BGA5L1BN6E6327XTSA1

BGA5L1BN6 BGA5L1BN6 18dB High Gain Low Noise Amplifier for LTE Lowband Features • Operating frequencies: 600 - 1000 MHz • Insertion power gain: 18.5 dB • Insertion Loss in bypass mode: 2.7 dB • Low noise figure: 0.7 dB • Low current consumption: 8.2 mA • Multi-state control: Bypass- and high gain-Mode • Ultra small TSNP-6-10 leadless package • RF output internally matched to 50 Ohm • Low external component count 0.7 x 1.1 mm2 Application The LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the basestation the bypass mode can be activated reducing current consumption. Product Validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Block diagram VCC AI C AO ESD GND BGA5L1BN6_Blockdiagram.vsd Data Sheet www.infineon.com Revision 2.0 2018-03-15 BGA5L1BN6 18dB High Gain Low Noise Amplifier for LTE Lowband Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Data Sheet 2 Revision 2.0 2018-03-15 BGA5L1BN6 18dB High Gain Low Noise Amplifier for LTE Lowband Features 1 Features • Insertion power gain: 18.5 dB • Insertion Loss in bypass mode: 2.7 dB • Low noise figure: 0.7 dB • Low current consumption: 8.2 mA • Operating frequencies: 600 - 1000 MHz • Multi-state control: Bypass- and High gain-Mode • Supply voltage: 1.5 V to 3.6 V • Ultra small TSNP-6-10 leadless package (footprint: 0.7 x 1.1 mm2) • B9HF Silicon Germanium technology • RF output internally matched to 50 Ohm • Low external component count • Pb-free (RoHS compliant) package VCC C AI AO ESD GND BGA5L1BN6_Blockdiagram.vsd Figure 1 Block Diagram Product Name Marking Package BGA5L1BN6 3 TSNP-6-10 Data Sheet 3 Revision 2.0 2018-03-15 BGA5L1BN6 18dB High Gain Low Noise Amplifier for LTE Lowband Features Description The BGA5L1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 600 MHz to 1000 MHz. The LNA provides 18.5 dB gain and 0.7 dB noise figure at a current consumption of 8.2 mA in the application configuration described in Chapter 4. In bypass mode the LNA provides an insertion loss of 2.7 dB. The BGA5L1BN6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. The device features a single-line two-state control (Bypass- and High gain-Mode). OFF-state can be enabled by powering down VCC. Pin Definition and Function Table 1 Pin Definition and Function Pin No. Name Function 1 GND Ground 2 VCC DC supply 3 AO LNA output 4 GND Ground 5 AI LNA input 6 C Control Data Sheet 4 Revision 2.0 2018-03-15 BGA5L1BN6 18dB High Gain Low Noise Amplifier for LTE Lowband Maximum Ratings 2 Maximum Ratings Table 2 Maximum Ratings Parameter Symbol Values Min. Typ. Max. Unit Note or Test Condition Voltage at pin VCC VCC -0.3 – 3.6 V 1) Voltage at pin AI VAI -0.3 – 0.9 V – Voltage at pin AO VAO -0.3 – VCC + 0.3 V – Voltage at pin C VC -0.3 – VCC + 0.3 V – Voltage at pin GND VGND -0.3 – 0.3 V – Current into pin VCC ICC – – 16 mA – RF input power PIN – – +25 dBm – Total power dissipation, TS < 148 °C2) Ptot – – 60 mW – Junction temperature TJ – – 150 °C – Ambient temperature range TA -40 – 85 °C – Storage temperature range TSTG -55 – 150 °C – 1) All voltages refer to GND-Node unless otherwise noted 2) TS is measured on the ground lead at the soldering point Attention: Stresses above the max. values listed here may cause permanent damage to the device. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Exposure to conditions at or below absolute maximum rating but above the specified maximum operation conditions may affect device reliability and life time. Functionality of the device might not be given under these conditions. Data Sheet 5 Revision 2.0 2018-03-15 BGA5L1BN6 18dB High Gain Low Noise Amplifier for LTE Lowband Electrical Characteristics 3 Electrical Characteristics Table 3 Electrical Characteristics VCC = 1.8V1) TA = 25 °C, VCC = 1.8 V, VC,BP = 1.8 V, VC,OFF = 0 V, f = 600 - 1000 MHz Parameter Symbol Values Min. Typ. Max. Unit Note or Test Condition Supply voltage VCC 1.5 1.8 3.6 V – Control voltages VC 1.0 – VCC V High gain mode 0 – 0.4 V Bypass mode – 8.2 9.7 mA High gain mode – 85 120 µA Bypass mode 17.0 18.5 20.0 dB High gain mode -3.9 -2.7 -1.5 dB Bypass mode – 0.7 1.2 dB High gain mode – 2.7 3.9 dB Bypass mode 7 10 – dB High gain mode 8 11 – dB Bypass mode 10 19 – dB High gain mode 5 8 – dB Bypass mode 22 29 – dB High gain mode 1.5 2.7 – dB Bypass mode – 3 7 µs OFF to High gain mode -24 -20 – dBm High gain mode -2 2 – dBm Bypass mode -12 -7 – dBm High gain mode 6 11 – dBm Bypass mode >1 – – Supply current ICC Insertion power gain f = 840 MHz 2) Noise figure f = 840 MHz, ZS = 50 Ω 3) 2 |S21| NF Input return loss f = 840 MHz RLIN Output return loss3) f = 840 MHz RLOUT 3) Reverse isolation f = 840 MHz Power on time 4)6) 2 1/|S12| tS Inband input 1dB-compression IP1dB point, f = 840 MHz3) rd Inband input 3 -order intercept point3)5) f1 = 840 MHz, f2 = f1 +/- 1 MHz IIP3 Stability6) k 1) 2) 3) 4) 5) 6) f = 20 MHz ... 