CSD19506KTT

Sample & Buy Product Folder Support & Community Tools & Software Technical Documents CSD19506KTT SLPS586 – MARCH 2016 CSD19506KTT 80 V N-Channel NexFET™ Power MOSFET 1 Features • • • • • • • 1 Product Summary Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb-Free Terminal Plating RoHS Compliant Halogen Free D2PAK Plastic Package TA = 25°C TYPICAL VALUE Drain-to-Source Voltage 80 V Qg Gate Charge Total (10 V) 120 nC Qgd Gate Charge Gate to Drain 20 RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage nC VGS = 6 V 2.2 mΩ VGS = 10 V 2.0 mΩ 2.5 V Ordering Information(1) 2 Applications • • UNIT VDS Secondary Side Synchronous Rectifier Motor Control DEVICE QTY MEDIA PACKAGE SHIP CSD19506KTT 500 CSD19506KTTT 50 13-Inch Reel D2PAK Plastic Package Tape & Reel 3 Description (1) For all available packages, see the orderable addendum at the end of the data sheet. This 80-V, 2.0-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. TA = 25°C VALUE UNIT SPACE VDS Drain-to-Source Voltage 80 V VGS Gate-to-Source Voltage ±20 V Continuous Drain Current (Package limited) 200 Continuous Drain Current (Silicon limited), TC = 25°C 291 Continuous Drain Current (Silicon limited), TC = 100°C 206 IDM Pulsed Drain Current (1) 400 A PD Power Dissipation 375 W TJ, Tstg Operating Junction and Storage Temperature Range –55 to 175 °C EAS Avalanche Energy, single pulse ID = 129 A, L = 0.1 mH, RG = 25 Ω 832 mJ Drain (Pin 2) Absolute Maximum Ratings ID Gate (Pin 1) Source (Pin 3) . A (1) Max RθJC = 0.4°C/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(on) vs VGS Gate Charge 10 TC = 25° C, I D = 100 A TC = 125° C, I D = 100 A 9 VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance (m:) 10 8 7 6 5 4 3 2 1 ID = 100 A 9 VDS = 40 V 8 7 6 5 4 3 2 1 0 0 0 2 4 6 8 10 12 14 16 VGS - Gate-to-Source Voltage (V) 18 20 D007 0 20 40 60 80 100 Qg - Gate Charge (nC) 120 140 D004 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD19506KTT SLPS586 – MARCH 2016 www.ti.com Table of Contents 1 2 3 4 5 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Specifications......................................................... 6.1 6.2 6.3 6.4 1 1 1 2 3 7 5.1 Electrical Characteristics........................................... 3 5.2 Thermal Information .................................................. 3 5.3 Typical MOSFET Characteristics.............................. 4 6 Community Resources.............................................. Trademarks ............................................................... Electrostatic Discharge Caution ................................ Glossary .................................................................... 7 7 7 7 Mechanical, Packaging, and Orderable Information ............................................................. 8 7.1 KTT Package Dimensions ........................................ 8 7.2 Recommended PCB Pattern..................................... 9 7.3 Recommended Stencil Opening (0.125 mm Stencil Thickness).................................................................. 9 Device and Documentation Support.................... 7 4 Revision History 2 DATE REVISION NOTES March 2016 * Initial release. Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: CSD19506KTT CSD19506KTT www.ti.com SLPS586 – MARCH 2016 5 Specifications 5.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA IDSS Drain-to-source leakage current VGS = 0 V, VDS = 64 V 1 μA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA RDS(on) Drain-to-source on-resistance gfs Transconductance 80 2.1 V 2.5 3.2 V VGS = 6 V, ID = 100 A 2.2 2.8 mΩ VGS = 10 V, ID = 100 A 2.0 2.3 mΩ VDS = 8 V, ID = 100 A 297 S DYNAMIC CHARACTERISTICS Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance RG Series gate resistance Qg Gate charge total (10 V) 120 Qgd Gate charge gate-to-drain Qgs Gate charge gate-to-source Qg(th) Gate charge at Vth Qoss Output charge td(on) Turn on delay time tr Rise time td(off) Turn off delay time tf Fall time VGS = 0 V, VDS = 40 V, ƒ = 1 MHz VDS = 40 V, ID = 100 A VDS = 40 V, VGS = 0 V VDS = 40 V, VGS = 10 V, IDS = 100 A, RG = 0 Ω 9380 12200 pF 2260 2940 pF 42 55 pF 1.3 2.6 Ω 156 nC 20 nC 37 nC 25 nC 345 nC 14 ns 7 ns 30 ns 5 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = 100 A, VGS = 0 V 0.9 1.1 V Qrr Reverse recovery charge nC Reverse recovery time VDS= 40 V, IF = 100 A, di/dt = 300 A/μs 525 trr 107 ns 5.2 Thermal Information (TA = 25°C unless otherwise stated) MAX UNIT RθJC Junction-to-case thermal resistance THERMAL METRIC MIN TYP 0.4 °C/W RθJA Junction-to-ambient thermal resistance 62 °C/W Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: CSD19506KTT 3 CSD19506KTT SLPS586 – MARCH 2016 www.ti.com 5.3 Typical MOSFET Characteristics (TA = 25°C unless otherwise stated) 200 200 175 175 IDS - Drain-to-Source Current (A) IDS - Drain-to-Source