1
Package
PG-DSO-14-40 EP
Marking
BTT6030-2EKB
Overview
Application
•
Suitable for resistive, inductive and capacitive loads
•
Replaces electromechanical relays, fuses and discrete circuits
•
Most suitable for loads with high inrush current, such as lamps
•
Suitable for 24 V trucks + trailer and transportation systems
VBAT
Voltage Regulator
OUT
T1
VS
GND
Z
CVS
VS
VDD
I/O
DEN
RDEN
OUT0
OUT3
I/O
I/O
Micro
controller
I/O
RDSEL
COUT
DSEL
RIN
IN0
RIN
IN1
OUT4
Bulb
OUT1
COUT
A/D
RSENSE
IS
Bulb
GND
GND
CSENSE
D
Application Diagram with BTT6030-2EKB
Data Sheet
www.infineon.com
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Overview
Basic Features
•
Two channel device
•
Very low stand-by current
•
3.3 V and 5 V compatible logic inputs
•
Electrostatic discharge protection (ESD)
•
Optimized electromagnetic compatibility
•
Logic ground independent from load ground
•
Very low power DMOS leakage current in OFF state
•
Green product (RoHS compliant)
•
AEC qualified
Description
The BTT6030-2EKB is a 32 m dual channel Smart High-Side Power Switch, embedded in a PG-DSO-14-40 EP,
Exposed Pad package, providing protective functions and diagnosis. The power transistor is built by an
N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is
specially designed to drive lamps up to 2 * P21W 24V, as well as LEDs in the harsh automotive environment.
Table 1
Product Summary
Parameter
Symbol
Value
Operating voltage range
VS(OP)
5 V ... 36 V
Maximum supply voltage
VS(LD)
65 V
Maximum ON state resistance at TJ = 150 °C per channel
RDS(ON)
62 m
Nominal load current (one channel active)
IL(NOM)1
6A
Nominal load current (both channels active)
IL(NOM)2
4A
Typical current sense ratio
kILIS
2240
Minimum current limitation
IL5(SC)
40 A
Maximum standby current with load at TJ = 25 °C
IS(OFF)
500 nA
Diagnostic Functions
•
Proportional load current sense for both channels multiplexed
•
Open load in ON and OFF
•
Short circuit to battery and ground
•
Overtemperature
•
Stable diagnostic signal during short circuit
•
Enhanced kILIS dependency with temperature and load current
Protection Functions
•
Stable behavior during undervoltage
•
Reverse polarity protection with external components
•
Secure load turn-off during logic ground disconnect with external components
•
Overtemperature protection with latch
•
Overvoltage protection with external components
•
Voltage dependent current limitation
•
Enhanced short circuit protection for up to 40 m cables
Data Sheet
2
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Table of Contents
1
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
3.1
3.2
3.3
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Voltage and Current Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
4.1
4.2
4.3
4.3.1
4.3.2
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
PCB set up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5
5.1
5.2
5.3
5.3.1
5.3.2
5.4
5.5
Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Output ON-state Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Turn ON/OFF Characteristics with Resistive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Inductive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Output Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Maximum Load Inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Inverse Current Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Electrical Characteristics Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6
6.1
6.2
6.3
6.4
6.5
6.5.1
6.5.2
6.6
Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Undervoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Overload Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Temperature Limitation in the Power DMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Electrical Characteristics for the Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
7
7.1
7.2
7.3
7.3.1
7.3.2
7.3.3
7.3.3.1
7.3.3.2
7.3.3.3
7.3.4
7.3.5
7.3.6
7.4
Diagnostic Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
IS Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
SENSE Signal in Different Operating Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
SENSE Signal in the Nominal Current Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
SENSE Signal Variation as a Function of Temperature and Load Current . . . . . . . . . . . . . . . . . . . . . . . 28
SENSE Signal Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
SENSE Signal in Open Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Open Load in ON Diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Open Load in OFF Diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Open Load Diagnostic Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
