6MBI300U-170

6MBI300U-170 IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure 1700V / 300A 6 in one-package Applications · Uninterruptible power supply · Inverter for Motor drive · AC and DC Servo drive amplifier · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso C onditions Rating 1700 ±20 450 300 900 600 300 600 1385 +150 -40 to +125 3400 Unit V V A Continuous Tc=25°C Tc=80°C 1ms Tc=25°C Tc=80°C 1 device Collector Power Dissipation Junction temperature Storage temperature AC:1min. Isolation voltage between terminal and copper base *1 between thermistor and others *2 3.5 Screw Torque Mounting *3 4.5 Terminals *4 *1 : All terminals should be connected together when isolation test will be done. *2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. *3 :Recommendable value : 2.5 to 3.5 N·m(M5) *4 :Recommendable value : 3.5 to 4.5 N·m(M6) W °C VAC N·m Electrical characteristics (at Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) t rr R lead R Conditions VGE=0V, VCE=1700V VCE=0V, VGE=±20V VCE=20V, IC=300mA VGE=15V, IC=300A Tj=25°C Tj=125°C Tj=25°C Tj=125°C VCE=10V, VGE=0V, f=1MHz VCC =900V IC=300A VGE=±15V RG=2 Ω VGE=0V IF=300A Tj=25°C Tj=125°C Tj=25°C Tj=125°C Characteristics Min. Typ. – – – – 4.5 6.5 – 2.35 – 2.70 – 2.05 – 2.40 – 30 – 0.58 – 0.32 – 0.10 – 0.80 – 0.15 – 2.10 – 2.30 – 1.80 – 2.00 – 0.3 – 1.0 – 5000 465 495 3305 3375 Unit Max. 3.0 600 8.5 2.85 – 2.55 – – 1.20 0.60 – 1.50 0.30 2.85 – 2.55 – 0.6 – – 520 3450 mA nA V V Inverter Input capacitance Turn-on time nF µs Turn-off time Forward on voltage V Thermistor Reverse recovery time Lead resistance, terminal-chip*4 Resistance IF=300A T=25°C T=100°C T=25/50°C µs mΩ Ω Κ B value B *4:Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*5 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. – – – – – 0.0167 Unit Max. 0.09 0.15 – °C/W °C/W °C/W *5 : This is the value which is defined mounting on the additional cooling fin with thermal compound. 6MBI300U-170 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 800 800 IGBT Module Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip 600 Collector current : Ic [A] VGE=20V 15V Collector current : Ic [A] VGE=20V 600 12V 15V 12V 400 400 200 10V 9V 200 10V 9V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 800 T j=25°C 600 Collector current : Ic [A] 10 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip Collector - Emitter voltage : VCE [ V ] 8 6 400 T j=125°C 4 200 2 Ic=600A Ic=300A Ic=150A 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1M Hz, Tj= 25°C 1000.0 Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Dynamic Gate charge (typ.) Vcc=900V, Ic=300A, Tj= 25°C Capacitance : Cies, Coes, Cres [ nF ] 100.0 Cies VGE 10.0 Cres 1.0 Coes VCE 0 500 1000 1500 2000 0.1 0 10 20 30 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] 6MBI300U-170 Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=2Ω, Tj= 25°C 10000 10000 IGBT Module Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=2Ω, Tj=125°C Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 1000 toff ton tr 1000 toff ton tr tf 100 tf 100 10 0 200 400 600 Collector current : Ic [ A ] 10 0 200 400 600 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=900V, Ic=300A, VGE=±15V, Tj= 25°C 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 180 160 Switching loss vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=2Ω Switching time : ton, tr, toff, tf [ nsec ] Eoff(125°C) 140 120 100 80 60 40 20 0 Eoff(25°C) Eon(125°C) Err(125°C) Err(25°C) Eon(25°C) 1000 toff ton tr 100 tf 10 1.0 Gate resistance : Rg [ Ω ] 10.0 0 200 400 600 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=900V, Ic=300A, VGE=±15V, Tj= 125°C Reverse bias safe operating area (max.) +VGE=15V,-VGE = 2Ω ,Tj