EM488M3244VBA-8F

256Mb SDRAM Ordering Information EM 48 8M 32 4 4 V B A – 8 F EOREX Logo F: PB free package Power Blank : Standard L : L ow power I : Industrial EDO/FPM D-RAMBUS DDRSDRAM DDRSGRAM SGRAM SDRAM : : : : : : 40 41 42 43 46 48 Density 16M : 1 6 Mega Bits 8M : 8 Mega Bits 4M : 4 Mega Bits 2M : 2 Mega Bits 1M : 1 Mega Bit Organization 8 : x8 9 : x9 1 6 : x16 1 8 : x18 3 2 : x32 Refresh 1 : 1 K, 8 : 8K 2 : 2K, 6 :16K 4 : 4K Bank 2 : 2Bank 6 : 1 6Bank 4 : 4Bank 3 : 32Bank 8 : 8Bank Min Cycle Time ( Max Freq.) -5 : 5 ns ( 200MHz ) -6 : 5 ns ( 167MHz ) -7 : 7 ns ( 143MHz ) -75 : 7.5ns ( 133MHz ) -8 : 8 ns ( 125MHz ) -10 : 1 0ns ( 100MHz ) Revision A : 1st B : 2nd C : 3rd D :4th G: for VGA version only Interface V: 3.3V R: 2.5V Package C: CSP B: FBGA T: TSOP Q: TQFP P: PQFP ( QFP ) L: L QFP URL: http://www.eorex.com Email: sales@eorex.com Rev.01 1/33 256Mb SDRAM 256Mb( 4Banks ) Synchronous DRAM EM488M3244VBA (8Mx32) Description The EM488M3244VBA is Synchronous Dynamic Random Access Memory ( SDRAM ) organized as 2Meg words x 4 banks x 32 bits. All inputs and outputs are synchronized with the positive edge of the clock . The 256Mb SDRAM uses synchronized pipelined architecture to achieve high speed data transfer rates and is designed to operate in 3.3V low power m emory system. It also provides auto refresh with power saving / down mode. All inputs and outputs voltage levels are compatible with LVTTL. Features • Fully synchronous to positive clock edge • Clock frequency :125MHz(max) • Single 3.3V +/- 0.3V power supply • LVTTL compatible with multiplexed address • Programmable Burst Length ( B/ L ) - 1,2,4,8 or full page • Programmable CAS Latency ( C/ L ) - 2 or 3 • Data Mask ( DQM ) for Read/Write masking • Programmable wrap sequential - Sequential ( B/ L = 1/2/4/8/full page ) - Interleave ( B/ L = 1/2/4/8 ) • Burst read with single-bit write operation • All inputs are sampled at the positive rising edge of the system clock. • Auto refresh and self refresh • 4,096 refresh cycles / 64ms (15.6us/row) • FBGA package is lead free solder (Sn-Ag-Cu) * EOREX reserves the right to change products or specification without notice. Rev.01 2/33 256Mb SDRAM Pin Assignment ( Top View ) 90-ball FBGA 1 2 3 4 5 6 7 8 9 A B C D E F G H J K L M N P R OOO DQ26 DQ24 VSS O VDD O DQ23 O DQ21 OOO DQ28 VDDQ VSSQ O VDDQ O VSSQ O DQ19 OOO VSSQ DQ27 DQ25 O DQ22 O DQ20 O VDDQ OOO VSSQ DQ29 DQ30 O DQ17 O DQ18 O VDDQ OOO VDDQ DQ31 NC O NC O DQ16 O VSSQ OOO VSS DQM3 A3 O A2 O DQM2 O VDD OOO A4 A5 A6 O A10 O A0 O A1 OOO A7 A8 NC O NC O BA1 O A11 OOO CLK CKE A9 O BA0 O /CS O /RAS OOO DQM1 NC NC O /CAS O /WE O DQM0 OOO VDDQ DQ8 VSS O VDD O DQ7 O VSSQ OOO VSSQ DQ10 DQ9 O DQ6 O DQ5 O VDDQ OOO VSSQ DQ12 DQ14 O DQ1 O DQ3 O VDDQ OOO DQ11 VDDQ VSSQ O VDDQ O VSSQ O DQ4 OOO DQ13 DQ15 VSS O VDD O DQ0 O DQ2 (Top view) Rev.01 3/33 256Mb SDRAM Pin Descriptions ( Simplified ) Pin CLK /CS CKE Name System Clock Chip select Clock Enable Pin Function Master Clock Input(Active on the Positive rising edge) Selects chip when active Activates the CLK when “H” and deactivates when “L”. CKE should be enabled at least one cycle prior to new command. Disable input buffers for power down in standby. Row address (A0 to A11) is determined by A0 to A11 level at the bank active command cycle CLK rising edge. CA(CA0 to CA8) is determined by A0 to A8 level at the read or write command cycle CLK rising edge. And this column address becomes burst access start address. A10 defines the pre-charge mode. When A10 = High at the pre-charge command cycle, all banks are pre-charged. But when A10 = Low at the pre-charge command cycle, only the bank that is selected by BA is pre-charged. Selects which bank is to be active. A0 ~ A11 Address BA0~BA1 Bank Address /RAS Row address strobe Latches Row Addresses on the positive rising edge of the CLK with /RAS “L”. Enables row access & pre-charge. Latches Column Addresses on the positive rising edge of the CLK with /CAS low. Enables column access. Latches Column Addresses on the positive rising edge of the CLK with /CAS low. Enables column access. /CAS Column address strobe /WE Write Enable DQM0 ~ DQM3 Data input/output Mask DQM controls