ELM24603HA-S

30 10V 25 20 7V 5V 6V 20 Vds=5V 15 Id (A) Id (A) 125°C 10 25°C 5 15 4.5V 10 5 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 80 Vgs=4V 3.5V 0 2 2.5 3 3.5 4 4.5 5 Vgs(Volts) Figure 2: Transfer Characteristics 2.2 Rds(on) (m:) 70 Vgs=4.5V 60 Vgs=10V 50 Normalized On-Resistance 2 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature Vgs=4.5V,6A Vgs=10V, 12A 40 0 4 8 12 16 20 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 160 140 Id=12A 125°C 100 80 25°C 60 1.0E+01 1.0E+00 125°C 1.0E-01 Rds(on) (m:) 120 Is (A) 1.0E-02 1.0E-03 1.0E-04 25°C 40 4 6 8 10 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Vsd (Volts) Figure 6: Body-Diode Characteristics Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 700 10 8 Vds=30V Id=12A 600 Ciss 6 4 2 Capacitance (pF) 500 400 300 Coss 200 100 Crss Vgs (Volts) 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 Tj(max.)=175°C, Ta=25°C 10Ps 10.0 Rds(on) limited 1ms 10ms 1.0 DC 100Ps 0 0 15 20 25 Vds (Volts) Figure 8: Capacitance Characteristics 5 10 30 200 160 Tj(max.)=175°C Ta=25°C Power (W) Id (Amps) 120 80 40 0 0.0001 0.1 0.1 1 10 100 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZTjc Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Tc+Pdm.ZTjc.RTjc RTjc=7.5°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 14 25 Id(A), Peak Avalanche Current 10 8 6 4 Ta=25°C 2 0 0.00001 Power Dissipation (W) 0.001 12 ta L ˜ Id BV  V dd 20 15 10 5 0 0.0001 0 25 50 75 100 125 150 175 Time in avalanche, ta (s) Figure 12: Single Pulse Avalanche capability Tcase (°C) Figure 13: Power De-rating (Note B) 14 12 50 Ta=25°C 40 Current rating Id(A) 10 Power (W) 8 6 4 30 20 10 2 0 0 25 50 75 100 125 150 175 Tcase (°C) Figure 14: Current De-rating (Note B) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 ZTja Normalized Transient Thermal Resistance 1 D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=60°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd Single Pulse Ton 0.001 0.00001 T 100 1000 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 30 -10V 25 20 -7V -6V -5V -4.5V 15 Vgs=-4V 10 5 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 220 200 -3.5V -3V 10 Vds=-5V 8 -Id (A) -Id (A) 6 125°C 4 25°C 2 0 0 1 2 3 4 5 -Vgs (Volts) Figure 2: Transfer Characteristics 2 Rds(on) (m:) 180 160 140 Vgs=-4.5V Normalized On-Resistance 1.8 1.6 1.4 1.2 1 0.8 0 25 50 Vgs=-10V Id=-12A Vgs=-4.5V Id=-6A Vgs=-10V 120 100 80 15 20 25 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 5 10 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 300 Id=-12A 250 1.0E+01 1.0E+00 1.0E-01 Rds(on) (m:) 125°C -Is (A) 200 125°C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 25°C 150 25°C 100 50 2 4 6 8 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -Vsd (Volts) Figure 6: Body-Diode Characteristics 10 Vds=-30V Id=-12A Capacitance (pF) 1200 Ciss 1000 800 600 400 Coss 200 0 0 8 12 -Qg (nC) Figure 7: Gate-Charge Characteristics 4 16 0 5 10 15 20 25 -Vds (Volts) Figure 8: Capacitance Characteristics 30 Crss 8 -Vgs (Volts) 6 4 2 0 100.0 Tj(max.)=175°C, Ta=25°C 10Ps -Id (Amps) Power (W) 10.0 Rds(on) limited 100Ps 200 160 Tj(max.)=175°C Ta=25°C 1ms 120 10ms 1.0 DC 80 40 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZTjc Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Tc+Pdm.ZTjc.RTjc RTjc=4°C/W 1 10 100 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 14 40 -Id(A), Peak Avalanche Current 12 Power Dissipation (W) ta L˜ Id BV  Vdd 30 10 20 8 Ta=25°C 10 6 0.00001 0 0.0001 0.001 0 25 50 75 100 125 150 175 Tcase (°C) Figure 13: Power De-rating (Note B) Time in avalanche, ta (s) Figure 12: Single Pulse Avalanche capability 14 12 60 50 40 Ta=25°C Current rating -Id (A) 10 8 6 4 2 0 0 25 50 75 100 125 150 175 Tcase (°C) Figure 14: Current De-rating (Note B) Power (W) 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 ZTja Normalized Transient Thermal Resistance 1 D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd 0.01 Single Pulse Ton 0.001 0.00001 T 100 1000 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)