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BYW35

BYW35

  • 厂商:

    EIC

  • 封装:

  • 描述:

    BYW35 - FAST RECOVERY RECTIFIER DIODES - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
BYW35 数据手册
BYW32 - BYW36 PRV : 200 - 600Volts Io : 2.0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free FAST RECOVERY RECTIFIER DIODES D2 0.161 (4.1) 0.154 (3.9) 1.00 (25.4) MIN. 0.284 (7.2) 0.268 (6.8) MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Repetitive Peak Reverse Voltage Maximum Maximum RMS voltage Maximum DC blocking voltage Maximum Average Forward Current 0.375” (9.5mm) Lead Length at Ta=55°C Maximum Peak Forward Surge Current 10ms single half sine-wave superimposed on rated load Maximum Instantaneous Forward Voltage at 2.0A Maximum DC reverse current at rated DC blocking voltage Typical Reverse Recovery Time (1) Thermal Resistance - Junction to Ambient (2) Junction Temperature Range Storage Temperature Range SYMBOL BYW32 BYW33 BYW34 BYW35 BYW36 VRRM VRMS VDC IF(AV) IFSM VF IR Trr RθJA TJ TSTG 200 140 200 300 210 300 400 280 400 2.0 40 1.2 5.0 200 100 - 65 to + 175 - 65 to + 200 500 350 500 600 420 600 UNIT V V V A A V µA µs C/W °C °C Notes : (1) Test Conditions : IF = 0.5 A to IR = 1 A ; measured at Irr = 0.25 A (2) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted Page 1 of 2 Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( BYW32 - BYW36 ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.5 A D.U.T. 50 Vdc (approx) 1Ω PULSE GENERATOR ( NOTE 2 ) OSCILLOSCOPE ( NOTE 1 ) 0 - 0.25 A Trr + - 1.0 A 1 cm SET TIME BASE FOR 50/100 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 2.0 50 FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 1.6 40 10 ms SINGLE HALF SINE WAVE 1.2 30 0.8 20 Ta = 25 °C 0.4 10 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 TIE-POINT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz 10 REVERSE CURRENT, MICROAMPERES FIG.4 - TYPICAL FORWARD CHARACTERISTICS FIG.5 - TYPICAL REVERSE CHARACTERISTICS 10 TJ = 100 °C FORWARD CURRENT, AMPERES 1 Pulse Width = 300 µs 1% Duty Cycle 1.0 0.1 TJ = 25 °C 0.1 TJ = 25 °C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 02 : March 25, 2005
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