TLC251CPW

TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 D D D D D Wide Range of Supply Voltages 1.4-V to 16-V True Single-Supply Operation Common-Mode Input Voltage Range Includes the Negative Rail Low Noise . . . 30 nV/√Hz Typ at 1-kHz (High Bias) ESD Protection Exceeds 2000 V Per MIL-STD-833C, Method 3015.1 D OR P PACKAGE (TOP VIEW) OFFSET N1 IN – IN + VDD – /GND 1 8 2 7 3 6 4 5 BIAS SELECT VDD OUT OFFSET N2 symbol description BIAS SELECT The TLC251C, TLC251AC, and TLC251BC are low-cost, low-power programmable operational + IN + amplifiers designed to operate with single or dual OUT IN – supplies. Unlike traditional metal-gate CMOS – operational amplifiers, these devices utilize Texas Instruments silicon-gate LinCMOS process, OFFSET N1 giving them stable input offset voltages without OFFSET N2 sacrificing the advantages of metal-gate CMOS. This series of parts is available in selected grades of input offset voltage and can be nulled with one external potentiometer. Because the input common-mode range extends to the negative rail and the power consumption is extremely low, this family is ideally suited for battery-powered or energy-conserving applications. A bias-select pin can be used to program one of three ac performance and power-dissipation levels to suit the application. The series features operation down to a 1.4-V supply and is stable at unity gain. These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised in handling these devices as exposure to ESD may result in a degradation of the device parametric performance. Because of the extremely high input impedance and low input bias and offset currents, applications for the TLC251C series include many areas that have previously been limited to BIFET and NFET product types. Any circuit using high-impedance elements and requiring small offset errors is a good candidate for cost-effective use of these devices. Many features associated with bipolar technology are available with LinCMOS operational amplifiers without the power penalties of traditional bipolar devices. Remote and inaccessible equipment applications are possible using the low-voltage and low-power capabilities of the TLC251C series. In addition, by driving the bias-select input with a logic signal from a microprocessor, these operational amplifiers can have software-controlled performance and power consumption. The TLC251C series is well suited to solve the difficult problems associated with single battery and solar cell-powered applications. The TLC251C series is characterized for operation from 0°C to 70°C. AVAILABLE OPTIONS TA VIOmax AT 25°C 0°C to 70°C 10 mV 5 mV 2 mV PACKAGED DEVICES SMALL OUTLINE (D) TLC251CD TLC251ACD TLC251BCD PLASTIC DIP (P) TLC251CP TLC251ACP TLC251BCP CHIP FORM (Y) TLC251Y — — The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC251CDR). Chips are tested at 25°C. LinCMOS is a trademark of Texas Instruments. Copyright  2001, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 1 TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 schematic VDD 7 Current Control IN + IN – 3 ESDProtective Network 2 ESDProtective Network ESDProtective Network 8 BIAS SELECT 6 OFFSET N1 1 OFFSET N2 5 VDD – /GND 2 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 OUT TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 TLC251Y chip information These chips, properly assembled, display characteristics similar to the TLC251C. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive epoxy or a gold-silicon preform. BONDING PAD ASSIGNMENTS (2) VDD (1) (8) (7) BIAS SELECT IN + (8) (3) (2) IN – OFFSET N1 OFFSET N2 48 (7) + (6) OUT – (1) (5) (4) VDD – /GND CHIP THICKNESS: 15 TYPICAL BONDING PADS: 4 × 4 MINIMUM TJMAX = 150°C (3) (4) (5) (6) TOLERANCES ARE ± 10%. ALL DIMENSIONS ARE IN MILS. 55 PIN (4) IS INTERNALLY CONNECTED TO BACKSIDE OF CHIP. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 3 TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V Differential input voltage, VID (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V Input voltage range, VI (any input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to 18 V Duration of short circuit at (or below) 25°C free-air temperature (see Note 3) . . . . . . . . . . . . . . . . . . unlimited Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values, except differential voltages, are with respect to VDD – /GND. 2. Differential voltages are at IN+ with respect to IN –. 3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure the maximum dissipation rating is not exceeded. DISSIPATION RATING TABLE TA ≤ 25°C POWER RATING DERATING FACTOR ABOVE TA = 25°C TA = 70°C POWER RATING D 725 mW 5.8 mW/°C 464 mW P 1000 mW 8.0 mW/°C 640 mW PACKAGE recommended operating conditions MIN Supply voltage, VDD Common mode input voltage, Common-mode voltage VIC VDD = 1.4 V VDD = 5 V VDD = 10 V VDD = 16 V Operating free-air temperature, TA 1.4 16 0 0.2 – 0.2 4 – 0.2 9 – 0.2 14 0 70 UNIT V V °C See Application Information Bias-select voltage 4 MAX POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 HIGH-BIAS MODE electrical characteristics at specified free-air temperature TLC251C, TLC251AC, TLC251BC TEST CONDITIONS PARAMETER TA† VDD = 5 V TYP MAX MIN 25°C TLC251C VIO Input offset voltage TLC251AC VO = 1 1.4 4V V, VIC = 0 V,, RS = 50 Ω, RL = 10 kΩ TLC251BC αVIO Average temperature coefficient of input offset voltage IIO Input offset current (see Note 4) IIB Input bias current (see Note 4) VICR VOH VOL AVD CMRR Full range Low-level output voltage L i l differential diff ti l voltage lt Large-signal am lification amplification Common-mode rejection ratio 10 1.1 12 25°C 0.9 Full range 25°C 0.34 0.9 10 5 6.5 2 0.39 3 3 1.8 VO = VDD/2,, VIC = VDD/2 25°C 0.1 60 0.1 60 70°C 7 300 7 300 VO = VDD/2,, VIC = VDD/2 25°C 0.6 60 0.7 60 70°C 40 600 50 600 – 0.2 to 4 Full range – 0.2 to 3.5 VID = 100 mV, V RL = 10 kΩ VID = – 100 mV, V IOL = 0 kΩ RL = 10 kΩ, See Note 6 VIC = VICRmin µV/°C 2 – 0.3 to 4.2 – 0.2 to 9 – 0.3 to 9.2 pA V 3.2 3.8 8 8.5 0°C 3 3.8 7.8 8.5 70°C 3 3.8 7.8 8.4 V 25°C 0 50 0 50 0°C 0 50 0 50 0 50 0 50 25°C 5 23 10 36 0°C 4 27 7.5 42 70°C 4 20 7.5 32 25°C 65 80 65 85 0°C 60 84 60 88 70°C 60 85 60 88 25°C 65 95 65 95 0°C 60 94 60 94 70°C 60 96 