LM709AW/883

MILITARY DATA SHEET Original Creation Date: 06/20/95 Last Update Date: 12/10/96 Last Major Revision Date: 06/20/95 MNLM709A-X REV 0B0 OPERATIONAL AMPLIFIER General Description The LM709 is a monolithic operational amplifier intended for general-purpose applications. Operation is completely specified over the range of voltages commonly used for these devices. The design, in addition to providing high gain, minimizes both offset voltage and bias currents. Further, the class-B output stage gives a large output capability with minimum power drain. External components are used to frequency compensate the amplifier. Although the unity-gain compensation network specified will make the amplifier unconditionally stable in all feedback configurations, compensation can be tailored to optimize high-frequency performance for any gain setting. Industry Part Number NS Part Numbers LM709A LM709AH/883 LM709AJ/883 LM709AW/883 Prime Die LM709 Processing Subgrp Description MIL-STD-883, Method 5004 1 2 3 4 5 6 7 8A 8B 9 10 11 Quality Conformance Inspection MIL-STD-883, Method 5005 1 Static tests at Static tests at Static tests at Dynamic tests at Dynamic tests at Dynamic tests at Functional tests at Functional tests at Functional tests at Switching tests at Switching tests at Switching tests at Temp ( oC) +25 +125 -55 +25 +125 -55 +25 +125 -55 +25 +125 -55 MILITARY DATA SHEET MNLM709A-X REV 0B0 (Absolute Maximum Ratings) (Note 1) Supply Voltage +18V Power Dissipation 300mW Differential Input Voltage +5V Input Voltage +10V Output Short-Circuit Duration (TA = +25 C) 5 Seconds Storage Temperature Range -65 C to +150 C Lead Temperature (Soldering 10 Sec.) 300 C Note 1: Absolute Maximum Ratings indicate limits which if exceeded may result in damage. Operating Ratings are conditions where the device is expected to be functional but not necessarily within the guaranteed performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. Recommended Operating Conditions Junction Temperature Range (Note 1) -55 C to +150 C Thermal Resistance ThetaJA (H Package) 150 C/W ThetaJC (H Package) Note 1: 45 C/W For operating at elevated temperatures, the device must be derated based on a 150 C maximum junction temperature. For operating at elevated temperature, the device must be derated based on thermal resistance ThetaJA, Tj(MAX) and TA. 2 MILITARY DATA SHEET MNLM709A-X REV 0B0 Electrical Characteristics DC PARAMETERS (The following conditions apply to all the following parameters, unless otherwise specified.) DC: Vcc = +15V, Vcm = 0, Rs = 10K Ohms SYMBOL Vio PARAMETER Input Offset Voltage CONDITIONS NOTES PINNAME MIN Rs = 10K Ohms Iib UNIT SUBGROUPS 2 mV 1 3 mV 2, 3 2 mV 1 3 mV 2, 3 Vcc = +9V 2 mV 1 Vcc = +9V 3 mV 2, 3 50 nA 1, 2 200 nA 3 Vcc = +9V 50 nA 1, 2 Vcc = +9V 200 nA 3 200 nA 1, 2 500 nA 3 Vcc = +9V 200 nA 1, 2 Vcc = +9V 500 nA 3 70 V/mV 1, 2, 3 100 uV/V 1, 2, 3 Rs = 0 Ohms Iio MAX Input Offset Current Input Bias Current Avs Large Voltage Signal Gain Rs=0 Ohms, RL=2K Ohms, -10V= +9V CMRR Common Mode Rejection Ratio -8V