APTGF50DH120T

APTGF50DH120T Asymmetrical - Bridge NPT IGBT Power Module VBUS VBUS SENSE Q1 G1 CR3 VCES = 1200V IC = 50A @ Tc = 80°C Application · Welding converters · Switched Mode Power Supplies · Switched Reluctance Motor Drives Features · Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated · Kelvin emitter for easy drive · Very low stray inductance - Symmetrical design - Lead frames for power connections · Internal thermistor for temperature monitoring · High level of integration Benefits · Outstanding performance at high frequency operation · Stable temperature behavior · Very rugged · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Solderable terminals both for power and signal for easy PCB mounting · Easy paralleling due to positive TC of VCEsat · Low profile Max ratings 1200 75 50 150 ±20 312 150A @ 1200V Unit V APTGF50DH120T – Rev1 March, 2004 E1 OUT1 OUT2 Q4 G4 CR2 E4 0/VBU S SENSE NTC1 0/VBU S NTC2 VBUS SENSE G4 E4 OUT2 VBUS 0/VBUS OUT1 E1 G1 0/VBUS SENSE NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTGF50DH120T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 500 µA Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C VGE =15V Tj = 25°C IC = 50A Tj = 125°C VGE = VCE, IC = 1 mA VGE = 20 V, VCE = 0V Min 1200 Typ Max 500 2500 3.7 6.5 100 Unit V µA V V nA 3.2 4.0 4.5 Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Eon Eoff Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 600V IC = 50A Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 50A RG = 5 W Min Typ 3450 330 220 330 35 200 35 65 320 30 5.4 2.3 35 65 360 40 6.9 3.05 Max Unit pF nC ns mJ Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A RG = 5 W ns mJ Reverse diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle Min Tc = 70°C Tj = 125°C Tj = 25°C Tj = 125°C 580 1250 5350 Qrr Reverse Recovery Charge nC u Eon includes diode reverse recovery v In accordance with JEDEC standard JESD24-1 APT website – http://www.advancedpower.com 2-6 APTGF50DH120T – Rev1 March, 2004 trr Reverse Recovery Time IF = 100A IF = 200A IF = 100A IF = 100A VR = 800V di/dt =200A/µs IF = 100A VR = 800V di/dt =200A/µs Tj = 125°C Tj = 25°C Typ 100 2.0 2.3 1.8 420 Max 2.5 Unit A V ns APTGF50DH120T Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol