E13003

POWER TRANSISTOR E13003 SWITCHING REGULATOR APPLICATION • High speed switching • Suitable for switching regulator and motor control • Case : TO-126 molded plastic body TO-126 DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 ±±± MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 ±±± ±B ± U Q F ±A ± M C 123 H K V G S D 2 PL J R 0.25 (0.010) M M NPN SILICON TRANSISTOR FEATURES Tc=25 C unless otherwise specified o A B M B M 0.25 (0.010) A M M Parameter Collector dissipation Collector current (DC) Collector current (Pulse) Operating and storage junction temperature range Symbol PC IC ICP TJ, TSTG o o Value 20 1.5 3 -55 C to +150 C o UNIT W A A o C ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Fall time Storage time Tc=25 C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCEsat VBEsat VBE fT tf ts Test conditions IC=1mA , IE=0 IC=10mA , IB=0 IE=1mA , IC=0 VCB=700V , IE=0 VCE=400V , IB=0 VEB=9V , IC=0 VCE=2V , IC=0.5mA VCE=10V , IC=0.5mA IC=1A , IB=250mA IC=1A , IB=250mA IE=2A VCE=10V , IC=100mA f=1MHz IC=1A , IB1=-IB2=0.2mA , VCC=100V MIN 700 400 9 MAX UNIT V V V 1 500 1 8 5 1 1.2 3 5 0.5 2.5 40 mA μA mA V V V MHz μS μS RATINGS AND CHARACTERISTIC CURVES E13003