60 96 mV V/mV dB Supply-voltage S l lt rejection j ti ratio ti (∆VDD/∆VIO) VDD = 5 V to t 10 V, V VO = 1 1.4 4V II(SEL) Input current (BIAS SELECT) VI(SEL) = 0 25°C – 1.4 675 1600 950 2000 Supply current VO = VDD/2, VIC = VDD/2, N lload d No 25°C IDD 0°C 775 1800 1125 2200 70°C 575 1300 750 1700 kSVR pA V – 0.2 to 8.5 25°C 70°C mV 2 25°C to 70°C 25°C UNIT 12 5 6.5 Full range Common-mode input voltage g range (see Note 5) High-level output voltage 1.1 VDD = 10 V TYP MAX MIN dB µA – 1.9 µA † Full range is 0°C to 70°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 5 TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 HIGH-BIAS MODE operating characteristics, VDD = 5 V PARAMETER TEST CONDITIONS TA TLC251C, TLC251AC, TLC251BC MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 10 kΩ, kΩ CL = 20 pF VI(PP) ( ) = 2.5 V Vn BOM B1 φm Equivalent input noise voltage Maximum output-swing bandwidth Unity-gain bandwidth Phase margin f = 1 kHz, VO = VOH, VI = 10 mV, VI = 10 mV, RS = 20 Ω CL = 20 pF, RL = 10 kΩ CL = 20 pF f = B1, CL = 20 pF TYP 25°C 3.6 0°C 4 70°C 3 25°C 2.9 0°C 3.1 70°C 2.5 25°C 25 25°C 320 0°C 340 70°C 260 25°C 1.7 0°C 2 70°C 1.3 25°C 46° 0°C 47° 70°C 44° UNIT MAX V/µs nV/√Hz kHz MHz operating characteristics, VDD = 10 V PARAMETER TEST CONDITIONS TA TLC251C, TLC251AC, TLC251BC MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 10 kΩ, kΩ CL = 20 pF VI(PP) ( ) = 5.5 V Vn BOM B1 φm 6 Equivalent input noise voltage Maximum output-swing bandwidth Unity-gain bandwidth Phase margin f = 1 kHz, VO = VOH, VI = 10 mV, VI = 10 mV, RS = 20 Ω CL = 20 pF, RL = 10 kΩ CL = 20 pF f = B1, POST OFFICE BOX 655303 CL = 20 pF • DALLAS, TEXAS 75265 TYP 25°C 5.3 0°C 5.9 70°C 4.3 25°C 4.6 0°C 5.1 70°C 3.8 25°C 25 25°C 200 0°C 220 70°C 140 25°C 2.2 0°C 2.5 70°C 1.8 25°C 49° 0°C 50° 70°C 46° UNIT MAX V/µs nV/√Hz kHz MHz TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 MEDIUM-BIAS MODE electrical characteristics at specified free-air temperature TLC251C, TLC251AC, TLC251BC TEST CONDITIONS PARAMETER TA† VDD = 5 V TYP MAX MIN 25°C TLC251C VIO Input offset voltage TLC251AC VO = 1 1.4 4V V, VIC = 0 V,, RS = 50 Ω, RL = 10 kΩ TLC251BC αVIO Average temperature coefficient of input offset voltage IIO Input offset current (see Note 4) IIB Input bias current (see Note 4) VICR VOH VOL AVD CMRR Full range Low-level output voltage L i l differential diff ti l voltage lt Large-signal am lification amplification Common-mode rejection ratio 10 1.1 12 25°C 0.9 Full range 25°C 0.34 0.9 10 5 6.5 2 0.39 3 3 1.7 VO = VDD/2,, VIC = VDD/2 25°C 0.1 60 0.1 60 70°C 7 300 7 300 VO = VDD/2,, VIC = VDD/2 25°C 0.6 60 0.7 60 70°C 40 600 50 600 – 0.2 to 4 Full range – 0.2 to 3.5 VID = 100 mV, V RL = 10 kΩ VID = – 100 mV, V IOL = 0 kΩ RL = 10 kΩ, See Note 6 VIC = VICRmin µV/°C 2.1 – 0.3 to 4.2 – 0.2 to 9 – 0.3 to 9.2 pA V 25°C 3.2 3.9 8 8.7 0°C 3 3.9 7.8 8.7 70°C 3 4 7.8 8.7 V 25°C 0 50 0 50 0°C 0 50 0 50 0 50 0 50 25°C 25 170 25 275 0°C 15 200 15 320 70°C 15 140 15 230 25°C 65 91 65 94 0°C 60 91 60 94 70°C 60 92 60 94 25°C 70 93 70 93 0°C 60 92 60 92 70°C 60 94 60 94 mV V/mV dB Supply-voltage S l lt