供与“APT6038BLL_04”相匹配的价格&库存,您可以联系我们找货
免费人工找货