MASW-005102-13600W

MASW-005102-13600 HMIC™ Silicon SP5T PIN Diode Switch with Integrated Bias Network Features        Rev. V2 Functional Diagrams Broad Bandwidth Specified up to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation Rugged, Glass Encapsulated Construction Fully Monolithic RoHS* Compliant Description The MASW-005102-13600 device is a SP4T broadband switch with integrated bias network utilizing MACOM's HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy. These high performance switches are suitable for use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5 V / -5 V, TTL controlled PIN diode driver, 80 ns switching speeds can be achieved. Yellow areas denote wire bond pads J1 Common Port DC Bias J2 J6 J3 J4 J5 Ordering Information Part Number Package MASW-005102-13600W Waffle Pack *Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MASW-005102-13600 HMIC™ Silicon SP5T PIN Diode Switch with Integrated Bias Network Rev. V2 Electrical Specifications: TA = +25°C, 10 mA (On-Wafer Measurements) Parameter Test Conditions Insertion Loss 2 GHz 6 GHz 12 GHz 18 GHz Units Min. Typ. Max. dB — — 0.9 1.2 1.8 1.5 1.0 1.5 2.1 Isolation 2 GHz 6 GHz 12 GHz 18 GHz dB 45 40 30 25 50 48 40 35 — Input Return Loss 6 GHz 12 GHz 18 GHz dB — 20 20 17 — Output Return Loss 2 GHz 6 GHz 12 GHz 18 GHz dB — 22 19 19 17 — Switching Speed1 10 GHz ns — 80 — 1. Typical switching speed is measured from (10% to 90% and 90% to 10% of detected RF voltage), driven by TTL compatible drivers. In the modulating state, (the switching port is modulating, all other ports are in steady state isolation.) The switching speed is measured using an RC network using the following values: R = 50 - 200 Ω, C = 390 - 1000 pF. Driver spike current, IC = C dv/dt, ratio of spike current to steady state current, is typically 10:1. Absolute Maximum Ratings2,3,4 Parameter Absolute Maximum RF CW Incident Power +33 dBm Reverse Voltage -50 V Bias Current per Port ±50 mA @ +25°C Junction Temperature +175°C Operating Temperature -65°C to +125°C Storage Temperature -65°C to +150°C Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity These electronic devices are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these Class 0 (HBM) and Class C1 (CDM).devices. 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. MACOM does not recommend sustained operation near these survivability limits. 4. Maximum operating conditions for a combination of RF power, DC bias and temperature: +33 dBm CW @ 15 mA (per diode) @ +85°C. 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MASW-005102-13600 HMIC™ Silicon SP5T PIN Diode Switch with Integrated Bias Network Rev. V2 Typical Performance Curves: Isolation vs. Frequency 0 -20 -1 -30 -2 -40 S21 (dB) S21 (dB) Insertion Loss vs. Frequency J2 J3 J4 J5 J6 -3 -4 -5 -50 J2 J3 J4 J5 J6 -60 2 4 6 8 10 12 14 16 -70 18 2 4 6 Frequency (GHz) Input Return Loss vs. Frequency 12 14 16 18 16 18 0 J2 J3 J4 J5 J6 -5 -10 -15 -15 -20 -20 -25 -25 2 4 6 8 10 12 Frequency (GHz) 14 J2 J3 J4 J5 J6 -5 S22 (dB) -10 S11 (dB) 10 Output Return Loss vs. Frequency 0 -30 8 Frequency (GHz) 16 18 -30 2 4 6 8 10 12 14 Frequency (GHz) 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MASW-005102-13600 HMIC™ Silicon SP5T PIN Diode Switch with Integrated Bias Network Rev. V2 Operation of the MASW-005102-13600 PIN Switch Operation of the HMIC Series of PIN switches is achieved by the simultaneous application of negative DC current to the low loss port and positive DC current to the remaining isolated switching ports per the Driver Connections table below. The control currents should be supplied by constant current sources. For insertion loss, -10 mA bias results in approximately -2 V, and for Isolation,+10 mA yields approximately +0.9 V at the respective bias nodes. The backside area of the die is the RF and DC return ground plane. Typical Bias Network J1 Input Common Port DC Bias J6 J2 J4 J5 J3 Typical Driver Connections DC Control Current (mA) RF Output States B2 B3 B4 B5 B6 J1-J2 J1-J3 J1-J4 J1-J5 J1-J6 -10 +10 +10 +10 +10 low loss Isolation Isolation Isolation Isolation +10 -10 +10 +10 +10 Isolation low loss Isolation Isolation Isolation +10 +10 -10 +10 +10 Isolation Isolation low loss Isolation Isolation +10 +10 +10 -10 +10 Isolation Isolation Isolation low loss Isolation +10 +10 +10 +10 -10 Isolation Isolation Isolation Isolation low loss 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MASW-005102-13600 HMIC™ Silicon SP5T PIN Diode Switch with Integrated Bias Network Rev. V2 MASW-005102-13600 Chip Dimensions5,6 5. Topside and backside metallization is gold, 2.5 µm thick typical. 6. Yellow areas indicate wire bonding pads. Mils DIM Millimeters Min. Max. Min. Max. A 54.0 55.0 1.37 1.40 B 27.0 28.0 0.69 0.71 C 30.0 31.0 0.76 0.79 D 31.0 32.0 0.79 0.81 E 19.0 20.0 0.48 0.51 F 118.5 120.5 3.01 3.06 G 35.0 36.0 0.89 0.91 RF Bond Pads (J1 - J6) 7.0 x 5.0 ref. 0.178 x 0.127 ref. DC Bond Pads (B2 - B6) 5.0 x 5.0 ref. 0.127 x 0.127 ref. Chip Thickness 5.0 ref. 0.127 ref. 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MASW-005102-13600 HMIC™ Silicon SP5T PIN Diode Switch with Integrated Bias Network Rev. V2 Cleanliness Chip Mounting The chips should be handled in a clean environment free of dust and organic contamination. HMIC switches have Ti-Pt-Au backside metallization and can be mounted using a gold-tin eutectic solder or conductive epoxy. Mounting surface must be free of contamination and flat. Wire / Ribbon Bonding Thermo compression wedge bonding using 0.003” x 0.00025” ribbon or 0.001” diameter gold wire is recommended. A work stage temperature of 150°C - 200°C, tool tip temperature of 120°C - 150° and a downward force of 18 to 22 grams should be used. If ultrasonic energy is necessary, it should be adjusted to the minimum level required to achieve a good bond. Excessive power or force will fracture the silicon beneath the bond pad causing it to lift. RF bond wires and ribbons should be kept as short as possible for optimum RF performance. Eutectic Die Attachment An 80/20, gold-tin, eutectic solder is recommended. Adjust the work surface temperature to 255oC and the tool tip temperature to 265oC. After placing the chip onto the circuit board re-flow the solder by applying hot forming gas (95/5 Ni/H) to the top surface of the chip. Temperature should be approximately 290oC and not exceed 320oC for more than 20 seconds. Typically no more than three seconds is necessary for attachment. Solders rich in tin should be avoided Epoxy Die Attachment A minimum amount of epoxy, 1 - 2 mils thick, should be used to attach chip. A thin epoxy fillet should be visible around the outer perimeter of the chip after placement. Epoxy cure time is typically 1 hour at 150°C. 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support