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SN74LVC1G07-Q1
SCES826B – MARCH 2011 – REVISED OCTOBER 2019
SN74LVC1G07-Q1 Single Buffer/Driver With Open-Drain Output
1 Features
3 Description
•
•
The SN74LVC1G07-Q1 is a single channel opendrain
buffer/driver
qualified
for
automotive
applications. This is designed for 1.65-V to 5.5-V VCC
operation.
1
•
•
•
•
•
•
Qualified for automotive applications
AEC-Q100 Qualified with the following results:
– Device temperature grade 1: –40°C to +125°C
ambient operating temperature
– 2000-V Device human-body model (HBM)
ESD classification level 2
– 1000-V Device charged-device model (CDM)
ESD classification level C5
Supports 5-V VCC operation
Input and open-drain output accept
Voltages up to 5.5 V
Max tpd of 5.7 ns at 3.3 V
Low power consumption, 10-μA max ICC
±24-mA Output drive at 3.3 V
Ioff Supports partial-power-down mode
Operation
2 Applications
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Automotive infotainment
Automotive ADAS camera and fusion
Automotive body control module AV receiver
Automotive HEV/powertrain
Blu-ray player and home theater
DVD recorder and player
Desktop or notebook PC
Digital radio or internet radio player
Digital video camera (DVC)
Embedded PC
GPS: Personal navigation device
Mobile internet device
Network projector front end
Portable media player
Pro Audio Mixer
Smoke detector
Solid state drive (SSD): enterprise
High-definition (HDTV)
Tablet: enterprise
Audio dock: portable
DLP front projection system
DVR and DVS
Digital picture frame (DPF)
Digital still camera
The output of the SN74LVC1G07-Q1 device is open
drain and can be connected to other open-drain
outputs to implement active-low wired-OR or activehigh wired-AND functions. The maximum sink current
is 32 mA.
This device is fully specified for partial-power-down
applications using Ioff.The Ioff circuitry disables the
outputs, preventing damaging current backflow
through the device when it is powered down.
Device Information(1)
PART NUMBER
SN74LVC1G07-Q1
PACKAGE (PINS)
BODY SIZE (NOM)
SOT-23 (5)
2.90 mm × 1.60 mm
SC70 (5)
2.00 mm × 1.25 mm
SON (6)
1.45 mm × 1.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Logic Diagram (Positive Logic)
2
A
4
Y
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
SN74LVC1G07-Q1
SCES826B – MARCH 2011 – REVISED OCTOBER 2019
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
3
3
4
4
5
5
5
5
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Switching Characteristics .........................................
Operating Characteristics..........................................
Typical Characteristics ..............................................
7
Parameter Measurement Information (Open
Drain)....................................................................... 6
8
Detailed Description .............................................. 7
7.1 PMI............................................................................ 6
8.1
8.2
8.3
8.4
9
Overview ...................................................................
Functional Block Diagram .........................................
Feature Description...................................................
Device Functional Modes..........................................
7
7
7
7
Application and Implementation .......................... 8
9.1 Application Information.............................................. 8
9.2 Typical Application .................................................... 8
10 Power Supply Recommendations ....................... 9
11 Layout..................................................................... 9
11.1 Layout Guidelines ................................................... 9
11.2 Layout Example ...................................................... 9
12 Device and Documentation Support ................. 10
12.1
12.2
12.3
12.4
12.5
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
10
10
10
10
10
13 Mechanical, Packaging, and Orderable
Information ........................................................... 10
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (February 2017) to Revision B
Page
•
Added DRY package option to Device Information table ...................................................................................................... 1
•
Added DRY package as Product Preview device option to Pin Configuration and Functions .............................................. 3
•
Added DRY package to Thermal Information table................................................................................................................ 4
Changes from Original (March 2011) to Revision A
Page
•
Added Applications, Device Information table, ESD Ratings table, Typical Characteristics, Feature Description
section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations
section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable
Information section. ............................................................................................................................................................... 1
•
Changed RθJA value for DBV (SOT-23) package from: 206 to: 269.3 ................................................................................... 4
2
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SCES826B – MARCH 2011 – REVISED OCTOBER 2019
5 Pin Configuration and Functions
DBV or DCK Package
5-Pin SOT-23 or SC70
Top View
N.C.
