CMMT591

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMMT591 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistor Marking CMMT = 591 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current Peak Pulse current Base current Total power dissipation at Tamb = 25°C Junction temperature D.C. current gain –IC = 500 mA; VCE = 5 V Transition frequency at f = 100 MHz IC = 50 mA; VCE = 10 V VCBO VCEO VEBO IC ICM IB Ptot Tj hFE max. max. max. max. max. max. max. max. min. max. min. 80 60 5 1 2 200 500 150 100 300 150 MHz V V V A A mA mW °C fT Continental Device India Limited Data Sheet Page 1 of 3 CMMT591 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current Peak Pulse current Base current Total power dissipation at Tamb = 25°C Storage temperature Junction temperature VCBO VCEO VEBO IC ICM IB Ptot Tstg Tj max. max. max. max. max. max. max. -55 to max. 80 60 5 1 2 200 500 +150 150 V V V A A mA mW °C °C CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector cut-off current IE = 0; VCB = 60 V ICBO VBE = 0; VCE = 60 V ICES Emitter cut-off current VEB = 4 V; IC = 0 Breakdown voltages IC = 10 mA; IB = 0 IC = 100 µA; IE = 0 IE = 100 µA; IC = 0 Base-emitter voltage IC = 1 A; VCE = 5 V Saturation voltage IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA IC = 1 A; IB = 100 mA D.C. current gain IC = 1 mA; VCE = 5 V IC = 500 mA; VCE = 5 V* IC = 1 A; VCE = 5 V* IC = 2 A; VCE = 5 V* Collector capacitance at f = 1 MHz IE = 0; VCB = 10 V Transition frequency at f = 100 MHz IC = 50 mA; VCE = 10 V C ob fT IEBO VCEO VCBO VEBO VBE* max. max. max. min. min. min. max. 100 nA 100 nA 100 nA 60 V 80 V 5V 1V 300 mV 600 mV 1.2 V 100 100 300 80 15 10 pF 150 MHz VCEsat* max. max. VBEsat* max. hFE min. min. max. min. min. max. min. * Measured under pulsed conditions: Pulse width = 300 µs, duty cycle = 2%. Continental Device India Limited Data Sheet Page 2 of 3 Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com Continental Device India Limited Data Sheet Page 3 of 3 CDIL is a registered Trademark of