TL5002IDG4

  
  
 
 
  SLVS304A − SEPTEMBER 2000 − REVISED AUGUST 2002 D D D D D D D D PACKAGE (TOP VIEW) Complete PWM Power Control 3.6-V to 40-V Operation Internal Undervoltage-Lockout Circuit Oscillator Frequency . . . 20 kHz to 500 kHz Variable Dead Time Provides Control Over Total Range Ideal Controller for DDR Memory Application Uncommitted Error Amplifier Inputs OUT VCC COMP INV 1 8 2 7 3 6 4 5 GND RT DTC NI description The TL5002 incorporates on a single monolithic chip all the functions required for a pulse-width-modulation (PWM) control circuit. Designed primarily for power-supply control, the TL5002 contains an error amplifier, a regulator, an oscillator, a PWM comparator with a dead-time-control input, undervoltage lockout (UVLO), and an open-collector output transistor. The error-amplifier input common-mode voltage ranges from 0.9 V to 1.5 V. Dead-time control (DTC) can be set to provide 0% to 100% dead time by connecting an external resistor between DTC and GND. The oscillator frequency is set by terminating RT with an external resistor to GND. During low VCC conditions, the UVLO circuit turns the output off until VCC recovers to its normal operating range. The TL5002 is characterized for operation from − 40°C to 85°C. AVAILABLE OPTIONS TA SMALL OUTLINE (D) −20°C to 85°C TL5002CD −40°C to 85°C TL5002ID The D package is available taped and reeled. Add the suffix R to the device type (e.g., TL5002CDR). functional block diagram VCC 2 DTC 6 RT 7 OUT 1 UVLO IDT 5 NI INV COMP 4 Error Amplifier Reference Voltage 2.5 V + OSC − PWM/DTC Comparator 3 8 GND Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Copyright  2002, Texas Instruments Incorporated  
 
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  SLVS304A − SEPTEMBER 2000 − REVISED AUGUST 2002 detailed description voltage reference A 2.5-V regulator operating from VCC is used to power the internal circuitry of the TL5002. error amplifier The error amplifier compares a sample of the dc-to-dc converter output voltage to an external reference voltage and generates an error signal for the PWM comparator. The dc-to-dc converter output voltage is set by selecting the error-amplifier gain (see Figure 1), using the following expression: VO = (1 + R1/R2) (1 V) Compensation Network R1 VI(FB) R2 Vref 3 COMP 4 INV 5 NI TL5002 − + To PWM Comparator 8 GND Figure 1. Error-Amplifier Gain Setting The error-amplifier output is brought out as COMP for use in compensating the dc-to-dc converter control loop for stability. Because the amplifier can only source 45 µA, the total dc load resistance should be 100 kΩ or more. oscillator/PWM The oscillator frequency (fosc) can be set between 20 kHz and 500 kHz by connecting a resistor between RT and GND. Acceptable resistor values range from 15 kΩ to 250 kΩ. The oscillator frequency can be determined by using the graph shown in Figure 5. The oscillator output is a triangular wave with a minimum value of approximately 0.7 V and a maximum value of approximately 1.3 V. The PWM comparator compares the error-amplifier output voltage and the DTC input voltage to the triangular wave and turns the output transistor off whenever the triangular wave is greater than the lesser of the two inputs. dead-time control (DTC) DTC provides a means of limiting the output-switch duty cycle to a value less than 100 %, which is critical for boost and flyback converters. A current source generates a reference current (IDT) at DTC that is nominally equal to the current at the oscillator timing terminal, RT. Connecting a resistor between DTC and GND generates a dead-time reference voltage (VDT), which the PWM/DTC comparator compares to the oscillator triangle wave as described in the previous section. Nominally, the maximum duty cycle is 0% when VDT is 0.7 V or less and 100 % when VDT is 1.3 V or greater. Because the triangle wave amplitude is a function of frequency and the source impedance of RT is relatively high (1250 Ω), choosing RDT for a specific maximum duty cycle, D, is accomplished using the following equation and the voltage limits for the frequency in question as found in Figure 11 (Voscmax and Voscmin are the maximum and minimum oscillator levels): 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 
  
  
 