10 GHz Based on the application described in Chapter 4 PCB losses are subtracted Verification based on AQL; not 100% tested in production Gain changed to >90% of gain difference (in dB) Input power HG = -30 dBm for each tone; input power BP = -10 dBm for each tone Guaranteed by device design; not tested in production Data Sheet 6 Revision 2.0 2018-03-15 BGA5L1BN6 18dB High Gain Low Noise Amplifier for LTE Lowband Electrical Characteristics Table 4 Electrical Characteristics VCC = 2.8V1) TA = 25 °C, VCC = 2.8 V, VC,BP = 2.8 V, VC,OFF = 0 V, f = 600 - 1000 MHz Parameter Symbol Values Min. Typ. Max. Unit Note or Test Condition Supply voltage VCC 1.5 2.8 3.6 V – Control voltages VC 1.0 – VCC V High gain mode 0 – 0.4 V Bypass mode – 9.4 10.9 mA High gain mode – 87 120 µA Bypass mode 17.2 18.7 20.2 dB High gain mode -3.9 -2.7 -1.5 dB Bypass mode – 0.75 1.25 dB High gain mode – 2.7 3.9 dB Bypass mode 8 11 – dB High gain mode 8 11 – dB Bypass mode 10 18 – dB High gain mode 5 8 – dB Bypass mode 22 29 – dB High gain mode 1.5 2.7 – dB Bypass mode – 3 7 µs OFF to High gain mode Inband input 1dB-compression IP1dB point, f = 840 MHz3) -24 -20 – dBm High gain mode -2 2 – dBm Bypass mode Inband input 3rd-order intercept point3)5) f1 = 840 MHz, f2 = f1 +/- 1 MHz IIP3 -12 -7 – dBm High gain mode 6 11 – dBm Bypass mode Stability6) k >1 – – Supply current ICC Insertion power gain f = 840 MHz 2) Noise figure f = 840 MHz, ZS = 50 Ω 3) 3) Reverse isolation3) f = 840 MHz Power on time 1) 2) 3) 4) 5) 6) NF RLIN Input return loss f = 840 MHz Output return loss f = 840 MHz |S21|2 4)6) RLOUT 1/|S12|2 tS f = 20 MHz ... 10 GHz Based on the application described in Chapter 4 PCB losses are subtracted Verification based on AQL; not 100% tested in production Gain changed to >90% of gain difference (in dB) Input power HG = -30 dBm for each tone; input power BP = -10 dBm for each tone Guaranteed by device design; not tested in production Data Sheet 7 Revision 2.0 2018-03-15 BGA5L1BN6 18dB High Gain Low Noise Amplifier for LTE Lowband Application Information 4 Application Information Application Board Configuration N1 BGA5L1BN6 GND, 4 C1 AO, 3 RFout L1 RFin AI, 5 VCC VCC, 2 C2 (optional) Ctrl C, 6 GND, 1 BGA5L1BN6_Schematic.vsd Figure 2 Application Schematic BGA5L1BN6 Table 5 Bill of Materials Name Value Package Manufacturer Function C1 1nF 0402 Various Input matching C2 (optional) ≥ 1nF 0402 Various RF bypass 1) L1 11nH 0402 Murata LQW15 type Input matching N1 BGA5L1BN6 TSNP-6-10 Infineon SiGe LNA 1) RF bypass recommended to mitigate power supply noise A list of all application notes is available at http://www.infineon.com/ltelna Data Sheet 8 Revision 2.0 2018-03-15 BGA5L1BN6 18dB High Gain Low Noise Amplifier for LTE Lowband Package Information 5 Package Information Figure 3 TSNP-6-10 Package Outline (top, side and bottom views) Figure 4 Footprint Recommendation TSNP-6-10 Data Sheet 9 Revision 2.0 2018-03-15 BGA5L1BN6 18dB High Gain Low Noise Amplifier for LTE Lowband Package Information TSNP-6-10_MK.vsd Figure 5 Marking Layout TSNP-6-10 (top view) Figure 6 Date Code Marking TSNP-6-10 Pin 1 marking TSNP-6-10_TP.vsd Figure 7 Data Sheet Tape & Reel Dimensions TSNP-6-10 (reel diameter 180 mm, pieces/reel 12000) 10 Revision 2.0 2018-03-15 BGA5L1BN6 18dB High Gain Low Noise Amplifier for LTE Lowband Revision History Page or Item Subjects (major changes since previous revision) Revision 2.0, 2018-03-15 all Update Package Information 5 Update Maximum Ratings Data Sheet 11 Revision 2.0 2018-03-15 Please read the Important Notice and Warnings at the end of this document Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2018-03-15 Published by Infineon Technologies AG 81726 Munich, Germany © 2018 Infineon Technologies AG. All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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