SENSE Signal with OUT in Short Circuit to VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
SENSE Signal in Case of Overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
SENSE Signal in Case of Inverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Electrical Characteristics Diagnostic Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
8
Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Data Sheet
3
6
6
6
7
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
8.1
8.2
8.3
8.4
Input Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DEN / DSEL Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Pin Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
9.1
9.1.1
9.1.2
9.1.3
9.1.4
9.1.5
9.2
9.2.1
9.2.2
9.2.3
9.2.4
9.2.5
9.2.6
9.2.7
9.2.8
9.2.9
9.3
9.3.1
9.3.2
9.4
9.4.1
9.4.2
9.4.3
9.4.4
9.5
9.5.1
9.5.2
9.5.3
9.5.4
Characterization Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Minimum Functional Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Undervoltage Shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Current Consumption One Channel Active . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Current Consumption Two Channels Active . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Standby Current for Whole Device with Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Output Voltage Drop Limitation at Low Load Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Drain to Source Clamp Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Slew Rate at Turn ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Slew Rate at Turn OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Turn ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Turn OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Turn ON / OFF matching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Switch ON Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Switch OFF Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Overload Condition in the Low Voltage Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Overload Condition in the High Voltage Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Diagnostic Mechanism . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Current Sense at no Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Open Load Detection Threshold in ON State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Sense Signal Maximum Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Sense Signal maximum Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Input Voltage Threshold ON to OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Input Voltage Threshold OFF to ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Input Voltage Hysteresis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Input Current High Level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
10
10.1
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Data Sheet
4
36
36
36
37
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Block Diagram
2
Block Diagram
Figure 1
Block Diagram for the BTT6030-2EKB
Data Sheet
5
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Pin Configuration
3
Pin Configuration
3.1
Pin Assignment
GND
1
14
OUT0
IN0
2
13
OUT0
DEN
3
12
OUT0
IS
4
11
NC
DSEL
5
10
OUT1
IN1
6
9
OUT1
NC
7
8
OUT1
Pinout dual SO14 .vsd
Figure 2
Pin Configuration
3.2
Pin Definitions and Functions
Table 1
Pin Definition and Functions
Pin
Symbol
Function
1
GND
GrouND; Ground connection
2
IN0
INput channel 0; Input signal for channel 0 activation
3
DEN
Diagnostic ENable; Digital signal to enable/disable the diagnosis of the device
4
IS
Sense; Sense current of the selected channel
5
DSEL
Diagnostic SELection; Digital signal to select the channel to be diagnosed
6
IN1
INput channel 1; Input signal for channel 1 activation
7, 11
NC
Not Connected; No internal connection to the chip
8, 9, 10
OUT1
OUTput 1; Protected high side power output channel 1 1)
12, 13, 14
OUT0
OUTput 0; Protected high side power output channel 0 1)
Cooling Tab
VS
Voltage Supply; Battery voltage
1) All output pins of a given channel must be connected together on the PCB. All pins of an output are internally connected
together. PCB traces have to be designed to withstand the maximum current which can flow.
Data Sheet
6
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Pin Configuration
3.3
Voltage and Current Definition
Figure 3 shows all terms used in this data sheet, with associated convention for positive values.
Figure 3
Data Sheet
Voltage and Current Definition
7
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings
Table 2
Absolute Maximum Ratings 1)
TJ = -40 °C to +150 °C; (unless otherwise specified)
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note or
Test Condition
Number
Supply Voltages
Supply voltage
VS
-0.3
–
48
V
–
P_4.1.1
Reverse polarity voltage
-VS(REV)
0
–
28
V
t < 2 min
TA = 25 °C
RL 12
ZGND= Diode +27
P_4.1.2
Supply voltage for short
circuit protection
VBAT(SC)
0
–
36
V
Rsupply = 10 m
Lsupply = 5 µH
RCable1 = 20 m
LCable1 = 0 µH
RCable2 = 320 m
LCable2 = 40 µH
P_4.1.3
See Chapter 6 and
Figure 53
VS(LD)
–
–
65
V
2)
RI = 2
RL = 12
P_4.1.12
nRSC1
–
–
100
k cycles
3)
P_4.1.4
VIN
-0.3
–
–
6
7
V
–
t < 2 min
P_4.1.13
Current through INPUT pins IIN
-2
–
2
mA
–
P_4.1.14
Voltage at DEN pin
VDEN
-0.3
–
–
6
7
V
–
t < 2 min
P_4.1.15
Current through DEN pin
IDEN
-2
–
2
mA
–
P_4.1.16
Voltage at DSEL pin
VDSEL
-0.3
–
–
6
7
V
–
t < 2 min
P_4.1.17
Current through DSEL pin
IDSEL
-2
–
2
mA
–
P_4.1.18
Voltage at IS pin
VIS
-0.3
–
VS
V
–
P_4.1.19
Current through IS pin
IIS
-25
–
50
mA
–
P_4.1.20
Supply voltage for Load
dump protection
Short Circuit Capability
Permanent short circuit
IN pin toggles
VSupply= 28 V
Input Pins
Voltage at INPUT pins
Sense Pin
Data Sheet
8
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
General Product Characteristics
Table 2
Absolute Maximum Ratings (cont’d)1)
TJ = -40 °C to +150 °C; (unless otherwise specified)
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note or
Test Condition
Number
Power Stage
Load current
| IL |
–
–
IL(LIM)
A
–
P_4.1.21
Power dissipation (DC)
PTOT
–
–
2.0
W
TA = 85 °C
TJ < 150 °C
P_4.1.22
Maximum energy
dissipation
Single pulse (one channel)
EAS
–
–
85
mJ
IL(0) = 4 A
TJ(0) = 150 °C
VS = 28 V
P_4.1.23
Voltage at power transistor VDS
–
–
65
V
–
P_4.1.26
-20
-200
–
20
20
mA
–
t < 2 min
P_4.1.27
Currents
Current through ground pin I GND
Temperatures
Junction temperature
TJ
-40
–
150
°C
–
P_4.1.28
Storage temperature
TSTG
-55
–
150
°C
–
P_4.1.30
ESD susceptibility (all pins)
VESD
-2
–
2
kV
4)
HBM
P_4.1.31
ESD susceptibility OUT Pin
vs. GND and VS connected
VESD
-4
–
4
kV
4)
HBM
P_4.1.32
ESD susceptibility
VESD
-500
–
500
V
5)
CDM
P_4.1.33
V
5)
CDM
P_4.1.34
ESD Susceptibility
ESD susceptibility pin
(corner pins)
VESD
-750
–
750
1) Not subject to production test. Specified by design.
2) VS(LD) is setup without the DUT connected to the generator per ISO 7637-1.
3) Threshold limit for short circuit failures : 100ppm. Please refer to the legal disclaimer for short circuit capability at the
end of this document.
4) ESD susceptibility HBM according to ANSI/ESDA/JEDEC JS-001-2010
5) “CDM” ESDA STM5.3.1
Notes
1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as outside normal operating range. Protection functions are not
designed for continuous repetitive operation.
Data Sheet
9
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
General Product Characteristics
4.2
Functional Range
Table 3
Functional Range TJ = -40 °C to +150 °C; (unless otherwise specified)
Parameter
Nominal operating voltage
Symbol
VNOM
Values
Min.
Typ.
Max.
8
28
36
Unit
Note or
Test Condition
Number
V
–
P_4.2.1
Extended operating voltage
VS(OP)
5
–
48
V
2)
VIN = 4.5 V
RL = 12
VDS < 0.5 V
See Figure 15
P_4.2.2
Minimum functional supply
voltage
VS(OP)_MIN
3.8
4.3
5
V
1)
VIN = 4.5 V
RL = 12
From IOUT = 0 A
to
VDS < 0.5 V;
See Figure 15
See Figure 29
P_4.2.3
Undervoltage shutdown
VS(UV)
3
3.5
4.1
V
1)
VIN = 4.5 V
VDEN = 0 V
RL = 12
From VDS < 1 V;
to IOUT = 0 A
See Figure 15
See Figure 30
P_4.2.4
Undervoltage shutdown
hysteresis
VS(UV)_HYS
–
850
–
mV
2)
P_4.2.13
Operating current
One channel active
IGND_1
–
5.5
9
mA
VIN = 5.5 V
VDEN = 5.5 V
Device in RDS(ON)
VS = 36 V
See Figure 31
P_4.2.5
Operating current
All channels active
IGND_2
–
9
12
mA
VIN = 5.5 V
VDEN = 5.5 V
Device in RDS(ON)
VS = 36 V
See Figure 32
P_4.2.6
Standby current for whole
device with load
IS(OFF)
–
0.1
0.5
µA
1)
P_4.2.7
Data Sheet
10
–
VS = 36 V
VOUT = 0 V
VIN floating
VDEN floating
TJ 85 °C
See Figure 33
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
General Product Characteristics
Table 3
Functional Range (cont’d)TJ = -40 °C to +150 °C; (unless otherwise specified)
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note or
Test Condition
Number
Maximum standby current for
whole device with load
IS(OFF)_150
–
6
15
µA
VS = 36 V
VOUT = 0 V
VIN floating
VDEN floating
TJ = 150 °C
See Figure 33
P_4.2.10
Standby current for whole
device with load, diagnostic
active
IS(OFF_DEN)
–
0.6
–
mA
2)
P_4.2.8
VS = 36 V
VOUT = 0 V
VIN floating
VDEN = 5.5 V
1) Test at TJ = -40°C only
2) Not subject to production test. Specified by design.
