PAM8304AYR

PAM8304 3W MONO CLASS D AUDIO AMPLIFIER Description Pin Assignments The DIODES™ PAM8304 is a mono, filter-less, Class-D amplifier with high SNR and differential input that helps eliminate noise. The PAM8304 supports 2.8V to 6V operation, which makes it ideal for up to 4-cell alkaline battery applications. The PAM8304 is capable of driving speaker loads as low as 3Ω with a 5V supply, maximizing the output power. U-DFN3030-8 (Type E) DFN3X3-8L Top View Top View OUT+ 1 VDD 3 The device’s over 90% efficiency and small PCB area make the PAM8304 Class-D amplifier ideal for portable applications. The output uses a filter-less architecture, minimizing the number of external components in the PCB area whilst providing a high-performance, simple, and lower cost system. IN- 4 OUT- 7 GND 6 SD 5 IN+ MSOP-8 MSOP-8L Top TopView View OUT+ 1 8 OUT- P8 304 XXXYW The PAM8304 features short circuit protection, thermal shutdown, and undervoltage lock-out. PVDD 2 VDD 3 The PAM8304 is available in the U-DFN3030-8 (Type E) and MSOP-8 packages. IN- 4 Features Applications                    P8304 XXXYW PVDD 2 8 Supply Voltage from 2.8V to 6.0V 3Ω Driving Capability 3.0W@10% THD Output with a 4Ω Load and 5V Supply High Efficiency up to 90% @1W with an 8Ω Load Shutdown Current < 1μA Superior Low Noise without Input Short Circuit Protection Thermal Shutdown Available in Space-Saving U-DFN3030-8 (Type E) and MSOP-8 Packages Pb-Free Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ 7 GND 6 SD 5 IN+ MP4/MP3 GPS Set-top-boxes Tablets/digital photo frames Electronic dictionaries Portable game machines Typical Applications Circuit V DD 1μ F P V DD V DD 0 .1 μ F VIN IN+ OU T + 0 .1 μ F IN- /SD PA M 8 3 0 4 /SD OU T - P GN D PAM8304 Document number: DS36611 Rev. 4 - 2 GN D 1 of 11 www.diodes.com July 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. PAM8304 Pin Descriptions Pin Name OUT+ PVDD VDD ININ+ /SD GND OUTExposed Pad MSOP-8/ U-DFN3030-8 (Type E) 1 2 3 4 5 6 7 8 — Function Positive BTL Output Power Supply Analog Power Supply Negative Differential Input Positive Differential Input Shutdown Terminal, Active Low Ground Negative BTL Output NC Functional Block Diagram VDD IN+ PWM Modulator - IN- SD + SD Bias and Vref OSC PVDD Gate Driv e OUT+ Gate Driv e OUT- UVLO SC Protec t Startup Protec tion OTP GND Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Parameter Supply Voltage (VDD) Input Voltage (IN+, IN-, /SD) Rating Unit 6.5 V -0.3 to VDD + 0.3 V -65 to +150 °C +150 °C Storage Temperature Maximum Junction Temperature Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) Symbol Min Max Unit Supply Voltage 2.8 6.0 V TA Operating Ambient Temperature Range -40 +85 °C TJ Junction Temperature Range -40 +125 °C VDD Parameter PAM8304 Document number: DS36611 Rev. 4 - 2 2 of 11 www.diodes.com July 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. PAM8304 Electrical Characteristics (@TA = +25°C, VDD = 5V, Gain = 18dB, RL = L(33μH) + R + L(33μH), unless otherwise noted.) Symbol VDD Parameter Supply Voltage Test Conditions THD+N = 10%, f = 1kHz, R = 4Ω THD+N = 1%, f = 1kHz, R = 4Ω PO Min Typ Max Unit 2.8 — 6.0 V VDD = 5.0V — 3.0 — VDD = 3.6V — 1.5 — VDD = 3.2V — 1.2 — VDD = 5.0V — 2.4 — VDD = 3.6V — 1.25 — VDD = 3.2V — 1.0 — VDD = 5.0V — 1.75 — VDD = 3.6V — 0.90 — VDD = 3.2V — 0.70 — VDD = 5.0V — 1.40 — VDD = 3.6V — 0.72 — VDD = 3.2V — 0.60 — — 0.17 — — Output Power THD+N = 10%, f = 1kHz, R = 8Ω THD+N = 1%, f = 1kHz, R = 8Ω VDD = 5.0V, PO = 1W, R = 8Ω THD+N VN W 0.16 — — 0.14 — VDD = 5.0V, PO = 0.5W, R = 4Ω — 0.14 — — 0.16 — — 0.17 — -68 -70 -67 — — — dB f = 1kHz f = 1kHz VDD = 3.2V, PO = 0.1W, R = 4Ω Dyn W — VDD = 3.6V, PO = 0.2W, R = 4Ω PSRR W VDD = 3.2V, PO = 0.1W, R = 8Ω VDD = 3.6V, PO = 0.1W, R = 8Ω Total Harmonic Distortion Plus Noise W % % Power Supply Ripple Rejection VDD = 3.6V, Inputs ac-grounded with C = 1μF f = 217Hz f = 1kHz f = 10kHz — — — Dynamic Range VDD = 5V, THD = 1%, R = 8Ω f = 1kHz — 95 — dB Inputs ac-grounded No A-weighting A-weighting — — 170 130 — — μV — 93 — — 86 — Output Noise RL = 8Ω, THD = 10% η Efficiency IQ Quiescent Current VDD = 5V No Load — 5 — ISD Shutdown Current VDD = 2.8V to 5V /SD=0V — — 1 μA RDS(ON) Static Drain-to Source On-State Resistor High-Side PMOS, I = 500mA VDD = 5.0V — 325 — mΩ Low-Side NMOS, I = 500mA VDD = 5.0V — 200 — mΩ fSW Switching Frequency VDD = 2.8V to 5V — — 400 — kHz GV Closed-Loop Gain VDD = 2.8V to 5V — — 300K/Rin — V/V VOS Output Offset Voltage Input ac-ground, VDD = 5V — — — 50 mV VIH SD Input High Voltage VDD = 5V — 1.4 — — VIL SD Input Low Voltage VDD = 5V — — — 0.4 PAM8304 Document number: DS36611 Rev. 4 - 2 RL = 4Ω, THD = 10% 3 of 11 www.diodes.com f = 1kHz % mA V July 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. PAM8304 Performance Characteristics (@TA = +25°C, VDD = 5V, Gain = 18dB, RL = L(33μH) + R + L(33μH), unless otherwise noted.) THD+N vs. Output Power (RL = 4Ω) THD+N vs. Output Power (RL = 8Ω) 20 20 10 10 VDD = 5.0V VDD = 5.0V 5 THD+N (%) THD+N (%) 5 2 % 2 VDD = 3.6V % VDD = 3.6V 1 1 0.5 0.5 0.2 0.2 0.1 1m 2m 5m 10m 20m 50m 100m 200m 500m 1 2 0.1 1m 5 2m 5m 10m 20m W 100m 200m 500m 1 2 3 Output Power (W) THD+N vs. Frequency PSRR vs. Frequency 10 5 50m W Output Power (W) +0 T -5 PO = 300mW -10 VDD = 5.0V -15 VDD = 5.0V 2 -20 THD+N (%) -25 0.5 % PSRR (dB) 1 d B VDD = 3.6V 0.2 -30 -35 -40 -45 -50 -55 0.1 -60 -65 0.05 -70 -75 0.02 20 50 100 200 500 1k 2k 5k 10k -80 20 20k 50 100 200 Hz 500 1k 2k 5k 10k 2k 5k 10k 20k Hz Frequency (Hz) Frequency (Hz) Frequency Response Noise Floor +20 +20 +19.5 +10 +19 +18.5 +0 +18 -10 VDD = 5.0V +17.5 -20 +17 d B g A Noise (dB) Gain (dB) +16.5 +16 +15.5 +15 +14.5 -30 d B r -40 A -60 -50 +14 -70 +13.5 -80 +13 +12.5 -90 +12 -100 +11.5 VDD = 5.0V +11 -110 +10.5 +10 20 50 100 200 500 1k 2k 5k 10k 20k Document number: DS36611 Rev. 4 - 2 50 100 200 500 1k 20k Frequency (Hz) Frequency (Hz) PAM8304 -120 20 Hz Hz 4 of 11 www.diodes.com July 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. PAM8304 Performance Characteristics (@TA = +25°C, VDD = 5V, Gain = 18dB, RL = L(33μH) + R + L(33μH), unless otherwise noted.) (continued) Efficiency vs. Output Power (RL = 8Ω) Efficiency (%) Efficiency (%) Efficiency vs. Output Power (RL = 4Ω) Output Power (W) Output Power (W) Quiescent Current vs. Supply Voltage OSC Frequency vs. Supply Voltage Start-up Response PAM8304 Document number: DS36611 Rev. 4 - 2 Shutdown Response 5 of 11 www.diodes.com July 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. PAM8304 Application Information Input Capacitors (Ci) In a typical application, an input capacitor Ci is required to allow the amplifier to bias the input signal to the proper DC level for optimum operation. In this case, Ci and the minimum input impedance Ri form a high-pass filter with the corner frequency determined in the following equation: fC  1  2 RiCi It is important to consider the value of Ci as it directly affects the low frequency performance of the circuit. For example, when Ri is 150kΩ and the specification calls for a flat bass