MRW53601
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRW53601 is Designed for Classs "A" and "AB" Amplifier Applications Up to 2.0 GHz.
PACKAGE STYLE HLP-1
Dim: A B C D E F H J K N Q U Millimeters Min Max 0.790 0.810 0.240 0.260 0.144 0.170 0.115 0.125 0.055 0.065 0.045 0.055 0.115 0.135 0.003 0.006 0.225 0.275 0.220 0.240 0.125 0.135 0.552 0.572 Inches Min 20.07 6.10 3.66 2.93 1.40 1.15 2.93 0.08 5.72 5.59 3.18 14.03 Max 20.57 6.60 4.31 3.17 1.65 1.39 3.42 0.15 6.98 6.09 3.42 14.52
MAXIMUM RATINGS
I V TJ TSTG θJC
O O
250 mA 22 V -65 C to +200 C -65 C to +200 C 40 C/W
O O O
1 = Base 2 = Collector 3 = Emitter
NONE
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVCBO ICBO BVEBO hFE ft Cob GPE LG IC = 10 mA IC = 10 mA
TC = 25 C
O
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
22 50 45 250 3.5
UNITS
V V V µA V --GHz
IC = 1.0 mA VCB = 28 V IE = 250 µA VCE = 5.0 V VCE = 20 V VCB = 28 V VCE = 20 V f = 2.0 GHz ICQ = 120 mA IC = 100 mA IE = 120 mA f = 1.0 MHz Pout = 0.5 W
20 3.0
120
3.5 10 -0.2/+1.0
pF dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
很抱歉,暂时无法提供与“MRW53601”相匹配的价格&库存,您可以联系我们找货
免费人工找货