APM2014NUC-TRL

APM2014NU N-Channel Enhancement Mode MOSFET Features • 20V/40A, RDS(ON)=12mΩ (typ.) @ VGS=4.5V RDS(ON)=18mΩ (typ.) @ VGS=2.5V Pin Description G D S • • • Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of TO-252 D Applications • Power Management in Desktop Computer or DC/DC Converters G S N-Channel MOSFET Ordering and Marking Information APM2014N Lead Free Code Handling Code Temp. Range Package Code Package Code U : TO-252 Operating Junction Temp. Range C : -55 to 150 ° C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM2014N U : APM2014N XXXXX Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 1 www.anpec.com.tw APM2014NU Absolute Maximum Ratings Symbol Parameter Rating 20 ±16 150 -55 to 150 TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C 16 100 75 40* 25 50 20 2.5 W °C/W V °C °C A Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP ID PD RθJC 300µs Pulse Drain Current Tested A Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case 2 A Mounted on PCB of 1in pad area IDP ID PD RθJA 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C 100 75 10 6 2.5 1 50 W °C/W A A Mounted on PCB of Minimum Footprint IDP ID PD RθJA Note: * Current limited by bond wire. 300µs Pulse Drain Current Tested TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C 100 75 9 6 1.6 0.6 75 A Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient A W °C/W Copyright © ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 2 www.anpec.com.tw APM2014NU Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current VGS=0V, IDS=250µA VDS=16V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±16V, VDS=0V VGS=4.5V, IDS=10A VGS=2.5V, IDS=5A 12 18 0.7 0.9 20 1 30 1.5 ±100 14 25 V µA V nA mΩ Parameter (TA = 25°C unless otherwise noted) APM2014NU Min. Typ. Max. Test Condition Unit RDS(ON) a Drain-Source On-state Resistance Diode VSDa RG Ciss Coss Crss td(ON) Tr td(OFF) Tf trr b b Diode Forward Voltage b ISD=4A, VGS=0V VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=6Ω 0.8 1.3 V Ω pF Dynamic Characteristics Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Reverse Recovery Time Reverse Recovery Charge b 1.7 1290 300 210 10 15 28 17 20 9 20 29 52 33 ns Qrr ISD=10A, dISD/dt =100A/µs ns nC Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. 18.2 VDS=10V, VGS=4.5V, IDS=5A 5.6 4.8 24 nC Copyright © ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 3 www.anpec.com.tw APM2014NU Typical Characteristics Power Dissipation 60 Drain Current 50 50 40 40 ID - Drain Current (A) Ptot - Power (W) 30 30 20 20 10 TC=25 C o 10 TC=25 C,VG=4.5V o 0 0 20 40 60 80 100 120 140 160 180 0 0 20 40 60 80 100 120 140 160 180 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area 200 100 Lim it Thermal Transient Impedance 2 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Mounted on 1in pad o RθJA :50 C/W 2 10ms 100ms 10 1s DC 1 0.1 0.1 TC=25 C 1 10 70 o Normalized Effective Transient ID - Drain Current (A) Rd s(o n) Single Pulse 0.01 1E-4 1E-3 0.01 0.1 1 10 100 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright © ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 4 www.anpec.com.tw APM2014NU Typical Characteristics (Cont.) Output Characteristics 100 VGS=5,6,7,8,9,10V 90 80 40 36 Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ) 4V 32 28 24 20 16 12 8 4 VGS=2.5V ID - Drain Current (A) 70 60 50 40 30 20 10 0 0 1 2 3 2.5V 2V 4 5 3V VGS=4.5V 0 0 20 40 60 80 100 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 100 90 80 Tj=-55 C 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 Tj=25 C Tj=125 C o o o