I/O buffers. DQ0 ~ 31 Data input/output DQ pins have the same function as I/O pins on a conventional DRAM. VDD/VSS VDDQ/VSSQ NC Power supply/Ground Power supply/Ground No connection VDD and VSS a re power supply pins for internal circuits. VDDQ a nd VSSQ a re power supply pins for the output buffers. This pin is recommended to be left No Connection on the device. Rev.01 4/33 256Mb SDRAM Block Diagram A0 A1 A2 A3 Row Add. Buffer Auto/Self Refresh Counter DQM Row Dec oder A4 A5 A6 A7 A8 A9 A10 A11 BA0 BA1 Address Register Memory Array Write DQM Control Data In S/A & I/O gating Col. Decoder Data Out DQi Col. Add. Buffer Read DQM Control Mode Register Set Col. Add. Counter DQM /WE DQM Burst Counter Timing Register CLK /CLK CKE /CS /RAS /CAS Rev.01 5/33 256Mb SDRAM Commands Mode register set command ( /CS, /RAS, / CAS, /WE = Low ) CLK /CS /RAS /CAS /WE BA A10 CKE Add ‘H’ The EM488M3244VBA have a mode register that defines how the device operates. In this command, A0 through BA are the data input pins. After power on, the m ode register set command must be executed to initialize the device. The mode register can be set only w hen all banks are in idle state. The EM488M3244VBA, c annot accept any other commands,only during 2CLK c an following this command. ( Figure. 1 Mode register set command ) Active command ( /CS, /RAS = Low , /CAS, /WE = High ) CLK /CS /RAS /CAS /WE BA A10 CKE Add ‘H’ Row Row The EM488M3244VBA have 4 banks, each with 4,096 rows. This command activates the bank selected by BA and a row address selected by A0 through A11.This c ommand corresponds to a conventional DRAM’s /RAS falling. ( Figure. 2 Row address strobe and bank activate command ) Rev.01 6/33 256Mb SDRAM Precharge command ( /CS, /RAS, /WE = Low , / CAS = High ) CLK /CS /RAS /CAS /WE BA A10 CKE Add ‘H’ This command begins precharge operation of the bank s elected by. When A10 is high,all banks are precharged, regardless of. When A10 is low,only the bank selected by BA is precharged. ( Figure. 3 Precharged command ) Write command ( /CS, /CAS, /WE = Low, /RAS = High ) CLK /CS /RAS /CAS /WE BA A10 CKE Add ‘H’ Column If the mode register is in the burst write mode, this c ommand sets the burst start address given by the c olumn address to begin the burst write operation. The first write data in burst mode can input with this c ommand with subsequent data on following clicks. ( Figure. 4 Column address and write command ) Rev.01 7/33 256Mb SDRAM Read command ( /CS, /CAS = Low , / RAS, /WE = High ) CLK /CS /RAS /CAS /WE BA A10 CKE Add ‘H’ Column Read data is available after /CAS latency requirements have been met. This command sets the burst start address given by the column. ( Figure. 5 Column address and read command ) Auto refresh command ( /CS, /RAS, /CAS = Low, /WE, CKE = High ) CLK /CS /RAS /CAS /WE BA A10 CKE Add ‘H’ This command is a request to begin the CBR refresh operation. The refresh address is generated internally. Before Executing CBR refresh, all banks must be precharged. After this cycle, all banks will be in the idle (Precharged ) s tate and ready for a row activate command. During tRC period ( from refresh command to refresh or activate c ommand ), the EM488M3244VBA cannot accept any other command. ( Figure. 6 Auto refresh command ) Rev.01 8/33 256Mb SDRAM Self refresh entry command ( /CS, / RAS , /CAS, CKE = Low , /WE = High ) CLK /CS /RAS /CAS /WE BA A10 CKE Add After the command execution, self refresh operation c ontinues while CKE remains low. When CKE goes high, the memory exits the self refresh mode. During s elf refresh mode, refresh interval and refresh operation are performed internally, so there before is no need for external control. Before executing self refresh, both banks must be precharged. ( Figure. 7 Self refresh entry command ) Burst stop command ( /CS, /WE = Low, /RAS, /CAS = High ) CLK /CS /RAS /CAS /WE BA A10 CKE Add ‘H’ This command can stop the current burst operation. ( Figure. 8 Burst stop command in full page mode ) Rev.01 9/33 256Mb SDRAM No operation ( /CS = Low, / RAS , /CAS, /WE = High ) CLK /CS /RAS /CAS /WE BA A10 CKE Add ‘H‘ This command is not execution command so there is no operations begin or terminate by this command. ( Figure. 