CJD44H11_10

CJD44H11 NPN CJD45H11 PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD44H11, CJD45H11 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for switching and power amplifier applications. MARKING: FULL PART NUMBER DPAK TRANSISTOR CASE MAXIMUM RATINGS: (TC=25ºC unless otherwise noted) Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Power Dissipation (TA=25ºC) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCEO VEBO IC ICM PD PD TJ, Tstg ΘJC ΘJA UNITS V V A A W W ºC ºC/W ºC/W 80 5.0 8.0 16 20 1.75 -65 to +150 6.25 71.4 ELECTRICAL CHARACTERISTICS: (TC=25ºC unless otherwise noted) SYMBOL TEST CONDITIONS ICES VCE=80V IEBO VEB=5.0V BVCEO IC=30mA VCE(SAT) IC=8.0A, IB=400mA VBE(SAT) IC=8.0A, IB=800mA hFE VCE=1.0V, IC=2.0A hFE VCE=1.0V, IC=4.0A fT VCE=10V, IC=500mA, f=20MHz (CJD44H11) fT VCE=10V, IC=500mA, f=20MHz (CJD45H11) Cob VCB=10V, IE=0, f=0.1MHz (CJD44H11) Cob VCB=10V, IE=0, f=0.1MHz (CJD45H11) td + tr IC=5.0A, IB1=500mA (CJD44H11) td + tr IC=5.0A, IB1=500mA (CJD45H11) ts IC=5.0A, IB1=IB2=500mA (CJD44H11, CJD45H11) tf IC=5.0A, IB1=IB2=500mA (CJD44H11) tf IC=5.0A, IB1=IB2=500mA (CJD45H11) MIN TYP MAX 10 50 1.0 1.5 80 UNITS µA µA V V V 60 40 60 50 120 220 320 150 450 130 100 MHz MHz pF pF ns ns ns ns ns R2 (4-January 2010) CJD44H11 NPN CJD45H11 PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS DPAK TRANSISTOR CASE - MECHANICAL OUTLINE LEAD CODE: B) BASE C) COLLECTOR E) EMITTER C) COLLECTOR MARKING: FULL PART NUMBER R2 (4-January 2010) w w w. c e n t r a l s e m i . c o m