ZDC833ATA

SOT23 SILICON DUAL VARIABLE CAPACITANCE DIODE ZDC833A DIM 2 1 3 Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 ISSUE 2 – JANUARY 1998 FEATURES * VHF to UHF operation * Common Cathode Dual Diode * Monolithic construction ZDC833A PIN CONFIGURATION 1 3 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 APPLICATIONS * Mobile radios and Pagers * Cellular telephones * Voltage controlled Crystal Oscillators D 0.37 0.53 0.0145 0.021 PARTMARKING DETAIL ZDC833A – C2A F 0.085 0.15 0.0033 0.0059 ABSOLUTE MAXIMUM RATINGS.(Each Diode) G NOM 1.9 NOM 0.075 K 0.01 0.10 0.0004 0.004 L 2.10 2.50 0.0825 0.0985 N NOM 0.95 2 1 3 2 PARAMETER SYMBOL Forward Current IF Power Dissipation at T amb=25°C P tot Operating and Storage Temperature Range T j:T stg SOT23 VALUE UNIT 200 mA 330 mW -55 to +150 °C NOM 0.37 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C ). (Each Diode) Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1997 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. PARAMETER SYMBOL MIN. Reverse Breakdown Voltage V BR 25 Reverse Leakage Current IR Temperature Coefficient η Diode Capacitance Cd 29.7 Capacitance Ratio Cd / Cd 5.0 Figure of Merit Q 200 TYP. 0.2 33 MAX. UNIT CONDITIONS. V I R = 10µA 10 nA V R = 20V 400 ppm/°C V R = 3V, f=1MHz 36.3 pF V R = 2V, f=1MHz 6.5 V R = 2V/20V, f=1MHz V R = 3V, f=50MHz ZDC833A Capacitance (pF) 100 10 1 0.1 1 10 100 VR - Reverse Voltage (V) Capacitance v Reverse Voltage Temp. Coefficient (PPM/ °C) TYPICAL CHARACTERISTICS 1200 Tj = 25 to 125°C 800 400 0 0.1 1 10 100 VR - Reverse Voltage (V) Temp. Coefficient v Reverse Voltage