 
  SLVS304A − SEPTEMBER 2000 − REVISED AUGUST 2002 dead-time control (DTC) (continued) R DT ǒ Ǔ ƪDǒVoscmax – VoscminǓ ) Voscminƫ + R t ) 1250 Where RDT and Rt are in ohms, D in decimal Soft start can be implemented by paralleling the DTC resistor with a capacitor (CDT) as shown in Figure 2. During soft start, the voltage at DTC is derived by the following equation: V DT [I R DT DT ǒ 1– e ǒ–tńR DTC DTǓ Ǔ 6 DTC CDT TL5002 RDT Figure 2. Soft-Start Circuit If the dc-to-dc converter must be in regulation within a specified period of time, the time constant, RDTCDT, should be t0/3 to t0/5. The TL5002 remains off until VDT ≈ 0.7 V, the minimum ramp value. CDT is discharged every time UVLO becomes active. undervoltage-lockout (UVLO) protection The undervoltage-lockout circuit turns the output transistor off whenever the supply voltage drops too low (approximately 3 V at 25°C) for proper operation. A hysteresis voltage of 200 mV eliminates false triggering on noise and chattering. output transistor The output of the TL5002 is an open-collector transistor with a maximum collector current rating of 21 mA and a voltage rating of 51 V. The output is turned on under the following conditions: the oscillator triangle wave is lower than both the DTC voltage and the error-amplifier output voltage, and the UVLO circuit is inactive. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 3 
  
  
 
 
  SLVS304A − SEPTEMBER 2000 − REVISED AUGUST 2002 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage, VCC (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 V Amplifier input voltage, VI(INV), VI(NI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 V Output voltage, VO, OUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 V Output current, IO, OUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 mA Output peak current, IO(peak), OUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table Operating ambient temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 85°C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: All voltage values are with respect to network ground terminal. DISSIPATION RATING TABLE PACKAGE TA ≤ 25°C POWER RATING DERATING FACTOR ABOVE TA = 25°C TA = 70°C POWER RATING TA = 85°C POWER RATING TA = 125°C POWER RATING D 725 mW 5.8 mW/°C 464 mW 377 mW 145 mW recommended operating conditions MIN MAX Supply voltage, VCC 3.6 40 UNIT V Amplifier input voltage, VI(INV), VI(NI) 0.9 1.5 V Output voltage, VO, OUT 50 V Output current, IO, OUT 20 mA COMP source current 45 µA COMP dc load resistance 100 Oscillator timing resistor, Rt Oscillator frequency, fosc Operating ambient temperature, TA 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 kΩ 15 250 kΩ 20 500 kHz −40 85 °C 
  
  
 
 
  SLVS304A − SEPTEMBER 2000 − REVISED AUGUST 2002 electrical characteristics over recommended operating free-air temperature range, VCC = 6 V, fosc = 100 kHz (unless otherwise noted) undervoltage lockout PARAMETER TEST CONDITIONS Upper threshold voltage TL5002C MIN TYP† MAX TA = 25°C TA = 25°C Lower threshold voltage Hysteresis † All typical values are at TA = 25°C. 3 UNIT V 2.8 V TA = 25°C 100 200 mV TEST CONDITIONS TL5002C MIN TYP† MAX UNIT 100 kHz 15 kHz oscillator PARAMETER Frequency Rt = 100 kΩ Standard deviation of frequency Frequency change with voltage VCC = 3.6 V to 40 V TA = − 40°C to 25°C 1 TA = − 20°C to 25°C TA = 25°C to 85°C Frequency change with temperature kHz −4 −0.4 4 kHz −4 −0.4 4 kHz −4 −0.2 4 kHz Voltage at RT † All typical values are at TA = 25°C. 1 V dead-time control PARAMETER Output (source) current TEST CONDITIONS TL5002 Input threshold voltage V(DT) = 1.5 V Duty cycle = 0% MIN TL5002C TYP† 0.9 × IRT‡ MAX 1.2 × IRT 0.5 0.7 Duty cycle = 100% 1.3 1.5 UNIT µA V † All typical values are at TA = 25°C. ‡ Output source current at RT error amplifier PARAMETER TEST CONDITIONS Input voltage VCC = 3.6 V to 40 V MIN 0.3 Input bias current −160 Positive Output voltage swing TL5002C TYP† MAX 1.5 Negative Unity-gain bandwidth Output (sink) current VI(INV) = 1.2 V, VI(INV) = 0.8 V, Output (source) current † All typical values are at TA = 25°C. POST OFFICE BOX 655303 1.5 V −500 nA 2.3 0.3 Open-loop voltage amplification UNIT V 0.4 V 80 dB 1.5 MHz COMP = 1 V 100 600 µA COMP = 1 V −45 −70 µA • DALLAS, TEXAS 75265 5 
  
  
 
 
  SLVS304A − SEPTEMBER 2000 − REVISED AUGUST 2002 electrical characteristics over recommended operating free-air temperature range, VCC = 6 V, fosc = 100 kHz (unless otherwise noted) (continued) output PARAMETER TEST CONDITIONS Output saturation voltage IO = 10 mA VO = 50 V, Off-state current TL5002C MIN TYP† MAX UNIT 1.5 V VCC = 0 10 VO = 50 V VO = 6 V Short-circuit output current † All typical values are at TA = 25°C. 2 10 40 µA A mA total device PARAMETER Standby supply current TEST CONDITIONS Off state Average supply current † All typical values are at TA = 25°C. Rt = 100 kΩ PARAMETER MEASUREMENT INFORMATION COMP DTC OSC PWM/DTC Comparator OUT VCC 3V Figure 3. PWM Timing Diagram 6 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 MIN TL5002C TYP† MAX UNIT 1 1.5 mA 1.4 2.1 mA 
  
