APTM50UM19S

APTM50UM19S Single switch Series & parallel diodes MOSFET Power Module SK CR1 D VDSS = 500V RDSon = 19mΩ max @ Tj = 25°C ID = 163A @ Tc = 25°C Application · · · Motor control Switched Mode Power Supplies Uninterruptible Power Supplies S Q1 G Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Low stray inductance - M6 power connectors - M4 signal connectors High level of integration · · · Benefits · · · Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 500 163 122 652 ±30 19 1136 46 50 2500 Unit V A V mW W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–7 APTM50UM19S – Rev 1 May, 2004 Tc = 25°C APTM50UM19S All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 500µA VGS = 0V,VDS= 500V VGS = 0V,VDS= 400V Tj = 25°C Tj = 125°C Min 500 Typ Max 200 1000 19 5 ±200 Unit V µA mW V nA VGS = 10V, ID = 81.5A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 163A Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 163A RG = 1W Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 163A, RG = 1Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 163A, RG = 1Ω Min Typ 22.4 4.8 0.36 492 132 260 18 35 87 77 3020 2904 4964 3384 µJ µJ ns Max Unit nF nC u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. Series diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/µs IF = 120A VR = 133V di/dt = 400A/µs Min Tc = 85°C Typ 120 1.1 1.4 0.9 31 60 120 500 Max 1.15 V Unit A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Qrr Reverse Recovery Charge nC APT website – http://www.advancedpower.com 2–7 APTM50UM19S – Rev 1 May, 2004 trr Reverse Recovery Time ns APTM50UM19S Parallel diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 100A IF = 200A IF = 100A IF = 100A VR = 400V di/dt = 200A/µs IF = 100A VR = 400V di/dt = 200A/µs Min Tc = 80°C Typ 100 1.6 1.9 1.4 180 220 390 1450 Max 1.8 V Unit A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Transistor Series diode Parallel diode 2500 -40 -40 -40 3 Min Typ Max 0.11 0.46 0.6 150 125 100 1.2 5 400 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 8V 7.5V 7V 6.5V 6V 5.5V 400 300 200 100 TJ=25°C TJ=125°C TJ=-55°C 0 25 0 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 180 160 140 120 100 80 60 40 20 0 RDS(on) Drain to Source ON Resistance 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0 VGS=10V VGS=20V 100 200 300 400 25 ID, Drain Current (A) 50 75 100 125 TC, Case Temperature (°C) 150 APT website – http://www.advancedpower.com 5–7 APTM50UM19S – Rev 1 May, 2004 APTM50UM19S RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss VGS, Gate to Source Voltage (V) 1000 limited by RDSon 2.5 2.0 1.5 1.0 0.5 0.0 ON resistance vs Temperature VGS=10V ID=81.5A -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 100 limited by RDSon 100µs 10 Single pulse TJ=150°C 1 1 1ms 10ms 100ms 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 VCE=100V ID=163A 12 T =25°C J V =250V CE 10 8 6 4 2 0 0 80 160 240 320 400 480 560 640 Gate Charge (nC) VCE=400V 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 APT website – http://www.advancedpower.com 6–7 APTM50UM19S – Rev 1 May, 2004 APTM50UM19S Delay Times vs Current 100 80 60 40 20 0 20 60 100 140 180 220 260 ID, Drain Current (A) Switching Energy vs Current 10 Switching Energy (mJ) 8 6 4 2 0 20 60 100 140 180 220 260 ID, Drain Current (A) Operating Frequency vs Drain Current 350 Frequency (kHz) 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 ID, Drain Current (A) VDS=333V D=50% RG=1Ω TJ=125°C VDS=333V RG=1Ω TJ=125°C L=100µH Rise and Fall times vs Current td(off) 120 100 tr and tf (ns) VDS=333V RG=1Ω TJ=125°C L=100µH td(on) and td(off) (ns) tf 80 60 40 20 0 20 td(on) tr 60 100 140 180 220 260 ID, Drain Current (A) Switching Energy vs Gate Resistance 16 Switching Energy (mJ) 14 12 10 8 6 4 2 0 0 2.5 5 7.5 10 12.5 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage Eon VDS=333V ID=163A TJ=125°C L=100µH VDS=333V RG=1Ω TJ=125°C L=100µH Eon Eoff Eoff IDR, Reverse Drain Current (A) 400 1000 TJ=150°C 100 10 TJ=25°C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 7–7 APTM50UM19S – Rev 1 May, 2004