MMBT5551-7-F

MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT5401) Ideal for Low Power Amplification and Switching Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 3) Mechanical Data • • • • • • • • • Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) C B E Top View Device Schematic Maximum Ratings @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Value 180 160 6.0 600 Unit V V V mA Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Thermal Characteristics Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: Symbol PD RθJA TJ, TSTG Value 300 417 -55 to +150 Unit mW °C/W °C 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. Halogen and Antimony Free. 3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. MMBT5551 Document number: DS30061 Rev. 11 - 2 1 of 4 www.diodes.com August 2008 © Diodes Incorporated MMBT5551 Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Small Signal Current Gain Current Gain-Bandwidth Product Noise Figure Notes: 4. Short duration pulse test used to minimize self-heating effect. @TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min 180 160 6.0 ⎯ ⎯ 80 80 30 ⎯ ⎯ ⎯ 50 100 ⎯ Max ⎯ ⎯ ⎯ 50 50 ⎯ 250 ⎯ 0.15 0.20 1.0 6.0 250 300 8.0 Unit V V V nA μA nA Test Condition IC = 100μA, IE = 0 IC = 1.0mA, IB = 0 IE = 10μA, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100°C VEB = 4.0V, IC = 0 IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 10V, f = 1.0MHz, IE = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 200μA, RS = 1.0kΩ, f = 1.0kHz hFE VCE(SAT) VBE(SAT) Cobo hfe fT nF ⎯ V V pF ⎯ MHz dB 400 350 PD, POWER DISSIPATION (mW) 1,000 VCE = 5V 250 200 150 100 50 0 0 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature 25 hFE, DC CURRENT GAIN 300 T A = 150°C 100 TA = 25°C TA = -50°C 10 1 100 10 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current 1 MMBT5551 Document number: DS30061 Rev. 11 - 2 2 of 4 www.diodes.com August 2008 © Diodes Incorporated MMBT5551 VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 0.15 0.14 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.13 0.12 0.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 1 100 10 1,000 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.0 VCE = 5V 0.9 TA = -50°C 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 TA = 150°C T A = 25°C 10 1 100 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1,000 fT, GAIN-BANDWIDTH PRODUCT (MHz) VCE = 5V 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Gain-Bandwidth Product vs. Collector Current Ordering Information Part Number MMBT5551-7-F Notes: (Note 5) Case SOT-23 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K4N = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) K4N Date Code Key Year 1998 Code J Month Code Jan 1 1999 K 2000 L Feb 2 2001 M Mar 3 2002 N 2003 P Apr 4 2004 R May 5 2005 S YM 2006 T Jun 6 2007 U Jul 7 2008 V 2009 W Aug 8 2010 X Sep 9 2011 Y 2012 Z Oct O 2013 A Nov N 2014 B 2015 C Dec D MMBT5551 Document number: DS30061 Rev. 11 - 2 3 of 4 www.diodes.com August 2008 © Diodes Incorporated MMBT5551 Package Outline Dimensions A BC H K D J F G L M K1 SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z C Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. MMBT5551 Document number: DS30061 Rev. 11 - 2 4 of 4 www.diodes.com August 2008 © Diodes Incorporated