AZ494CP-E1

Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS General Description The AZ494A/C is a voltage mode pulse width modulation switching regulator control circuit designed primarily for power supply control. The AZ494A/C consists of a reference voltage circuit, two error amplifiers, an on-chip adjustable oscillator, a dead-time control (DTC) comparator, a pulse-steering control flip-flop, and an output control circuit. The precision of voltage reference (VREF) is improved up to ± 1% through trimming and this provides a better output voltage regulation. The AZ494A/C provides for pushpull or single-ended output operation, which can be selected through the output control. The difference between AZ494A and AZ494C is that they have 4.95V and 5V reference voltage respectively. The AZ494A/C is available in standard packages of DIP-16 and SOIC-16. AZ494A/C Features · · · · · · Stable 4.95V/5V Reference Voltage Trimmed to ±1.0% Accuracy Uncommitted Output TR for 200mA Sink or Source Current Single-End or Push-Pull Operation Selected by Output Control Internal Circuitry Prohibits Double Pulse at Either Output Complete PWM Control Circuit with Variable Duty Cycle On-Chip Oscillator With Master or Slave Operation Applications · · · SMPS Back Light Inverter Charger SOIC-16 DIP-16 Figure 1. Package Types of AZ494A/C Apr. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 1 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Pin Configuration M/P Package (SOIC-16/DIP-16) 1IN + 1IN FEEDBACK DTC CT RT GND C1 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 2IN + 2IN REF OUTPUT CTRL VCC C2 E2 E1 AZ494A/C Figure 2. Pin Configuration of AZ494A/C (Top View) Output Function Control Table Signal for Output Control VI = GND VI = VREF Output Function Single-ended or parallel output Normal push-pull operation Functional Block Diagram OUTPUT CTRL RT CT 6 5 13 Oscillator Dead-Time Control Comparator DTC 4 0.12V Error Amplifier 1 1IN + 1IN 1 2 12 Error Amplifier 2 2IN + 2IN 16 15 0.7mA 3 + Reference Regulator 14 7 VCC REF GND + + PWM Comparator D + CK Q2 10 E2 11 Pulse-Steering Flip-Flop Q1 9 E1 C2 8 C1 FEEDBACK Figure 3. Functional Block Diagram of AZ494A/C Apr. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 2 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Ordering Information AZ494A/C AZ494 E1: Lead Free Circuit Type Blank: Tin Lead TR: Tape and Reel Blank: Tube Reference Voltage A: 4.95V C: 5.0V Package M: SOIC-16 P: DIP-16 Package Temperature Range Part Number Tin Lead AZ494AM Lead Free AZ494AM-E1 AZ494AMTR-E1 AZ494CM-E1 AZ494CMTR-E1 AZ494AP-E1 AZ494CP-E1 Marking ID Tin Lead AZ494AM AZ494AM AZ494CM AZ494CM AZ494AP AZ494CP Lead Free AZ494AM-E1 AZ494AM-E1 AZ494CM-E1 AZ494CM-E1 AZ494AP-E1 AZ494CP-E1 Packing Type Tube Tape & Reel Tube Tape & Reel Tube Tube SOIC-16 -40 to 85oC AZ494AMTR AZ494CM AZ494CMTR AZ494AP AZ494CP DIP-16 BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Apr. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 3 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Absolute Maximum Ratings (Note 1) Parameter Supply Voltage (Note 2) Amplifier Input Voltage Collector Output Voltage Collector Output Current Package Thermal Impedance (Note 3) Lead Temperature 1.6mm from case for 10 seconds Storage Temperature Range ESD rating (Machine Model) TSTG Symbol VCC VI VO IO RθJA M Package P Package 260 -65 to 150 200 Value 40 -0.3 to VCC + 0.3 40 250 73 67 oC oC AZ494A/C Unit V V V mA oC/W V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings"for extended periods may affect device reliability. Note 2: All voltage values are with respect to the network ground terminal. Note 3: Maximum power dissipation is a function of TJ(max), RθJA and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = ( TJ(max) - TA )/RθJA. Operating at the absolute maximum TJ of 150oC can affect reliability. Recommended Operating Conditions Parameter Supply Voltage Collector Output Voltage Collector Output Current (Each Transistor) Amplifier Input Voltage Current Into Feedback Terminal Reference Output Current Timing Capacitor Timing Resistor Oscillator Frequency PWM Input Voltage (Pin 3, 4, 14) Operating Free-Air Temperature TA Symbol VCC VC1, VC2 IC1, IC2 VI IFB IREF CT RT fosc 0.00047 1.8 1.0 0.3 -40 0.001 30 40 0.3 Min 7 Typ 15 30 Max 36 36 200 VCC - 2 0.3 10 10 500 200 5.3 85 Unit V V mA V mA mA µF KΩ KHz V oC Apr. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 4 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Electrical Characteristics TA = 25oC, VCC=20V, f=10KHz unless otherwise noted. Parameter Reference Section Output Reference Voltage for AZ494A Output Reference Voltage for AZ494C Line Regulation Load Regulation Short-Circuit Output Current Oscillator Section CT=0.001µF, RT=30KΩ, Oscillator Frequency fOSC CT=0.01µF, RT=12KΩ CT=0.01µF, RT=12KΩ, TA= -40 to 85oC Frequency Change with Temperature ∆f /∆T CT=0.01µF, RT=12KΩ, TA= -40 to 85 C Dead-Time Control Section Input Bias Current Maximum Duty Cycle, Input Threshold Voltage Error-Amplifier Section Input Offset Voltage Input Offset Current Input Bias Current Common-Mode Input Voltage Range Open-Loop Voltage Gain Unity-Gain Bandwidth Common-Mode Rejection Ratio Output Sink Current (Feedback) Output Source Current (Feedback) VIO IIO IBIAS VCM GVO BW CMRR ISINK ISOURCE VID = -15mV to -5V, V3 = 0.7V VID=15mV to 5V V3 = 3.5V 65 -0.3 2 V3 = 2.5V V3 = 2.5V V3 = 2.5V VCC=7V to 36V VO =0.5V to 3.5V -0.3 70 95 650 80 -0.7 2 25 0.2 10 250 1 VCC-2 mV nA µA V dB KHz dB mA mA IBIAS D(MAX) VITH VCC=15V, V4= 0 to 5.25V VCC=15V, V4= 0V, Pin 13= VREF Zero Duty Cycle Maximum Duty Cycle 0 45 3 3.3 -2 -10 µA % V o AZ494A/C Symbol VREF Conditions IREF=1mA IREF=1mA, TA= -40 to 85oC Min 4.90 4.85 4.95 4.9 Typ 4.95 4.95 5.0 5.0 2 1 Max 5.0 5.05 5.05 5.1 25 15 50 Unit V V V V mV mV mA VREF IREF=1mA IREF=1mA, TA= -40 to 85oC RLINE RLOAD ISC VCC = 7V to 36V IREF=1mA to 10mA VREF = 0V 10 35 40 9.2 9.0 10 10.8 12 KHz 1 % Apr. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 5 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Electrical Characteristics (Continued) Parameter PWM Comparator Section Input Threshold Voltage Input Sink Current Output Section Common Emitter Output Saturation Voltage Emitter Follower VCE (SAT) VCC (SAT) IC (OFF) IE(OFF) ICC tR tF VE = 0V, IC =200mA VCC = 15V, IE = -200mA VCE = 36V, VCC=36V VCC = VC = 36V, VE = 0 Pin 6 = VREF, VCC=15V Common Emitter Common Collector Common Emitter Common Collector 6 1.1 1.5 2 1.3 2.5 100 -100 V VITH ISINK Zero duty cycle V3 = 0.7V -0.3 4 -0.7 4.5 V mA Symbol Conditions Min Typ Max Unit AZ494A/C Collector Off-State Current Emitter Off-State Current Total Device Supply Current Output Switching Characteristics Rise Time Fall Time µA µA 10 mA 100 25 200 100 ns ns Apr. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 6 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Parametr Measurement information VCC = 20V 12 4 Test Inputs 3 12KΩ 6 5 0.01uF 1 1IN+ 2 16 15 13 50KΩ 1IN2IN+ 2INOUTPUT CTRL GND 7 REF 14 VCC DTC FEEDBACK RT CT C1 E1 C2 E2 8 9 11 Output 2 10 150Ω 4W 150Ω 4W Output 1 AZ494A/C Test Circuit Voltage at C1 VCC 0V VCC 0V Voltage at C2 Voltage at CT Threshold Voltage DTC 0V Threshold Voltage FEEDBACK 0.7V Duty Cycle 0% MAX 0% Voltage Waveforms Figure 4. Operational Test Circuit and Waveforms Apr. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 7 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Parametr Measurement information (Continued) + VI Amplifier Under Test FEEDBACK AZ494A/C + Vref Other Amplifier Figure 5. Error Amplifier Characteristics 20V 68Ω 4W Each Output Circuit Output CL = 15pF (See Note A) 90% tf tr 90% 10% 10% Note A: CL includes probe and jig capacitance. Figure 6. Common-Emitter Configuration 20V Each Output Circuit 90% 90% Output CL = 15pF (See Note A) 68Ω 4W 10% tr 10% tf Note A: CL includes probe and jig capacitance. Figure 7. Emitter-Follower Configuration Apr. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 8 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Typical Performance Characteristics AZ494A/C 100k VCC=20V TA=25 C O f - Oscillator Frequency (Hz) 0.001µF 10k 0.01µF 0.1µF 1k 1k 10k 100k 1M RT - Timing Resistance (Ω) Figure 8. Oscillator Frequency vs. RT and CT 100 90 80 VCC=20V ∆VO=3V TA=25 C o Voltage Gain (dB) 70 60 50 40 30 20 10 0 1 10 100 1k 10k 100k 1M Frequency (Hz) Figure 9. Error Amplifier Small-Signal Voltage Gain vs. Frequency Apr. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 9 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Typical Applications (VI=10V to 40V) KSA1010 1mH 2A (VO=5V, IO=1A) AZ494A/C VI(+) 47 150 0.1µ 1M 5.1k VO 12 VCC 11 C2 8 C1 3 FEED BACK 2 1INREF 2IN15 1 16 14 + 5.1k 5.1k 50µ 10V + 50µ 50V AZ494A 1IN+ 2IN+ DTC GND 4 7 E1 9 OUTPUT CONTROL 13 E2 10 RT 6 47k CT 5 + 150 50µ + 10V 0.001µ GND 0.1 VI(-) Figure 10. Pulse Width Modulated Step-Down Converter Apr. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 10 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Mechanical Dimensions SOIC-16 Unit: mm(inch) AZ494A/C 1.300(0.051) 1.000(0.039) 1.650(0.065) 7° 0.700(0.028) 7° 0.406(0.016) A 20:1 0.500(0.020) 0.600(0.024) 10.000(0.394) φ 2.000(0.079) Depth 0.060(0.002) 0.100(0.004) B 0.250(0.010) 1° 5° R0.200(0.008) R0.200(0.008) 1.270(0.050) 6.040(0.238) 0.203(0.008) 0.150(0.006) 0.250(0.010) 0.250(0.010) 0.200(0.008)MIN C-C 50:1 3.940(0.155) 9.5 ° 8° B 20:1 C 0.200(0.008) S φ1.000(0.039) Depth 0.200(0.008) C 1.000(0.039) 3° 7° 8° 8° A 0.400(0.016)×45° Apr. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 11 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Mechanical Dimensions (Continued) DIP-16 Unit: mm(inch) AZ494A/C 7.620(0.300)TYP 6° 4° 4° 3.710(0.146) 4.310(0.170) 1.524(0.060)TYP 6° 5° 0.700(0.028) 3.200(0.126) 3.600(0.142) Φ3.000(0.118) Depth 0.050(0.002) 0.150(0.006) 0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370) 0.254(0.010) 0.360(0.014) 0.560(0.022) 2.540(0.100) 0.510(0.020)MIN TYP 3.000(0.118) 3.600(0.142) 6.200(0.244) 6.600(0.260) 18.800(0.740) 19.200(0.756) R0.750(0.030) Apr. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 12 http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. 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