CMLT5551_10

CMLT5551 SURFACE MOUNT DUAL NPN SMALL SIGNAL HIGH VOLTAGE SILICON SWITCHING TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5551 consists of two individual, isolated NPN silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 suface mount package. This PICOmini™ devices has been designed for high voltage amplifier applications. MARKING CODE: 5C5 SOT-563 CASE MAXIMUM RATINGS: (TA=25 C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance O SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA O UNITS 180 160 6.0 600 350 -65 to +150 357 V V V mA mW C C/W O O ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25 C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ICBO ICBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE fT Cob hfe NF VCB=120V VCB=120V, TA=100°C IC=100μA IC=1.0mA IE=10μA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=5.0V, IC=1.0mA VCE=5.0V, VCE=5.0V, IC=10mA IC=50mA 80 80 30 100 50 300 6.0 200 8.0 250 180 160 6.0 0.15 0.20 1.00 1.00 50 50 UNITS nA μA V V V V V V V VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=200μA, RS=10Ω, f=10Hz to 15.7kHz MHz pF dB R1 (20-January 2010) CMLT5551 SURFACE MOUNT DUAL NPN SMALL SIGNAL HIGH VOLTAGE SILICON SWITCHING TRANSISTORS SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: 5C5 R1 (20-January 2010) w w w. c e n t r a l s e m i . c o m