1
A
5
DRY Package
6-Pin SON
Transparent Top View
N.C.
1
6
A
2
5
N.C.
GND
3
4
Y
VCC
VCC
2
N.C. – No internal connection
GND
3
4
See mechanical drawings for dimensions.
Y
Pin Functions
PIN
NAME
DBV, DCK
DRY
N.C.
1
1, 5
DESCRIPTION
Not connected
A
2
2
Input
GND
3
3
Ground
Y
4
4
Output
VCC
5
6
Power Pin
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
VCC
MIN
MAX
Supply voltage
–0.5
6.5
UNIT
V
(2)
VI
Input voltage
–0.5
6.5
V
VO
Voltage range applied to any output in the high-impedance or power-off state (2)
–0.5
6.5
V
VO
Voltage range applied to any output in the high or low state (2) (3)
–0.5
6.5
V
IIK
Input clamp current
VI < 0
–50
mA
IOK
Output clamp current
VO < 0
–50
mA
IO
Continuous output current
±50
mA
±100
mA
150
°C
150
°C
Continuous current through VCC or GND
TJ
Operating junction temperature
Tstg
Storage temperature
(1)
(2)
(3)
–65
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed.
The value of VCC is provided in the recommended operating conditions table.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
Electrostatic discharge
Human-body model (HBM), per AEC Q100-002
(1)
Charged-device model (CDM), per AEC Q100-011
±2000
±1000
UNIT
V
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
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6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted) (1)
VCC
Operating
Supply voltage
Data retention only
1.65
5.5
1.7
VCC = 3 V to 3.6 V
0.7 × VCC
VCC = 1.65 V to 1.95 V
Low-level input voltage
V
V
2
VCC = 4.5 V to 5.5 V
VIL
UNIT
0.65 × VCC
VCC = 2.3 V to 2.7 V
High-level input voltage
MAX
1.5
VCC = 1.65 V to 1.95 V
VIH
MIN
0.35 × VCC
VCC = 2.3 V to 2.7 V
0.7
VCC = 3 V to 3.6 V
0.8
VCC = 4.5 V to 5.5 V
V
0.3 × VCC
VI
Input voltage
0
5.5
V
VO
Output voltage
0
5.5
V
IOL
Low-level output current
4
VCC = 2.3 V
8
16
VCC = 3 V
Input transition rise or fall rate
Δt/Δv
VCC = 1.65 V
VCC = 4.5 V
32
VCC = 1.8 V ±0.15 V, 2.5 V ± 0.2 V
20
VCC = 3.3 V ± 0.3 V
10
VCC = 5 V ± 0.5 V
TA
(1)
mA
24
ns/V
5
Operating free-air temperature
–40
125
°C
All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, SCBA004.
6.4 Thermal Information
SN74LVC1G07-Q1
THERMAL METRIC (1)
DBV (SOT-23)
DCK (SC70)
DRY (SON)
UNIT
5 PINS
5 PINS
6 PINS
RθJA
Junction-to-ambient thermal resistance
269.3
301.2
439
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
175.2
186.5
277
°C/W
RθJB
Junction-to-board thermal resistance
104.9
111.8
271
°C/W
ψJT
Junction-to-top characterization parameter
73.4
78.3
84
°C/W
ψJB
Junction-to-board characterization parameter
104.5
110.6
271
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
–
–
–
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
IOL = 100 μA
VOL
1.65 V to 5.5 V
0.1
IOL = 4 mA
1.65 V
0.45
IOL = 8 mA
2.3 V
0.3
IOL = 16 mA
IOL = 32 mA
A input
V
0.55
4.5 V
VI = 5.5 V or GND
UNIT
0.4
3V
IOL = 24 mA
II
MIN TYP (1) MAX
VCC
0.55
0 to 5.5 V
±5
μA
Ioff
VI or VO = 5.5 V
ICC
VI = 5.5 V or GND,
IO = 0
ΔICC
One input at VCC – 0.6 V,
Other inputs at VCC or GND
Ci
VI = VCC or GND
3.3 V
4
pF
Co
VO = VCC or GND
3.3 V
5
pF
(1)
0
±10
μA
1.65 V to 5.5 V
10
μA
3 V to 5.5 V
500
μA
All typical values are at VCC = 3.3 V, TA = 25°C.
