CMPT5551_10

CMPT5551 SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING CODE: 1FF SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 180 160 6.0 600 350 -65 to +150 357 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=120V ICBO VCB=120V, TA=100°C BVCBO IC=100μA 180 BVCEO IC=1.0mA 160 BVEBO IE=10μA 6.0 VCE(SAT) IC=10mA, IB=1.0mA VCE(SAT) IC=50mA, IB=5.0mA VBE(SAT) IC=10mA, IB=1.0mA VBE(SAT) IC=50mA, IB=5.0mA hFE VCE=5.0V, IC=1.0mA 80 hFE VCE=5.0V, IC=10mA 80 hFE VCE=5.0V, IC=50mA 30 fT VCE=10V, IC=10mA, f=100MHz 100 Cob VCB=10V, IE=0, f=1.0MHz hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 NF VCE=5.0V, IC=200μA, RS=10Ω, f=10Hz to 15.7kHz MAX 50 50 0.15 0.20 1.00 1.00 250 300 6.0 200 8.0 UNITS nA μA V V V V V V V MHz pF dB R5 (1-February 2010) CMPT5551 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: 1FF R5 (1-February 2010) w w w. c e n t r a l s e m i . c o m