CY7C1019CV33
128K x 8 Static RAM
Features
• Pin and function compatible with CY7C1019BV33
• High speed
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and three-state drivers. This
device has an automatic power-down feature that significantly
reduces power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O
pins (I/O0 through I/O7) is then written into the location
specified on the address pins (A0 through A16).
— tAA = 8, 10, 12, 15 ns
• CMOS for optimum speed/power
• Data retention at 2.0V
• Center power/ground pinout
• Automatic power-down when deselected
• Easy memory expansion with CE and OE options
• Available in 48-ball VFBGA, 32-pin TSOP II and 400-mil
SOJ package
• Also available in lead-free 48-ball VFBGA and 32-pin
TSOP II packages
Functional Description
The CY7C1019CV33 is a high-performance CMOS static
RAM organized as 131,072 words by 8 bits. Easy memory
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
The eight input/output pins (I/O0 through I/O7) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW, and WE LOW).
The CY7C1019CV33 is available in Standard 48-ball FBGA,
32-pin TSOP II and 400-mil-wide SOJ packages.
Logic Block Diagram
Pin Configuration
SOJ/TSOP II
Top View
A0
A1
A2
A3
I/O
0
INPUT BUFFER
CE
I/O0
I/O1
VCC
V SS
I/O
1
I/O
2
512 x 256 x 8
ARRAY
SENSE AMPS
ROW DECODER
A0
A1
A2
A3
A4
A5
A6
A7
A8
I/O
3
I/O2
I/O3
WE
A4
A5
A6
A7
I/O
4
I/O
5
CE
COLUMN
DECODER
I/O
6
POWER
DOWN
I/O
WE
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A16
A15
A14
A13
OE
I/O7
I/O6
VSS
VCC
I/O5
I/O4
A12
A11
A10
A9
A8
A9
A 10
A 11
A 12
A 13
A 14
A 15
A 16
OE
7
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Cypress Semiconductor Corporation
Document #: 38-05130 Rev. *E
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised January 9, 2006
CY7C1019CV33
Pin Configuration (continued)
48-ball FBGA
(Top View)
2
3
4
5
6
NC
OE
A2
A6
A7
NC
A
I/O0
NC
A1
A5
CE
I/O7
B
I/O1
NC
A0
A4
NC
I/O6
C
VSS
NC
NC
A3
NC
VCC
D
VCC
NC
NC
NC
NC
VSS
E
I/O2
NC
A14
A11
I/O4
I/O5
F
I/O3
NC
A15
A12
WE
A8
G
NC
A10
A16
A13
A9
NC
H
1
Selection Guide
7C1019CV33-8
7C1019CV33-10
7C1019CV33-12
7C1019CV33-15
Unit
Maximum Access Time
8
10
12
15
ns
Maximum Operating Current
85
80
75
70
mA
Maximum Standby Current
5
5
5
5
mA
Document #: 38-05130 Rev. *E
Page 2 of 10
CY7C1019CV33
Maximum Ratings
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
(Above which the useful life may be impaired. For user guidelines, not tested.)
Latch-up Current...................................................... >200 mA
Storage Temperature ................................. –65°C to +150°C
Operating Range
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on VCC to Relative GND[1] ... –0.5V to + 4.6V
Range
DC Voltage Applied to Outputs
in High-Z State[1] ....................................–0.5V to VCC + 0.5V
Commercial
Industrial
DC Input Voltage[1] .................................–0.5V to VCC + 0.5V
Ambient
Temperature
VCC
0°C to +70°C
3.3V ± 10%
–40°C to +85°C
3.3V ± 10%
Electrical Characteristics Over the Operating Range
7C1019CV33
-8
Parameter
Description
Test Conditions Min.
7C1019CV33
-10
Max.
Min.
2.4
Max.
2.4
7C1019CV33
-12
Min.
Max.
2.4
Min.
Max.
2.4
VOH
Output HIGH
Voltage
VCC = Min.,
IOH = –4.0 mA
VOL
Output LOW
Voltage
VCC = Min.,
IOL = 8.0 mA
VIH
Input HIGH
Voltage
2.0
VCC + 0.3
2.0
VCC + 0.3
2.0
VCC + 0.3
VIL
Input LOW
Voltage[1]
–0.3
0.8
–0.3
0.8
–0.3
IIX
Input Load
Current
GND < VI < VCC
–1
+1
–1
+1
IOZ
Output Leakage GND < VI < VCC,
Current
Output Disabled
–1
+1
–1
+1
IOS[2.]
Output Short
Circuit Current
VCC = Max.,
VOUT = GND
ICC
VCC Operating
Supply Current
ISB1
ISB2
0.4
7C1019CV33
-15
0.4
0.4
Unit
V
0.4
V
2.0
VCC + 0.3
V
0.8
–0.3
0.8
V
–1
+1
–1
+1
µA
–1
+1
–1
+1
µA
–300
–300
–300
–300
mA
VCC = Max.,
IOUT = 0 mA,
f = fMAX = 1/tRC
85
80
75
70
mA
Automatic CE
Power-down
Current
—TTL Inputs
Max. VCC, CE >
VIH
VIN > VIH or
VIN < VIL, f = fMAX
15
15
15
15
mA
Automatic CE
Power-down
Current
—CMOS Inputs
Max. VCC,
CE > VCC – 0.3V,
VIN > VCC – 0.3V,
or VIN < 0.3V, f = 0
5
5
5
5
mA
Capacitance[3]
Parameter
Description
CIN
Input Capacitance
COUT
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz,
VCC = 5.0V
Max.
Unit
8
pF
8
pF
Notes:
1. VIL (min.) = –2.0V for pulse durations of less than 20 ns.
2. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
3. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05130 Rev. *E
Page 3 of 10
CY7C1019CV33
AC Test Loads and Waveforms[4]
8-ns devices:
10-, 12-, 15-ns devices:
Z = 50Ω
50 Ω
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
OUTPUT
30 pF*
(b)
(a)
90%
High-Z characteristics:
R 317Ω
90%
3.3V
10%
10%
GND
R2
351Ω
30 pF
1.5V
ALL INPUT PULSES
3.0V
R 317Ω
3.3V
OUTPUT
OUTPUT
R2
351Ω
5 pF
(c)
Rise Time: 1 V/ns
Fall Time: 1 V/ns
(d)
Switching Characteristics[5] Over the Operating Range
7C1019CV33-8 7C1019CV33-10 7C1019CV33-12 7C1019CV33-15
Parameter
Description
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Read Cycle
tRC
Read Cycle Time
tAA
Address to Data Valid
tOHA
Data Hold from Address Change
tACE
8
10
8
3
12
10
3
15
12
3
ns
15
3
ns
ns
CE LOW to Data Valid
8
10
12
15
ns
tDOE
OE LOW to Data Valid
5
5
6
7
ns
tLZOE
OE LOW to Low Z
tHZOE
tLZCE
tHZCE
tPU[8]
tPD[8]
Write
OE HIGH to High
CE LOW to Low
Z[7]
CE HIGH to High
0
Z[6, 7]
3
Z[6, 7]
CE LOW to Power-Up
0
4
3
4
0
6
3
5
0
8
CE HIGH to Power-Down
0
0
5
3
6
7
ns
ns
15
12
ns
ns
0
0
10
ns
7
ns
Cycle[9, 10]
tWC
Write Cycle Time
8
10
12
15
ns
tSCE
CE LOW to Write End
7
8
9
10
ns
tAW
Address Set-Up to Write End
7
8
9
10
ns
tHA
Address Hold from Write End
0
0
0
0
ns
tSA
Address Set-Up to Write Start
0
0
0
0
ns
tPWE
WE Pulse Width
6
7
8
10
ns
tSD
Data Set-Up to Write End
5
5
6
8
ns
tHD
Data Hold from Write End
0
0
0
0
ns
3
3
3
3
ns
tLZWE
tHZWE
WE HIGH to Low
Z[7]
WE LOW to High
Z[6, 7]
4
5
6
7
ns
Notes:
4. AC characteristics (except High-Z) for all 8-ns parts are tested using the load conditions shown in Figure (a). All other speeds are tested using the Thevenin load
shown in Figure (b). High-Z characteristics are tested for all speeds using the test load shown in Figure (d).
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V.
6. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (d) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
7. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
8. This parameter is guaranteed by design and is not tested.
9. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any
of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.
10. The minimum write cycle time for Write Cycle no. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD.
Document #: 38-05130 Rev. *E
Page 4 of 10
CY7C1019CV33
Switching Waveforms
Read Cycle No. 1[11, 12]
tRC
ADDRESS
tAA
tOHA
DATA OUT
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2 (OE Controlled)[12, 13]
ADDRESS
tRC
CE
tACE
OE
tHZOE
tDOE
DATA OUT
tHZCE
tLZOE
HIGH IMPEDANCE
DATA VALID
tLZCE
VCC
SUPPLY
CURRENT
HIGH
IMPEDANCE
tPD
tPU
ICC
50%
50%
ISB
Write Cycle No. 1 (CE Controlled)[14, 15]
tWC
ADDRESS
tSCE
CE
tSA
tSCE
tAW
tHA
tPWE
WE
tSD
DATA I/O
tHD
DATA VALID
Notes:
