1N5391

DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. GPDP-151-1B 1.5 AMP GENERAL PURPOSE SILICON DIODES FEATURES Low cost Low leakage Low forward voltage drop Ë × Á Ö Â ÁÔ ÓÒÑ Ì Ïô’Ã6ÕX5ÏÃÐ ÎÌ Ë ÉÇ ÆÁÅÄ ÏÍ´Ê È~´H°ÂÃÁ MECHANICAL SPECIFICATION SERIES 1N5391 - 1N5399 DO - 15 LL BD (Dia) High current capacity Easily cleaned with freon, alcohol, chlorothene and similar solvents BL Color Band Denotes Cathode RoHS COMPLIANT MECHANICAL DATA Case: JEDEC DO-15 molded epoxy (U/L Flammability Rating 94V-0) Terminals: Plated axial leads Soldering: Per MIL-STD 202 Method 208 guaranteed LL LD (Dia) Sym Polarity: Color band denotes cathode Mounting Position: Any Weight: 0.01 Ounces (0.4 Grams) Minimum In mm 0.240 0.130 1.00 0.028 6.01 3.3 25.4 0.71 BL BD LL LD Maximum In mm 6.48 0.255 0.140 0.034 3.6 0.86 MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS 2HG A 6F 3§©! # ©©! £ ¡ #§1 ©§©& 6! ¤9 £ ¤§§¡ ¡ 3©E  £¥ #$) ! 7¨1¡ % ) " )#& 2©§& 6! ¤9 £ ©©¥ ¤3#3§ ¤9 §¨ ¤¨ ! # 7 D©A @ ! 9 8©0 ©§' 7©§¨ §©"6! ©¥ 54 1¡ % )$1 &! £ CB 7 ¡ ( %¡ ! ¡' %¦ ¤ 21 ¤)!" 3§ ¤! 0 §§§©¨! ¨ ¤( ©§' §§¨ ! ©! #$ £ ¡ ©§" §! ©£ !  ©  £ ©§¥ ¤ £ ¢  #! £& ¨ %¥$ #!  £ ¥ ¤ ¡   ¡ ¨¦ ¡ PARAMETER (TEST CONDITIONS) Series Number SYMBOL RATINGS ¥ ¤¢  ýüûúùø ÷öõôóñ îðïîí éêéèç äãâáà ÚÞÝÜÛ ¡¥¡¡£¡þÿXXXXòXX8iòX8Xiëì8XXiåæXXXXß 6XXiÚ UNITS Œ  Œ Š ‹ Š ˆ‰ ‡ …† „ 8¢u ~X{ z |ƒ‚€ } | Operating and Storage Temperature Range © š –X¢­i¢´i™3” š i³¢­“D© ¢“D²3“ ’•D“ ¤ 5±i¢°¯H¬­D”’D“ iª¢3D¨’¢§ Ž ³² ¶µ³ “ – ² « « – ±” ® ¨š • « ©”“   ¦’Ÿ£  ¢¥ Ž35˜ ŸD3¡ ¢Ÿ› 5¢¢“ —3D¢‘’3 Ž 6iº8H· ¦   ¤ £¢  ž œ š™˜ – •”“  ¼ » ¹ ¸ TT hge d i8fDc … Typical Junction Capacitance (Note 2) C Xx y ba 3` Typical Thermal Resistance, Junction to Ambient (Note 1) R Xv w 6Q R À ¿ Maximum Average DC Reverse Current At Rated DC Blocking Voltage @ T = 25 C @ T = 100 C I °C/W pF °C y Xt u s YW UT XV 6S Maximum Full Cycle Reverse Current @ T = 75 C (Note 1) ¾ ½ I Xq r  5€ Maximum Forward Voltage at 1.5 Amps DC Ù Ø V Xn o p „ƒ ¢‚ I p I m ik l Average Forward Rectified Current @ T = 75 C, Lead length = 0.375 in. (9.5 mm) Peak Forward Surge Current ( 8.3 mSec single half sine wave superimposed on rated load) vt 6ut Maximum Peak Recurrent Reverse Voltage P I V 22 ¡¡21 hh XXg && !¡% X8i jj X8– ——  ¡ ¡  sr 6q Maximum RMS Voltage V 00 !¡) fe XXd $# !!" XX“ •” 8¢ ’‘  ¡ ¡¨ © uw x Maximum DC Blocking Voltage V (( ¡¡(' ™™ XX˜ !¡ X8ˆ ‰‰ X8† ‡‡  ¡ ¡¦ § VOLTS AMPS VOLTS A H9 DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. GPDP-151-2B 1.5 AMP GENERAL PURPOSE SILICON DIODES RATING & CHARACTERISTIC CURVES FOR SERIES 1N5391 - 1N5399 C AB 1.8 Average Forward Current, Io (Amperes) Peak Forward Surge Current (Amperes) 50 100 150 180 1.5 1.2 0.9 0.3 0 0 FIGURE 1. FORWARD CURRENT DERATING CURVE Number of Cycles at 60 Hz FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT d 7c 10 Instantaneous Reverse Current, I (Microamperes) Instantaneous Forward Current (Amperes) 1.0 1.0 0.1 0.1 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE CHARACTERISTICS TJ = 25 oC Capacitance, pF Reverse Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE a b a Y ` Y X W V UT S H10 ˆ† ‡… „ƒ A@‚  A@€ 0 40 ” A“ ’ A‘ rr A7q  A‰ 0.01 0.6 .01 99 A@8 6 75 eh d ˜ g fA™–—• oq n n l p fA@mjki 4 R Ambient Temperature, C I AH 0.6 E AD G F Q @P @s t g p h i 3 w u v f@e yAy@x