rejection j ti ratio ti (∆VDD/∆VIO) VDD = 5 V to t 10 V, V VO = 1 1.4 4V II(SEL) Input current (BIAS SELECT) VI(SEL) = VDD/2 25°C – 130 105 280 143 300 Supply current VO = VDD/2, VIC = VDD/2, N lload d No 25°C IDD 0°C 125 320 173 400 70°C 85 220 110 280 kSVR pA V – 0.2 to 8.5 70°C mV 2 25°C to 70°C 25°C UNIT 12 5 6.5 Full range Common-mode input voltage g range (see Note 5) High-level output voltage 1.1 VDD = 10 V TYP MAX MIN dB – 160 nA µA † Full range is 0°C to 70°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 7 TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 MEDIUM-BIAS MODE operating characteristics, VDD = 5 V PARAMETER TEST CONDITIONS TA TLC251C, TLC251AC, TLC251BC MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 100 kΩ kΩ, CL = 20 pF VI(PP) ( ) = 2.5 V Vn BOM B1 φm Equivalent input noise voltage Maximum output-swing bandwidth Unity-gain bandwidth Phase margin RS = 20 Ω f = 1 kHz, VO = VOH, CL = 20 pF, VI = 10 mV, RL = 100 kΩ CL = 20 pF VI = 10 mV, f = B1, CL = 20 pF TYP 25°C 0.43 0°C 0.46 70°C 0.36 25°C 0.40 0°C 0.43 70°C 0.34 25°C 32 25°C 55 0°C 60 70°C 50 25°C 525 0°C 600 70°C 400 25°C 40° 0°C 41° 70°C 39° UNIT MAX V/µs nV/√Hz kHz kHz operating characteristics, VDD = 10 V PARAMETER TEST CONDITIONS TA TLC251C, TLC251AC, TLC251BC MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 100 kΩ kΩ, CL = 20 pF VI(PP) ( ) = 5.5 V Vn BOM B1 φm 8 Equivalent input noise voltage Maximum output-swing bandwidth Unity-gain bandwidth Phase margin f = 1 kHz, VO = VOH, VI = 10 mV, VI = 10 mV, RS = 20 Ω CL = 20 pF, RL = 100 kΩ CL = 20 pF f = B1, POST OFFICE BOX 655303 CL = 20 pF • DALLAS, TEXAS 75265 TYP 25°C 0.62 0°C 0.67 70°C 0.51 25°C 0.56 0°C 0.61 70°C 0.46 25°C 32 25°C 35 0°C 40 70°C 30 25°C 635 0°C 710 70°C 510 25°C 43° 0°C 44° 70°C 42° UNIT MAX V/µs nV/√Hz kHz kHz TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 LOW-BIAS MODE electrical characteristics at specified free-air temperature TLC251C, TLC251AC, TLC251BC TEST CONDITIONS PARAMETER TA† VDD = 5 V TYP MAX MIN 25°C TLC251C VIO Input offset voltage TLC251AC VO = 1 1.4 4V V, VIC = 0 V,, RS = 50 Ω, RL = 10 MΩ TLC251BC αVIO Average temperature coefficient of input offset voltage IIO Input offset current (see Note 4) IIB Input bias current (see Note 4) VICR VOH VOL AVD CMRR Full range Low-level output voltage L i l differential diff ti l voltage lt Large-signal am lification amplification Common-mode rejection ratio 10 1.1 12 25°C 0.9 Full range 25°C 0.24 0.9 10 5 6.5 2 0.26 3 3 1.1 VO = VDD/2,, VIC = VDD/2 25°C 0.1 60 0.1 60 70°C 7 300 7 300 VO = VDD/2,, VIC = VDD/2 25°C 0.6 60 0.7 60 70°C 40 600 50 600 – 0.2 to 4 Full range – 0.2 to 3.5 VID = 100 mV, V RL = 1 MΩ VID = – 100 mV, V IOL = 0 MΩ RL = 1 MΩ, See Note 6 VIC = VICRmin µV/°C 1 – 0.3 to 4.2 – 0.2 to 9 – 0.3 to 9.2 pA V 3.2 4.1 8 8.9 0°C 3 4.1 7.8 8.9 70°C 3 4.2 7.8 8.9 V 25°C 0 50 0 50 0°C 0 50 0 50 0 50 0 50 25°C 50 520 50 870 0°C 50 700 50 1030 70°C 50 380 50 660 25°C 65 94 65 97 0°C 60 95 60 97 70°C 60 95 60 97 25°C 70 97 70 97 0°C 60 97 60 97 70°C 60 98 60 98 mV V/mV dB Supply-voltage S l lt rejection j ti ratio ti (∆VDD/∆VIO) VDD = 