Gate Threshold Voltage 1.6 IDS =250µA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 Normalized Threshold Vlotage ID - Drain Current (A) 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright © ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 5 www.anpec.com.tw APM2014NU Typical Characteristics (Cont.) Drain-Source On Resistance 2.2 2.0 VGS = 4.5V IDS = 10A Source-Drain Diode Forward 30 Normalized On Resistance 1.8 10 IS - Source Current (A) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 RON@Tj=25 C: 12mΩ 50 75 100 125 150 o Tj=150 C o 1 Tj=25 C o 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance 2100 Frequency=1MHz 1800 5 VDS=10V ID = 5A Gate Charge VGS - Gate-source Voltage (V) 20 4 C - Capacitance (pF) 1500 Ciss 1200 900 600 Coss 300 0 Crss 0 4 8 12 16 3 2 1 0 0 4 8 12 16 20 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright © ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 6 www.anpec.com.tw APM2014NU Package Information TO-252 (Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 L b e1 D1 C A1 E1 Dim A A1 b b2 C C1 D D1 E E1 e1 H L L1 L2 Millimeters Min. 2.18 0.89 0.508 5.207 0.46 0.46 5.334 5.2 REF 6.35 5.3 REF 3.96 9.398 0.51 0.64 0.89 1.02 2.032 7 Inches Max. 2.39 1.27 0.89 5.461 0.58 0.58 6.22 6.73 5.18 10.41 Min. 0.086 0.035 0.020 0.205 0.018 0.018 0.210 0.205 REF 0.250 0.209 REF 0.156 0.370 0.020 0.025 0.035 0.040 0.080 www.anpec.com.tw Max. 0.094 0.050 0.035 0.215 0.023 0.023 0.245 0.265 0.204 0.410 Copyright © ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 APM2014NU Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) TP Ramp-up tp Critical Zone T L to T P Temperature TL Tsmax tL Tsmin Ramp-down ts Preheat 25 t 25 °C to Peak Time Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate 3°C/second max. 3°C/second max. (TL to TP) Preheat 100°C 150°C - Temperature Min (Tsmin) 150°C 200°C - Temperature Max (Tsmax) 60-120 seconds 60-180 seconds - Time (min to max) (ts) Time maintained above: 183°C 217°C - Temperature (T L) 60-150 seconds 60-150 seconds - Time (tL) Peak/Classificatioon Temperature (Tp) See table 1 See table 2 Time within 5°C of actual 10-30 seconds 20-40 seconds Peak Temperature (tp) Ramp-down Rate 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright © ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 8 www.anpec.com.tw APM2014NU Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s 3 3 P ackage Thickness Volume mm Volume mm < 350 ≥ 350 < 2.5 mm 240 +0/-5 ° C 225 +0/-5 ° C ≥ 2.5 mm 225 +0/-5 ° C 225 +0/-5 ° C Table 2. Pb-free Process – Package Classification Reflow Temperatures 3 3 3 P ackage Thickness Volume mm Volume mm Volume mm < 350 3 50-2000 > 2000 < 1.6 mm 260 +0 ° C* 260 +0 ° C* 260 +0 ° C* 1 .6 mm – 2.5 mm 260 +0 ° C* 250 +0 ° C* 245 +0 ° C* ≥ 2.5 mm 250 +0 ° C* 245 +0 ° C* 245 +0 ° C* * Tolerance: The device manufacturer/supplier s hall a ssure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0 ° C. For example 260 ° C+0 ° C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright © ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 9 www.anpec.com.tw APM2014NU Carrier Tape & Reel Dimensions (Cont.) T2 J C A B T1 Application A 330 ±3 B 100 ± 2 D 1.5 +0.1 C 13 ± 0. 5 D1 J 2 ± 0.5 Po T1 T2 16.4 + 0.3 2.5± 0.5 -0.2 P1 2.0 ± 0.1 Ao W 16+ 0.3 - 0.1 Bo P 8 ± 0.1 Ko 2.5± 0.1 E 1.75± 0.1 t 0.3±0.05 TO-252 F 7.5 ± 0.1 1.5± 0.25 4.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 (mm) Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright © ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 10 www.anpec.com.tw