LME49880MRX/NOPB

LME49880 www.ti.com SNAS455C – DECEMBER 2009 – REVISED APRIL 2013 LME49880 Overture® E-Series Dual JFET Input Audio Operational Amplifier Check for Samples: LME49880 FEATURES DESCRIPTION • • The LME49880 is part of the ultra-low distortion, low noise, high slew rate operational amplifier series optimized and fully specified for high performance, high fidelity application. The LME49880 is developed in JFET technology and reducing the flicker noise as well as the noise corner frequency significantly. It combines low voltage noise density (7nV/√Hz) with very low THD+N (0.00003%). The LME49880 has a high slew rate of ±17 V/μs and an output current capability of ±22mA. It drives 600Ω loads to within 1.3V of either power supply voltage. 1 23 Easily Drives 600Ω Loads Output Short Circuit Protection APPLICATIONS • • • • • Ultra High Quality Audio Signal Processing Preamplifier Spectrum Analyzers Ultrasound Preamplifier Active Filters KEY SPECIFICATIONS • • • • • • • • • Input Bias Current 5 pA (Typ) Power Supply Voltage Range ±5V to ±17 V THD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz) – RL = 2kΩ 0.00003 % (Typ) – RL = 600Ω, 0.00003 % (Typ) Slew Rate ±17 V/μs (Typ) Gain Bandwidth Product 25 MHz (Typ) Open Loop Gain (RL = 600Ω) 115 dB (Typ) Input Noise Density 7 nV/√Hz (Typ) Input Offset Voltage 5 mV (Typ) CMRR 110 dB (Typ) The LME49880 has a wide supply range of ±5V to ±17V. Its outstanding GAIN (120dB), and low input bias current (5pA) give the amplifier excellent operational amplifier DC performance. The LME49880 is unity gain stable and capable of driving complex loads with values as high as 100pF. It is available in an 8-lead narrow body SO PowerPAD. TYPICAL APPLICATION VOLTAGE NOISE (nV/ Hz) CURRENT NOISE (fA/ Hz) 1k 100 Current Noise 10 Voltage Noise 1 10 100 1k 10k 100k FREQUENCY (Hz) Figure 1. Current Noise and Voltage Spectral Density Figure 2. THD+N vs Frequency VCC = ±15V, VO = 3VRMS, RL = 600Ω 1 2 3 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Overture is a registered trademark of Texas Instruments. All other trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2009–2013, Texas Instruments Incorporated LME49880 SNAS455C – DECEMBER 2009 – REVISED APRIL 2013 www.ti.com CONNECTION DIAGRAM 1 8 + OUTPUT A V 2 7 INVERTING INPUT A OUTPUT B A NON-INVERTING INPUT A 3 - 4 B + + 6 INVERTING INPUT B 5 NON-INVERTING INPUT B V Figure 3. Connection Diagram See Package Number — DDA0008B These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ABSOLUTE MAXIMUM RATINGS (1) (2) Power Supply Voltage (VS = V+ - V-) 36V −65°C to 150°C Storage Temperature Input Voltage (V-) - 0.3V to (V+) + 0.3V Output Short Circuit (3) Continuous Power Dissipation Internally Limited ESD Rating (4) 2000V ESD Rating (5) 200V ESD Rating (6) 1000V Junction Temperature 150°C Thermal Resistance θJA (SO PowerPAD) Solder Information Infrared or Convection (20 sec) (1) (2) (3) (4) (5) (6) 2 55°C/W 260°C “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. All voltages are measured with respect to the ground pin, unless otherwise specified. If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications. Amplifier output connected to GND, any number of amplifiers within a package. Human body model, applicable std. JESD22-A114C. Machine model, applicable std. JESD22-A115-A. Charge device model, applicable std JESD22-C101-A. Submit Documentation Feedback Copyright © 2009–2013, Texas Instruments Incorporated Product Folder Links: LME49880 LME49880 www.ti.com SNAS455C – DECEMBER 2009 – REVISED APRIL 2013 OPERATING RATINGS TMIN ≤ TA ≤ TMAX Temperature Range –40°C ≤ TA ≤ 85°C ±5V ≤ VS ≤ ±17V Supply Voltage Range ELECTRICAL CHARACTERISTICS (1) The following specifications apply for VS = ±15V, TA = 25°C, unless otherwise specified. Symbol THD+N Parameter Total Harmonic Distortion + Noise Conditions AV = 1, VOUT = 3VRMS RL = 2kΩ RL = 600Ω LME49880 Typical (2) 0.00003 0.00003 Limit (3) Units (Limits) % (max) 0.00009 GBWP Gain Bandwidth Product AV = 1k, RL = 2k 25 19 MHz (min) SR Slew Rate RL = 2k ±17 ±12 V/μs (min) Settling time AV = –1, 10V step, CL = 100pF 0.1% error range 0.8 Equivalent Input Noise Voltage fBW = 20Hz to 20kHz 0.7 1.6 Equivalent Input Noise Density f = 1kHz f = 10Hz 7 16 11 nV/√Hz (max) iN Current Noise Density f = 1kHz VOS Offset Voltage ±10 mV (max) ΔVOS/ΔTemp Average Input Offset Voltage Drift vs Temperature –40°C ≤ TA ≤ 85°C 3 μV/°C PSRR Power Supply Rejection Ratio VCC = ±5V to ±15V 110 dB IB Input Bias Current VCM = 0V 5 150 pA (max) IOS Input Offset Current VCM = 0V 2 100 pA (max) +11.5 –11.5 (V+) –5V (V-) +5V V (min) ts eN μs 6 ±5 μVRMS (max) fA/√Hz VIN-CM Common-Mode Input Voltage Range CMRR > 55dB CMRR Common-Mode Rejection –10V