5 V to t 10 V, V VO = 1 1.4 4V II(SEL) Input current (BIAS SELECT) VI(SEL) = VDD 25°C 65 10 17 14 23 Supply current VO = VDD/2, VIC = VDD/2, N lload d No 25°C IDD 0°C 12 21 18 33 70°C 8 14 11 20 kSVR pA V – 0.2 to 8.5 25°C 70°C mV 2 25°C to 70°C 25°C UNIT 12 5 6.5 Full range Common-mode input voltage g range (see Note 5) High-level output voltage 1.1 VDD = 10 V TYP MAX MIN dB 95 nA µA † Full range is 0°C to 70°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 9 TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 LOW-BIAS MODE operating characteristics, VDD = 5 V PARAMETER TEST CONDITIONS TA TLC251C, TLC251AC, TLC251BC MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 1 MΩ MΩ, CL = 20 pF VI(PP) ( ) = 2.5 V Vn BOM B1 φm Equivalent input noise voltage Maximum output-swing bandwidth Unity-gain bandwidth Phase margin f = 1 kHz, VO = VOH, VI = 10 mV, VI = 10 mV, RS = 20 Ω CL = 20 pF, RL = 1 MΩ CL = 20 pF f = B1, CL = 20 pF TYP 25°C 0.03 0°C 0.04 70°C 0.03 25°C 0.03 0°C 0.03 70°C 0.02 25°C 68 25°C 5 0°C 6 70°C 4.5 25°C 85 0°C 100 70°C 65 25°C 34° 0°C 36° 70°C 30° UNIT MAX V/µs nV/√Hz kHz kHz operating characteristics, VDD = 10 V PARAMETER TEST CONDITIONS TA TLC251C, TLC251AC, TLC251BC MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 1 MΩ MΩ, CL = 20 pF VI(PP) ( ) = 5.5 V Vn BOM B1 φm 10 Equivalent input noise voltage Maximum output-swing bandwidth Unity-gain bandwidth Phase margin f = 1 kHz, VO = VOH, VI = 10 mV, VI = 10 mV, RS = 20 Ω CL = 20 pF, RL = 1 MΩ CL = 20 pF f = B1, POST OFFICE BOX 655303 CL = 20 pF • DALLAS, TEXAS 75265 TYP 25°C 0.05 0°C 0.05 70°C 0.04 25°C 0.04 0°C 0.05 70°C 0.04 25°C 68 25°C 1 0°C 1.3 70°C 0.9 25°C 110 0°C 125 70°C 90 25°C 38° 0°C 40° 70°C 34° UNIT MAX V/µs nV/√Hz kHz kHz TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 electrical characteristics at specified free-air temperature, VDD = 1.4 V TA‡ TEST CONDITIONS† PARAMETER BIAS TLC251C, TLC251AC, TLC251BC MIN 25°C TLC251C VIO Input offset voltage TLC251AC Full range 2V VO = 0 0.2 V, 25°C RS = 50 Ω Full range 25°C TLC251BC Full range αVIO Average temperature coefficient of input offset voltage IIO Input offset current VO = 0 0.2 2V IIB Input bias current VO = 0 0.2 2V VICR Common-mode input voltage range VOM Peak output voltage swing§ VID = 100 mV AVD Large-signal differential g g voltage amplification VO = 100 to 300 mV mV, RS = 50 Ω 25°C CMRR Common-mode rejection ratio RS = 50 Ω, VIC = VICRmin VO = 0.2 V, 25°C IDD Supply current 2V VO = 0 0.2 V, No load 25°C 25°C to 70°C 25°C Full range 25°C Full range TYP 10 Any 12 5 Any 6.5 mV 2 Any 3 Any µV/°C 1 1 Any 60 300 1 Any 60 600 25°C Any 0 to 0.2 25°C Any 450 700 Low 20 10 60 pA pA V High Any UNIT MAX mV 77 dB Low 5 17 High 150 190 µA † All characteristics are measured under open-loop conditions with zero common-mode input voltage unless otherwise specified. Unless otherwise noted, an output load resistor is connected from the output to ground and has the following values: for low bias, RL = 1 MΩ, for medium bias, RL = 100 kΩ, and for high bias, RL = 10 kΩ. ‡ Full range is 0°C to 70°C. § The output swings to the potential of VDD – /GND. operating characteristics, VDD = 1.4 V, TA = 25°C PARAMETER TEST CONDITIONS BIAS TLC251C, TLC251AC, TLC251BC MIN B1 Unity gain bandwidth Unity-gain CL = 100 pF SR Slew rate at unity gain See Figure 1 Overshoot factor See Figure 1 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TYP Low 12 High 12 Low 0.001 High 0.1 Low 35% High 30% UNIT MAX kHz V/µs 11 TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 electrical characteristics, VDD = 5 V, TA = 25°C TLC251Y PARAMETER TEST CONDITIONS HIGH-BIAS MODE MIN VO = 1.4 V, VIC = 0 V, RS = 50 Ω, MEDIUM-BIAS MODE TYP MAX 1.1 10 MIN LOW-BIAS MODE TYP MAX 1.1 10 MIN UNIT TYP MAX 1.1 10 VIO Input offset voltage mV αVIO Average temperature coefficient of input offset voltage IIO Input offset current (see Note 4) VO = VDD/2, VIC = VDD/2 0.1 60 0.1 60 0.1 60 pA IIB Input bias current (see Note 4) VO = VDD/2, VIC = VDD/2 0.6 60 0.6 60 0.6 60 pA VICR Common-mode input voltage range (see Note 5) VOH High-level output voltage VOL Low-level output voltage VID = 100 mV, RL† VID = – 100 mV, IOL = 0 AVD Large-signal differential voltage amplification VO = 0.25 V, RL† CMRR Common-mode rejection ratio kSVR RL† 1.8 1.7 µV/°C 1.1 – 0.2 to 4 – 0.3 to 4.2 – 0.2 to 4 – 0.3 to 4.2 – 0.2 to 4 – 0.3 to 4.2 V 3.2 3.8 3.2 3.9 3.2 4.1 V 0 50 0 50 0 50 mV 5 23 25 170 50 480 V/mV VIC = VICRmin 65 80 65 91 65 94 dB Supply-voltage rejection ratio (∆VDD /∆VIO) VDD = 5 V to 10 V, VO = 1.4 V 65 95 70 93 70 97 dB II(SEL) Input current (BIAS SELECT) VI(SEL) = VDD/2 0.065 µA IDD Supply current VO = VDD/2, VIC = VDD/2, No load – 1.4 675 – 0.13 1600 105 280 10 † For high-bias mode, RL = 10 kΩ; for medium-bias mode, RL = 100 kΩ; and for low-bias mode, RL = 1 MΩ. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 17 µA TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 operating characteristics, VDD = 5 V, TA = 25°C TLC251Y PARAMETER HIGH-BIAS MODE TEST CONDITIONS MIN TYP MEDIUM-BIAS MODE MAX MIN TYP LOW-BIAS MODE MAX MIN TYP UNIT MAX SR Slew rate at unity gain RL†, CL = 20 pF VI(PP) = 1 V VI(PP) = 2.5 V 3.6 0.43 0.03 2.9 0.40 0.03 Vn Equivalent input noise voltage f = 1 kHz, RS = 20 Ω 25 32 68 nV/√Hz BOM Maximum output swing bandwidth VO = VOH, RL = 10 kΩ CL = 20 pF, 320 55 4.5 kHz B1 Unity-gain bandwidth VI = 10 mV, CL = 20 pF 1700 525 65 kHz φm Phase margin f = B1, CL = 20 pF VI = 10 mV, 46° 40° 34° V/µs † For high-bias mode, RL = 10 kΩ; for medium-bias mode, RL = 100 kΩ; and for low-bias mode, RL = 1 MΩ. PARAMETER MEASUREMENT INFORMATION IN – – IN + + – Output Output Input + BIAS Low Medium High N1 CL = 100 pF RL N2 RL 1 MΩ 100 kΩ 10 kΩ 25 kΩ GND Figure 1. Unity-Gain Amplifier Figure 2. Input Offset Voltage Null Circuit TYPICAL CHARACTERISTICS Table of Graphs FIGURE IDD Supply current AVD Large-signal differential voltage amplification Phase shift vs Bias-select voltage vs Supply voltage vs Free-air temperature 3 4 5 Low bias vs Frequency 6 Medium bias vs Frequency 7 High bias vs Frequency 8 Low bias vs Frequency 6 Medium bias vs Frequency 7 High bias vs Frequency 8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 13 TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS SUPPLY CURRENT vs SUPPLY VOLTAGE SUPPLY CURRENT vs BIAS-SELECT VOLTAGE 10000 10000 VO = VIC = 0.2 VDD No Load TA = 25°C 1000 I DD – Supply Current – µ A I DD – Supply Current – µ A VO = VIC = 0.2 VDD No Load TA = 25°C VDD = 16 V 100 VDD = 4 V VDD = 1.4 V 10 1 0.1 1000 Medium-Bias Versions 100 Low-Bias Versions 10 0 10 1 100 0 2 4 6 8 Figure 4 Figure 3 SUPPLY CURRENT vs FREE-AIR TEMPERATURE 10000 VDD = 10 V VIC = 0 V VO = 2 V No Load High-Bias Versions I DD – Supply Current – µ A 10 1000 Medium-Bias Versions 100 Low-Bias Versions 10 0 0 12 14 VDD – Supply Voltage – V VB – Bias-Select Voltage – V 10 20 30 40 50 60 TA – Free-Air Temperature – °C Figure 5 14 High-Bias Versions POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 70 80 16 18 20 TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS LOW-BIAS LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY VDD = 10 V RL = 1 MΩ TA = 25°C 106 105 0° 30° AVD (left scale) 104 60° 103 90° Phase Shift (right scale) 102 120° 101 150° 1 180° Phase Shift A VD – Differential Voltage Amplification 107 0.1 0.1 1 10 100 1k 10 k 100 k Frequency – Hz Figure 6 MEDIUM-BIAS LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY VDD = 10 V RL = 100 kΩ TA = 25°C 106 105 0° 30° AVD (left scale) 104 60° 103 90° Phase Shift (right scale) 102 120° 101 150° 1 180° Phase Shift A VD – Differential Voltage Amplification 107 0.1 1 10 100 1k 10 k 100 k 1M Frequency – Hz Figure 7 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 15 TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS HIGH-BIAS LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY VDD = 10 V RL = 10 kΩ TA = 25°C 106 105 0° 30° 104 60° Phase Shift (right scale) 103 90° 102 120° Phase Shift A VD – Differential Voltage Amplification 107 AVD (left scale) 101 150° 1 180° 0.1 10 100 1k 10 k 100 k 1M 10 M Frequency – Hz Figure 8 APPLICATION INFORMATION latch-up avoidance Junction-isolated CMOS circuits have an inherent parasitic PNPN structure that can function as an SCR. Under certain conditions, this SCR may be triggered into a low-impedance state, resulting in excessive supply current. To avoid such conditions, no voltage greater than 0.3 V beyond the supply rails should be applied to any pin. In general, the operational amplifier supplies should be applied simultaneously with, or before, application of any input signals. 16 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 APPLICATION INFORMATION using BIAS SELECT The TLC251 has a terminal called BIAS SELECT that allows the selection of one of three IDD conditions (10, 150, and 1000 µA typical). This allows the user to trade-off power and ac performance. As shown in the typical supply current (IDD) versus supply voltage (VDD) curves (Figure 4), the IDD varies only slightly from 4 V to 16 V. Below 4 V, the IDD varies more significantly. Note that the IDD values in the medium- and low-bias modes at VDD = 1.4 V are typically 2 µA, and in the high mode are typically 12 µA. The following table shows the recommended BIAS SELECT connections at VDD = 10 V. BIAS MODE AC PERFORMANCE BIAS SELECT CONNECTION† TYPICAL IDD‡ Low Medium High Low Medium High VDD 0.8 V to 9.2 V Ground pin 10 µA 150 µA 1000 µA † Bias selection may also be controlled by external circuitry to conserve power, etc. For information regarding BIAS SELECT, see Figure 3 in the typical characteristics curves. ‡ For IDD characteristics at voltages other than 10 V, see Figure 4 in the typical characteristics curves. output stage considerations The amplifier’s output stage consists of a source-follower-connected pullup transistor and an open-drain pulldown transistor. The high-level output voltage (VOH) is virtually independent of the IDD selection and increases with higher values of VDD and reduced output loading. The low-level output voltage (VOL) decreases with reduced output current and higher input common-mode voltage. With no load, VOL is essentially equal to the potential of VDD – /GND. input offset nulling The TLC251C series offers external offset null control. Nulling may be achieved by adjusting a 25-kΩ potentiometer connected between the offset null terminals with the wiper connected to the device VDD – /GND pin as shown in Figure 2. The amount of nulling range varies with the bias selection. At an IDD setting of 1000 µA (high bias), the nulling range allows the maximum offset specified to be trimmed to zero. In low or medium bias or when the amplifier is used below 4 V, total nulling may not be possible for all units. supply configurations Even though the TLC251C series is characterized for single-supply operation, it can be used effectively in a split-supply configuration when the input common-mode voltage (VICR), output swing (VOL and VOH), and supply voltage limits are not exceeded. circuit layout precautions The user is cautioned that whenever extremely high circuit impedances are used, care must be exercised in layout, construction, board cleanliness, and supply filtering to avoid hum and noise pickup, as well as excessive dc leakages. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 17 PACKAGE OPTION ADDENDUM www.ti.com 19-Apr-2005 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty TLC251ACD ACTIVE SOIC D 8 TLC251ACDR ACTIVE SOIC D 8 TLC251ACP ACTIVE PDIP P 8 50 TLC251ACPE4 ACTIVE PDIP P 8 TLC251BCP ACTIVE PDIP P TLC251BCPE4 ACTIVE PDIP TLC251CD ACTIVE TLC251CDR 75 Lead/Ball Finish MSL Peak Temp (3) Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Pb-Free (RoHS) CU NIPDAU Level-NC-NC-NC 50 Pb-Free (RoHS) CU NIPDAU Level-NC-NC-NC 8 50 Pb-Free (RoHS) CU NIPDAU Level-NC-NC-NC P 8 50 Pb-Free (RoHS) CU NIPDAU Level-NC-NC-NC SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC251CP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU Level-NC-NC-NC TLC251CPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU Level-NC-NC-NC TLC251CPSR ACTIVE SO PS 8 2000 Pb-Free (RoHS) CU NIPDAU Level-2-260C-1YEAR/ Level-1-220C-UNLIM TLC251CPW ACTIVE TSSOP PW 8 150 TBD CU NIPDAU Level-1-220C-UNLIM TLC251CPWR ACTIVE TSSOP PW 8 2000 TBD CU NIPDAU Level-1-220C-UNLIM (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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