6.6 Switching Characteristics
over recommended operating free-air temperature range (unless otherwise noted) (see Figure 3)
PARAMETER
tpd
FROM
(INPUT)
TO
(OUTPUT)
A
Y
VCC = 1.8 V
± 0.15 V
VCC = 2.5 V
± 0.2 V
VCC = 3.3 V
± 0.3 V
VCC = 5 V
± 0.5 V
MIN
MAX
MIN
MAX
MIN
MAX
MIN MAX
2.4
9.8
1
7.0
1.5
5.7
1
UNIT
4.9
ns
6.7 Operating Characteristics
TA = 25°C
Cpd
PARAMETER
TEST CONDITIONS
Power dissipation capacitance
f = 10 MHz
VCC = 1.8 V
VCC = 2.5 V
VCC = 3.3 V
VCC = 5 V
TYP
TYP
TYP
TYP
3
3
4
6
UNIT
pF
6.8 Typical Characteristics
2.5
6
TPD
TPD
5
2
TPD - ns
TPD - ns
4
1.5
1
3
2
0.5
0
-100
1
0
-50
0
50
Temperature - °C
100
150
0
1
2
D001
Figure 1. TPD Across Temperature at 3.3V Vcc
3
Vcc - V
4
5
6
D002
Figure 2. TPD Across Vcc at 25°C
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7 Parameter Measurement Information (Open Drain)
7.1 PMI
VLOAD
S1
RL
From Output
Under Test
Open
TEST
GND
RL
CL
(see Note A)
S1
tPZL (see Notes E and F)
VLOAD
tPLZ (see Notes E and G)
VLOAD
tPHZ/tPZH
VLOAD
LOAD CIRCUIT
INPUT
VCC
VI
1.8 V ± 0.15 V
2.5 V ± 0.2 V
3.3 V ± 0.3 V
5 V ± 0.5 V
VM
tr/tf
≤ 2 ns
≤ 2 ns
≤ 2.5 ns
≤ 2.5 ns
VCC
VCC
3V
VCC
VLOAD
VCC/2
VCC/2
1.5 V
VCC/2
2 × VCC
2 × VCC
6V
2 × VCC
CL
RL
V∆
30 pF
30 pF
50 pF
50 pF
1 kΩ
500 Ω
500 Ω
500 Ω
0.15 V
0.15 V
0.3 V
0.3 V
VI
Timing Input
VM
0V
tw
tsu
VI
VM
Input
VM
th
VM
VM
Data Input
0V
0V
VOLTAGE WAVEFORMS
SETUP AND HOLD TIMES
VOLTAGE WAVEFORMS
PULSE DURATION
VI
VM
Input
VM
0V
Output
VM
VOL
tPHL
VM
tPLZ
VLOAD/2
VM
tPZH
VM
VOL
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
INVERTING AND NONINVERTING OUTPUTS
VM
0V
Output
Waveform 1
S1 at VLOAD
(see Note B)
tPLH
VOH
Output
VM
tPZL
VOH
VM
VI
Output
Control
tPHL
tPLH
VI
VOL + V∆
VOL
tPHZ
Output
Waveform 2
S1 at VLOAD
(see Note B)
VM
VLOAD/2 − V∆
VLOAD/2
≈0 V
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
LOW- AND HIGH-LEVEL ENABLING
NOTES: A. CL includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω.
D. The outputs are measured one at a time, with one transition per measurement.
E. Since this device has open-drain outputs, tPLZ and tPZL are the same as tpd.
F. tPZL is measured at VM.
G. tPLZ is measured at VOL + V∆.
H. All parameters and waveforms are not applicable to all devices.
Figure 3. Load Circuit And Voltage Waveforms
6
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8 Detailed Description
8.1 Overview
The SN74LVC1G07-Q1 device contains one open-drain buffer with a maximum sink current of 32 mA. This
device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs,
preventing damaging current backflow through the device when it is powered down.
8.2 Functional Block Diagram
2
4
Y
A
Figure 4. Logic Diagram (Positive Logic)
8.3 Feature Description
•
•
•
•
Wide operating voltage range.
