2N4401

Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-92 Plastic Package 2N4400, 2N4401 2N4402, 2N4403 2N4400, 4401 NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N4402, 4403 PNP SILICON PLANAR EPITAXIAL TRANSISTORS General Purpose Switching Applications C EB DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 5 DEG 1,14 1,14 12,70 1.982 MAX 5,33 5,20 4,19 0,55 0,50 1,40 1,53 – 2.082 ALL DIMENSIONS IN M.M. 123 1 = EMITTER 2 = BASE 3 = COLLECTOR ABSOLUTE MAXIMM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation At Ta=25 ºC Derate Above 25 ºC Power Dissipation At Tc=25 ºC Derate Above 25 ºC Operating & Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Rth (j-c) 83.3 ºC/W ºC/W Junction to Ambient Rth (j-a) 200 ELECTRICAL CHARACTERISTICS (Ta =25 ºC unless otherwise specified) T j ,Tstg PD Symbol VCEO VCBO V EBO IC PD 2N4400/01 40 60 6 600 625 5.0 1.5 12 -55 to +150 2N4402/03 40 40 5 V V V mA mW mW/ºC W mW/ºC ºC Units Continental Device India Limited Data Sheet Page 1 of 6 2N4400, 2N4401 2N4402, 2N4403 Characteristic Collector Emitter Voltage IC=1mA, IB =0 Collector Base Voltage IC=100µA, IE =0 Emitter Base Voltage IE=100µA, I C=0 Base Cutoff Current VCE =35V, VBE=0.4V Collector Cutoff Current VCE =35V, VBE=0.4V Collector-Emitter Saturation Voltage IC=150mA, I B =15mA IC=500mA, I B =50mA Base-Emitter Saturation Voltage IC=150mA, I B =15mA IC=500mA,I B =50mA Characteristic D C Current Gain IC=0.1mA,VCE=1V IC=1mA,V CE=1V IC=10mA,V CE=1V IC=150mA,V CE=1V* IC=150mA,V CE=2V* IC=500mA,V CE=2V* Symbol BVCEO* BVCBO BVEBO IBEV ICEX 2N4400/01 >40 >60 >6 40 >5 30 >30 >60 >50 >100 50-150 100-300 >20 >20 DYNAMIC CHARACTERISTICS Small Signal Current Gain IC=1mA, VCE=10V, f=1KHz hfe Input Impedance IC=1mA, VCE=10V, f=1KHz hie 20-250 0.5-7.5 40-500 1.0-15 30-250 0.75-7.5 60-500 1.5-15 KΩ Continental Device India Limited Data Sheet Page 2 of 6 2N4400, 2N4401 2N4402, 2N4403 Characteristic Symbol 2N4400 2N4401 2N4402 2N4403 0.1-8.0 Unit x10–4 Voltage Feedback Ratio hre ALL IC=1mA, VCE=10V, f=1KHz Output Admittance IC=1mA, VCE=10V, f=1KHz hoe Collector-Base Capacitance VCB=5V, IE=0, f=100KHz VCB=10V, IE =0, f=140KHz Emitter-Base Capacitance VEB=0.5V, IC=0, f=100KHz VEB=0.5V, IC=0, f=140KHz Transition Frequency IC=20mA, VCE=10V f=100MHz 1.0-30 1.0-30 1.0-100 1.0-100 µ C cb