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TLV379, TLV2379, TLV4379
SBOS785B – APRIL 2016 – REVISED AUGUST 2017
TLVx379
Cost-Optimized, Low-Voltage, 4-µA, Rail-to-Rail I/O Operational Amplifiers
1 Features
3 Description
•
•
•
•
•
•
•
The TLV379 family of single, dual, and quad
operational amplifiers represents a cost-optimized
generation of low-voltage and micropower amplifiers.
Operating on a supply voltage as low as 1.8 V
(±0.9 V) and consuming extremely low quiescent
current of 4 µA per channel, these amplifiers are wellsuited for power-sensitive applications. In addition,
the rail-to-rail input and output capability allows the
TLV379 family to be used in virtually any singlesupply application.
1
Cost-Optimized Precision Amplifiers
microPower: 4 μA (Typical)
Low Offset Voltage: 0.8 mV (Typical)
Rail-to-Rail Input and Output
Unity-Gain Stable
Wide Supply Voltage Range: 1.8 V to 5.5 V
microSize Packages:
– 5-Pin SC70
– 5-Pin SOT-23
– 8-Pin SOIC
– 14-Pin TSSOP
The TLV379 (single) is available in 5-pin SC70 and
SOT23, and 8-pin SOIC packages. The TLV2379
(dual) comes in an 8-pin SOIC package. The
TLV4379 (quad) is offered in a 14-pin TSSOP
package. All versions are specified from –40°C to
+125°C.
2 Applications
•
•
•
•
•
•
•
Power Banks
Solar Inverters
Low-Power Motor Controls
Battery-Powered Instruments
Portable Devices
Medical Instruments
Handheld Test Equipment
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
SC70 (5)
2.00 mm × 1.25 mm
SOT-23 (5)
2.90 mm × 1.60 mm
SOIC (8)
4.90 mm × 3.91 mm
TLV2379
SOIC (8)
4.90 mm × 3.91 mm
TLV4379
TSSOP (14)
5.00 mm × 4.40 mm
TLV379
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
TLV379 in a Battery-Monitoring Application
RF
R1
+IN
+
IBIAS
VBATT
TLV379
RBIAS
-IN
OUT
VSTATUS
VREF
R2
REF1112
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TLV379, TLV2379, TLV4379
SBOS785B – APRIL 2016 – REVISED AUGUST 2017
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
6
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
6
6
6
7
7
7
8
9
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information: TLV379 ...................................
Thermal Information: TLV2379 .................................
Thermal Information: TLV4379 .................................
Electrical Characteristics: VS = 1.8 V to 5.5 V ..........
Typical Characteristics ..............................................
Detailed Description ............................................ 12
8.1 Overview ................................................................. 12
8.2 Functional Block Diagram ....................................... 12
8.3 Feature Description................................................. 12
8.4 Device Functional Modes........................................ 13
9
Application and Implementation ........................ 14
9.1 Application Information............................................ 14
9.2 Typical Application ................................................. 14
9.3 System Examples ................................................... 15
10 Power Supply Recommendations ..................... 17
10.1 Input and ESD Protection ..................................... 17
11 Layout................................................................... 18
11.1 Layout Guidelines ................................................. 18
11.2 Layout Example .................................................... 18
12 Device and Documentation Support ................. 19
12.1
12.2
12.3
12.4
12.5
12.6
12.7
Documentation Support .......................................
Related Links ........................................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
19
19
19
19
19
19
19
13 Mechanical, Packaging, and Orderable
Information ........................................................... 20
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (September 2016) to Revision B
•
Page
Added underscores to pin names in Pin Functions tables to match connection diagrams ................................................... 4
Changes from Original (April 2016) to Revision A
•
2
Page
Changed DBV pinout ............................................................................................................................................................. 3
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SBOS785B – APRIL 2016 – REVISED AUGUST 2017
5 Device Comparison Table
FEATURES
PRODUCT
1 μA, 70 kHz, 2-mV VOS, 1.8-V to 5.5-V supply
OPAx349
1 μA, 5.5 kHz, 390-μV VOS, 2.5-V to 16-V supply
TLV240x
1 μA, 5.5 kHz, 0.6-mV VOS, 2.5-V to 12-V supply
TLV224x
7 μA, 160 kHz, 0.5-mV VOS, 2.7-V to 16-V supply
TLV27Lx
7 μA, 160 kHz, 0.5-mV VOS, 2.7-V to 16-V supply
TLV238x
20 μA, 350 kHz, 2-mV VOS, 2.3-V to 5.5-V supply
OPAx347
20 μA, 500 kHz, 550-μV VOS, 1.8-V to 3.6-V supply
TLV276x
45 μA, 1 MHz, 1-mV VOS, 2.1-V to 5.5-V supply
OPAx348
6 Pin Configuration and Functions
TLV379: DCK Package
5-Pin SC70
Top View
+IN
1
V±
2
±IN
3
TLV379: DBV Package
5-Pin SOT23
Top View
5
V+
4
OUT
OUT
1
V±
2
+IN
3
Not to scale
5
V+
4
±IN
Not to scale
TLV379: D Package
8-Pin SOIC
Top View
NC
1
8
NC
±IN
2
7
V+
+IN
3
6
OUT
V±
4
5
NC
Not to scale
Pin Functions: TLV379
NAME
NO.
I/O
DESCRIPTION
DCK
DBV
D
–IN
3
4
2
I
Negative (inverting) input
+IN
1
3
3
I
Positive (noninverting) input
NC
—
—
1, 5, 8
—
No internal connection (can be left floating)
OUT
4
1
6
O
Output
V–
2
2
4
—
Negative (lowest) power supply
V+
5
5
7
—
Positive (highest) power supply
Copyright © 2016–2017, Texas Instruments Incorporated
Product Folder Links: TLV379 TLV2379 TLV4379
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TLV2379: D Package
8-Pin SOIC
Top View
OUT_A
1
8
V+
±IN_A
2
7
OUT_B
+IN_A
3
6
±IN_B
V±
4
5
+IN_B
Not to scale
Pin Functions: TLV2379
NAME
NO.
I/O
–IN_A
2
I
Inverting input, channel A
+IN_A
3
I
Noninverting input, channel A
–IN_B
6
I
Inverting input, channel B
+IN_B
5
I
Noninverting input, channel B
OUT_A
1
O
Output, channel A
OUT_B
7
O
Output, channel B
V–
4
—
Negative (lowest) power supply
V+
8
—
Positive (highest) power supply
4
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DESCRIPTION
Copyright © 2016–2017, Texas Instruments Incorporated
Product Folder Links: TLV379 TLV2379 TLV4379
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SBOS785B – APRIL 2016 – REVISED AUGUST 2017
TLV4379: PW Package
14-Pin TSSOP
Top View
OUT_A
1
14
OUT_D
±IN_A
2
13
±IN_D
+IN_A
3
12
+IN_D
V+
4
11
V±
+IN_B
5
10
+IN_C
±IN_B
6
9
±IN_C
OUT_B
7
8
OUT_C
Not to scale
Pin Functions: TLV4379
NAME
NO.
I/O
DESCRIPTION
–IN_A
2
I
Inverting input, channel A
+IN_A
3
I
Noninverting input, channel A
–IN_B
6
I
Inverting input, channel B
+IN_B
5
I
Noninverting input, channel B
–IN_C
9
I
Inverting input, channel C
+IN_C
10
I
Noninverting input, channel C
–IN_D
13
I
Inverting input, channel D
+IN_D
12
I
Noninverting input, channel D
OUT_A
1
O
Output, channel A
OUT_B
7
O
Output, channel B
OUT_C
8
O
Output, channel C
OUT_D
14
O
Output, channel D
V–
11
—
Negative (lowest) power supply
V+
4
—
Positive (highest) power supply
Copyright © 2016–2017, Texas Instruments Incorporated
Product Folder Links: TLV379 TLV2379 TLV4379
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SBOS785B – APRIL 2016 – REVISED AUGUST 2017
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
Voltage
(V–) – 0.5
±10
Output short-circuit (3)
–40
125
Junction, TJ
150
Storage, Tstg
(3)
mA
Continuous
Operating, TA
(2)
V
(V+) + 0.5
Signal input pin (2)
Temperature
UNIT
7
Signal input pin (2)
Current
(1)
MAX
Supply, VS = (V+) – (V–)
–65
°C
150
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Input pins are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5 V beyond the supply rails must be
current-limited to 10 mA or less.
Short-circuit to ground, one amplifier per package.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VS
Supply voltage
TA
Operating temperature
6
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Single supply
Dual supply
NOM
MAX
1.8
5.5
±0.9
±2.75
–40
125
UNIT
V
°C
Copyright © 2016–2017, Texas Instruments Incorporated
Product Folder Links: TLV379 TLV2379 TLV4379
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SBOS785B – APRIL 2016 – REVISED AUGUST 2017
7.4 Thermal Information: TLV379
TLV379
THERMAL METRIC (1)
DCK (SC70)
DBV (SOT23)
D (SOIC)
5 PINS
5 PINS
8 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
262.2
220.8
130.8
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
99.7
148.3
77.2
°C/W
RθJB
Junction-to-board thermal resistance
49.0
48.2
71.1
°C/W
ψJT
Junction-to-top characterization parameter
3.3
28.6
30.7
°C/W
ψJB
Junction-to-board characterization parameter
18.2
47.3
70.6
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
n/a
n/a
n/a
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.5 Thermal Information: TLV2379
TLV2379
THERMAL METRIC
(1)
D (SOIC)
UNIT
8 PINS
RθJA
Junction-to-ambient thermal resistance
116.4
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
59.5
°C/W
RθJB
Junction-to-board thermal resistance
57.6
°C/W
ψJT
Junction-to-top characterization parameter
17.2
°C/W
ψJB
Junction-to-board characterization parameter
57.0
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
n/a
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.6 Thermal Information: TLV4379
TLV4379
THERMAL METRIC
(1)
PW (TSSOP)
UNIT
14 PINS
RθJA
Junction-to-ambient thermal resistance
110.8
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
35.2
°C/W
RθJB
Junction-to-board thermal resistance
53.6
°C/W
ψJT
Junction-to-top characterization parameter
2.6
°C/W
ψJB
Junction-to-board characterization parameter
52.9
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
n/a
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
Copyright © 2016–2017, Texas Instruments Incorporated
Product Folder Links: TLV379 TLV2379 TLV4379
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7.7 Electrical Characteristics: VS = 1.8 V to 5.5 V
at TA = 25°C, RL = 25 kΩ connected to VS / 2, and VCM < (V+) – 1 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
0.8
2.5
UNIT
OFFSET VOLTAGE
VOS
Input offset voltage
VS = 5 V
dVOS/dT
VOS drift
TA = –40°C to +125°C
PSRR
Power-supply rejection ratio
3
92
mV
μV/°C
104
dB
INPUT VOLTAGE RANGE
VCM
Common-mode voltage range
Common-mode rejection ratio (1)
CMRR
(V–) – 0.1
(V–) < VCM < (V+) – 1 V
85
TA = –40°C to +125°C,
(V–) < VCM < (V+) – 1 V
62
(V+) + 0.1
V
100
dB
INPUT BIAS CURRENT
IIB
Input bias current
VS = 5 V, VCM ≤ VS / 2
±5
pA
IIO
Input offset current
VS = 5 V
±5
pA
INPUT IMPEDANCE
Differential
1013 || 3
Ω || pF
Common-mode
1013 || 6
Ω || pF
NOISE
en
Input voltage noise
f = 0.1 Hz to 10 Hz
2.8
μVPP
Input voltage noise density
f = 1 kHz
83
nV/√Hz
110
dB
OPEN-LOOP GAIN
AOL
Open-loop voltage gain
VS = 5 V, RL = 5 kΩ,
500 mV < VO < (V+) – 500 mV
90
OUTPUT
Voltage output swing from rail
RL = 5 kΩ
25
TA = –40°C to +125°C, RL = 5 kΩ
50
75
±5
mV
ISC
Short-circuit current
CLOAD
Capacitive load drive
mA
ROUT
Closed-loop output impedance
G = 1, f = 1 kHz, IO = 0
10
Ω
RO
Open-loop output impedance
f = 100 kHz, IO = 0
28
kΩ
See Capacitive Load and Stability section
FREQUENCY RESPONSE (CLOAD = 30 pF)
GBW
Gain bandwidth product
SR
Slew rate
G=1
Overload recovery time
VIN × Gain > VS
tON
Turn-on time
90
kHz
0.03
V/μs
25
μs
1
ms
POWER SUPPLY
VS
Specified, operating voltage range
IQ
Quiescent current per amplifier
1.8
VS = 5 V, TA = –40°C to +125°C
4
5.5
V
12
μA
TEMPERATURE
TA
Specified, operating range
–40
125
°C
Tstg
Storage range
–65
150
°C
(1)
8
See typical characteristic graph, Common-Mode Rejection Ratio vs Frequency (Figure 2).
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7.8 Typical Characteristics
0
120
100
-30
100
80
-60
60
-90
40
-120
20
-150
20
-180
100k
0
0
0.1
1
10
100
1k
10k
CMRR and PSRR (dB)
120
Phase (°)
Gain (dB)
at TA = 25°C, VS = 5 V, and RL = 25 kΩ connected to VS / 2 (unless otherwise noted)
-PSRR
80
+PSRR
60
40
CMRR
0.1
1
10
Frequency (Hz)
Figure 1. Open-Loop Gain and Phase vs Frequency
10k
100k
Figure 2. Common-Mode and Power-Supply Rejection Ratio
vs Frequency
5
2.5
4.5
2
4
1.5
3.5
1
3
0.5
VOUT (V)
Output Voltage (VPP)
100
1k
Frequency (Hz)
2.5
2
-1
1
-1.5
0.5
-2
0
-2.5
10k
85°C
25°C
-40°C
-0.5
1.5
1k
125°C
0
100k
0
1
2
Frequency (Hz)
3
4
5
6
7
8
9
10
IOUT (mA)
VS = ±2.5 V
Figure 3. Maximum Output Voltage vs Frequency
Figure 4. Output Voltage vs Output Current
25
Population
Short-Circuit Current (mA)
ISC
20
-ISC
15
10
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Supply Voltage (V)
-1500
-1350
-1200
-1050
-900
-750
-600
-450
-300
-150
0
150
300
450
600
750
900
1050
1200
1350
1500
5
Offset Voltage (mV)
Figure 5. Short-Circuit Current vs Supply Voltage
Figure 6. Offset Voltage Production Distribution
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Typical Characteristics (continued)
at TA = 25°C, VS = 5 V, and RL = 25 kΩ connected to VS / 2 (unless otherwise noted)
15
Common-Mode Input Range
7.5
1000
Input Bias Current (pA)
10
Offset Voltage (mV)
10000
Unit 1
12.5
CMRR Specified Range
5
2.5
0
-2.5
-5
-7.5
-40°C
85°C
125°C
-10
-12.5
-15
-0.5 0
0.5
1
100
10
1
0.1
Unit 2
1.5
2
2.5
3
3.5
4
4.5
5
0.01
-50
5.5
0
-25
Common-Mode Voltage (V)
25
50
Temperature (°C)
75
100
125
Figure 8. Input Bias Current vs Temperature
Figure 7. Offset Voltage vs Common-Mode Voltage
and Temperature
1mV/div
Noise (nV/ÖHz)
1000
100
10
1
2.5s/div
10
100
1k
10k
Frequency (Hz)
Figure 10. Noise vs Frequency
Figure 9. 0.1-Hz to 10-Hz Noise
60
40
20mV/div
Overshoot (%)
50
30
G = +1
20
10
G = -1
0
10
100
25ms/div
1000
Capacitive Load (pF)
Figure 11. Small-Signal Overshoot vs Capacitive Load
10
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Figure 12. Small-Signal Step Response
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Typical Characteristics (continued)
500mV/div
at TA = 25°C, VS = 5 V, and RL = 25 kΩ connected to VS / 2 (unless otherwise noted)
50ms/div
Figure 13. Large-Signal Step Response
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8 Detailed Description
8.1 Overview
The TLV379 devices are a family of micropower, low-voltage, rail-to-rail input and output operational amplifiers
designed for battery-powered applications. This family of amplifiers features impressive bandwidth (90 kHz), low
bias current (5 pA), low noise (83 nV/√Hz), and consumes very low quiescent current of only 12 µA (maximum)
per channel.
8.2 Functional Block Diagram
V+
Reference
Current
VIN+
VINVBIAS1
Class AB
Control
Circuitry
VO
VBIAS2
V(Ground)
Copyright © 2016, Texas Instruments Incorporated
8.3 Feature Description
8.3.1 Operating Voltage
The TLV379 series is fully specified and tested from 1.8 V to 5.5 V (±0.9 V to ±2.75 V). Parameters that vary with
supply voltage are illustrated in the Typical Characteristics section.
8.3.2 Rail-to-Rail Input
The input common-mode voltage range of the TLV379 family typically extends 100 mV beyond each supply rail.
This rail-to-rail input is achieved using a complementary input stage. CMRR is specified from the negative rail to
1 V below the positive rail. Between (V+) – 1 V and (V+) + 0.1 V, the amplifier operates with higher offset voltage
because of the transition region of the input stage. See the typical characteristic graph, Offset Voltage vs
Common-Mode Voltage vs Temperature (Figure 7).
12
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Feature Description (continued)
8.3.3 Rail-to-Rail Output
Designed as a micropower, low-noise operational amplifier, the TLV379 delivers a robust output drive capability.
A class AB output stage with common-source transistors is used to achieve full rail-to-rail output swing capability.
For resistive loads up to 25 kΩ, the output typically swings to within 5 mV of either supply rail, regardless of the
power-supply voltage applied.
8.3.4 Capacitive Load and Stability
Follower configurations with load capacitance in excess of 30 pF can produce extra overshoot (see the typical
characteristic graph, Small-Signal Overshoot vs Capacitive Load, Figure 11) and ringing in the output signal.
Increasing the gain enhances the ability of the amplifier to drive greater capacitive loads. In unity-gain
configurations, capacitive load drive can be improved by inserting a small (10 Ω to 20 Ω) resistor, RS, in series
with the output as shown in Figure 14. This resistor significantly reduces ringing and maintains direct current (dc)
performance for purely capacitive loads. However, if a resistive load is in parallel with the capacitive load, a
voltage divider is created, introducing a dc error at the output and slightly reducing the output swing. The error
introduced is proportional to the ratio of RS / RL and is generally negligible.
VS
RS
VOUT
TLV379
10 W to
20 W
VIN
RL
CL
Figure 14. Series Resistor in Unity-Gain Buffer Configuration Improves Capacitive Load Drive
In unity-gain inverter configuration, phase margin can be reduced by the reaction between the capacitance at the
operational amplifier (op amp) input and the gain-setting resistors. Best performance is achieved by using
smaller-value resistors. However, when large-value resistors cannot be avoided, a small (4 pF to 6 pF) capacitor
(CFB) can be inserted in the feedback, as shown in Figure 15. This configuration significantly reduces overshoot
by compensating the effect of capacitance (CIN) that includes the amplifier input capacitance (3 pF) and printed
circuit board (PCB) parasitic capacitance.
CFB
RF
RIN
VIN
TLV379
VOUT
CIN
Figure 15. Improving Stability for Large RF and RIN
8.4 Device Functional Modes
The TLV379 family has a single functional mode. These devices are powered on as long as the power-supply
voltage is between 1.8 V (±0.9 V) and 5.5 V (±2.75 V).
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
When designing for ultra-low power, choose system components carefully. To minimize current consumption,
select large-value resistors. Any resistors can react with stray capacitance in the circuit and the input capacitance
of the operational amplifier. These parasitic RC combinations can affect the stability of the overall system. Use of
a feedback capacitor assures stability and limits overshoot or gain peaking.
9.2 Typical Application
A typical application for an operational amplifier is an inverting amplifier, as shown in Figure 16. An inverting
amplifier takes a positive voltage on the input and outputs a signal inverted to the input, making a negative
voltage of the same magnitude. In the same manner, the amplifier also makes negative input voltages positive on
the output. In addition, amplification can be added by selecting the input resistor RI and the feedback resistor RF.
RF
VSUP+
RI
VOUT
+
VIN
VSUP±
Copyright © 2016, Texas Instruments Incorporated
Figure 16. Application Schematic
9.2.1 Design Requirements
The supply voltage must be chosen to be larger than the input voltage range and the desired output range. The
limits of the input common-mode range (VCM) and the output voltage swing to the rails (VO) must also be
considered. For instance, this application scales a signal of ±0.5 V (1 V) to ±1.8 V (3.6 V). Setting the supply at
±2.5 V is sufficient to accommodate this application.
9.2.2 Detailed Design Procedure
Determine the gain required by the inverting amplifier using Equation 1 and Equation 2:
VOUT
AV
VIN
AV
14
1.8
0.5
3.6
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(1)
(2)
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Typical Application (continued)
When the desired gain is determined, choose a value for RI or RF. Choosing a value in the kilohm range is
desirable for general-purpose applications because the amplifier circuit uses currents in the milliamp range. This
milliamp current range ensures the device does not draw too much current. The trade-off is that very large
resistors (100s of kilohms) draw the smallest current but generate the highest noise. Very small resistors (100s of
ohms) generate low noise but draw high current. This example uses 10 kΩ for RI, meaning 36 kΩ is used for RF.
These values are determined by Equation 3:
RF
AV
RI
(3)
9.2.3 Application Curve
2
1.5
Input
Output
Voltage (V)
1
0.5
0
-0.5
-1
-1.5
-2
Time
Figure 17. Inverting Amplifier Input and Output
9.3 System Examples
Figure 18 shows the basic configuration for a bridge amplifier using the TLV379.
VEX
R1
VS
R R
R R
TLV379
VOUT
R1
VREF
Figure 18. Single Op Amp Bridge Amplifier
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System Examples (continued)
Figure 19 shows the TLV2379 used as a window comparator. The threshold limits are set by VH and VL, with VH
> VL. When VIN < VH, the output of A1 is low. When VIN > VL, the output of A2 is low. Therefore, both op amp
outputs are at 0 V as long as VIN is between VH and VL. This architecture results in no current flowing through
either diode, Q1 in cutoff, with the base voltage at 0 V, and VOUT forced high.
If VIN falls below VL, the output of A2 is high, current flows through D2, and VOUT is low. Likewise, if VIN rises
above VH, the output of A1 is high, current flows through D1, and VOUT is low.
The window comparator threshold voltages are set using Equation 4 and Equation 5.
R2
VH =
´ VS
R1 + R2
VL =
R4
R3 + R4
(4)
´ VS
(5)
VS
VS
R1
VH
A1
1/2
TLV2379
R2
D1
(2)
VS
R7
5.1 kW
RIN
VOUT
R5
10 kW
(1)
2 kW
VIN
Q1
R6
5.1 kW
VS
VS
A2
R3
VL
(3)
1/2
TLV2379
D2
(2)
R4
(1)
RIN protects A1 and A2 from possible excess current flow.
(2)
IN4446 or equivalent diodes.
(3)
2N2222 or equivalent NPN transistor.
Figure 19. TLV2379 as a Window Comparator
16
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10 Power Supply Recommendations
The TLV379 family is specified for operation from 1.8 V to 5.5 V (±0.9 V to ±2.75 V); many specifications apply
from –40°C to +125°C. The Typical Characteristics section presents parameters that can exhibit significant
variance with regard to operating voltage or temperature.
CAUTION
Supply voltages larger than 7 V can permanently damage the device (see the Absolute
Maximum Ratings table).
Place 0.1-μF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or highimpedance power supplies. For more detailed information on bypass capacitor placement; see the Layout
Guidelines section.
10.1 Input and ESD Protection
The TLV379 family incorporates internal electrostatic discharge (ESD) protection circuits on all pins. In the case
of input and output pins, this protection primarily consists of current-steering diodes connected between the input
and power-supply pins. These ESD protection diodes also provide in-circuit, input overdrive protection, as long
as the current is limited to 10 mA as stated in the Absolute Maximum Ratings table. Figure 20 shows how a
series input resistor can be added to the driven input to limit the input current. The added resistor contributes
thermal noise at the amplifier input that must be kept to a minimum in noise-sensitive applications.
V+
IOVERLOAD
10-mA max
Device
VOUT
VIN
5 kW
Figure 20. Input Current Protection
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11 Layout
11.1 Layout Guidelines
For best operational performance of the device, use good printed circuit board (PCB) layout practices, including:
• Noise can propagate into analog circuitry through the power pins of the circuit as a whole and the
operational amplifier. Use bypass capacitors to reduce the coupled noise by providing low-impedance
power sources local to the analog circuitry.
– Connect low-ESR, 0.1-µF ceramic bypass capacitors between each supply pin and ground, placed as
close as possible to the device. A single bypass capacitor from V+ to ground is applicable for singlesupply applications.
• Separate grounding for analog and digital portions of the circuitry is one of the simplest and most
effective methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to
ground planes. A ground plane helps distribute heat and reduces EMI noise pickup. Make sure to
physically separate digital and analog grounds, paying attention to the flow of the ground current. For
more detailed information, see Circuit Board Layout Techniques, SLOA089.
• To reduce parasitic coupling, run the input traces as far away from the supply or output traces as
possible. If these traces cannot be kept separate, crossing the sensitive trace perpendicularly is much
better than crossing in parallel with the noisy trace.
• Place the external components as close as possible to the device. Keep RF and RG close to the inverting
input in order to minimize parasitic capacitance, as shown in Figure 21.
• Keep the length of input traces as short as possible. Always remember that the input traces are the most
sensitive part of the circuit.
• Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly
reduce leakage currents from nearby traces that are at different potentials.
11.2 Layout Example
Place components
Run the input traces close to the device and
to each other to reduce
as far away from
parasitic errors.
the supply lines
as possible.
VS+
RF
N/C
N/C
GND
±IN
V+
VIN
+IN
OUTPUT
V±
N/C
RG
Use a low-ESR,
ceramic bypass
capacitor.
GND
GND
Use a low-ESR, ceramic
bypass capacitor.
VOUT
VS±
Ground (GND) plane on another layer.
Figure 21. Operational Amplifier Board Layout for Noninverting Configuration
+
VIN
VOUT
RG
RF
Figure 22. Schematic Representation of Figure 21
18
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SBOS785B – APRIL 2016 – REVISED AUGUST 2017
12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation, see the following:
• EMI Rejection Ratio of Operational Amplifiers (SBOA128)
• Circuit Board Layout Techniques (SLOA089)
• QFN/SON PCB Attachment (SLUA271)
• Quad Flatpack No-Lead Logic Packages (SCBA017)
12.2 Related Links
Table 1 lists quick access links. Categories include technical documents, support and community resources,
tools and software, and quick access to sample or buy.
Table 1. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
TLV379
Click here
Click here
Click here
Click here
Click here
TLV2379
Click here
Click here
Click here
Click here
Click here
TLV4379
Click here
Click here
Click here
Click here
Click here
12.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.4 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.5 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
20
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TLV2379IDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
V2379
TLV379IDBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
12N
TLV379IDBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
12N
TLV379IDCKR
ACTIVE
SC70
DCK
5
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
12O
TLV379IDCKT
ACTIVE
SC70
DCK
5
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
12O
TLV379IDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
TLV
379
TLV4379IPWR
ACTIVE
TSSOP
PW
14
2000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
TLV4379
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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