9 No operation ) Initialization The synchronous DRAM is initialized in the power-on sequence according to the following: 1. CLK,CKE,/CS,DQM,DQ pin keep low till power stabilizes, and the CLK pin is stabilized whin 100us after power stabilizes before the following initialization s equence. 2. To stabilize internal circuits, when power is applied, a 200us or longer pause m ust precede any signal toggling. 3. After the pause, all banks must be precharged using the precharged c ommand ( The precharge all banks command is convenient ). 4. Once the precharge is completed and the minimum tRP is satisfied, the m ode register can be programmed. 5. Two or more Arto refresh must be performed. Remanks: 1. The sequence of Mode register programming and Refresh above may be transposed. 2. CKE and DQM must be held high until the precharge command is issued to ensure data-bus Hi-Z. Rev.01 10/33 256Mb SDRAM Programming the Mode Register The mode register is programmed by the Mode register set command using address bits BA through A0 as data inputs. The register retains data until it is reprogrammed or the device loses power. Options BA through A7 /CAS Latency A6 through A4 Wrap type A3 Burst Length A2 through A0 Following mode register programming, no command can be issued before at least 2 C LK elapsed. /CAS Latency /CAS Latency is the most critical of the parameters begin set. It tells the device how m any clocks must elapse before the data will be available. Burst Length Burst length is the number of the words that will be output or input in a write cycle. After a read burst is completed, the output bus will become Hi-Z. The burst length is programmable as 1,2,4,8 or full page. Wrap Type ( Burst Sequence ) The wrap type specifies the order in which the burst data will be addressed. This order is programmable as either Sequence or Interleave. The method chosen will depend on the type of CPU in the system. Some microprocessor cache systems are optimized for sequential addressing and others for interleaved. Rev.01 11/33 256Mb SDRAM Simplified State Diagram Self Refresh LF SE LF SE it Ex Mode Register Set MRS IDLE REF CBR Refresh CK E CK E Wr ite Row Active ad Re w it w it h A CT Power Down CKE BS Re T ad CKE Read Active Power Down WRITE Suspend CKE CKE Wr ite h WRITE Read Wr ite READ CKE READ Suspend CKE PR E WRITEA Suspend CKE WRITEA E PR READA CKE CKE CKE READA Suspend POWER ON Pr ec har ge Precharge Manual Input A utomatic Sequenc e Rev.01 12/33 256Mb SDRAM Address Input for Mode Register Set BA0/1 A10/11 A9 A8 A7 A6 A5 A4 A3 BT A2 A1 A0 Operation Mode CAS Latency Burst Length Sequential 1 2 4 8 Reserved Reserved Reserved Full Page Burst Length Interleave A2 1 0 2 0 4 0 8 0 Reserved 1 Reserved 1 Reserved 1 Reserved 1 A1 0 0 1 1 0 0 1 1 A0 0 1 0 1 0 1 0 1 Burst Type Sequential Interleave A3 0 1 CAS Latency Reserved Reserved 2 3 Reserved Reserved Reserved Reserved A6 0 0 0 0 1 1 1 1 A5 0 0 1 1 0 0 1 1 A4 0 1 0 1 0 1 0 1 BA0/1 A10/11 0 0 0 0 A9 0 1 A8 0 0 A7 0 0 Operation Mode Normal Burst read with Single-bit Write Rev.01 13/33 256Mb SDRAM Burst Type ( A3 ) Burst Length 2 4 8 Full Page * A2 A1 A0 XX0 XX1 X0 0 X0 1 X1 0 X1 1 000 001 010 011 100 101 110 111 nnn Sequential Addressing 01 10 0123 1230 2301 3012 01234567 12345670 23456701 34567012 45670123 56701234 67012345 70123456 Cn Cn+1 Cn+2 …... Interleave Addressing 01 10 0123 1032 2301 3210 01234567 10325476 23016745 32107654 45670123 54761032 67452301 76543210 - * Page length is a function of I/O organization and column addressing x32 (CA0 ~ CA8) : Full page = 512 bits Rev.01 14/33 256Mb SDRAM Precharge The precharge command can be issued anytime after tRAS ( m in.) is satisfied. Soon After the precharge command is issued, precharge operation performed and the s ynchronous DRAM enters the idle state after tRP is satisfied. The parameter tRP is the time required to perform the precharge. The earliest timing in a read cycle that a precharege command can be issued without losing any data in the burst is as follows. It is depends on the /CAS latency and clock cycle time. 0 1 2 3 4 5 6 7 8 CLK Command ( CL= 2 ) R ead PRE DQ ( CL= 2 ) Q1 