AZ494BP

Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS General Description The AZ494B/D is a voltage mode pulse width modulation switching regulator control circuit designed primarily for power supply control. The AZ494B/D consists of a reference voltage circuit, two error amplifiers, an on-chip adjustable oscillator, a dead-time control (DTC) comparator, a pulse-steering control flip-flop, and an output control circuit. The AZ494B/D is capable for push-pull or single-ended output operation, which can be selected through the output control. AZ494B has 4.95V and AZ494D has 5V reference voltage respectively. The precision of voltage reference (VREF) is improved up to ± 1.5% through trimming and this provides a better output voltage regulation. The AZ494B/D is available in standard packages of DIP-16 and SOIC-16. AZ494B/D Features · · · · · · Stable 4.95V for AZ494B or 5V for AZ494D Reference Voltage Trimmed to ±1.5% Accuracy Uncommitted Output TR for 200mA Sink or Source Current Single-End or Push-Pull Operation Selected by Output Control Internal Circuitry Prohibits Double Pulse at Either Output Complete PWM Control Circuit with Variable Duty Cycle On-Chip Oscillator with Master or Slave Operation Applications · · · SMPS Back Light Inverter Charger SOIC-16 DIP-16 Figure 1. Package Types of AZ494B/D Jun. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 1 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Pin Configuration M / P Package (SOIC-16 / DIP-16) 1IN + 1IN FEEDBACK DTC CT RT GND C1 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 2IN + 2IN REF OUTPUT CTRL VCC C2 E2 E1 AZ494B/D Figure 2. Pin Configuration of AZ494B/D (Top View) Output Function Control Table Signal for Output Control VI = GND VI = VREF Output Function Single-ended or parallel output Normal push-pull operation Functional Block Diagram OUTPUT CTRL RT CT 6 5 13 Oscillator Dead-Time Control Comparator DTC 4 0.12V Error Amplifier 1 1IN + 1IN 1 2 12 Error Amplifier 2 2IN + 2IN 16 15 0.7mA 3 + Reference Regulator 14 7 VCC REF GND + + PWM Comparator D + CK Q2 10 E2 11 Pulse-Steering Flip-Flop Q1 9 E1 C2 8 C1 FEEDBACK Figure 3. Functional Block Diagram of AZ494B/D Jun. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 2 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Ordering Information AZ494B/D AZ494 E1: Lead Free Circuit Type Blank: Tin Lead TR: Tape and Reel Blank: Tube Reference Voltage B: 4.95V D: 5.0V Package M: SOIC-16 P: DIP-16 Package Temperature Range Part Number Tin Lead AZ494BM Lead Free AZ494BM-E1 AZ494BMTR-E1 AZ494DM-E1 AZ494DMTR-E1 AZ494BP-E1 AZ494DP-E1 Marking ID Tin Lead AZ494BM AZ494BM AZ494DM AZ494DM AZ494BP AZ494DP Lead Free AZ494BM-E1 AZ494BM-E1 AZ494DM-E1 AZ494DM-E1 AZ494BP-E1 AZ494DP-E1 Packing Type Tube Tape & Reel Tube Tape & Reel Tube Tube SOIC-16 -40 to 85oC AZ494BMTR AZ494DM AZ494DMTR AZ494BP AZ494DP DIP-16 BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Jun. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 3 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Absolute Maximum Ratings (Note 1) Parameter Supply Voltage (Note 2) Amplifier Input Voltage Collector Output Voltage Collector Output Current Package Thermal Impedance (Note 3) Lead Temperature 1.6mm from case for 10 seconds Storage Temperature Range ESD rating (Machine Model) TSTG Symbol VCC VI VO IO θJA M Package P Package 260 -65 to 150 200 Value 40 -0.3 to VCC + 0.3 40 250 73 67 oC oC AZ494B/D Unit V V V mA oC/W V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings"for extended periods may affect device reliability. Note 2: All voltage values are with respect to the network ground terminal. Note 3: Maximum power dissipation is a function of TJ(max), θJA and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = ( TJ(max) - TA ) / θJA. Operating at the absolute maximum TJ of 150oC can affect reliability. Recommended Operating Conditions Parameter Supply Voltage Amplifier Input Voltage Collector Output Voltage Collector Output Current (Each Transistor) Current Into Feedback Terminal Oscillator Frequency Timing Capacitor Timing Resistor Operating Free-Air Temperature Reference Output Current fosc CT RT TA IREF 0.47 1.8 -40 Symbol VCC VI VO Min 7 -0.3 Max 36 VCC - 2 36 200 0.3 300 10000 500 85 10 Unit V V V mA mA KHz nF KΩ oC mA Jun. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 4 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Electrical Characteristics TA = 25oC, VCC=15V, f=10KHz unless otherwise noted. Parameter Reference Section for AZ494B Output Reference Voltage Line Regulation Load Regulation Short-Circuit Output Current(Note 5) for AZ494D VREF VREF RLINE RLOAD ISC IREF=1mA IREF=1mA VCC = 7V to 36V IREF=1mA to 10mA VREF = 0V 4.875 4.925 4.95 5.0 2 1 25 5.025 5.075 25 15 V V mV mV mA Symbol Conditions (Note 4) Min Typ Max Unit AZ494B/D Oscillator Section, CT = 0.01µF, RT = 12KΩ (See Figure 4) Frequency Standard Deviation of Frequency (Note 6) Frequency Change with Voltage Frequency Change with Temperature (Note 7) Error-Amplifier Section Input Offset Voltage Input Offset Current Input Bias Current Common-Mode Input Voltage Range Large-Signal Gain Open-Loop Voltage VIO IIO IBIAS VCM AVO GB CMRR ISINK ISOURCE VCC=7V to 36V VID = -15mV to -5V, V(FEEDBACK) = 0.7V VID = 15mV to 5V, V(FEEDBACK) = 3.5V VCE = 36V, VCC=36V VCC = VC = 36V, VE = 0 VE = 0, IC =200mA VO (C1 or C2) = 15V, IE = -200mA 1.1 1.5 65 - 0.3 2 VO (FEEDBACK) = 2.5V VO (FEEDBACK) = 2.5V VO (FEEDBACK) = 2.5V VCC=7V to 36V ∆VO = 3V, RL =2KΩ, VO =0.5V to 3.5V -0.3 70 95 800 80 - 0.7 2 25 0.2 10 250 1 VCC2 mV nA µA V dB KHz dB mA mA fosc All values of VCC, CT, RT and TA constant VCC=7V to 36V, TA = 25oC ∆TA= MIN to MAX 10 100 1 10 KHz Hz/KHz Hz/KHz Hz/KHz Unity-Gain Bandwidth Common-Mode Rejection Ratio Output Sink Current (FEEDBACK) Output Source Current (FEEDBACK) Output Section Collector Off-State Current Emitter Off-State Current Collector-Emitter Saturation Voltage Common Emitter Emitter Follower IC, OFF IE, OFF 2 100 -100 1.3 2.5 µA µA V Jun. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 5 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Electrical Characteristics (Continued) Parameter Output Control Input Current Dead-Time Control Section Input Bias Current Maximum Duty Cycle, Each Output Input Threshold Voltage PWM Comparator Section (See Figure 4) Input Threshold Voltage (FEEDBACK) Input Sink Current (FEEDBACK) Total Device Standby Supply Current ISTDBY VRT=VREF, All VCC = 15V other inputs and V = 36V CC outputs open VI (DEAD-TIME-CTRL) =2V See Figure 4. tr tf tr tf Common-emitter Configuration See Figure 6 Emitter-follower Configuration See Figure 7 6 9 7.5 10 15 mA mA Zero duty cycle V(FEEDBACK) = 0.7V -0.3 4 -0.7 4.5 V mA VI = 0 to 5.25V VI (DEAD-TIME CTRL) = 0, CT =0.01µF, RT =12KΩ Zero Duty Cycle Maximum Duty Cycle 0 -2 45 3 3.3 -10 µA % V Symbol Conditions (Note 4) VI = VREF Min Typ Max 3.5 Unit mA AZ494B/D Average Supply Current Switching Characteristics Rise Time Fall Time Rise Time Fall Time 100 25 100 40 200 100 200 100 ns ns ns ns Note 4: For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions. Note 5: Duration of the short circuit should not exceed one second. Note 6: Standard deviation is a measure of the statistical distribution about the mean as derived from the formula: Note 7: Temperature coefficient of timing capacitor and timing resistor are not taken into account. Jun. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 6 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Parametr Measurement information VCC = 15V 12 4 Test Inputs 3 12KΩ 6 5 0.01µF 1 1IN+ 2 16 15 13 50KΩ 1IN2IN+ 2INOUTPUT CTRL GND 7 REF 14 VCC DTC FEEDBACK RT CT C1 E1 C2 E2 8 9 11 Output 2 10 150Ω 4W 150Ω 4W Output 1 AZ494B/D Test Circuit Voltage at C1 VCC 0V VCC 0V Voltage at C2 Voltage at CT Threshold Voltage DTC 0V Threshold Voltage FEEDBACK 0.7V Duty Cycle 0% MAX 0% Voltage Waveforms Figure 4. Operational Test Circuit and Waveforms Jun. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 7 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Parametr Measurement information (Continued) + VI Amplifier Under Test FEEDBACK AZ494B/D + Vref Other Amplifier Figure 5. Error Amplifier Characteristics 15V 68Ω 4W Each Output Circuit Output CL = 15pF (See Note A) 90% tf tr 90% 10% 10% Note A: CL includes probe and jig capacitance. Figure 6. Common-Emitter Configuration 15V Each Output Circuit 90% 90% Output CL = 15pF (See Note A) 68Ω 4W 10% tr 10% tf Note A: CL includes probe and jig capacitance. Figure 7. Emitter-Follower Configuration Jun. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 8 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Typical Performance Characteristics AZ494B/D 100k 0.001µF Oscillator Frequency (Hz) 10k VCC=15V TA=25 C o 0.01µF 1k 0.1µF 100 CT=1µF 10 1k 10k 100k 1M Timing Resistance (Ω) Figure 8. Oscillator Frequency vs. RT and CT 100 90 80 VCC=15V ∆VO=3V TA=25 C o Voltage Gain (dB) 70 60 50 40 30 20 10 0 1 10 100 1k 10k 100k 1M Frequency(Hz) Figure 9. Error Amplifier Small-Signal Voltage Gain vs. Frequency Jun. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 9 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Mechanical Dimensions SOIC-16 Unit: mm(inch) AZ494B/D 1.300(0.051) 1.000(0.039) 1.650(0.065) 7° 0.700(0.028) 7° 0.406(0.016) A 20:1 0.500(0.020) 0.600(0.024) 10.000(0.394) φ 2.000(0.079) Depth 0.060(0.002) 0.100(0.004) B 0.250(0.010) 1° 5° R0.200(0.008) R0.200(0.008) 1.270(0.050) 6.040(0.238) 0.203(0.008) 0.150(0.006) 0.250(0.010) 0.250(0.010) 0.200(0.008)MIN C-C 50:1 3.940(0.155) 9.5 ° 8° B 20:1 C 0.200(0.008) S φ1.000(0.039) Depth 0.200(0.008) C 1.000(0.039) 3° 7° 8° 8° A 0.400(0.016)×45° Jun. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 10 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Mechanical Dimensions (Continued) DIP-16 Unit: mm(inch) AZ494B/D 7.620(0.300)TYP 6° 4° 4° 3.710(0.146) 4.310(0.170) 1.524(0.060)TYP 6° 5° 0.700(0.028) 3.200(0.126) 3.600(0.142) Φ3.000(0.118) Depth 0.050(0.002) 0.150(0.006) 0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370) 0.254(0.010) 0.360(0.014) 0.560(0.022) 2.540(0.100) 0.510(0.020)MIN TYP 3.000(0.118) 3.600(0.142) 6.200(0.244) 6.600(0.260) 18.800(0.740) 19.200(0.756) R0.750(0.030) Jun. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 11 http://www.bcdsemi.com BCD Semiconductor Corporation 3170 De La Cruz Blvd, Suite # 105 Santa Clara, CA 95054-2411, U.S.A Tel: +1-408-988 6388, Fax: +1-408-988 6386 Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. 800 Yi Shan Road, Shanghai 200233, PRC Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 Advanced Analog Circuits (Shanghai) Corporation 8F, B Zone, 900 Yi Shan Road, Shanghai 200233, PRC Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor (Taiwan) Company Limited 4F, 298-1 Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656-2808, Fax: +886-2-2656-2806 IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others.