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1N5391

1N5391

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    1N5391 - PLASTIC SILICON RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
1N5391 数据手册
BL FEATURES GALAXY ELECTRICAL 1N5391 - - - 1N5399 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.5 A PLASTIC SILICON RECTIFIER Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 DO - 15 MECHANICAL DATA Case:JEDEC DO-15,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces0.39 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. 1N 1N 1N 1N 1N 1N 1N 1N 1N UNITS 5391 5392 5393 5394 5395 5396 5397 5398 5399 Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA=75 VRRM VRMS V DC IF(AV) 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 1.5 500 350 500 600 420 600 800 560 800 1000 700 1000 V V V A Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 IFSM 50.0 A Maximum instantaneous forw ard voltage @ 1.5 A Maximum reverse current at rated DC blocking voltage Typical junction capacitance Typical thermal resistance @TA=25 @TA =100 (Note1) (Note2) VF IR CJ RθJA TJ 1.1 5.0 50.0 20 40 - 55 ---- + 150 - 55 ---- + 150 V A pF /W Operating junction temperature range Storage temperature range TSTG N OTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 2. Thermal resistance f rom junction to ambient. www.galaxycn.com Document Number 0260004 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- TYPICAL FORWARD CHARACTERISTIC INSTANTANEOUS FORWARD CURRENT 1N5391 - - - 1N5399 FIG.2 -- TYPICAL JUNCTION CAPACITANCE 100 10 T J =25 Pulse W idth=300us 100 60 4 2 1.0 CAPACITANCE,pF 40 20 10 f=1MHz TJ=25 AMPERES 0.4 0.2 0.1 0.06 0.04 0.02 0.01 0.6 0.8 1.0 1.2 1.4 1.6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 INSTANTANEOUS FORWARD VOLTAGE,VOLTS REVERSE VOLTAGE,VOLTS FIG.3 -- PEAK FORWARD SURGE CURRENT AVERAGE FORWARD RECTIFIED CURRENT AMPERES FIG.4 -- FORWARD DERATING CURVE 80 1.50 PEAK FORWARD SURGE CURRENT 70 60 50 40 1.25 TJ=125℃ 8.3ms Single Half Sine-Wave 1.00 .75 Single Phase Half Wave 60H Z Resistive or Inductive Load AMPERES 30 20 10 0 1 2 4 8 10 .50 025 20 40 60 80 100 0 25 50 75 100 125 150 175 NUMBER OF CYCLES AT 60Hz AMBIENT TEMPERATURE, www.galaxycn.com Document Number 0260004 BLGALAXY ELECTRICAL 2.
1N5391 价格&库存

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