response down to 150Hz. The equation is reconfigured as follow to determine the value of Ci: Ci  1  2 Rifc  When input resistance variation is considered, if Ci is 7nF, one would likely choose a value of 10nF. A further consideration for this capacitor is the leakage path from the input source through the input network (Ci, Ri, and Rf) to the load. This leakage current creates a DC offset voltage at the input to the amplifier and reduces useful headroom, especially in high-gain applications. For this reason, a low-leakage tantalum or ceramic capacitor is recommended. When polarized capacitors are used, the positive side of the capacitor should face the amplifier input in most applications as the DC level is held at VDD/2, which is likely higher than the source DC level. Please note that it is important to confirm the capacitor polarity in the application. Decoupling Capacitor (CS) The PAM8304 is a high-performance CMOS audio amplifier that requires adequate power supply decoupling to ensure the output total harmonic distortion (THD) is as low as possible. Power supply decoupling also prevents oscillations caused by long lead length between the amplifier and the speaker. Optimum decoupling is achieved by using two different types of capacitors that target different types of noise on the power supply leads. Higher frequency transients, spikes, or digital hashes should be filtered with a good low equivalent-series-resistance (ESR) ceramic capacitor with a value of typically 1μF. This capacitor should be placed as close as possible to the VDD pin of the device. Lower frequency noise signals should be filtered with a large ceramic capacitor of 10μF or greater. It is recommended to place this capacitor near the audio power amplifier. How to Reduce EMI Most applications require a ferrite bead filter for EMI elimination, as shown in Figure 1. The ferrite filter reduces EMI around 1MHz and higher. When selecting a ferrite bead, it should be chosen with consideration to high impedance at high frequencies and low impedance at low frequencies. Ferrite Bead OUT+ 200pF Ferrite Bead OUT- 200pF Figure 1 Ferrite Bead Filter to Reduce EMI PAM8304 Document number: DS36611 Rev. 4 - 2 6 of 11 www.diodes.com July 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. PAM8304 Application Information (continued) Shutdown Operation The PAM8304 contains amplifier shutdown circuitry in order to reduce power consumption while not in use. When a logic low or ground is applied to the /SD pin, the PAM8304 will enter a standby mode and supply current drawn will be minimized. Undervoltage Lock-Out (UVLO) The PAM8304 incorporates circuitry designed to detect low supply voltage. When the supply voltage drops to 2.5V or below, the PAM8304 goes into a state of shutdown. The device returns to normal operation only when VDD is higher than 2.8V. Short Circuit Protection (SCP) The PAM8304 has short circuit protection circuitry on the outputs to prevent the device from damage when output-to-output shorts or output-toGND shorts occur. When a short circuit occurs, the device immediately goes into shutdown state. Once the short is removed the device will be reactivated. Overtemperature Protection (OTP) Thermal protection prevents the device from damage. When the internal die temperature exceeds a typical of +150°C, the device will enter a shutdown state and the outputs are disabled. This is not a latched fault, once the thermal fault is cleared and the temperature of the die decreases by 40°C, the device will