  
 
 
  SLVS304A − SEPTEMBER 2000 − REVISED AUGUST 2002 TYPICAL CHARACTERISTICS OSCILLATION FREQUENCY vs AMBIENT TEMPERATURE OSCILLATOR FREQUENCY vs TIMING RESISTANCE 100 VCC = 6 V DT Resistance = Rt TA = 25°C fosc − Oscillation Frequency − kHz fosc − Oscillator Frequency − Hz 1M 100 k 10 k 10 k 100 k 98 96 94 92 90 88 − 50 1M VCC = 6 V Rt = 100 kΩ DT Resistance = 100 kΩ − 25 0 50 75 100 TA − Ambient Temperature − °C Rt − Timing Resistance − Ω Figure 5 Figure 4 AVERAGE SUPPLY CURRENT vs POWER-SUPPLY VOLTAGE AVERAGE SUPPLY CURRENT vs AMBIENT TEMPERATURE 2 1.3 I CC − Average Supply Current − mA Rt = 100 kΩ TA = 25 °C I CC − Average Supply Current − mA 25 1.5 1 0.5 0 0 10 20 30 40 VCC = 6 V Rt = 100 kΩ DT Resistance = 100 kΩ 1.2 1.1 1 0.9 0.8 0 − 50 − 25 0 25 50 75 100 TA − Ambient Temperature − °C VCC − Power-Supply Voltage − V Figure 6 Figure 7 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 7 
  
  
 
 
  SLVS304A − SEPTEMBER 2000 − REVISED AUGUST 2002 TYPICAL CHARACTERISTICS ERROR AMPLIFIER OUTPUT VOLTAGE vs OUTPUT (SINK) CURRENT PWM TRIANGLE WAVE AMPLITUDE VOLTAGE vs OSCILLATOR FREQUENCY 3 VCC = 6 V TA = 25 °C VO − Error Amplifier Output Voltage − V PWM Triangle Wave Amplitude Voltage − V 1.8 1.5 Voscmax (100% duty cycle) 1.2 0.9 Voscmin (zero duty cycle) 0.6 0.3 0 10 k VCC = 6 V VI(INV) = 1.2 V VI(NI) = 1 V TA = 25 °C 2.5 2 1.5 1 0.5 0 100 k 1M fosc − Oscillator Frequency − Hz 0 10 M 0.2 Figure 8 ERROR AMPLIFIER OUTPUT VOLTAGE vs AMBIENT TEMPERATURE 2.46 VO − Error Amplifier Output Voltage − V 3 VO − Error Amplifier Output Voltage − V 0.6 Figure 9 ERROR AMPLIFIER OUTPUT VOLTAGE vs OUTPUT (SOURCE) CURRENT 2.5 2 1.5 1 VCC = 6 V VI(INV) = 0.8 V VI(NI) = 1 V TA = 25 °C 0.5 0 0 60 80 100 20 40 IO − Output (Source) Current − µA 120 2.45 VCC = 6 V VI(INV) = 0.8 V VI(NI) = 1 V No Load 2.44 2.43 2.42 2.41 2.40 − 50 25 50 75 − 25 0 TA − Ambient Temperature − °C Figure 11 Figure 10 8 0.4 IO − Output (Sink) Current − mA POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 100 
  
  
 
 
  SLVS304A − SEPTEMBER 2000 − REVISED AUGUST 2002 TYPICAL CHARACTERISTICS OUTPUT DUTY CYCLE vs DTC VOLTAGE ERROR AMPLIFIER OUTPUT VOLTAGE vs AMBIENT TEMPERATURE 120 200 180 160 80 60 40 20 140 0 − 25 0 25 50 75 TA − Ambient Temperature − °C 0 100 0.5 Figure 12 1 DTC Voltage − V 1.5 2 Figure 13 ERROR AMPLIFIER CLOSED-LOOP GAIN AND PHASE SHIFT vs FREQUENCY 40 VCC = 6 V TA = 25 °C −180° 30 −210° 20 −240° AV −270° 10 0 φ −330° − 10 − 20 10 k −300° φ − Phase Shift 120 − 50 VCC = 6 V Rt = 100 kΩ TA = 25 °C 100 Output Duty Cycle − % 220 VCC = 6 V VI(INV) = 1.2 V VI(NI) = 1 V No Load AV− Error Amplifier Closed-Loop Gain and Phase Shift − dB VO − Error Amplifier Output Voltage − mV 240 100 k 1M −360° 10 M f − Frequency − Hz Figure 14 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 9 
  
