AOT11N70/AOTF11N70
700V,11A N-Channel MOSFET
General Description
Product Summary
The AOT11N70 & AOTF11N70 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
800V@150℃
11A
RDS(ON) (at VGS=10V)
< 0.87Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT11N70L & AOTF11N70L
Top View
D
TO-220F
TO-220
G
D
G
S
G
D
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT11N70
Drain-Source Voltage
VDS
700
Gate-Source Voltage
±30
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
AOTF11N70
V
11
ID
Units
V
11*
7.2
7.2*
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
4
A
Repetitive avalanche energy C
EAR
120
mJ
Single plused avalanche energy G
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
EAS
dv/dt
240
5
mJ
V/ns
W
43
271
PD
TJ, TSTG
-55 to 150
W/ oC
°C
300
°C
0.4
TL
Symbol
RθJA
RθCS
AOT11N70
65
AOTF11N70
65
Units
°C/W
0.5
0.46
-2.5
°C/W
°C/W
Maximum Case-to-sink A
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev 0: March 2010
50.0
2.1
www.aosmd.com
Page 1 of 6
AOT11N70/AOTF11N70
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
700
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
800
V
ID=250µA, VGS=0V
0.8
V/ oC
VDS=700V, VGS=0V
1
VDS=560V, TJ=125°C
10
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5.5A
gFS
Forward Transconductance
VDS=40V, ID=5.5A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
ISM
3.8
4.5
nΑ
V
0.72
0.87
Ω
1
V
Maximum Body-Diode Continuous Current
11
A
Maximum Body-Diode Pulsed Current
43
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
±100
µA
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
Gate Source Charge
Qgd
Gate Drain Charge
17
S
0.72
1430
1793
2150
pF
116
146
190
pF
8.4
10.5
15
pF
VGS=0V, VDS=0V, f=1MHz
1.8
3.6
5.4
Ω
30
37.5
45
nC
VGS=10V, VDS=560V, ID=11A
7.8
10
12
nC
12
15
22
nC
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
3
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=11A,dI/dt=100A/µs,VDS=100V
320
400
480
Qrr
Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V
7.2
9
11
VGS=10V, VDS=350V, ID=11A,
RG=25Ω
42
ns
74
ns
103
ns
62
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using
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