– Operates from 1.65 V to 5.5 V.
Allows down-voltage translation.
Inputs and outputs accept voltages to 5.5 V.
Ioff feature allows voltages on the inputs and outputs, when VCC is 0 V.
8.4 Device Functional Modes
Table 1 lists the functional modes of SN74LVC1G07-Q1.
Table 1. Function Table
INPUT
A
OUTPUT
Y
L
L
H
Z
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The SN74LVC1G07-Q1 is a high drive CMOS device that can be used to implement a high output drive buffer,
such as an LED application. It can sink 32 mA of current at 4.5 V making it ideal for high drive and wiredOR/AND functions. It is good for high speed applications up to 100 MHz. The inputs are 5.5 V tolerant allowing it
to translate up/down to VCC.
9.2 Typical Application
Basic LED Driver
Buffer Function
VPU
VPU
VCC
uC or Logic
LVC1G07
Wired OR
uC or Logic
uC or Logic
LVC1G07
uC or Logic
LVC1G07
Figure 5. Typical Application-SN74LVC1G07-Q1
9.2.1 Design Requirements
This device uses CMOS technology and has high-output drive. Care should be taken to avoid bus contention
because it may drive currents that would exceed maximum limits. The high drive also creates fast edges into
light loads; so, routing and load conditions should be considered to prevent ringing.
9.2.2 Detailed Design Procedure
1. Recommended Input Conditions
– Rise time and fall time specs. See (Δt/ΔV) in the Recommended Operating Conditions table.
– Specified high and low levels. See (VIH and VIL) in the Recommended Operating Conditions table.
– Inputs are over-voltage tolerant allowing them to go as high as (VI max) in the Recommended Operating
Conditions table at any valid VCC.
2. Recommended Output Conditions
– Load currents should not exceed (IO max) per output and should not exceed (Continuous current through
VCC or GND) total current for the part. These limits are located in the Absolute Maximum Ratings table.
8
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Typical Application (continued)
– Outputs should not be pulled above 5.5 V.
9.2.3 Application Curve
1600
Icc
Icc
Icc
Icc
1400
1200
1.8V
2.5V
3.3V
5V
Icc - µA
1000
800
600
400
200
0
0
20
40
Frequency - MHz
60
80
D001
Figure 6. Icc vs Frequency
10 Power Supply Recommendations
The power supply can be any voltage between the min and max supply voltage rating located in the
Recommended Operating Conditions table.
Each VCC pin should have a good bypass capacitor to prevent power disturbance. A 0.1-μF capacitor is
recommended for devices with a single supply. If there are multiple VCC pins then a 0.01-μF or 0.022-μF
capacitor is recommended for each power pin. It is acceptable to parallel multiple bypass caps to reject different
frequencies of noise. 0.1-μF and 1-μF capacitors are commonly used in parallel. The bypass capacitor should be
installed as close to the power pin as possible for best results.
11 Layout
11.1 Layout Guidelines
When using multiple bit logic devices inputs should not ever float. In many cases, functions or parts of functions
of digital logic devices are unused; for example, when only two inputs of a triple-input AND gate are used or only
3 of the 4 buffer gates are used. Such input pins should not be left unconnected because the undefined voltages
at the outside connections result in undefined operational states. Specified below are the rules that must be
observed under all circumstances. All unused inputs of digital logic devices must be connected to a high or low
bias to prevent them from floating. The logic level that should be applied to any particular unused input depends
on the function of the device. Generally, they are tied to GND or VCC, whichever is more convenient.
11.2 Layout Example
VCC
Unused Input
Input
Output
Unused Input
Output
Input
Figure 7. Layout Example
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12 Device and Documentation Support
12.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.2 Community Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
12.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
10
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
SN74LVC1G07QDBVRQ1
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
CCQO
SN74LVC1G07QDCKRQ1
ACTIVE
SC70
DCK
5
3000
RoHS & Green
SN
Level-2-260C-1 YEAR
-40 to 125
16J
SN74LVC1G07QDCKTQ1
ACTIVE
SC70
DCK
5
250
RoHS & Green
SN
Level-2-260C-1 YEAR
-40 to 125
16J
SN74LVC1G07QDRYRQ1
ACTIVE
SON
DRY
6
5000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
HL
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of