BSB028N06NN3GXUMA1

BSB028N06NN3 G OptiMOS™3 Power-MOSFET Product Summary Features • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) VDS 60 V RDS(on),max 2.8 mW ID 90 A • Superior thermal resistance CanPAKTM M MG-WDSON-2 • Dual sided cooling • low parasitic inductance • Low profile (2|I D|R DS(on)max, I D=30 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information Rev. 2.0 page 2 2014-04-17 BSB028N06NN3 G Parameter Values Symbol Conditions Unit min. typ. max. - 8800 12000 pF - 2100 2800 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=30 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance Crss - 64 - Turn-on delay time t d(on) - 21 - Rise time tr - 9 - Turn-off delay time t d(off) - 38 - Fall time tf - 6 - Gate to source charge Q gs - 41 - Gate to drain charge Q gd - 8 - - 23 - V DD=30 V, V GS=10 V, I D=30 A, R G,ext=1.6 W ns Gate Charge Characteristics5) V DD=30 V, I D=30 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 108 143 Gate plateau voltage V plateau - 4.6 - Output charge Q oss - 87 116 - - 30 - - 120 - 0.8 1.2 V - 60 - ns - 87 - nC V DD=30 V, V GS=0 V V Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr A T C=25 °C V GS=0 V, I F=30 A, T j=25 °C V R=30 V, I F=I S, di F/dt =100 A/µs Reverse recovery charge 4) 5) Q rr See figure 13 for more detailed information See figure 16 for gate charge parameter definition Rev. 2.0 page 3 2014-04-17 BSB028N06NN3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 90 100 80 90 80 70 70 60 ID [A] Ptot [W] 60 50 40 50 40 30 30 20 20 10 10 0 0 0 25 50 75 100 125 150 175 0 25 TC [°C] 50 75 100 125 150 175 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 limited by on-state resistance 1 µs 10 µs 102 100 µs 100 1 ms ZthJC [K/W] 101 ID [A] 10 ms DC 100 0.5 0.2 0.1 10-1 10-1 0.05 0.02 0.01 single pulse 10-2 10-2 10-1 100 101 102 VDS [V] Rev. 2.0 tp [s] page 4 2014-04-17 BSB028N06NN3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 360 8 8V 10 V 7V 320 5V 280 5.5 V 6V 6 240 RDS(on) [mW] ID [A] 6V 200 160 4 7V 5.5 V 8V 120 10V 2 80 5V 40 4.5V 0 0 0 1 2 3 0 40 80 120 VDS [V] 160 200 240 280 320 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 200 160 160 120 ID [A] gfs [S] 120 80 80 150 °C 40 25 °C 40 0 0 0 2 4 6 8 VGS [V] Rev. 2.0 0 40 80 120 ID [A] page 5 2014-04-17 BSB028N06NN3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS 6 4 5 1020 µA 3 102 µA VGS(th) [V] RDS(on) [mW] 4 max 3 typ 2 2 1 1 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 100 Ciss Coss IF [A] C [pF] 103 10 102 150 °C25 °C Crss 101 25°C 150°C 98%98% 1 0 10 20 30 40 50 60 VDS [V] Rev. 2.0 0.0 0.5 1.0 1.5 2.0 VSD [V] page 6 2014-04-17 BSB028N06NN3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 100 12 30 V 10 12V 48 V 125 °C 10 100 °C VGS [V] IAV [A] 8 25 °C 6 4 2 1 0 1 10 100 1000 10000 0 30 tAV [µs] 60 90 120 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 66 V GS Qg 64 VBR(DSS) [V] 62 60 V gs(th) 58 56 Q g(th) Q sw Q gs 54 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.0 page 7 2014-04-17 BSB028N06NN3 G Package Outline Rev. 2.0 CanPAK™ M MG-WDSON-2 page 8 2014-04-17 BSB028N06NN3 G CanPAK™ M MG-WDSON-2 Dimensions in mm Rev. 2.0 page 9 2014-04-17 BSB028N06NN3 G CanPAK™ M MG-WDSON-2 Dimensions in mm Raccomended stencil thikness 150 mm Rev. 2.0 page 10 2014-04-17 BSB028N06NN3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 11 2014-04-17