AO4435L_101

AO4435 30V P-Channel MOSFET General Description Product Summary The AO4435 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. VDS = -30V ID = -10.5A (VGS = -20V) RDS(ON) < 14mΩ (VGS = -20V) RDS(ON) < 18mΩ (VGS = -10V) RDS(ON) < 36mΩ (VGS = -5V) -RoHS Compliant -AO4435 is Halogen Free 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A Pulsed Drain Current Power Dissipation A -30 Units V ±25 V Maximum -10.5 TA=70°C B TA=25°C ID -8 IDM -80 3.1 PD TA=70°C A W 2.0 Avalanche Current B IAR -20 A Repetitive avalanche energy 0.3mH B EAR 60 mJ Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady State Steady State Alpha & Omega Semiconductor, Ltd. RθJA RθJL Typ 32 60 17 Max 40 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4435 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID = -250µA, VGS = 0V -30 Gate-Body leakage current VDS = 0V, VGS = ±25V VDS = VGS ID = -250µA -1.7 ID(ON) On state drain current VGS = -10V, VDS = -5V -80 VGS = -20V, ID = -11A TJ=125°C 27 36 Maximum Body-Diode Continuous Current mΩ 22 S -0.74 DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance A VGS = -5V, ID = -5A IS Rg 14 18 IS = -1A,VGS = 0V Output Capacitance 11 15 VDS = -5V, ID = -10A Reverse Transfer Capacitance V 19 Diode Forward Voltage Crss nA -3 15 Forward Transconductance Coss ±100 -2.3 VGS = -10V, ID = -10A gFS µA -5 Gate Threshold Voltage VSD Units -1 TJ = 55°C VGS(th) Static Drain-Source On-Resistance Max V VDS = -30V, VGS = 0V IGSS RDS(ON) Typ 1130 VGS=0V, VDS=-15V, f=1MHz -1 V -3.5 A 1400 pF 240 pF 155 pF 5.8 8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 18 24 nC Qg(4.5V) Total Gate Charge 9.5 Qgs Gate Source Charge VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-10A 1 5.5 nC Qgd Gate Drain Charge 3.3 nC tD(on) Turn-On DelayTime 8.7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=-10A, dI/dt=100A/µs 25 Qrr Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs 12 VGS=-10V, VDS=-15V, RL=1.5Ω, RGEN=3Ω 8.5 ns 18 ns 7 ns 30 ns nC A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using