APM2801BC-TR

APM2801B P-Channel Enhancement Mode MOSFET with Schottky Diode Features MOSFET Pin Description • -20V/-1.5A , RDS(ON)=145mΩ(typ.) @ VGS=-4.5V RDS(ON)=180mΩ(typ.) @ VGS=-2.5V • • • • Super High Dense Cell Design Reliable and Rugged Top View of SOT-25 (2)S (4)C Lead Free Available (RoHS Compliant) Low Forward Voltage (1)G SBD Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems (5)D (3)A P-Channel MOSFET SBD Ordering and Marking Information APM2801 Lead Free Code Handling Code Temp. Range Package Code Package Code B : SOT-25 Operating Junction Temp. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM2801B : M81X Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © A NPEC Electronics Corp. Rev. B.4 - Jun., 2005 1 www.anpec.com.tw APM2801B Absolute Maximum Ratings Symbol [MOSFET] VDSS VGSS ID IDM IS TJ TSTG PD RθJA* [SBD] VRRM IFSM Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec. Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C VGS=-4.5V -20 ±10 -1.5 -6 -1 150 -55 to 150 0.83 0.3 150 W °C/W V A A °C (TA = 25°C unless otherwise noted) Parameter Rating Unit Repetitive Peak Reverse Voltage Maximum Peak Forward Surge Current 20 5.5 V A Electrical Characteristics Symbol [MOSFET] Static Characteristics Parameter (TA = 25°C unless otherwise noted) APM2801B Min. Typ. Max. Test Condition Unit BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA IDSS VGS(th) IGSS RDS(ON) VSDa a -20 -1 -30 -0.45 -0.6 145 180 -0.7 -1 ±100 190 235 -1.3 V µA V nA mΩ V Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage VDS=-16V, VGS=0V TJ=85°C VDS=VGS, IDS=-250µA VGS=±10V, VDS=0V VGS=-4.5V, IDS=-1.5A VGS=-2.5V, IDS=-1A ISD=-0.5A , VGS=0V Copyright © A NPEC Electronics Corp. Rev. B.4 - Jun., 2005 2 www.anpec.com.tw APM2801B Electrical Characteristics (Cont.) Symbol [MOSFET] Dynamic Characteristics b Ciss Coss Crss td(ON) Tr td(OFF) Tf Qg Qgs Qgd [SBD] VR VF1 VF2 IR C b (T A = 25°C unless otherwise noted) APM2801B Min. Typ. Max. Parameter Test Condition Unit Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VGS=0V, VDS=-20V, Frequency=1.0MHz VDD=-10V, RL=10Ω, IDS=-1A, VGEN=-4.5V, RG=6Ω 255 70 45 6 8 9.8 5 10 12 15 10 ns pF Gate Charge Characteristics b Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=-10V, VGS=-4.5V, IDS=-1.5A 4 0.6 0.7 6 nC Reverse Voltage Forward Voltage Reverse Current Junction Capacitance IR=0.5mA IF=10mA IF=500mA VR=15V VR=10V, Frequency=1.0MHz 20 0.4 0.5 200 45 V V V µA pF Notes: a : Pulse test ; pulse width ≤ 300µs, duty cycle ≤ 2%. b : Guaranteed by design, not subject to production testing. Copyright © A NPEC Electronics Corp. Rev. B.4 - Jun., 2005 3 www.anpec.com.tw APM2801B Typical Characteristics P-Channel MOSFET Power Dissipation 1.0 2.0 Drain Current 0.8 1.6 -ID - Drain Current (A) Ptot - Power (W) 0.6 1.2 0.4 0.8 0.2 0.4 0.0 0.0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 20 10 Thermal Transient Impedance 2 1 Duty = 0.5 -ID - Drain Current (A) Lim it Rd s(o n) 300µs 1ms 10ms 100ms 1s DC 1 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse Mounted on 1in pad o RθJA : 150 C/W 2 0.1 0.01 0.01 TA=25 C o 0.1 1 10 100 0.01 1E-4 1E-3 0.01 0.1 1 10 30 -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright © A NPEC Electronics Corp. Rev. B.4 - Jun., 2005 4 www.anpec.com.tw APM2801B Typical Characteristics (Cont.) Output Characteristics 10 VGS= -3 thru -10V 8 -2V -2.5V Drain-Source On Resistance 0.28 VGS= -2.5V 0.24 RDS(ON) - On - Resistance (Ω) -ID - Drain Current (A) 0.20 6 0.16 VGS= -4.5V 4 0.12 2 0.08 0 0 1 2 3 4 0.04 0 2 4 6 8 10 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics 6 Gate Threshold Voltage 1.8 1.6 IDS = -250µA Normalized Threshold Voltage 5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 -ID - Drain Current (A) 4 3 2 Tj=-55 C Tj=25 C Tj=125 C o o o 1 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 25 50 75 100 125 150 -VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright © A NPEC Electronics Corp. Rev. B.4 - Jun., 2005 5 www.anpec.com.tw APM2801B Typical Characteristics (Cont.) Drain-Source On Resistance 1.8 VGS = -4.5V 1.6 IDS = -1.5A Tj=150 C o Source-Drain Diode Forward 6 Normalized On Resistance 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 RON@Tj=25 C: 145mΩ 0 25 50 75 100 125 150 o -IS - Source Current (A) 1 Tj=25 C o 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Capacitance 500 Frequency=1MHz 5 VDS=-10 V IDS=-1.5 A 4 Gate Charge 400 Ciss 300 -VGS - Gate - source Voltage (V) C - Capacitance (pF) 3 200 2 100 Coss Crss 0 1 0 0 4 8 12 16 20 0 1 2 3 4 5 -VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright © A NPEC Electronics Corp. Rev. B.4 - Jun., 2005 6 www.anpec.com.tw APM2801B Typical Characteristics (Cont.) SBD IF - VF 6 IR - VR 0.1 IR - Reverse Current (A) IF - Forward Current (A) 1 o C 125 T A= o C =25 TA 0.01 150 C o 1E-3 100 C 75 C o o 75 o 5 C 0o C 1E-4 0.1 50 C o 1E-5 10 o 0C TA=25 C o 1E-6 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1E-7 0 3 6 9 12 15 VF - Forward Voltage (V) VR - Reverse Voltage (V) C - VR 200 Frequency=1MHz C - Capacitance (pF) 150 100 50 0 0 5 10 15 20 25 VR - Reverse Voltage (V) Copyright © A NPEC Electronics Corp. Rev. B.4 - Jun., 2005 7 www.anpec.com.tw APM2801B Packaging Information SOT-23-5 e1 5 4 E1 E 1 2 3 e b D A2 A a L1 A1 L2 L D im A A1 A2 b D E E1 e e1 L L1 L2 N α Millimeters Min. 0 .95 0.05 0.90 0 .30 2 .8 2 .6 1.5 0 .95BSC 1.90BSC 0 .35 0.20 BSC 0.5 5 0° 10° 0° 0.7 0.020 0.55 0.014 Max. 1.45 0.15 1.30 0.50 3.00 3.00 1.70 Min. 0.037 0.002 0.035 0.011 0.110 0.102 0.059 I nches Max. 0.057 0.006 0.051 0.019 0.118 0.118 0.067 0.037BSC 0.074BSC 0.022 0.008 BSC 0.028 5 10° Copyright © A NPEC Electronics Corp. Rev. B.4 - Jun., 2005 8 www.anpec.com.tw APM2801B Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) TP Ramp-up tp Critical Zone T L to T P Temperature TL Tsmax tL Tsmin Ramp-down ts Preheat 25 t 2 5 °C to Peak Time Classificatin Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate 3°C/second max. 3°C/second max. (TL to TP) Preheat 100°C 150°C - Temperature Min (Tsmin) 150°C 200°C - Temperature Max (Tsmax) 60-120 seconds 60-180 seconds - Time (min to max) (ts) Time maintained above: 183°C 217°C - Temperature (T L) 60-150 seconds 60-150 seconds - Time (tL) Peak/Classificatioon Temperature (Tp) See table 1 See table 2 Time within 5°C of actual 10-30 seconds 20-40 seconds Peak Temperature (tp) Ramp-down Rate 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright © A NPEC Electronics Corp. Rev. B.4 - Jun., 2005 9 www.anpec.com.tw APM2801B Classificatin Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s P ackage Thickness Volume mm 3 Volume mm 3 < 350 ≥ 350 < 2.5 mm °C 240 +0/-5 225 +0/-5 ° C ≥ 2.5 mm 225 +0/-5 ° C 225 +0/-5 ° C T able 2. Pb-free Process – Package Classification Reflow Temperatures P ackage Thickness Volume mm 3 Volume mm 3 Volume mm 3 < 350 3 50-2000 > 2000 < 1.6 mm 260 +0 ° C* 260 +0 ° C* 260 +0 ° C* 1 .6 mm – 2.5 mm 260 +0 ° C* 250 +0 ° C* 245 +0 ° C* ≥ 2.5 mm 250 +0 ° C* 245 +0 ° C* 245 +0 ° C* * Tolerance: The device manufacturer/supplier s hall a ssure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0 ° C. For example 260 ° C+0 ° C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright © A NPEC Electronics Corp. Rev. B.4 - Jun., 2005 10 www.anpec.com.tw APM2801B Carrier Tape & Reel Dimensions (Cont.) T2 J C A B T1 Application A 178±1 B C J T1 8.4 ± 2 P1 T2 1.5± 0.3 Ao 72 ± 1.0 13.0 + 0.2 2.5 ± 0.15 D D1 1.5 +0.1 Po 4.0 ± 0.1 W 8.0+ 0.3 - 0.3 Bo P 4 ± 0.1 Ko 1.4± 0.1 E 1.75± 0.1 t 0.2±0.03 SOT-23-5 F 3.5 ± 0.05 1.5 +0.1 2.0 ± 0.1 3.15 ± 0.1 3.2± 0.1 (mm) Cover Tape Dimensions Application SOT-23-5 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright © A NPEC Electronics Corp. Rev. B.4 - Jun., 2005 11 www.anpec.com.tw