MMDT5551-7-F

MMDT5551 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (MMDT5401) Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3) "Green" Device (Note 4 and 5) A C2 B1 E1 SOT-363 Dim BC Min 0.10 1.15 2.00 0.30 1.80 — 0.90 0.25 0.10 0° Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8° A B C D F M E2 B2 C1 Mechanical Data • • • • • • • • • Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: K4N, See Page 3 Ordering & Date Code Information: See Page 3 Weight: 0.006 grams (approximate) K G H 0.65 Nominal H J K L M α J D F L All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO (Note 1) (Note 1, 2) (Note 1) IC Pd RθJA Tj, TSTG Value 180 160 6.0 200 200 625 -55 to +150 Unit V V V mA mW °C/W °C Characteristic Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation. 3. No purposefully added lead. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30172 Rev. 8 - 2 1 of 4 www.diodes.com MMDT5551 © Diodes Incorporated Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 6) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Small Signal Current Gain Current Gain-Bandwidth Product Noise Figure Notes: @TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min 180 160 6.0 ⎯ ⎯ 80 80 30 ⎯ ⎯ ⎯ 50 100 ⎯ Max ⎯ ⎯ ⎯ 50 50 ⎯ 250 ⎯ 0.15 0.20 1.0 Unit V V V nA μA nA Test Condition IC = 100μA, IE = 0 IC = 1.0mA, IB = 0 IE = 10μA, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100°C VEB = 4.0V, IC = 0 IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 10V, f = 1.0MHz, IE = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 200μA, RS = 1.0kΩ, f = 1.0kHz hFE VCE(SAT) VBE(SAT) ⎯ V V Cobo hfe fT NF 6.0 250 300 8.0 pF ⎯ MHz dB 6. Short duration pulse test used to minimize self-heating effect. 200 PD, POWER DISSIPATION (mW) 0.15 0.14 IC IB = 10 150 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.13 0.12 0.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 1 T A = -50°C TA = 25°C TA = 150°C 100 50 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs. Ambient Temperature 200 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current DS30172 Rev. 8 - 2 2 of 4 www.diodes.com MMDT5551 © Diodes Incorporated 1,000 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) 10 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs. Collector Current 100 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current 100 hFE, DC CURRENT GAIN 100 10 1 1 1,000 fT, GAIN BANDWIDTH PRODUCT (MHz) 100 10 1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs. Collector Current 100 Ordering Information Device MMDT5551-7-F Notes: 7. (Note 7) Packaging SOT-363 Shipping 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K4N YM Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 DS30172 Rev. 8 - 2 YM K4N 2002 N Apr 4 K4N = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 2003 P May 5 2004 R Jun 6 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D 3 of 4 www.diodes.com MMDT5551 © Diodes Incorporated IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30172 Rev. 8 - 2 4 of 4 www.diodes.com MMDT5551 © Diodes Incorporated