CZT5551E

CZT5551E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5551E is an NPN Silicon Transistor, packaged in an SOT-223 case, designed for general purpose amplifier applications requiring high breakdown voltage. MARKING CODE: FULL PART NUMBER SOT-223 CASE APPLICATIONS: • General purpose switching and amplification • Telephone applications FEATURES: • High Collector Breakdown Voltage 250V • Low Leakage Current 50nA Max • Low Saturation Voltage 100mV Max @ 50mA • Complementary Device CZT5401E • SOT-223 Surface Mount Package MAXIMUM RATINGS: (TA=25°C) ♦ Collector-Base Voltage ♦ Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg ΘJA 250 220 6.0 600 2.0 -65 to +150 62.5 UNITS V V V mA W °C °C/W SYMBOL ICBO ICBO ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCB=120V VCB=120V, TA=100°C VEB=4.0V IC=100μA IC=1.0mA IE=10μA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IC=50mA, IB=1.0mA IB=5.0mA 250 220 6.0 MAX 50 50 50 UNITS nA μA nA V V V ♦ BVCBO ♦ BVCEO ♦ ♦ VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) BVEBO IEBO 75 100 1.00 1.00 mV mV V V ♦ Enhanced Specification R0 (10-May 2006) Central TM CZT5551E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR Semiconductor Corp. SYMBOL ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA VCE=10V, IC=150mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=200μA, RS=10Ω f=10Hz to 15.7kHz 120 120 75 25 100 MAX UNITS ♦ hFE ♦ hFE ♦ hFE ♦ hFE fT Cob Cib hfe NF 300 300 6.0 20 MHz pF pF 50 200 8.0 dB ♦ Enhanced Specification SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING CODE: FULL PART NUMBER R0 (10-May 2006)