AO3406L_104

AO3406 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250PA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250PA 1 ID(ON) On state drain current VGS=10V, VDS=5V 15 TJ=55°C VGS=10V, ID=3.6A Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr A 75 105 VDS=5V, ID=3.6A 7 DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance V VGS=4.5V, ID=2.8A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current Rg 3 100 Forward Transconductance Crss nA 74 TJ=125°C VSD Output Capacitance 1.9 0.79 288 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=3.6A PA 100 65 gFS Coss 5 50 Static Drain-Source On-Resistance Units V VDS=24V, VGS=0V Zero Gate Voltage Drain Current IS Max 30 IDSS RDS(ON) Typ m: m: S 1 V 2.5 A 375 pF 57 pF 39 pF 3 6 : 6.5 8.5 nC 3.1 4 nC 1.2 nC 1.6 nC 4.6 ns VGS=10V, VDS=15V, RL=2.2:, RGEN=3: 1.9 ns 20.1 ns IF=3.6A, dI/dt=100A/Ps 10.2 2.6 Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=3.6A, dI/dt=100A/Ps ns 14 3.5 ns nC A: The value of R TJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t” 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R TJA is the sum of the thermal impedence from junction to lead RTJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 Ps pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 5 : July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha and Omega Semiconductor, Ltd. AO3406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 10V 4.5V 8 12 6V VDS=5V 4V 6 ID(A) ID (A) 9 3.5V 4 6 125°C VGS=3V 3 2 0 25°C 0 0 1 2 3 4 5 1.5 2 100 3 3.5 4 4.5 5 Normalized On-Resistance 1.8 90 RDS(ON) (m:) 2.5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=4.5V 80 70 60 50 VGS=10V 40 ID=3.6A 1.6 VGS=4.5V VGS=10V 1.4 1.2 1 0.8 0 2 4 6 8 10 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 200 ID=3.6A 1.0E+00 125° 150 100 IS (A) RDS(ON) (m:) 1.0E-01 125°C 1.0E-02 25° 1.0E-03 50 25 C 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2