Q2 Q3 Q4 Hi-Z Command ( CL= 3 ) R ead PRE DQ ( CL= 3 ) Q1 Q2 Q3 Q4 Hi-Z BL=4 In order to write all data to the memory cell correctly, the asynchronous parameter tDPL m ust be satisfied. The tDPL (min.) specification defines the eariliest time that a precharge command can be issued. Minimum number of clocks is calculated by dividing tDPL(min.) with clock cycle time. In a word, the precharge command can be issued relative to reference clock that indicates the last data word is valid. The minus in the following table means clocks before the reference and the plus means time after the reference. /CAS latency 2 3 Read -1 -2 Write + tDPL( min.) + tDPL ( min.) Rev.01 15/33 256Mb SDRAM Auto precharge D uring a read or write command cycle, A10 controls whether auto precharge is s elected. A10 high in the Read or Write command ( Read with Auto precharge c ommand or Write with Auto precharge command ), auto precharge is selected and begins automatically. The tRAS m ust be satisfied with a read with auto precharge or a write with auto precharge operation. In addition, the next activate command to the bank being precharged cannot be executed until the precharge cycle ends. In read c ycle, once auto precharge has started , an activate command to the bank can be issued after tRP has been satisfied Read with Auto Precharge D uring a read cycle, the auto precharge begins same as ( /CAS latency of 2 ) or one c lock earlier ( /CAS latency of 3 ) the last data word output. 0 1 2 3 4 5 6 7 8 CLK Command ( CL= 2 ) Read AP Auto precharge starts DQ ( CL= 2 ) Q1 Q2 Q3 Q4 H i-Z Command ( CL= 3 ) Read AP Auto precharge starts DQ ( CL= 3 ) Q1 Q2 Q3 Q4 H i-Z BL=4 ( tRAS must be satisfied ) Remanks: Read AP means Read with auto precharge Rev.01 16/33 256Mb SDRAM Write with Auto Precharge During write cycle, the auto precharge starts at the timing that is equal to the value of the tDPL( min.) after the last dataword input to the device. 0 1 2 3 4 5 6 7 8 CLK Command ( CL= 2 ) Write AP Auto precharge starts DQ ( CL= 2 ) D1 D2 D3 D4 tDPL( min. ) H i-Z Command ( CL= 3 ) Write AP Auto precharge starts DQ ( CL= 3 ) D1 D2 D3 D4 tDPL( min. ) H i-Z BL=4 ( tRAS must be satisf ied ) Remanks: Write AP means Write with auto precharge In summary, the auto precharge begins relative to a reference clock that indicates the last data word is valid. In the following table minus means clocks before the reference ,plus means after the reference. /CAS latency 2 3 Read -1 -2 Write + tDPL( min.) + tDPL ( min.) Rev.01 17/33 256Mb SDRAM Read / Write command interval Read to read command interval D uring a read cycle, when new Read command is issued,it will be effective after / CAS latency, even if the previous read operation does not completed. Read will be interrupted by another Read. The interval between the commands is 1 cycle m inimum. Each Read command can be issued in every clock without any restriction. 0 1 2 3 4 5 6 7 8 CLK Command Read A Read B DQ 1 Cycle QA1 QB1 QB2 QB3 QB4 H i-Z B L = 4, C L = 2 Write to write command interval During a write cycle, when new write command is issued, the previous burst will terminate and the new burst will begin with a new write command. Write will be interrupted by another Write. The interval between the commands is minimum 1 c ycle. Each write command can be issued in every clock without any restriction. 0 1 2 3 4 5 6 7 8 CLK Command Write A Write B DQ DA1 DB1 D B2 D B3 D B4 H i-Z 1 Cycle B L = 4, C L = 2 Rev.01 18/33 256Mb SDRAM Write to read command interval Write and Read command interval is also 1 cycle. Only the write data before read c ommand will be written. The data bus must be Hi-Z at least one cycle prior to the first D OUT. 0 1 2 3 4 5 6 7 8 CLK Command ( CL = 2 ) Write A Read B DQ ( CL = 2 ) DA1 H i-Z QB1 QB2 QB3 QB4 Command ( CL = 3 ) Write A Read B DQ ( CL = 3 ) DA1 H i-Z QB1 QB2 QB3 QB4 BL=4 Rev.01 19/33 256Mb SDRAM Read to write command interval During a read cycle, Read can be interrupt by Write. The read and write command interval is 1 cycle minimum. There’s a restriction to avoid data conflict. The data bus m ust be Hi-Z using DQM before write. 