0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BLV7002

BLV7002

  • 厂商:

    BELLING(上海贝岭)

  • 封装:

  • 描述:

    BLV7002 - BLV7002 - SHANGHAI BELLING CO., LTD.

  • 数据手册
  • 价格&库存
BLV7002 数据手册
BLV7002 BLV7002 N-channel Enhancement Mode Vertical D-MOS Transistor Chip Description N-channel enhancement mode field-effect transistor Features Very fast switching Logic level compatible Applications Relay driver High speed line driver Logic level translator. Size Chip size: 495µm ×490µm Chip thickness: 220±20µm. structure Planar type Electrodes: Aluminum alloy Backside metal: Au alloy Scribe street width: 50µm Pad size: 90µm x90µm Die per wafer: 25800 ABSOLUTE MAXIMUM RATING Symbol VDS VGS ID IDM Ptot TSTG Tj Parameter Drain – source voltage (DC) Gate – source voltage (DC) Drain current (DC) Peak drain current Total power dissipation Storage temperature Junction temperature Min. -55 - Max. 60 ±20 115 0.46 0.2 +150 150 Unit V V mA A W o C o C http://www.belling.com.cn -1Total 2 Pages 8/18/2006 BLV7002 CHARACTERISTICS Tj = 25oC unless otherwise specified Parameter Symbol Test conditions Min. BVDSS Drain-source breakdown voltage VGS=0V,ID=250µ A 60 IDSS Drain-source leakage current VDS=60V, VGS=0V I GSS Gate-source leakage current VGS=+20V, VDS=0V VGSth Gate-source threshold voltage VDS=2.5V, ID=250uA 1 RDSon Drain-source on-state resistance VGS=10V,ID=100mA Ciss Input capacitance VDS=25V,VGS=0V Coss Output capacitance f =1MHz Crss Reverse transfer capacitance ton Turn-On time VDD=30V, ID=200mA VGS=0-10V toff Turn-Off time - Typ. 73 1 1 1.3 - Max. 500 ±100 2.5 5 50 25 5 30 30 Unit V nA nA V Ω pF pF pF ns ns PATTERN DRAWING http://www.belling.com.cn -2Total 2 Pages 8/18/2006
BLV7002 价格&库存

很抱歉,暂时无法提供与“BLV7002”相匹配的价格&库存,您可以联系我们找货

免费人工找货