  
 
 
  SLVS304A − SEPTEMBER 2000 − REVISED AUGUST 2002 TYPICAL CHARACTERISTICS OUTPUT SATURATION VOLTAGE vs OUTPUT (SINK) CURRENT DTC OUTPUT CURRENT vs RT OUTPUT CURRENT 2 − 60 VCC = 6 V TA = 25 °C − 50 VCE − Output Saturation Voltage − V IO(DT) − DTC Output Current − µ A DT Voltage = 1.3 V TA = 25 °C − 40 − 30 − 20 − 10 0 1.5 1 0.5 0 0 − 10 − 20 − 30 − 40 − 50 − 60 0 IO − RT Output Current − µA Figure 15 10 5 10 15 IO − Output (Sink) Current − mA Figure 16 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 20 
  
  
 
 
  SLVS304A − SEPTEMBER 2000 − REVISED AUGUST 2002 4 INV 7 RT 8 GND NI 5 OUT COMP 2 3 DTC JP1 + 4 VCC 1 8 BOOT 7 HIGHDR 6 BOOTLO 3 2 PGND DT 5 1 IN LOWDR VCC 6 + + VTT GND APPLICATION INFORMATION Figure 17. DDRI Application POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 11 
  
  
 
 
  SLVS304A − SEPTEMBER 2000 − REVISED AUGUST 2002 APPLICATION INFORMATION PARTIAL BILL OF MATERIALS QUANTITY 12 REF DES PART NUMBER DESCRIPTION MANUFACTURER SIZE 1 C1 UUD1C471MNR1GS Capacitor, aluminum Nichicon 0.327 x 0.327 6 C2 − C6, C13 EMK325BJ106MN−B Capacitor, ceramic Taiyo Yuden 1210 3 C7, C8, C20 GRM40X7R105K16PT Capacitor, ceramic, jumper Murata 805 2 C9, C10 EEF−CD0D101R Capacitor, aluminum Panasonic 7343 1 C14 08055A102JAT2A Capacitor, ceramic AVX 805 1 C15 GRM39X7R104K016D Capacitor, ceramic Murata 603 1 C16 NMC0805X7R224K16TR Capacitor, ceramic NIP 603 1 C17 VJ0603Y222KXANT Capacitor, ceramic Murata 603 1 C18 C0603C223J3RACTU Capacitor, ceramic Kemet 603 1 C19 GRM39X7R223K16 Capacitor, ceramic Murata 603 1 D1 1SMB5919BT3 Diode, zener, 5.6 V On Semi SMB 2 J1, J2 ED1609 Terminal block, 2-pin OST 1 J3 PTC36SAAN Header, 4-pin Sullins 1 JP1 PTC36SAAN Header, 2-pin Sullins 1 L1 UP2B−1R0 Inductor, SMT Coiltronics 1 L2 UP4B−2R2 Inductor, SMT Coiltronics 4 Q1 − Q4 IRF7811 MOSFET, N−ch, 30 V IR SO8 3 R1, R2, R4 Std Resistor, chip, 4.7 Ω Std 603 1 R3 Std Resistor, chip, 2.49 KΩ Std 603 2 R5, R6 Std Resistor, chip, 0 Ω Std 603 1 R7 Std Resistor, chip, 20 KΩ Std 603 1 R8 Std Resistor, chip, 162 KΩ Std 603 1 R9 Std Resistor, chip, 1.74 KΩ Std 603 1 R10 Std Resistor, chip, 7.32 KΩ Std 603 1 R11 Std Open Std 603 1 R12 Std Resistor, chip, 15 KΩ Std 603 1 R13 Std Resistor, chip, 10 Ω Std 603 1 R14 Std Resistor, chip, 10 KΩ Std 603 4 TP1 − TP3, TP5 240-345 Test point, red, 1 mm Farnell 0.038 1 TP4 131-4244-00 or 131-5031-00 Adaptor, 3.5 mm probe Tektronix 0.200 1 TP6 1045-3-17-15-30-14-02-0 Post, wirewrap Mill-Max 0.043 1 U1 TPS2837D IC, MOSFET driver Texas Instruments SO8 1 U2 TL5002D IC, low-cost PMW Texas Instruments SO8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 0.55 x 0.41 PACKAGE OPTION ADDENDUM www.ti.com 14-Oct-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) TL5002CD ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -20 to 85 5002CD Samples TL5002CDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -20 to 85 5002CD Samples TL5002ID ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 5002ID Samples TL5002IDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 5002ID Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of