0 1 2 3 4 5 6 7 8 9 CLK Command DQM Read Write DQ H i-Z D1 D2 D3 D3 BL=4 Read can be interrupted by Write. DQM must be high at least 3 clicks prior to the w rite command. 0 1 2 3 4 5 6 7 8 9 CLK Command ( CL = 2 ) Read Write DQM DQ ( CL = 2 ) Q1 Q2 Q3 H i-Z is necessar y D1 D2 D3 Command ( CL = 3 ) DQM DQ ( CL = 3 ) Read Write Q1 Q2 H i-Z is necessar y D1 D2 D3 BL=8 Rev.01 20/33 256Mb SDRAM Burst terminate There are two ways to terminate a burst operation other than using a Read or a Write c ommand. One is the burst stop command and the other is the precharge command. Burst stop command During a read cycle,when the burst stop command is issued, the burst read are terminated and the data bus goes to Hi-Z after the /CAS latency from the burst stop c ommand. 0 1 2 3 4 5 6 7 8 9 CLK Command Burst Stop Read DQ ( CL = 2 ) Q1 Q2 Q3 H i-Z DQ ( CL = 3 ) Q1 Q2 Q3 H i-Z B L = don’t care During a write cycle,when the burst stop command is issued, the burst write data are terminated and the data bus goes to Hi-Z at the same clock with the burst stop c ommand. 0 1 2 3 4 5 6 7 8 9 CLK Command Burst Stop Write DQ ( CL = 2 /3 ) D1 D2 D3 D4 H i-Z B L = don’t care Rev.01 21/33 256Mb SDRAM Precharge Termination Precharge Termination in READ Cycle During a read cycle, the burst read operation is terminated by a precharge command. W hen the precharge command is issued, the burst read operation is terminated and precharge starts. The same banks can be activated again after tRP from the precharge command. To issue a precharge command , tRAS must be satisfied. When /CAS Latency is 2, the read data will remain valid until two clocks after the precharge command. 0 1 2 3 4 5 6 7 8 9 CLK Precharge Command R ead Activ e DQ Q1 Q2 Q3 Q4 t RP H i-Z B L = don’t care , CL= 2 W hen /CAS Latency is 3, the read data will remain valid until two clocks after the precharge command. 0 1 2 3 4 5 6 7 8 9 CLK Command Precharge R ead Activ e DQ Q1 Q2 Q3 t RP Q4 H i-Z B L = don’t care , CL= 3 Rev.01 22/33 256Mb SDRAM Precharge Termination in Write Cycle During a write cycle, the burst write operation is terminated by a precharge c ommand. When the precharge command is issued, the burst write operation is terminated and precharge starts. The same banks can be activated again after tRP from the precharge command. To issue a precharge command , tRAS must be s atisfied. When /CAS Latency is 2, the write data written prior to the precharge command will be correctly stored. However, invalid data may be written at the same clock as the precharge command. In order to avoid this situation, DQM must be high at the same c lock as the precharge command. This will mask the invalid data. 0 1 2 3 4 5 6 7 8 9 CLK Precharge Command DQM DQ Write Activ e D1 D2 D3 D4 D5 t RP Hi-Z B L = don’t care, CL= 2 ( tRAS must be satisfied ) When /CAS Latency is 3, the write data written prior to the precharge command will be correctly stored. However, invalid data may be written at the same clock as the precharge command. In order to avoid this situation, DQM must be high at the same c lock as the precharge command. This will mask the invalid data. 0 1 2 3 4 5 6 7 8 9 CLK Precharge Command DQM DQ Write Activ e D1 D2 D3 D4 D5 t RP H i-Z B L =don’t care , CL= 3 ( tRAS must be satisf ied ) Rev.01 23/33 256Mb SDRAM Truth Table 1. Command Truth Table ( EM488M3244VBA ) Command Ignore Command No operation Burst stop Read Read with auto pre-charge Write Write with auto pre-charge Bank activate Pre-charge select bank Pre-charge all banks Mode register set Symbol DESL NOP BSTH READ READA WRIT WRITA ACT PRE PALL MRS CKE n-1 H H H H H H H H H H H n X X X X X X X X X X X /CS H L L L L L L L L L L /RAS /CAS /WE X H H H H H L L L L L X H H L L L H H H H L X H L H H L H H L L L BA X X X V V V V V V X L A10 A9~A0 X X X L H L H V L H L X X X V V V V V X X V Note : H = High level, L = Low level, X = High or Low level (Don't care), V = Valid data input 2. DQM Truth Table Command Data w rite / output enable Data mask / output disable Upper byte w rite enable / output enable Read Read w ith auto pre-charge Write Write w ith auto pre-charge Bank activate Pre-charge select bank Pre-charge all banks Mode register set Symbol ENB MASK BSTH READ READA WRIT WRITA ACT