CH721UPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * High speed switching C H721UPT FEATURE * Small surface mounting type. (SC-88/SOT-363) * Low VF and low IR * Three diodes in parallel installation SC-88/SOT-363 (1) (6) 1.2~1.4 0.65 0.65 2.0~2.2 CONSTRUCTION * Silicon epitaxial planar (4) 0.15~0.35 (3) 1.15~1.35 MARKING * JD 0.08~0.15 0.1 Min. 0.8~1.1 0~0.1 2.15~2.45 CIRCUIT (6) (4) (1) (3) Dimensions in millimeters SC-88/SOT-363 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 8.3 mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Maximum Operating Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TJ TSTG CH721UPT 40 28 40 0.2 0.6 2.0 +125 -40 to +125 UNITS Volts Volts Volts Amps Amps pF o C C o ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage at IF= 200mA Maximum Average Reverse Current at VR= 10V NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 1.0 volts. 2. ESD sensitive product handling required. SYMBOL VF IR CH721UPT 0.50 1.0 UNITS Volts uAmps 2002-7 RATING CHARACTERISTIC CURVES ( CH721UPT ) FIG. 1 - FORWARD CHARACTERISTICS 1 FORWARD CURRENT, (A) REVERSE CURRENT, (A) 100m 10m 1m 100u 10u 1u 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE, (V) 5 o FIG. 2 - REVERSE CHARACTERISTICS 100u 10u 1u 25oC Ta =125oC 75oC -25 o C 2 =1 Ta C 75 o C 25 o C 100n 10n 1n 0 5 10 15 20 25 30 35 REVERSE VOLTAGE, (V) -25oC FIG. 3 - TYPICAL JUNCTION CAPACITANCE AVERAGE FORWARD CURRENT, (%) 100 JUNCTION CAPACITANCE, (pF) 50 20 10 5 2 1 0 2 4 6 8 10 12 14 REVERSE VOLTAGE, (V) FIG. 4 - TYPICAL FORWARD CURRENT DERATING CURVE 100 80 60 40 20 0 0 25 50 75 100 o 125 AMBIENT TEMPERATURE, ( C)