Note:
Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table.
4.3
Thermal Resistance
Table 4
Thermal Resistance
Parameter
Junction to soldering point
Junction to ambient
Both channels active
Symbol
RthJS
RthJA
Values
Min.
Typ.
Max.
–
5
–
–
29
–
Unit
Note or
Test Condition
Number
K/W
1)
P_4.3.1
K/W
1) 2)
P_4.3.2
1) Not subject to production test. Specified by design.
2) Specified Rthja value is according to JEDEC JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The product (chip +
package) was simulated on a 76.4 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70 µm Cu, 2 x 35 µm Cu). Where
applicable, a thermal via array under the exposed pad contacts the first inner copper layer. Please refer to Figure 4.
Data Sheet
11
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
General Product Characteristics
4.3.1
PCB set up
Figure 4
2s2p PCB Cross Section
S
thermique SO14.vsd
Figure 5
PC Board Top and Bottom View for Thermal Simulation with 600 mm² Cooling Area
Data Sheet
12
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
General Product Characteristics
4.3.2
Thermal Impedance
Figure 6
Typical Thermal Impedance. 2s2p set up according Figure 4
Figure 7
Typical Thermal Resistance. PCB set up 1s0p
Data Sheet
13
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Power Stage
5
Power Stage
The power stages are built using an N-channel vertical power MOSFET (DMOS) with charge pump.
5.1
Output ON-state Resistance
The ON-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature TJ. Figure 8
shows the dependencies in terms of temperature and supply voltage for the typical ON-state resistance. The
behavior in reverse polarity is described in Chapter 6.4.
Figure 8
Typical ON-state Resistance
A high signal (see Chapter 8) at the input pin causes the power DMOS to switch ON with a dedicated slope, which
is optimized in terms of EMC emission.
5.2
Turn ON/OFF Characteristics with Resistive Load
Figure 9 shows the typical timing when switching a resistive load.
IN _H
IN _L
OUT
ON
OFF
ON
S
OFF_DELAY
S
S
ON_DEL AY
OFF
S
Figure 9
Data Sheet
Switching a Resistive Load Timing
14
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Power Stage
5.3
Inductive Load
5.3.1
Output Clamping
When switching OFF inductive loads with high side switches, the voltage VOUT drops below ground potential,
because the inductance intends to continue driving the current. To prevent the destruction of the device by
avalanche due to high voltages, there is a voltage clamp mechanism ZDS(AZ) implemented that limits negative
output voltage to a certain level (VS - VDS(AZ)). Please refer to Figure 10 and Figure 11 for details. Nevertheless, the
maximum allowed load inductance is limited.
Figure 10
Output Clamp (OUT0 and OUT1)
Figure 11
Switching an Inductive Load Timing
Data Sheet
15
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Power Stage
5.3.2
Maximum Load Inductance
During demagnetization of inductive loads, energy has to be dissipated in the BTT6030-2EKB. This energy can be
calculated with following equation:
E = V DS
L
RL
------
AZ
VS z VDS AZ
-------------------------------RL
R
I
L
L
ln 1 z -------------------------------+ IL
V S z V DS AZ
(5.1)
The following equation simplifies under the assumption of RL = 0 .
2
1
E = --- L I
2
V
(5.2)
S
1 z -------------------------------V S z V DS AZ
The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 12 for the
maximum allowed energy dissipation as a function of the load current.
Figure 12
Data Sheet
Maximum Energy Dissipation Single Pulse, TJ(0) = 150 °C; VS = 28 V
16
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Power Stage
5.4
Inverse Current Capability
In case of inverse current, meaning a voltage VINV at the OUTput higher than the supply voltage VS, a current IINV
will flow from output to VS pin via the body diode of the power transistor (please refer to Figure 13). The output
stage follows the state of the IN pin, except if the IN pin goes from OFF to ON during inverse. In that particular
case, the output stage is kept OFF until the inverse current disappears. Nevertheless, the current IINV should not
be higher than IL(INV). Otherwise, the second channel can be corrupted and erratic behavior can be observed. If the
affected channel is OFF, the diagnostic will detect an open load at OFF. If the affected channel is ON, the
diagnostic will detect open load at ON (the overtemperature signal is inhibited). At the appearance of VINV, a
parasitic diagnostic can be observed at the unaffected channel. After, the diagnosis is valid and reflects the
output state. At VINV vanishing, the diagnosis is valid and reflects the output state. During inverse current, no
protection function are available.