11. Device is continuously selected. OE, CE = VIL.
12. WE is HIGH for read cycle.
13. Address valid prior to or coincident with CE transition LOW.
14. Data I/O is high impedance if OE = VIH.
15. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
Document #: 38-05130 Rev. *E
Page 5 of 10
CY7C1019CV33
Switching Waveforms (continued)
Write Cycle No. 2 (WE Controlled, OE HIGH During Write)[14, 15]
tWC
ADDRESS
tSCE
CE
tAW
tHA
tSA
tPWE
WE
OE
tSD
DATA I/O
tHD
DATAIN VALID
NOTE 16
tHZOE
Write Cycle No. 3 (WE Controlled, OE LOW)[15]
tWC
ADDRESS
tSCE
CE
tAW
tSA
tHA
tPWE
WE
tSD
NOTE 16
DATA I/O
tHD
DATA VALID
tLZWE
tHZWE
Truth Table
I/O0–I/O7
Mode
Power
CE
OE
WE
H
X
X
High Z
Power-Down
Standby (ISB)
L
L
H
Data Out
Read
Active (ICC)
L
X
L
Data In
Write
Active (ICC)
L
H
H
High Z
Selected, Outputs Disabled
Active (ICC)
Note:
16. During this period the I/Os are in the output state and input signals should not be applied.
Document #: 38-05130 Rev. *E
Page 6 of 10
CY7C1019CV33
Ordering Information
Speed
(ns)
8
10
12
15
Ordering Code
Package
Diagram
Operating
Range
Package Type
CY7C1019CV33-8VC
51-85033
32-pin 400-Mil Molded SOJ
CY7C1019CV33-8VI
51-85033
32-pin 400-Mil Molded SOJ
Industrial
CY7C1019CV33-10VC
51-85033
32-pin 400-Mil Molded SOJ
Commercial
CY7C1019CV33-10ZC
51-85095
32-pin TSOP II
CY7C1019CV33-10ZXC
51-85095
32-pin TSOP II (Pb-Free)
CY7C1019CV33-10VI
51-85033
32-pin 400-Mil Molded SOJ
CY7C1019CV33-10ZI
51-85095
32-pin TSOP II
CY7C1019CV33-10ZXI
51-85095
32-pin TSOP II (Pb-Free)
CY7C1019CV33-12VC
51-85033
32-pin 400-Mil Molded SOJ
CY7C1019CV33-12ZC
51-85095
32-pin TSOP II
CY7C1019CV33-12ZXC
51-85095
32-pin TSOP II (Pb-Free)
CY7C1019CV33-12VI
51-85033
32-pin 400-Mil Molded SOJ
CY7C1019CV33-12ZI
51-85095
32-pin TSOP II
CY7C1019CV33-12BVI
51-85150
48-ball VFBGA
CY7C1019CV33-12BVXI
51-85150
48-ball VFBGA (Pb-Free)
CY7C1019CV33-15VC
51-85033
32-pin 400-Mil Molded SOJ
CY7C1019CV33-15ZC
51-85095
32-pin TSOP II
CY7C1019CV33-15ZXC
51-85095
32-pin TSOP II (Pb-Free)
CY7C1019CV33-15VI
51-85033
32-pin 400-Mil Molded SOJ
CY7C1019CV33-15ZI
51-85095
32-pin TSOP II
CY7C1019CV33-15ZXI
51-85095
32-pin TSOP II (Pb-Free)
Commercial
Industrial
Commercial
Industrial
Commercial
Industrial
Package Diagrams
32-pin (400-Mil) Molded SOJ (51-85033)
51-85033-A
51-85033-*B
Document #: 38-05130 Rev. *E
Page 7 of 10
CY7C1019CV33
Package Diagrams (continued)
32-pin TSOP II ZS32 (51-85095)
51-85095-**
Document #: 38-05130 Rev. *E
Page 8 of 10
CY7C1019CV33
Package Diagrams (continued)
48-ball VFBGA (6 x 8 x 1 mm) (51-85150)
BOTTOM VIEW
TOP VIEW
A1 CORNER
Ø0.05 M C
Ø0.25 M C A B
A1 CORNER
Ø0.30±0.05(48X)
2
3
4
5
6
6
5
4
3
2
1
C
C
E
F
G
D
E
2.625
D
0.75
A
B
5.25
A
B
8.00±0.10
8.00±0.10
1
F
G
H
H
A
1.875
A
B
0.75
6.00±0.10
3.75
6.00±0.10
0.10 C
0.21±0.05
0.25 C
0.55 MAX.
B
0.15(4X)
51-85150-*D
C
1.00 MAX
0.26 MAX.
SEATING PLANE
All product and company names mentioned in this document are the trademarks of their respective holders.
Document #: 38-05130 Rev. *E
Page 9 of 10
© Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
CY7C1019CV33
Document History Page
Document Title: CY7C1019CV33 128K x 8 Static RAM
Document Number: 38-05130
REV.
ECN NO.
Issue
Date
Orig. of
Change
**
109245
12/16/01
HGK
New Data Sheet
*A
113431
04/10/02
NSL
AC Test Loads split based on speed.
Description of Change
*B
115047
08/01/02
HGK
Added TSOP II Package and I Temp. Improved ICC limits.
*C
119796
10/11/02
DFP
Updated standby current from 5 nA to 5 mA.
*D
123030
12/17/02
DFP
Updated Truth Table to reflect single Chip Enable option.
*E
419983
See ECN
NXR
Added 48-ball VFBGA Package
Added lead-free parts in Ordering Information Table
Replaced Package Name column with Package Diagram in the Ordering
Information table.
Document #: 38-05130 Rev. *E
Page 10 of 10