PRE PALL MRS CKE n-1 H H H H H H H H H H H n X X X X X X X X X X X /CS H L L L L L L L L L L Note : H = High level, L = Low level, X = High or Low level (Don't care), V = Valid data input 3. CKE Truth Table Command Activating Any Clock suspend Idle Idle Self refresh Idle Power down Command Clock suspend mode entry Clock suspend mode Clock suspend mode exit CBR refresh command Self refresh entry Self refresh exit Pow er dow n entry Pow er dow n exit Symbol CKE n-1 H L L n L L H H L H H L H /CS X X X L L L H X X /RAS /CAS /WE Addr. X X X L L H X X X X X X L L H X X X X X X H H H X X X X X X X X X X X X REF SELF H H L L H L Re m ark H = High level, L = Low level, X = High or Low level (Don't care) Rev.01 24/33 256Mb SDRAM 4. Operative Command Table Current s tate /CS /R H L L Idle L L L L L H L L Row active L L L L L H L L L Read L L L L L H L L L Write L L L L L X H H H L L L L X H H H L L L L X H H H L L L L L X H H H L L L L L /C /W X H L L H H L L X H L L H H L L X H H L L H H L L X H H L L H H L L X X H L H L H L X X H L H L H L X H L H L H L H L X H L H L H L H L Addr. X X BA/CA/A10 BA/CA/A10 BA/RA BA, A10 X Op-Code X X BA/CA/A10 BA/CA/A10 BA/RA BA, A10 X Op-Code X X X BA/CA/A10 BA/CA/A10 BA/RA BA/A10 X Op-Code X X X BA/CA/A10 BA/CA/A10 BA/RA BA/A10 X Op-Code Command DESL NOP or BST READ/READA WRIT/WRITA ACT PRE/PALL REF/SELF MRS DESL NOP or BST READ/READA WRIT/WRITA ACT PRE/PALL REF/SELF MRS DESL NOP BST READ/READA WRIT/WRITA A CT PRE/PALL REF/SELF MRS DESL NOP BST READ/READA WRIT/WRITA A CT PRE/PALL REF/SELF MRS Action Nop or pow er dow n Nop or pow er dow n ILLEGAL ILLEGAL Row activating Nop Ref resh or self refresh Mode register accessing Nop Nop Begin read : Determine AP Begin w rite : Determine AP ILLEGAL Precharge ILLEGAL ILLEGAL Continue burst to end  Row active Continue burst to end  Row active Burst stop  Row active Terminate burst, new read : Determine AP Terminate burst, start w rite : Determine AP ILLEGAL Terminate burst, pre-charging ILLEGAL ILLEGAL Continue burst to end  Write recovering Continue burst to end  Write recovering Burst stop  Row active Terminate burst, start read : Determine AP 7, 8 Terminate burst, new w rite : Determine AP 7 ILLEGAL Terminate burst, pre-charging ILLEGAL ILLEGAL Notes 2 2 3 3 4 5 5 3 6 4 7 7, 8 3 4 7,8 7 3 9 Re m ark H = High level, L = Low level, X = High or Low level (Don't care) Rev.01 25/33 256Mb SDRAM Current s tate /CS /R H L L L X H H H H L L L L X H H H H L L L L X H H H H L L L L X H H H H L L L L /C /W X H H L L H H L L X H H L L H H L L X H H L L H H L L X H H L L H H L L X H L H L H L H L X H L H L H L H L X H L H L H L H L X H L H L H L H L Addr. X X X BA/CA/A10 BA/CA/A10 BA/RA BA, A10 X Op-Code X X X BA/CA/A10 BA/CA/A10 BA/RA BA, A10 X Op-Code X X X BA/CA/A10 BA/CA/A10 BA/RA BA, A10 X Op-Code X X X BA/CA/A10 BA/CA/A10 BA/RA BA, A10 X Op-Code Command DESL NOP BST READ/READA WRIT/WRITA ACT PRE/PALL REF/SELF MRS DESL NOP BST READ/READA WRIT/WRITA ACT PRE/PALL REF/SELF MRS DESL NOP BST READ/READA WRIT/WRITA ACT PRE/PALL REF/SELF MRS DESL NOP BST READ/READA WRIT/WRITA ACT PRE/PALL REF/SELF MRS Action Continue burst to end  Precharging Continue burst to end  Precharging ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL burst to end   Write recovering w ith auto precharge Continue burst to end  Write recovering w ith auto precharge ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL Nop  Enter idle af ter tRP Nop  Enter idle af ter tRP ILLEGAL ILLEGAL ILLEGAL ILLEGAL Nop  Enter idle af ter tRP ILLEGAL ILLEGAL Nop  Enter idle af ter tRCD Nop  Enter idle af ter tRCD ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL Notes 3 3 3 3 Read w ith AP L L L L L H L L Write w ith AP L L L L L L H L L L 3 3 3 3 3 3 3 Pre charging L L L L L H L L L 3 3 3,10 3 Row activating L L L L L Re m ark H = High level, L = Low level, X = High or Low level (Don't care), AP = Auto Precharge Rev.01 26/33 256Mb SDRAM Current s tate /CS /R H L L L X H H H H L L L L X H H H H L L L L X H H L L X H H H L /C /W X H H L L H H L L X H H L L H H L L X H L H L X H H L X X H L H L H L H L X H L H L H L H L X X X X X X H L X X Addr. X X X BA/CA/A10 BA/CA/A10 BA/RA BA, A10 X