ZTX601ASTOB

ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K 100K IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V* 2K 5K 3K 20K IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V* 100K IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V* Group A 1K 2K 1K 2K 5K 3K 20K Group B 5K 10K 5K 10K 20K 10K 5K 100K 10K 5K 10K 20K 10K 1K 2K 1K 150 250 150 250 Transition Frequency fT Input Capacitance Cibo 60 90 60 Output Capacitance Cobo 10 15 10 Switching Times UNIT CONDITIONS. MIN. TYP. MHz IC=100mA, VCE=10V f=20MHz 90 pF VEB=0.5V, f=1MHz 15 pF VCE=10V, f=1MHz ton 0.75 0.75 µs toff 2.2 2.2 µs IC=0.5A, VCE=10V IB1=IB2=0.5mA Maximum Power Dissipation (W) RS = 50KΩ 1.0 C B PARAMETER SYMBOL ZTX600 ZTX601 UNIT Collector-Base Voltage VCBO 160 180 V Collector-Emitter Voltage VCEO 140 160 V Emitter-Base Voltage VEBO 10 V Peak Pulse Current ICM 4 A IC 1 A 1 5.7 W mW/ °C -55 to +200 °C Continuous Collector Current Power Dissipation PARAMETER 0.6 DC Conditions 0.2 0 10 100 at Tamb=25°C derate above 25°C SYMBOL 200 Voltage Derating Graph The maximum permissible operational temperature can be obtained from this graph using the following equation Power (max ) − Power (act) 0.0057 +25° C Tamb(max)= Maximum operating ambient temperature Power(max) = Maximum power dissipation figure, obtained from the above graph for a given VCE and source resistance (RS) Power(actual)= Actual power dissipation in users circuit 3-207 Ptot Tj:Tstg ZTX600 ZTX601 MAX. MIN. TYP. UNIT CONDITIONS. MAX. Collector-Base V(BR)CBO Breakdown Voltage 160 180 V IC=100µA Collector-Emitter V(BR)CEO Breakdown Voltage 140 160 V IC=10mA* Emitter-Base V(BR)EBO Breakdown Voltage 10 10 V IE=100µA 10 µA µA µA µA VCB=140V VCB=160V VCB=140V,Ta=100°C VCB=160V,Ta=100°C 0.1 µA VEB=8V 10 µA µA VCES=140V VCES=160V Collector Cut-Off Current 0.01 ICBO 0.01 10 VCE - Collector-Emitter Voltage (Volts) T amb (max ) = E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. MIN. TYP. 1 E ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). RS = 5KΩ 0.8 RS = 1MΩ RS = ∞ 0.4 ISSUE 2 – JUNE 94 FEATURES * 160 Volt VCEO * 1 Amp continuous current * Gain of 5K at IC=1 Amp * Ptot= 1 Watt Operating and Storage Temperature Range *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% ZTX600 ZTX601 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS Emitter Cut-Off Current IEBO 0.1 Colllector-Emitter Cut-Off Current ICES 10 Collector-Emitter Saturation Voltage VCE(sat) 0.75 0.85 1.1 1.2 0.75 0.85 1.1 1.2 V V IC=0.5A, IB=5mA* IC=1A, IB=10mA* Base-Emitter Saturation Voltage VBE(sat) 1.7 1.9 1.7 1.9 V IC=1A, IB=10mA* Base-Emitter Turn-On Voltage VBE(on) 1.5 1.7 1.5 1.7 V IC=1A, VCE=5V* 3-206 ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K 100K IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V* 2K 5K 3K 20K IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V* 100K IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V* Group A 1K 2K 1K 2K 5K 3K 20K Group B 5K 10K 5K 10K 20K 10K 5K 100K 10K 5K 10K 20K 10K 