Current (A) Figure 1. Transient Thermal Impedance 150 125 100 75 50 VGS = 6 V VGS = 8 V VGS = 10 V 25 TC = 125° C TC = 25° C TC = -55° C 150 125 100 75 50 25 0 0 0 0.1 0.2 0.3 0.4 VDS - Drain-to-Source Voltage (V) 0.5 1 D002 2 3 4 5 VGS - Gate-to-Source Voltage (V) 6 7 D003 VDS = 5 V Figure 2. Saturation Characteristics 4 Submit Documentation Feedback Figure 3. Transfer Characteristics Copyright © 2016, Texas Instruments Incorporated Product Folder Links: CSD19506KTT CSD19506KTT www.ti.com SLPS586 – MARCH 2016 Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) 100000 9 10000 8 C - Capacitance (pF) VGS - Gate-to-Source Voltage (V) 10 7 6 5 4 3 1000 100 10 2 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 1 1 0 0 20 40 60 80 100 Qg - Gate Charge (nC) VDS = 40 V 120 0 140 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) D004 D005 Figure 5. Capacitance 3.1 10 2.9 9 RDS(on) - On-State Resistance (m:) VGS(th) - Threshold Voltage (V) 80 ID = 100 A Figure 4. Gate Charge 2.7 2.5 2.3 2.1 1.9 1.7 1.5 1.3 1.1 -75 70 TC = 25° C, I D = 100 A TC = 125° C, I D = 100 A 8 7 6 5 4 3 2 1 0 -50 -25 0 0 25 50 75 100 125 150 175 200 TC - Case Temperature (° C) D006 2 4 6 8 10 12 14 16 VGS - Gate-to-Source Voltage (V) 18 20 D007 ID = 250 µA Figure 6. Threshold Voltage vs Temperature Figure 7. On-State Resistance vs Gate-To-Source Voltage 100 2.2 VGS = 6 V VGS = 10 V ISD - Source-to-Drain Current (A) Normalized On-State Resistance 2.4 2 1.8 1.6 1.4 1.2 1 0.8 TC = 25° C TC = 125° C 10 1 0.1 0.01 0.001 0.6 0.4 -75 0.0001 -50 -25 0 25 50 75 100 125 150 175 200 TC - Case Temperature (° C) D008 0 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) 1 D009 ID = 60 A Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: CSD19506KTT 5 CSD19506KTT SLPS586 – MARCH 2016 www.ti.com Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) 500 IAV - Peak Avalanche Current (A) IDS - Drain-to-Source Current (A) 1000 100 10 1 DC 10 ms 0.1 0.1 1 ms 100 µs 1 10 VDS - Drain-to-Source Voltage (V) 100 TC = 25qC TC = 125qC 100 10 0.01 0.1 TAV - Time in Avalanche (ms) D010 1 D011 Single Pulse, Max RθJC = 0.4°C/W Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching IDS - Drain-to-Source Current (A) 225 200 175 150 125 100 75 50 25 0 -50 -25 0 25 50 75 100 125 TC - Case Temperature (° C) 150 175 200 D012 Figure 12. Maximum Drain Current vs Temperature 6 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: CSD19506KTT CSD19506KTT www.ti.com SLPS586 – MARCH 2016 6 Device and Documentation Support 6.1 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 6.2 Trademarks NexFET, E2E are trademarks of Texas Instruments. All other trademarks are the property of their respective owners. 6.3 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 6.4 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: CSD19506KTT 7 CSD19506KTT SLPS586 – MARCH 2016 www.ti.com 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 7.1 KTT Package Dimensions 15.5 14.7 9.25 9.05 A B 3 10.26 10.06 2X 5.08 2 1 2[.0]X 1.36 1.23 2[.0]X 0.9 0.77 1.75 MAX 0.25 C A B 1.4 1.17 0.47 0.34 C 4.7 4.4 8 0 0.25 0 1.32 1.22 2.6 2 0.25 GAGE PLANE 7.48 7.08 8° 0° 8.55 8.15 0.25 GAGE PLANE NOTE 3 2.6 2 OPTIONAL LEAD FORM EXPOSED THERMAL PAD Notes: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. Features may not exist and shape may vary per different assembly sites. Pin Configuration POSITION 8 DESIGNATION Pin 1 Gate Pin 2 / Tab Drain Pin 3 Source Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: CSD19506KTT CSD19506KTT www.ti.com SLPS586 – MARCH 2016 7.2 Recommended PCB Pattern PKG (3.4) (6.9) (R0.05) TYP PKG SYMM (5.08) (8.55) 2X (1.05) 2X (3.82) (7.48)   0.07 MAX ALL AROUND SOLDER MASK OPENING 0.07 MIN ALL AROUND METAL SOLDER MASK OPENING METAL UNDER SOLDER MASK SOLDER MASK DEFINED NON SOLDER MASK DEFINED For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through PCB Layout Techniques. 7.3 Recommended Stencil Opening (0.125 mm Stencil Thickness) (1.17) TYP 42X (0.97) (0.48) TYP 2X (3.82) 2X (1.05) 42X (0.95) (R0.05) TYP (1.15) TYP SYMM (5.08) (6.9) PKG Notes:   1. This package is designed to be soldered to a thermal pad on the board. See application notes, PowerPAD  Thermally Enhanced Package (SLMA002) and PowerPAD Made Easy (SLMA004) for more information.   2. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. 3. Board assembly site may have different recommendations for stencil design. Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: CSD19506KTT 9 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) (3) Device Marking (4/5) (6) CSD19506KTT ACTIVE DDPAK/ TO-263 KTT 3 500 RoHS-Exempt & Green SN Level-2-260C-1 YEAR -55 to 175 CSD19506KTT CSD19506KTTT ACTIVE DDPAK/ TO-263 KTT 3 50 RoHS-Exempt & Green SN Level-2-260C-1 YEAR -55 to 175 CSD19506KTT (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of