Op-Code X X X BA/CA/A10 BA/CA/A10 BA/RA BA, A10 X Op-Code X X X X X X X X X X Command DESL NOP BST READ/READA WRIT/WRITA ACT PRE/PALL REF/SELF MRS DESL NOP BST READ/READA WRIT/WRITA ACT PRE/PALL REF/SELF MRS DESL NOP/ BST READ/WRIT ACT/PRE/PALL REF/SELF/MRS DESL NOP BST READ/WRIT ACT/PRE/PALL/ REF/SELF/MRS Action Nop  Enter row active af ter tDPL Nop  Enter row active af ter tDPL Nop  Enter row active af ter tDPL Start read, Determine AP New w rite, Determine AP ILLEGAL ILLEGAL ILLEGAL ILLEGAL Nop  Enter precharge af ter tDPL Nop  Enter precharge af ter tDPL Nop  Enter precharge af ter tDPL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL Nop  Enter idle after tRC Nop  Enter idle after tRC ILLEGAL ILLEGAL ILLEGAL Nop Nop ILLEGAL ILLEGAL ILLEGAL Notes Write recovering L L L L L H L L L L L L L L H L 8 3 3 Write recovering w ith AP 3,8 3 3 Refres hing L L L H L M ode Regis ter Acces s ing L L L Re m ark H = High level, L = Low level, X = High or Low level (Don't care), AP = Auto Precharge Notes 1. A ll entries assume that CKE w as active (High level) during the preceding clock cycle. 2. If all banks are idle, and CKE is inactive (Low level), SDRAM w ill enter Pow er dow n mode. A ll input buf fers except CKE w ill be disabled. 3. Illegal to bank in specified states;  Function may be legal in the bank indicated by Bank Address (BA0/1), depending on the state of that bank. 4. If all banks are idle, and CKE is inactive (Low level), SDRAM w ill enter Self refresh mode. A ll input buf fers except CKE w ill be disabled. 5. Illegal if tRCD is not satisfied. 6. Illegal if tRAS is not satisfied. 7. Must satisfy burst interrupt condition. 8. Must satisfy bus contention, bus turn around, and/or w rite recovery requirements. 9. Must mask preceding data w hich don't satisfy tDPL. 10. Illegal if tRRD is not satisfied. Rev.01 27/33 256Mb SDRAM 5. Command Truth Table for CKE Current s tate CKE n-1 n H L Self re fres h L L L L H H H Self re fres h re covery H H H H H H Pow e r dow n L L H H H H Both bank s idle H H H H H H L Row active Any s tate o ther than lis ted above H L H H L L X H H H H L H H H H L L L L X H L H H H H H L L L L L X X X H L H L /CS /R X H L L L X H L L L H L L L X X X H L L L L H L L L L X X X X X X X X X H H L X X H H L X H H L X X X X H L L L X H L L L X X X X X X X /C /W X X H L X X X H L X X H L X X X X X X H L L X X H L L X X X X X X X X X X X X X X X X X X X X X X X X X X X H L X X X H L X X X X X X X Addr. X X X X X X X X X X X X X X X X X Action INVALID, CLK (n – 1) w ould exit self refresh Self refresh recovery Self refresh recovery ILLEGAL ILLEGAL Maintain self refresh Idle after tRC Idle after tRC ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL INVALID, CLK(n-1) w ould exit pow er dow n Exit pow er dow n   Idle Maintain pow er dow n mode Refer to operations in Operative Command Table Refer to operations in Operative Command Table Refer to operations in Operative Command Table Notes X Op-Code Refresh Refer to operations in Operative Command Table Refer to operations in Operative Command Table Refer to operations in Operative Command Table Refer to operations in Operative Command Table X Op-Code X X X X X X Self refresh Refer t o operations in Operative Command Table Pow er dow n Refer to operations in Operative Command Table Pow er dow n Refer to operations in Operative Command Table Begin clock suspend next cycle Exit clock suspend next cycle Maintain clock suspend 1 1 1 2 Re m ark : H = High level, L = Low level, X = High or Low level (Don't care) Notes 1. Self refresh can be entered only from the both banks idle state. Pow er dow n can be entered only from both banks idle or row active state. 