1K 2K 1K 150 250 150 250 Transition Frequency fT Input Capacitance Cibo 60 90 60 Output Capacitance Cobo 10 15 10 Switching Times UNIT CONDITIONS. MIN. TYP. MHz IC=100mA, VCE=10V f=20MHz 90 pF VEB=0.5V, f=1MHz 15 pF VCE=10V, f=1MHz ton 0.75 0.75 µs toff 2.2 2.2 µs IC=0.5A, VCE=10V IB1=IB2=0.5mA Maximum Power Dissipation (W) RS = 50KΩ 1.0 C B PARAMETER SYMBOL ZTX600 ZTX601 UNIT Collector-Base Voltage VCBO 160 180 V Collector-Emitter Voltage VCEO 140 160 V Emitter-Base Voltage VEBO 10 V Peak Pulse Current ICM 4 A IC 1 A 1 5.7 W mW/ °C -55 to +200 °C Continuous Collector Current Power Dissipation PARAMETER 0.6 DC Conditions 0.2 0 10 100 at Tamb=25°C derate above 25°C SYMBOL 200 Voltage Derating Graph The maximum permissible operational temperature can be obtained from this graph using the following equation Power (max ) − Power (act) 0.0057 +25° C Tamb(max)= Maximum operating ambient temperature Power(max) = Maximum power dissipation figure, obtained from the above graph for a given VCE and source resistance (RS) Power(actual)= Actual power dissipation in users circuit 3-207 Ptot Tj:Tstg ZTX600 ZTX601 MAX. MIN. TYP. UNIT CONDITIONS. MAX. Collector-Base V(BR)CBO Breakdown Voltage 160 180 V IC=100µA Collector-Emitter V(BR)CEO Breakdown Voltage 140 160 V IC=10mA* Emitter-Base V(BR)EBO Breakdown Voltage 10 10 V IE=100µA 10 µA µA µA µA VCB=140V VCB=160V VCB=140V,Ta=100°C VCB=160V,Ta=100°C 0.1 µA VEB=8V 10 µA µA VCES=140V VCES=160V Collector Cut-Off Current 0.01 ICBO 0.01 10 VCE - Collector-Emitter Voltage (Volts) T amb (max ) = E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. MIN. TYP. 1 E ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). RS = 5KΩ 0.8 RS = 1MΩ RS = ∞ 0.4 ISSUE 2 – JUNE 94 FEATURES * 160 Volt VCEO * 1 Amp continuous current * Gain of 5K at IC=1 Amp * Ptot= 1 Watt Operating and Storage Temperature Range *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% ZTX600 ZTX601 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS Emitter Cut-Off Current IEBO 0.1 Colllector-Emitter Cut-Off Current ICES 10 Collector-Emitter Saturation Voltage VCE(sat) 0.75 0.85 1.1 1.2 0.75 0.85 1.1 1.2 V V IC=0.5A, IB=5mA* IC=1A, IB=10mA* Base-Emitter Saturation Voltage VBE(sat) 1.7 1.9 1.7 1.9 V IC=1A, IB=10mA* Base-Emitter Turn-On Voltage VBE(on) 1.5 1.7 1.5 1.7 V IC=1A, VCE=5V* 3-206 ZTX600 ZTX601 TYPICAL CHARACTERISTICS 20k 1.00 Group B VCE=10V hFE - Gain 0.90 IC/IB=100 0.80 12k 8k 0.70 Group A 4k VBE(sat) - (Volts) 0.60 0 0.01 0.1 1 10 0.001 1 VCE(sat) v IC hFE v IC 1.5 1.6 1.4 1.4 IC/IB=100 1.2 10 VCE=5V 1.3 1.2 1.0 0.01 0.1 1 1.1 10 IC - Collector Current (Amps) ZTX600 ZTX601 10 1 0.1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0.001 10 0.1 VBE(on) v IC Single Pulse Test at Tamb=25°C 1 0.01 100 1 IC - Collector Current (Amps) VBE(sat) v IC IC - Collector Current (Amps) 0.1 IC - Collector Current (Amps) 1.8 0.01 0.01 IC - Collector Current (Amps) VBE - (Volts) VCE(sat) - (Volts) 16k 1000 VCE - Collector Voltage (Volts) Safe Operating Area 3-208 10