MMDT5551

SPICE MODEL: MMDT5551 MMDT5551 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · · Epitaxial Planar Die Construction Complementary PNP Type Available (MMDT5401) Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3) E2 B2 C1 C2 A B1 E1 SOT-363 Dim A BC Min 0.10 1.15 2.00 0.30 1.80 ¾ 0.90 0.25 0.10 0° Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8° B C D F M Mechanical Data · · · · · · · · · K G H 0.65 Nominal H J K L M a Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking (See Page 2): K4N Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approx.) E2 B2 C1 C2 B1 E1 J D F L All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG Value 180 160 6.0 200 200 625 -55 to +150 Unit V V V mA mW °C/W °C Characteristic Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation. 3. No purposefully added lead. DS30172 Rev. 7 - 2 1 of 4 www.diodes.com MMDT5551 ã Diodes Incorporated Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Small Signal Current Gain Current Gain-Bandwidth Product Noise Figure @ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min 180 160 6.0 ¾ ¾ 80 80 30 ¾ ¾ ¾ 50 100 ¾ Max ¾ ¾ ¾ 50 50 ¾ 250 ¾ 0.15 0.20 1.0 Unit V V V nA mA nA Test Condition IC = 100mA, IE = 0 IC = 1.0mA, IB = 0 IE = 10mA, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100°C VEB = 4.0V, IC = 0 IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 10V, f = 1.0MHz, IE = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 200mA, RS = 1.0kW, f = 1.0kHz hFE VCE(SAT) VBE(SAT) ¾ V V Cobo hfe fT NF 6.0 250 300 8.0 pF ¾ MHz dB Ordering Information Device (Note 5) Packaging SOT-363 Shipping 3000/Tape & Reel MMDT5551-7-F Notes: 4. Short duration test pulse used to minimize self-heating effect. 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K4N YM Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 2001 M Apr 4 YM K4N 2002 N May 5 K4N = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30172 Rev. 7 - 2 2 of 4 www.diodes.com MMDT5551 200 0.15 0.14 IC = 10 IB VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) 0.13 0.12 0.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 TA = -50°C 1 10 100 1000 TA = 25°C TA = 150°C 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current 1000 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) VCE = 5V TA = 150°C VCE = 5V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 TA = 150°C TA = 25°C TA = -50°C hFE, DC CURRENT GAIN (NORMALIZED) 100 TA = 25°C TA = -50°C 10 1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current 100 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V 100 10 1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs. Collector Current 100 DS30172 Rev. 7 - 2 3 of 4 www.diodes.com MMDT5551 IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of Diodes Incorporated. DS30172 Rev. 7 - 2 4 of 4 www.diodes.com MMDT5551