restart with no external system interaction. Anti-Pop and Anti-Click Circuitry The PAM8304 contains circuitry to minimize turn-on and turn-off transients or “click and pops”, where turn-on refers to either power supply turn-on or device recovery from shutdown mode. When the device is turned on, the amplifiers are internally muted. An internal current source ramps up the internal reference voltage. The device will remain in mute mode until the reference voltage reaches half-supply voltage. As soon as the reference voltage is stable, the device will begin full operation. For the best power-off pop performance, the amplifier should be set in shutdown mode prior to removing the power supply voltage. PAM8304 Document number: DS36611 Rev. 4 - 2 7 of 11 www.diodes.com July 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. PAM8304 Ordering Information PAM8304 X X X Package Type Pin Configuration A: 8 Pin Y: U-DFN3030-8 (Type E) S: MSOP-8 Part Number Package PAM8304AYR PAM8304ASR U-DFN3030-8 (Type E) MSOP-8 Shipping Package R: Tape & Reel Packing Qty. 3,000 2,500 Carrier Tape & Reel Tape & Reel Marking Information U-DFN3030-8 (Type E) P8304 XXXYW MSOP-8 8 Document number: DS36611 Rev. 4 - 2 6 5 P8304: Product Code X : Internal Code Y : Year : 0 to 9 W : Week : A to Z : 1 to 26 week; a to z : 27 to 52 week; z represents 52 and 53 week P8304 XXXYW 1 PAM8304 7 2 3 4 8 of 11 www.diodes.com July 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. PAM8304 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN3030-8 (Type E) A A3 A1 U-DFN3030-8 (Type E) Dim Min Max Typ A 0.57 0.63 0.60 A1 0.00 0.05 0.02 A3 0.15 b 0.20 0.30 0.25 D 2.95 3.05 3.00 D2 2.15 2.35 2.25 E 2.95 3.05 3.00 E2 1.40 1.60 1.50 e 0.65 L 0.30 0.60 0.45 z 0.40 All Dimensions in mm Seating Plane D D2 (Pin #1 ID) E2 L 0 .20 R0 E e z b MSOP-8 2x D aaa C A D 0.25 4x10 ° Ø 0.60mmx0.038DP Gauge Plane E a x Seating Plane C y 4x10 L ° Detail C 1 2x B b ddd bbb C E3 C A-B D H ccc C A A2 Seating Plane e A1 A3 C aaa C D 2x PAM8304 Document number: DS36611 Rev. 4 - 2 c E1 See Detail C 9 of 11 www.diodes.com MSOP-8 Dim Min Max Typ A -1.10 -A1 0.05 0.15 0.10 A2 0.75 0.95 0.86 A3 0.29 0.49 0.39 b 0.22 0.38 0.30 c 0.08 0.23 0.15 D 2.90 3.10 3.00 E 4.70 5.10 4.90 E1 2.90 3.10 3.00 E3 2.85 3.05 2.95 e --0.65 L 0.40 0.80 0.60 a 0° 8° 4° x --0.750 y --0.750 aaa 0.20 bbb 0.25 ccc 0.10 ddd 0.13 All Dimensions in mm July 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. PAM8304 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN3030-8 (Type E) X2 C Dimensions X1 Y2 C X X1 X2 Y Y1 Y2 Y1 Y Value (in mm) 0.650 0.350 2.350 2.300 0.650 1.600 3.300 X MSOP-8 X C Y Dimensions C X Y Y1 Y1 Value (in mm) 0.650 0.450 1.350 5.300 Mechanical Data U-DFN3030-8 (Type E)  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – NiPdAu, Solderable per J-STD-002, Test B1  Weight: 0.018 grams (Approximate) MSOP-8  Moisture Sensitivity: Level 3 per J-STD-020  Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208  Weight: 0.027 grams (Approximate) PAM8304 Document number: DS36611 Rev. 4 - 2 10 of 11 www.diodes.com July 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. PAM8304 IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. 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The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries. © 2022 Diodes Incorporated. All Rights Reserved. www.diodes.com PAM8304 Document number: DS36611 Rev. 4 - 2 11 of 11 www.diodes.com July 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved.