SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006
D
D
D
D
D
D
D
D
Operational Amplifier
High Output Drive . . . >300 mA
Rail-To-Rail Output
Unity-Gain Bandwidth . . . 2.7 MHz
Slew Rate . . . 1.5 V/µs
Supply Current . . . 700 µA/Per Channel
Supply Voltage Range . . . 2.5 V to 6 V
Specified Temperature Range:
− TA = 0°C to 70°C . . . Commercial Grade
− TA = −40°C to 125°C . . . Industrial Grade
Universal OpAmp EVM
+
−
TLV4112
D, DGN, OR P PACKAGE
(TOP VIEW)
1OUT
1IN −
1IN +
GND
description
1
8
2
7
3
6
4
5
VDD
2OUT
2IN −
2IN+
The TLV411x single supply operational amplifiers provide output currents in excess of 300 mA at 5 V. This
enables standard pin-out amplifiers to be used as high current buffers or in coil driver applications. The TLV4110
and TLV4113 come with a shutdown feature.
The TLV411x is available in the ultra small MSOP PowerPAD package, which offers the exceptional thermal
impedance required for amplifiers delivering high current levels.
All TLV411x devices are offered in PDIP, SOIC (single and dual) and MSOP PowerPAD (dual).
FAMILY PACKAGE TABLE
PACKAGE TYPES
NUMBER OF
CHANNELS
MSOP
PDIP
SOIC
TLV4110
1
8
8
8
Yes
TLV4111
1
8
8
8
—
TLV4112
2
8
8
8
—
TLV4113
2
10
14
14
Yes
DEVICE
SHUTDOWN
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
Refer to the EVM
Selection Guide
(Lit# SLOU060)
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
3.0
1.0
2.9
VOL − Low-Level Output Voltage − V
V OH − High-Level Output Voltage − V
UNIVERSAL
EVM BOARD
VDD = 3 V
2.8
2.7
TA = 125°C
TA = −40°C
2.6
2.5
TA = 0°C
2.4
TA = 25°C
2.3
TA = 70°C
2.2
2.1
2.0
0
50
100
150
200
250
300
IOH − High-Level Output Current − mA
VDD = 3 V
0.9
0.8
TA = 70°C
0.7
TA = 25°C
TA = 0°C
TA = −40°C
TA = 125°C
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
50
100
150
200
250
300
IOL − Low-Level Output Current − mA
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments. All other trademarks are the property of their respective owners.
Copyright 1999−2006, Texas Instruments Incorporated
!"# $ %& ' # "$ (&)*%"# +"#',
+&%#$ % ! # $('% %"# $ (' #-' #' !$ '."$
$# &!' #$
$#" +" + /" " #0, +&%# ( %'$$ 1 + '$ # '%'$$" *0 %*&+'
#'$# 1 "** (" "!'#' $,
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006
TLV4110 AND TLV4111 AVAILABLE OPTIONS
PACKAGED DEVICES
MSOP
TA
SMALL OUTLINE
(D)†‡
0°C to 70°C
−40°C to 125°C
SMALL OUTLINE
(DGN)†
SYMBOL
PLASTIC DIP
(P)
TLV4110CD
TLV4110CDGN
xxTIAHL
TLV4110CP
TLV4111CD
TLV4111CDGN
xxTIAHN
TLV4111CP
TLV4110ID
TLV4110IDGN
xxTIAHM
TLV4110IP
TLV4111ID
TLV4111IDGN
xxTIAHO
TLV4111IP
† This package is available taped and reeled. To order this packaging option, add an R suffix to the part
number (e.g., TLV4110CDR).
‡ In the SOIC package, the maximum RMS output power is thermally limited to 350 mW; 700 mW peaks
can be driven, as long as the RMS value is less than 350 mW.
TLV4112 AND TLV4113 AVAILABLE OPTIONS
PACKAGED DEVICES
MSOP
TA
SMALL OUTLINE
(D)†‡
TLV4112CD
0°C to 70°C
PLASTIC DIP
(P)
SMALL OUTLINE
(DGN)†
SYMBOL
SMALL OUTLINE
(DGQ)†
SYMBOL
TLV4112DGN
xxTIAHP
—
—
TLV4112CP
TLV4113CD
—
—
TLV4113CDGQ
xxTIAHR
TLV4113CN
TLV4112ID
TLV4112IDGN
xxTIAHQ
—
—
TLV4112IP
−40°C to 125°C
TLV4113ID
—
—
TLV4113IDGQ
xxTIAHS
TLV4113IN
† This package is available taped and reeled. To order this packaging option, add an R suffix to the part number (e.g., TLV4112CDR).
‡ In the SOIC package, the maximum RMS output power is thermally limited to 350 mW; 700 mW peaks can be driven, as long as the RMS value
is less than 350 mW.
TLV411x PACKAGE PIN OUTS
TLV4110
D, DGN OR P PACKAGE
(TOP VIEW)
NC
IN −
IN +
GND
1
8
2
7
3
6
4
5
TLV4111
D, DGN OR P PACKAGE
(TOP VIEW)
SHDN
VDD
OUT
NC
NC
IN −
IN +
GND
1
8
2
7
3
6
4
5
NC
VDD
OUT
NC
1
2
3
4
5
10
9
8
7
6
1OUT
1IN −
1IN +
GND
8
2
7
3
6
4
5
(TOP VIEW)
VDD+
2OUT
2IN −
2IN+
2SHDN
1OUT
1IN −
1IN+
GND
NC
1SHDN
NC
NC − No internal connection
2
1
TLV4113
D OR N PACKAGE
TLV4113
DGQ PACKAGE
(TOP VIEW)
1OUT
1IN −
1IN+
GND
1SHDN
TLV4112
D, DGN, OR P PACKAGE
(TOP VIEW)
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
14
2
13
3
12
4
11
5
10
6
9
7
8
VDD
2OUT
2IN −
2IN+
NC
2SHDN
NC
VDD
2OUT
2IN −
2IN+
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Differential input voltage, VID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± VDD
Input voltage range, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± VDD
Output current, IO (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800 mA
Continuous /RMS output current, IO (each output of amplifier): TJ ≤ 105°C . . . . . . . . . . . . . . . . . . . . 350 mA
TJ ≤ 150°C . . . . . . . . . . . . . . . . . . . . 110 mA
Peak output current, IO (each output of amplifier: TJ ≤ 105°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
TJ ≤ 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155 mA
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating free-air temperature range, TA: C suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
I suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
Maximum junction temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to GND.
2. To prevent permanent damage the die temperature must not exceed the maximum junction temperature.
DISSIPATION RATING TABLE
PACKAGE
θJC
(°C/W)
θJA
(°C/W)
TA ≤ 25°C
POWER RATING
TA = 125°C
POWER RATING
D (8)
38.3
176
710 mW
142 mW
D (14)
26.9
122.3
1022 mW
204.4 mW
DGN (8)‡
DGQ (10)‡
4.7
52.7
2.37 W
474.4 mW
4.7
52.3
2.39 W
478 mW
P (8)
41
104
1200 mW
240.4 mW
N (14)
32
78
1600 mW
320.5 mW
‡ See The Texas Instruments document, PowerPAD Thermally Enhanced Package Application Report (literature number
SLMA002), for more information on the PowerPAD package. The thermal data was measured on a PCB layout based
on the information in the section entitled Texas Instruments Recommended Board for PowerPAD on page 33 of the before
mentioned document.
recommended operating conditions
Supply voltage, VDD
Common-mode input voltage range, VICR
C-suffix
Operating free-air temperature, TA
I-suffix
V(on)
VDD = 3 V
VDD = 5 V
V(off)
VDD = 3 V
VDD = 5 V
Shutdown turn-on/off voltage level§
MIN
MAX
2.5
6
UNIT
V
0
V
0
VDD−1.5
70
−40
125
°C
2.1
3.8
0.9
V
1.65
§ Relative to GND
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3
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006
electrical characteristics at recommend operating conditions, VDD = 3 V and 5 V (unless otherwise
noted)
dc performance
PARAMETER
VIO
Input offset voltage
αVIO
Offset voltage draft
CMRR
Common-mode rejection ratio
TEST CONDITIONS
MIN
TYP
MAX
175
3500
VIC = VDD/2,
RL = 100 Ω,
VO = VDD/2 ,
RS = 50 Ω
25°C
3
VDD = 3 V,
RS = 50 Ω
VIC = 0 to 2 V,
25°C
63
VDD = 5 V,
RS = 50 Ω
VIC = 0 to 4 V,
25°C
68
VDD = 3 V,
VO(PP)=0 to 1V
AVD
TA†
25°C
Large-signal differential voltage
amplification
VDD = 5 V,
VO(PP)=0 to 3V
Full range
4000
25°C
78
Full range
67
25°C
85
RL=10 kΩ
Full range
75
25°C
88
Full range
75
25°C
90
Full range
85
RL=10 kΩ
µV
V
µV/°C
dB
RL=100 Ω
RL=100 Ω
UNITS
84
100
dB
94
110
† Full range is 0°C to 70°C for C suffix and − 40°C to 125°C for I suffix. If not specified, full range is −40°C to 125°C.
input characteristics
PARAMETER
IIO
Input offset current
TEST CONDITIONS
VIC = VDD/2
TA†
25°C
MIN
Input bias current
ri(d)
Differential input resistance
• DALLAS, TEXAS 75265
50
pA
100
Full range
25°C
POST OFFICE BOX 655303
250
0.3
TLV411xC
TLV411xI
UNITS
50
CIC
Common-mode input capacitance
f = 100 Hz
25°C
† Full range is 0°C to 70°C for C suffix and − 40°C to 125°C for I suffix. If not specified, full range is −40°C to 125°C.
4
25
Full range
25°C
IIB
MAX
0.3
TLV411xC
TLV411xI
VO = VDD/2,
RS = 50 Ω
TYP
500
1000
GΩ
5
pF
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006
electrical characteristics at specified free-air temperature, VDD = 3 V and 5 V (unless otherwise
noted) (continued)
output characteristics
PARAMETER
TEST CONDITIONS
IOH = −10 mA
VDD = 3 V, VIC = VDD/2
IOH =−100 mA
VOH
IOH = −10 mA
High-level output voltage
VDD = 5 V, VIC = VDD/2
IOH = −100 mA
IOH = −200 mA
TA†
25°C
MIN
TYP
2.7
2.97
Full range
2.7
25°C
2.6
Full range
2.6
25°C
4.7
Full range
4.7
25°C
4.6
Full range
4.6
25°C
4.45
−40°C to
85°C
4.35
25°C
VDD = 3 V and 5 V,
VIC = VDD/2
VOL
IOL = 10 mA
Full range
IOL = 100 mA
Full range
IO
Output current‡
IOS
Short-circuit output current‡
IOL = 200 mA
Measured at 0.5 V from rail
VDD = 3 V
VDD = 5 V
4.96
4.76
V
4.6
0.1
0.1
0.33
0.4
0.55
25°C
VDD = 5 V, VIC = VDD/2
UNITS
V
2.73
0.03
25°C
Low-level output voltage
MAX
0.38
−40°C to
85°C
V
0.6
0.7
±220
25°C
mA
±320
Sourcing
800
25°C
Sinking
mA
800
† Full range is 0°C to 70°C for C suffix and − 40°C to 125°C for I suffix. If not specified, full range is −40°C to 125°C.
‡ When driving output currents in excess of 200 mA, the MSOP PowerPAD package is required for thermal dissipation.
power supply
PARAMETER
IDD
PSRR
TEST CONDITIONS
Supply current (per channel)
VO = VDD/2
Power supply rejection ratio (∆VDD / ∆VIO)
TA
25°C
MIN
TYP
MAX
700
1000
Full range
VDD =2.7 to 3.3 V,
VIC = VDD/2 V
No load,
VDD =4.5 to 5.5 V,
VIC = VDD/2 V
No load,
1500
25°C
70
Full range
65
25°C
70
UNITS
µA
A
82
79
dB
Full range
65
† Full range is 0°C to 70°C for C suffix and − 40°C to 125°C for I suffix. If not specified, full range is −40°C to 125°C.
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5
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006
electrical characteristics at specified free-air temperature, VDD = 3 V and 5 V (unless otherwise
noted) (continued)
dynamic performance
PARAMETER
GBWP
SR
φM
Gain bandwidth product
Slew rate at unity gain
Phase margin
TEST CONDITIONS
RL=100 Ω
CL=10 pF
Vo(pp) = 2 V,
RL = 100 Ω,
CL = 10 pF
MIN
TYP
25°C
0.8
1.57
Full range
0.55
25°C
VDD = 5 V
Full range
CL = 10 pF
25°C
2.7
1
UNITS
MHz
V/ s
V/µs
1.57
0.7
16
V(STEP)pp = 1 V, 0.1%
AV = −1,
25°C
CL = 10 pF,
0.01%
RL = 100 Ω
† Full range is 0°C to 70°C for C suffix and − 40°C to 125°C for I suffix. If not specified, full range is −40°C to 125°C.
ts
MAX
66
RL = 100 Ω,
Gain margin
VDD = 3 V
TA†
25°C
dB
0.7
µs
Settling time
1.3
noise/distortion performance
PARAMETER
THD+N
Total harmonic distortion plus noise
TEST CONDITIONS
VO(pp) = VDD/2 V,
RL = 100 Ω,
f = 100 Hz
TA
AV = 1
AV = 10
AV = 100
f = 100 Hz
Vn
Equivalent input noise voltage
In
Equivalent input noise current
MIN
TYP
MAX
UNITS
0.025
0.035
0.15
25°C
55
f = 10 kHz
nV/√Hz
10
f = 1 kHz
0.31
fA/√Hz
shutdown characteristics
PARAMETER
IDD(SHDN)
TEST CONDITIONS
Supply current in shutdown mode (per channel)
(TLV4110, TLV4113)
SHDN = 0 V
TA†
25°C
Full range
MIN
TYP
MAX
3.4
10
15
UNITS
µA
A
t(ON)
Amplifier turn-on time‡
1
RL = 100 Ω
25°C
µs
‡
t(Off)
Amplifier turn-off time
3.3
† Full range is 0°C to 70°C for C suffix and − 40°C to 125°C for I suffix. If not specified, full range is −40°C to 125°C.
‡ Disable time and enable time are defined as the interval between application of the logic signal to SHDN and the point at which the supply current
has reached half its final value.
6
POST OFFICE BOX 655303
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SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
VIO
CMRR
Input offset voltage
vs Common-mode input voltage
Common-mode rejection ratio
vs Frequency
VOH
VOL
High-level output voltage
vs High-level output current
4, 6
Low-level output voltage
vs Low-level output current
5, 7
Zo
IDD
Output impedance
vs Frequency
Supply current
vs Supply voltage
9
kSVR
Power supply voltage rejection ratio
vs Frequency
10
AVD
Differential voltage amplification and phase
vs Frequency
11
Gain-bandwidth product
vs Supply voltage
12
vs Supply voltage
13
SR
Vn
Slew rate
1, 2
3
8
vs Temperature
14
Total harmonic distortion+noise
vs Frequency
15
Equivalent input voltage noise
vs Frequency
16
Phase margin
vs Capacitive load
17
Voltage-follower signal pulse response
18, 19
Inverting large-signal pulse response
20, 21
Small-signal inverting pulse response
Crosstalk
22
vs Frequency
Shutdown forward and reverse isolation
Shutdown supply current
24
vs Free-air temperature
Shutdown supply current/output voltage
POST OFFICE BOX 655303
23
25
26
• DALLAS, TEXAS 75265
7
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006
TYPICAL CHARACTERISTICS
INPUT OFFSET VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
6000
VDD = 3 V
TA = 25°C
4000
V IO − Input Offset Voltage − µ V
2000
0
−2000
−4000
VDD = 5 V
TA = 25°C
4000
2000
0
−2000
−4000
−6000
−0.2 0
−6000
−0.2 0 0.4 0.8 1.2 1.6 2
2.4 2.8 3.2
VICR − Common-Mode Input Voltage − V
0.4 1.0 1.6 2.2 2.8 3.4 4.0 4.6 5.2
Figure 1
VOL − Low-Level Output Voltage − V
2.7
TA = 125°C
TA = −40°C
TA = 0°C
TA = 25°C
2.3
TA = 70°C
2.2
2.1
2.0
0
50
100
150
200
250
0.8
TA = 70°C
0.7
TA = 25°C
0.6
TA = 0°C
TA = −40°C
0.5
0.4
0.3
0.2
0.1
0.0
300
TA = 125°C
0
50
Z o − Output Impedance − Ω
VOL − Low-Level Output Voltage − V
0.8
TA = 70°C
TA = 25°C
TA = 0°C
TA = −40°C
TA = 125°C
0.3
0.2
100
150
200
250
10 k
100 k
1M
10 M
VDD = 5 V
4.9
4.8
TA = 125°C
4.7
4.6
TA = −40°C
4.5
TA = 0°C
4.4
TA = 25°C
4.3
TA = 70°C
4.2
4.1
4.0
300
0
50
100
150
200
250
300
IOH − High-Level Output Current − mA
Figure 6
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
1200
VDD = 3 & 5 V
TA = 25°C
AV = 1
VIN = VDD/2 V
10
A = 100
1
A = 10
TA = 125°C
1000
TA = 70°C
800
TA = 25°C
600
TA = 0°C
TA = −40°C
400
200
0.1
A=1
0.0
0
50
100
150
200
250
IOL − Low-Level Output Current − mA
Figure 7
8
1k
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
100
VDD = 5 V
0.4
40
100
OUTPUT IMPEDANCE
vs
FREQUENCY
1.0
0.5
50
Figure 5
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
0.6
60
IOL − Low-Level Output Current − mA
Figure 4
0.7
70
5.0
VDD = 3 V
0.9
IOH − High-Level Output Current − mA
0.9
80
Figure 3
I DD − Supply Current − µ A
V OH − High-Level Output Voltage − V
2.8
2.4
90
f − Frequency − Hz
1.0
VDD = 3 V
2.5
100
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
3.0
2.6
VDD = 3 V
TA = 25°C
110
Figure 2
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
2.9
120
VICR − Common-Mode Input Voltage − V
V OH − High-Level Output Voltage − V
V IO − Input Offset Voltage − µ V
6000
COMMON-MODE REJECTION RATIO
vs
FREQUENCY
CMRR − Common-Mode Rejection Ratio − dB
INPUT OFFSET VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
300
0.10
100
1k
10k
100k
1M
10M
f − Frequency − Hz
Figure 8
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
0
0
1
2
3
4
VDD − Supply Voltage − V
Figure 9
5
6
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006
TYPICAL CHARACTERISTICS
DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE
vs
FREQUENCY
PSRR − Power Supply Rejection Ratio − V
100
VDD = 3 & 5 V
RF = 1 kΩ
RI = 100 Ω
VIN = 0 V
TA = 25°C
90
80
70
60
50
40
30
20
10
0
100
1k
10 k
100 k
1M
10 M
120
135
100
PHASE
80
90
60
40
0
−20
VDD = 3 & 5 V
RL = 100 kΩ
CL = 10 pF
TA = 25°C
−40
100
1k
10 k
f − Frequency − Hz
3.0
1.50
2.5
2.0
TA = 25°C
RL = 100 Ω
CL = 10 pF
f = 1 kHz
AV =open loop
3
3.5
4
4.5
5
SR−
1.00
0.75
0.50
0.25
0.00
5.5
2.5
0.1
A = 10
A=1
0.01
10 k
f − Frequency − Hz
100 k
Hz
A = 100
Figure 15
0.75
0.50
3
3.5
4
4.5
5
5.5
6
0.00
−40 −25 −10 5
160
140
Figure 14
PHASE MARGIN
vs
CAPACITIVE LOAD
100
VDD = 3 & 5 V
TA = 25°C
90
VDD = 5 V
80
120
VDD = 3 V
100
80
60
40
70
RL = 100
RL = 600
RNULL = 20
60
50
RNULL = 20
40
30
RNULL = 0
20
20
0
10
20 35 50 65 80 95 110 125
TA − Temperature − °C
EQUIVALENT INPUT VOLTAGE NOISE
vs
FREQUENCY
V n − Equivalent Input Voltage Noise − nV/
THD+N −Total Harmonic Distortion + Noise
VDD = 5 V
RL = 100 Ω
VO(PP) = VDD/2
AV = 1, 10, & 100
1k
SR−
1.00
Figure 13
10
SR+
1.25
VDD − Supply Voltage − V
TOTAL HARMONIC DISTORTION+NOISE
vs
FREQUENCY
100
1.50
VDD = 3 & 5 V
AV = 1
RL = 100 Ω
CL = 10 pF
0.25
Figure 12
10
SR+
1.25
VDD − Supply Voltage − V
1
1.75
Phase Margin − °
2.5
−45
10 M
2.00
AV = 1
RL = 100 Ω
CL = 10 pF
SR − Slew Rate − V/ µ s
1.75
SR − Slew Rate − V/ µ s
Gain-Bandwidth Product − MHz
2.00
3.5
0.0
1M
SLEW RATE
vs
TEMPERATURE
SLEW RATE
vs
SUPPLY VOLTAGE
4.0
0.5
100 k
Figure 11
GAIN-BANDWIDTH PRODUCT
vs
SUPPLY VOLTAGE
1.0
0
f − Frequency − Hz
Figure 10
1.5
45
GAIN
20
Phase Margin − °
A VD − Differential Voltage Amplification − dB
POWER SUPPLY REJECTION RATIO
vs
FREQUENCY
RNULL = 0
10
100
1k
10 k
100 k
f − Frequency − Hz
Figure 16
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
0
10
100
1k
10 k
100 k
Capacitive Load − pF
Figure 17
9
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006
TYPICAL CHARACTERISTICS
4
VIN
2
1
VO
0
4
VDD = 5 V
AV = 1
RL = 100 Ω
CL = 10 pF
TA = 25°C
3
2
1
0
−2
0
2
4
6
8
10
12
14
2.6
VIN
2.55
VDD = 5 V
AV = 1
RL = 100 Ω
CL = 10 pF
TA = 25°C
VIN = 100 mV
2.5
2.45
2.55
VO
2.5
2.45
2.4
−0.2 0.0
0.2
t − TIME − µs
VDD = 5 V
AV = −1
RL = 100 Ω
CL = 50 pF
TA = 25°C
VIN = 2.5 V
5
VIN
4
3
2
VO
1
0
−1
0
1
2
3
4
5
6
7
8
V O − Output Voltage − V V I − Input Voltage − V
V O − Output Voltage − V V I − Input Voltage − V
2
−2
1.0
1.2
−1
−2
5
VIN
4
3
2
VO
1
0
−1
0
1
2
3
4
2.54
−20
2.5
VDD = 5 V
AV = −1
RL = 100 Ω
CL = 50 pF
TA = 25°C
VIN = 2.5 V
2.46
2.42
2.54
VDD = 3 & 5 V
RL = 100 Ω
All Channels
−40
−60
VIN = 4 VPP
−80
2.5
VO
2.46
−100
VIN = 2 VPP
2.42
0 0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
−120
10
t − TIME − µs
100
1k
Figure 23
SHUTDOWN SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
I DD − Shutdown Supply Current − µ A
16
VIN = 0.1 VPP
−100
−120
VIN = 2.5 VPP
−140
14
12
VDD = 3 and 5 V
VIN = VDD/2,
No Load
10
8
6
4
2
0
−160
10
100
1k
10 k 100 k
1M
10 M
f − Frequency − Hz
−40 −25 −10 5
20 35 50 65 80 95 110 125
TA − Free-Air Temperature − °C
Figure 25
Figure 24
10
POST OFFICE BOX 655303
10 k
f − Frequency − Hz
Figure 22
VDD = 3 and 5 V,
RL = 100 Ω,
CL = 50 pF,
AV = 1.
TA = 25°C
−80
8
CROSSTALK
vs
FREQUENCY
VIN
0
−60
7
Figure 20
SHUTDOWN FORWARD AND
REVERSE ISOLATION
−40
6
0
Figure 21
−20
5
t − TIME − µs
2.58
t − TIME − µs
Shutdown F/R Isolation − dB
1.4
VDD = 5 V
AV = −1
RL = 100 Ω
CL = 50 pF
TA = 25°C
VIN = 2.5 V
0
SMALL-SIGNAL INVERTING
PULSE RESPONSE
3
0
0.8
2
1
Figure 19
INVERTING LARGE-SIGNAL
PULSE RESPONSE
−1
0.6
3
t − TIME − µs
Figure 18
1
0.4
Crosstalk − dB
3
V O − Output Voltage − V V I − Input Voltage − V
5
INVERTING LARGE-SIGNAL
PULSE RESPONSE
VOLTAGE-FOLLOWER
SMALL-SIGNAL PULSE RESPONSE
V O − Output Voltage − V V I − Input Voltage − V
V O − Output Voltage − V V − Input Voltage − V
I
VOLTAGE-FOLLOWER
LARGE-SIGNAL PULSE RESPONSE
• DALLAS, TEXAS 75265
100 k
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006
TYPICAL CHARACTERISTICS
SHDN − Shutdown Pulse − V
SHUTDOWN SUPPLY CURRENT / OUTPUT VOLTAGE
4
3
2
1
SD
0
I DD(SD) − Shutdown Supply Current −µ A
V O − Output Voltage − V
2
VDD = 3 V
AV = 1
RL = 100 Ω
CL = 10 pF
VIN = VDD/2
TA = 25° C
1.5
1
0.5
VO
0
0
2
IDD(SD)
4
6
0
20
40
60
80
100
120
t − Time − µs
Figure 26
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
11
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006
APPLICATION INFORMATION
shutdown function
Two members of the TLV411x family (TLV4110/3) have a shutdown terminal for conserving battery life in
portable applications. When the shutdown terminal is tied low, the supply current is reduced to just nano amps
per channel, the amplifier is disabled, and the outputs are placed in a high impedance mode. In order to save
power in shutdown mode, an external pullup resistor is required, therefore, to enable the amplifier the shutdown
terminal must be pulled high. When the shutdown terminal is left floating, care should be taken to ensure that
parasitic leakage current at the shutdown terminal does not inadvertently place the operational amplifier into
shutdown.
driving a capacitive load
When the amplifier is configured in this manner, capacitive loading directly on the output will decrease the
device’s phase margin leading to high frequency ringing or oscillations. Therefore, for capacitive loads of greater
than 1 nF, it is recommended that a resistor be placed in series (RNULL) with the output of the amplifier, as shown
in Figure 27. A maximum value of 20 Ω should work well for most applications.
RF
RG
−
Input
RF
RG
RNULL
Output
+
RL
RNULL
−
Input
Output
+
Snubber
CLOAD
RL
CL
C
(a)
(b)
Figure 27. Driving a Capacitive Load
offset voltage
The output offset voltage, (VOO) is the sum of the input offset voltage (VIO) and both input bias currents (IIB) times
the corresponding gains. The following schematic and formula can be used to calculate the output offset
voltage:
RF
IIB−
RG
+
−
VI
VO
+
RS
IIB+
V
OO
+V
IO
ǒ ǒ ǓǓ
1)
R
R
F
G
"I
IB)
R
S
ǒ ǒ ǓǓ
1)
R
R
F
"I
G
Figure 28. Output Offset Voltage Model
12
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
IB–
R
F
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006
APPLICATION INFORMATION
Rnull
_
+
RL
CL
Figure 29
general power design considerations
When driving heavy loads at high junction temperatures there is an increased probability of electromigration
affecting the long term reliability of ICs. Therefore for this not to be an issue either:
D The output current must be limited (at these high junction temperatures).
or
D The junction temperature must be limited.
The maximum continuous output current at a die temperature 150°C will be 1/3 of the current at 105°C.
The junction temperature will be dependent on the ambient temperature around the IC, thermal impedance from
the die to the ambient and power dissipated within the IC.
TJ = TA + θJA × PDIS
Where:
PDIS is the IC power dissipation and is equal to the output current multiplied by the voltage dropped across the
output of the IC.
θJA is the thermal impedance between the junction and the ambient temperature of the IC.
TJ is the junction temperature.
TA is the ambient temperature.
Reducing one or more of these factors results in a reduced die temperature. The 8-pin SOIC (small outline
integrated circuit) has a thermal impedance from junction to ambient of 176°C/W. For this reason it is
recommended that the maximum power dissipation of the 8-pin SOIC package be limited to 350 mW, with peak
dissipation of 700 mW as long as the RMS value is less than 350 mW.
The use of the MSOP PowerPAD dramatically reduces the thermal impedance from junction to case. And with
correct mounting, the reduced thermal impedance greatly increases the IC’s permissible power dissipation and
output current handling capability. For example, the power dissipation of the PowerPAD is increased to above
1 W. Sinusoidal and pulse-width modulated output signals also increase the output current capability. The
equivalent dc current is proportional to the square-root of the duty cycle:
I
DC(EQ)
+I
Cont
Ǹ(duty cycle)
CURRENT DUTY CYCLE
AT PEAK RATED CURRENT
EQUIVALENT DC CURRENT
AS A PERCENTAGE OF PEAK
100
100
70
84
50
71
Note that with an operational amplifier, a duty cycle of 70% would often result in the op amp sourcing current
70% of the time and sinking current 30%, therefore, the equivalent dc current would still be 0.84 times the
continuous current rating at a particular junction temperature.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
13
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006
APPLICATION INFORMATION
general PowerPAD design considerations
The TLV411x is available in a thermally-enhanced PowerPAD family of packages. These packages are
constructed using a downset leadframe upon which the die is mounted [see Figure 30(a) and Figure 30(b)]. This
arrangement results in the lead frame being exposed as a thermal pad on the underside of the package [see
Figure 30(c)]. Because this thermal pad has direct thermal contact with the die, excellent thermal performance
can be achieved by providing a good thermal path away from the thermal pad.
The PowerPAD package allows for both assembly and thermal management in one manufacturing operation.
During the surface-mount solder operation (when the leads are being soldered), the thermal pad must be
soldered to a copper area underneath the package. Through the use of thermal paths within this copper area,
heat can be conducted away from the package into either a ground plane or other heat dissipating device.
Soldering the PowerPAD to the PCB is always recommended, even with applications that have low-power
dissipation. This provides the necessary thermal and mechanical connection between the lead frame die pad
and the PCB.
The PowerPAD package represents a breakthrough in combining the small area and ease of assembly of
surface mount with mechanical methods of heatsinking.
DIE
Side View (a)
Thermal
Pad
DIE
End View (b)
Bottom View (c)
NOTE A: The thermal pad is electrically isolated from all terminals in the package.
Figure 30. Views of Thermally-Enhanced DGN Package
14
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006
APPLICATION INFORMATION
Although there are many ways to properly heatsink the PowerPAD package, the following steps illustrate the
recommended approach.
general PowerPAD design considerations (continued)
1. The thermal pad must be connected to the most negative supply voltage on the device, GND.
2. Prepare the PCB with a top side etch pattern as illustrated in the thermal land pattern mechanical drawings
at the end of this document. There should be etch for the leads as well as etch for the thermal pad.
3. Place five holes in the area of the thermal pad. These holes should be 13 mils in diameter. Keep them small
so that solder wicking through the holes is not a problem during reflow.
4. Additional vias may be placed anywhere along the thermal plane outside of the thermal pad area. This helps
dissipate the heat generated by the TLV411x IC. These additional vias may be larger than the 13-mil
diameter vias directly under the thermal pad. They can be larger because they are not in the thermal pad
area to be soldered so that wicking is not a problem.
5. Connect all holes to the internal ground plane that is at the same voltage potential as the device GND pin.
6. When connecting these holes to the ground plane, do not use the typical web or spoke via connection
methodology. Web connections have a high thermal resistance connection that is useful for slowing the heat
transfer during soldering operations. This makes the soldering of vias that have plane connections easier.
In this application, however, low thermal resistance is desired for the most efficient heat transfer. Therefore,
the holes under the TLV411x PowerPAD package should make their connection to the internal ground plane
with a complete connection around the entire circumference of the plated-through hole.
7. The top-side solder mask should leave the terminals of the package and the thermal pad area with its five
holes exposed. The bottom-side solder mask should cover the five holes of the thermal pad area. This
prevents solder from being pulled away from the thermal pad area during the reflow process.
8. Apply solder paste to the exposed thermal pad area and all of the IC terminals.
9. With these preparatory steps in place, the TLV411x IC is simply placed in position and run through the solder
reflow operation as any standard surface-mount component. This results in a part that is properly installed.
For a given θJA, the maximum power dissipation is shown in Figure 31 and is calculated by the following formula:
P
Where:
D
+
ǒ
T
Ǔ
–T
MAX A
q
JA
PD = Maximum power dissipation of TLV411x IC (watts)
TMAX = Absolute maximum junction temperature (150°C)
TA
= Free-ambient air temperature (°C)
θJA = θJC + θCA
θJC = Thermal coefficient from junction to case
θCA = Thermal coefficient from case to ambient air (°C/W)
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
15
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006
APPLICATION INFORMATION
general PowerPAD design considerations (continued)
MAXIMUM POWER DISSIPATION
vs
FREE-AIR TEMPERATURE
4
TJ = 150°C
Maximum Power Dissipation − W
3.5
3
DGN Package
Low-K Test PCB
θJA = 52.7°C/W
2.5
PDIP Package
Low-K Test PCB
θJA = 104°C/W
2
SOIC Package
Low-K Test PCB
θJA = 176°C/W
1.0
1
0.5
0
−55 −40 −25 −10
5
20 35 50 65 80 95 110 125
TA − Free-Air Temperature − °C
NOTE A: Results are with no air flow and using JEDEC Standard Low-K test PCB.
Figure 31. Maximum Power Dissipation vs Free-Air Temperature
The next consideration is the package constraints. The two sources of heat within an amplifier are quiescent
power and output power. The designer should never forget about the quiescent heat generated within the
device, especially multi-amplifier devices. Because these devices have linear output stages (Class A-B), most
of the heat dissipation is at low output voltages with high output currents.
The other key factor when dealing with power dissipation is how the devices are mounted on the PCB. The
PowerPAD devices are extremely useful for heat dissipation. But, the device should always be soldered to a
copper plane to fully use the heat dissipation properties of the PowerPAD. The SOIC package, on the other
hand, is highly dependent on how it is mounted on the PCB. As more trace and copper area is placed around
the device, θJA decreases and the heat dissipation capability increases. The currents and voltages shown in
these graphs are for the total package. For the dual amplifier packages, the sum of the RMS output currents
and voltages should be used to choose the proper package.
16
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006
APPLICATION INFORMATION
macromodel information
Macromodel information provided was derived using Microsim Parts, the model generation software used
with Microsim PSpice. The Boyle macromodel (see Note 3) and subcircuit in Figure 33 are generated using
the TLV411x typical electrical and operating characteristics at TA = 25°C. Using this information, output
simulations of the following key parameters can be generated to a tolerance of 20% (in most cases):
D Maximum positive output voltage swing
D Unity-gain frequency
D Maximum negative output voltage swing
D Common-mode rejection ratio
D Slew rate
D Phase margin
D Quiescent power dissipation
D DC output resistance
D Input bias current
D AC output resistance
D Open-loop voltage amplification
D Short-circuit output current limit
NOTE 3: G. R. Boyle, B. M. Cohn, D. O. Pederson, and J. E. Solomon, “Macromodeling of Integrated Circuit Operational Amplifiers,” IEEE Journal
of Solid-State Circuits, SC-9, 353 (1974).
3
99
VDD
+
egnd
rd1
rd2
rss
ro2
css
fb
rp
−
c1
7
11
12
+
c2
vlim
1
+
r2
9
6
IN+
−
vc
D
D
8
+
−
vb
ga
2
G
G
−
IN−
ro1
gcm
ioff
53
S
S
OUT
dp
91
10
iss
GND
4
+
dc
−
dlp
ve
+ 54
vlp
−
90
dln
+
hlim
−
5
92
−
vln
+
de
* TLV4112_5V operational amplifier ”macromodel” subcircuit
* updated using Model Editor release 9.1 on 01/18/00 at 15:50
Model Editor is an OrCAD product.
*
* connections: non−inverting input
*
| inverting input
*
| | positive power supply
*
| | | negative power supply
*
| | | | output
*
|| | | |
.subckt TLV4112_5V
12345
*
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6
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10.000E−12
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54
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dx
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92
90
dx
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4
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dx
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0
poly(2) (3,0) (4,0) 0 .5 .5
fb
7
99
poly(5) vb vc ve vlp vln 0
+ 33.395E6 −1E3 1E3 33E6 −33E6
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0
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10
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7
91
0
dx
dy
jx1
jx2
4
dc
13.800E−6
0
vlim 1K
6
dc
75E−9
2
10 jx1
1
10 jx2
9
100.00E3
11
5.9386E3
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5.9386E3
5
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3.3333E3
99
14.493E6
0
dc 0
53
dc .86795
4
dc .86795
8
dc 0
0
dc 300
92
dc 300
D(Is=800.00E−18)
D(Is=800.00E−18 Rs=1m Cjo=10p)
NJF(Is=150.00E−12 Beta=2.0547E−3 +Vto=−1)
NJF(Is=150.00E−12 Beta=2.0547E−3 + Vto=−1)
Figure 32. Boyle Macromodel and Subcircuit
PSpice and Parts are trademarks of MicroSim Corporation.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
17
PACKAGE OPTION ADDENDUM
www.ti.com
14-Oct-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TLV4110ID
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
4110I
Samples
TLV4110IDGNR
ACTIVE
HVSSOP
DGN
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
AHM
Samples
TLV4110IDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
4110I
Samples
TLV4110IP
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
-40 to 125
TLV4110I
Samples
TLV4111CD
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
4111C
Samples
TLV4111CDGN
ACTIVE
HVSSOP
DGN
8
80
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
AHN
Samples
TLV4111ID
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
4111I
Samples
TLV4111IDGN
ACTIVE
HVSSOP
DGN
8
80
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
AHO
Samples
TLV4111IDGNR
ACTIVE
HVSSOP
DGN
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
AHO
Samples
TLV4111IDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
4111I
Samples
TLV4112CD
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
4112C
Samples
TLV4112CDGN
ACTIVE
HVSSOP
DGN
8
80
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
0 to 70
AHP
Samples
TLV4112CP
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
0 to 70
TLV4112C
Samples
TLV4112ID
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
4112I
Samples
TLV4112IDGN
ACTIVE
HVSSOP
DGN
8
80
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
AHQ
Samples
TLV4112IDGNR
ACTIVE
HVSSOP
DGN
8
2500
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
AHQ
Samples
TLV4112IDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
4112I
Samples
TLV4112IP
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
-40 to 125
TLV4112I
Samples
TLV4113ID
ACTIVE
SOIC
D
14
50
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
4113I
Samples
TLV4113IDGQ
ACTIVE
HVSSOP
DGQ
10
80
RoHS & Green
Call TI | NIPDAU
Level-1-260C-UNLIM
-40 to 125
AHS
Samples
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
14-Oct-2022
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TLV4113IDGQR
ACTIVE
HVSSOP
DGQ
10
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
AHS
Samples
TLV4113IN
ACTIVE
PDIP
N
14
25
RoHS & Green
NIPDAU
N / A for Pkg Type
-40 to 125
TLV4113I
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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