2. Must be legal command as defined in Operative Command Table. Rev.01 28/33 256Mb SDRAM Absolute Maximum Ratings Symbol VIN, VOUT VDD, VDDQ TOP TSTG PD IOS Item Input, Output Voltage Power Supply Voltage Operating Temperature Storage Temperature Power Dissipation Short Circuit Current Rating -0.5 ~ 4.6 -0.5 ~ 4.6 0 ~ 70 -55 ~ 125 1 50 Units V V C C W mA Note : Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Recommended DC Operation Conditions ( Ta = 0 ~ 70° C) Symbol VDD VDDQ VIH VIL Parameter Power Supply Voltage Power Supply Voltage (for I/O Buffer) Input logic high voltage Input logic low voltage Min. 3.0 3.0 2.0 -0.3 Typical 3.3 3.3 Max. 3.6 3.6 VDD+0.3 0.8 Units V V V V Note : 1. All voltage referred to V SS. 2. V IH ( max) = VDD+1.5V for pulse w idth  5ns 3. V IL ( min) = VSS-1.5V f or pulse w idth  5ns Capacitance ( Vcc =3.3V, f = 1M Hz, Ta = 25 °C ) Symbol CCLK CI CO Parameter Clock capacitance Input capacitance for CLK, CKE, Address, /CS, /RAS, /CAS, /WE, DQM0 ~ 3 Input/Output capacitance Min. 1.5 1.5 3.0 Max. 3.0 3.0 5.5 Units pF pF pF Rev.01 29/33 256Mb SDRAM Recommended DC Operating Conditions ( VDD = 3.3V +/- 0.3 V, Ta = 0 ~ 70 °C, Ta = -40 to 85°C ) Parameter Symbol Test condition MAX Units Notes Operating current ICC1 Burst length = 1, tRC = tRC ( min), IOL = 0 mA, One bank active CKE V IL ( max.), tCk = tck(min) CKE V IL ( max.), tCk =  CKE V IL ( min.), tCK = tck(min), /CS V IH ( min.)Input signals are changed one time during 2clk CKE,/CS V IL ( min.), tCK =  Input signals are stable 125 mA 1 Precharge standby ICC2P current in power down ICC2PS m ode ICC2N 3 2 20 mA mA mA Precharge standby current in non-power down mode ICC2NS ICC3P ICC3PS 9 4 3 mA mA mA Active standby current in power down mode CKE VIL(max), tCK = tck(min) CKE VIL(max), tCK =  CKE VIL(min), tCK = tck(min) , / CS VIH(min) Input signals are changed one time during 2clk CKE VIL(min), tCK =  Input signals are stable tCCD = 2CLKs , IOL = 0 m A tRC =tRC(min.) VIL 0.2V ,VIH VDD-0.2V ICC3N Active standby current in non-power down m ode ICC3NS operating current (Burst mode) Refresh current Self Refresh current 45 mA 30 mA ICC4 ICC5 ICC6 150 270 3 mA mA mA 2 3 4 Note : 1. ICC1 depends on output loading and cycle rates. Specified values are obtained w ith the output open. Input signals are changed only one time during tCK(min) 2. ICC4 depends on output loading and cycle rates. Specified values are obtained w ith the output open. Input signals are changed only one time during tCK(min) 3. Input signals are changed only one time during tCK(min) 4. Standard pow er version. Rev.01 30/33 256Mb SDRAM Recommended DC Operating Conditions ( Continued ) Parameter Symbol Test condition Min. Max. Unit Input leakage current IIL 0  VI  VDDQ, VDDQ=VDD All other pins not under test=0 V 0  VO  VDDQ, DOUT is disabled Io = -2mA Io = +2mA -1 +1 uA Output leakage current High level output voltage Low level output voltage IOL VOH VOL -1.5 2.4 +1.5 uA V 0.4 V AC Operating Test Conditions ( VDD = 3.3V +/- 0.3 V, Ta = 0 ~ 70° C ) Output Reference Level Output Load Input Signal Level Transition Time of Input Signals Input Reference Level 1.4V / 1.4V CL=30pF 2.4V / 0.4V 2ns 1.4V Rev.01 31/33 256Mb SDRAM Operating AC Characteristics ( VDD = 3.3V +/- 0.3 V, Ta = 0 ~ 70°C, Ta = -40 to 85°C ) Parameter CL = 3 CL = 2 tCK Symbol -8 Min. Max. 8 10 2.5 2.5 2 5.4 - Units Notes ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns CLK CLK CLK CLK CLK 3 3 3 3 3 2 Clock cycle time Access time from CLK CLK high level width CLK low level width Data-out hold time tAC tCH tCL tOH Data-out high impedance time Data-out low impedance time Input hold time Input setup time ACTIVE to ACTIVE command period ACTIVE to PRECHARGE command period PRECHARGE to ACTIVE command period ACTIVE to READ/WRITE delay time ACTIVE(one) to ACTIVE(another) command READ/WRITE command to READ/WRITE command Data-in to PRECHARGE command Data-in to BURST stop command Data-out to high impedance from CL = 3 PRECHARGE command CL = 2 Refresh time(4,096 cycle) tHZ tLZ tIH tIS tRC tRAS tRP tRCD tRRD tCCD tDPL tBDL tROH tREF 0 0.8 1.5 67.5 5.4 - 45 120k 20 20 15 1 2 1 3 2 64 ms Note : 1. All voltages referenced to Vss. 2. tHZ d efines the time at which the output achieve the open circuit condition and is not referenced to output voltage levels. 3. These parameters account for the number of clock cycle and d epend on the operating frequency of the clock, as follows : The number of clock cycles = Specified value of timing/clock period (Count fractions as a whole number) Rev.01 32/33 256Mb SDRAM Package Dimension * EOREX reserves the right to change products or specification without notice. Rev.01 33/33