15 10V 12 4V 6V 3V 3.5V
10
8
Vds=5V
Id (A)
9
6
Id(A)
6 Vgs=2.5V 3 2 4 125°C 25°C 0 0 2 3 4 Vds (Volts) Fig 1: On-Region Characteristics 1 5 0 0 0.5 1.5 2 2.5 3 Vgs(Volts) Figure 2: Transfer Characteristics 1 3.5
250
1.8
270
Vgs=10V Id=1.6A
Normalized On-Resistance
Vgs=2.5V 200
1.6 1.4 1.2 1 0.8
1.7
Rds(on) (m: )
150 Vgs=4.5V 100 Vgs=10V 50 0 2 4 6 8 10 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 180 Id=1.6A 160
0
25
50
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01
3 3.6 0.4 Vgs=4.5V 1.2 Id=1.5A 2.8 Vgs=2.5V 2.1 3 Id=1A 17.4 21 2.1 9.1 11 75 100 125 150 175 3.4 4
Rds(on) (m: )
140
Is (A)
125°C 120 100 80 60 0 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0
125°C 25°C
25°C
0.2
0.4
0.6
0.8
1.0
1.2
Vsd (Volts) Figure 6: Body-Diode Characteristics
5 Vds=15V Id=1.6A 4
400 350
Capacitance (pF)
300 Ciss 250 200 150 100 50 Coss Crss
Vgs (Volts)
3
2
1
0 0 0.5 1.5 2 2.5 3 Qg (nC) Figure 7: Gate-Charge Characteristics 1 3.5
0 0 15 20 25 Vds (Volts) Figure 8: Capacitance Characteristics 5 10 30
270
100.0 Tj(max)=150°C Ta=25°C 20 Tj(max)=150°C Ta=25°C
1.7 3.6
15 10.0
Id (Amps)
Power (W)
100Ps 1ms
Rds(on) limited 0.1s
10Ps
10
1.0 1s 10s 0.1 0.1 DC 1 10ms 10 100
5
0 0.001
13
0.01
Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=360°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd 0.1 Ton T Single Pulse
0.01 0.00001
0.0001
0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
0.01
100
1000
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