&%8
-2:
+2(
Figure 13
Data Sheet
Inverse Current Circuitry
17
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Power Stage
5.5
Electrical Characteristics Power Stage
Table 5
Electrical Characteristics: Power Stage
VS = 8 V to 36 V, TJ = -40 °C to +150 °C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note or
Test Condition
Number
ON-state resistance per
channel
RDS(ON)_150
40
55
62
m
IL = IL4 = 7 A
VIN = 4.5 V
TJ = 150 °C
See Figure 8
P_5.5.1
ON-state resistance per
channel
RDS(ON)_25
–
32
–
m
1)
P_5.5.21
Nominal load current
One channel active
IL(NOM)1
–
6
–
A
1)
Nominal load current
All channels active
IL(NOM)2
–
4
–
A
Output voltage drop limitation VDS(NL)
at small load currents
–
10
22
mV
IL = IL0 = 50 mA
See Figure 34
P_5.5.4
Drain to source clamping
voltage
VDS(AZ) = (VS - VOUT)
VDS(AZ)
66
70
75
V
IDS = 20 mA
See Figure 11
See Figure 35
P_5.5.5
Output leakage current per
channel; TJ 85 °C
IL(OFF)
–
0.05
0.5
µA
2)
VIN floating
VOUT = 0 V
TJ 85°C
P_5.5.6
Output leakage current per
channel; TJ = 150 °C
IL(OFF)_150
–
2
10
µA
VIN floating
VOUT = 0 V
TJ = 150 °C
P_5.5.8
RL = 12
VS = 28 V
See Figure 9
See Figure 36
See Figure 37
See Figure 38
See Figure 39
See Figure 40
P_5.5.11
TJ = 25 °C
TA = 85 °C
TJ < 150 °C
P_5.5.2
P_5.5.3
Slew rate
30% to 70% VS
V/dtON
0.3
0.8
1.4
V/µs
Slew rate
70% to 30% VS
- V/dtOFF
0.3
0.8
1.4
V/µs
-0.15
0
0.15
V/µs
Turn-ON time to VOUT = 90% VS tON
20
50
150
µs
Turn-OFF time to VOUT = 10% VS tOFF
20
55
150
µs
P_5.5.15
Turn-ON / OFF matching
tOFF - tON
-50
0
50
µs
P_5.5.16
Turn-ON time to VOUT = 10% VS tON_delay
–
30
70
µs
P_5.5.17
Turn-OFF time to VOUT = 90% VS tOFF_delay
–
30
70
µs
P_5.5.18
Slew rate matching
dV/dtON - dV/dtOFF
Data Sheet
dV/dt
tSW
18
P_5.5.12
P_5.5.13
P_5.5.14
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Power Stage
Table 5
Electrical Characteristics: Power Stage (cont’d)
VS = 8 V to 36 V, TJ = -40 °C to +150 °C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note or
Test Condition
Number
Switch ON energy
EON
–
0.6
–
mJ
1)
RL = 12
VOUT = 90% VS
VS = 36 V
See Figure 41
P_5.5.19
Switch OFF energy
EOFF
–
0.8
–
mJ
1)
P_5.5.20
RL = 12
VOUT = 10% VS
VS = 36 V
See Figure 42
1) Not subject to production test, specified by design.
2) Test at TJ = -40°C only
Data Sheet
19
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Protection Functions
6
Protection Functions
The device provides integrated protection functions. These functions are designed to prevent the destruction of
the IC from fault conditions described in the data sheet. Fault conditions are considered as “outside” normal
operating range. Protection functions are designed for neither continuous nor repetitive operation.
6.1
Loss of Ground Protection
In case of loss of the module ground and the load remains connected to ground, the device protects itself by
automatically turning OFF (when it was previously ON) or remains OFF, regardless of the voltage applied on IN
pins.
In case of loss of device ground, it’s recommended to use input resistors between the microcontroller and the
BTT6030-2EKB to ensure switching OFF of the channels.
In case of loss of module or device ground, a current (IOUT(GND)) can flow out of the DMOS illustrated in Figure 14.
ZGND is recommended to be a resistor in series to a diode.
>-7%>
:7
>(%>
-7
67)27)
:&%8
>(7%>
(7)0
6(7)0
()2
6()2
-2
6-2
-398+2(
03+-'
-2
6-2
398
>()7(
+2(
6-7
>+2(
0SWWSJKVSYRHTVSXIGXMSRWZK
Figure 14
Loss of Ground Protection with External Components
6.2
Undervoltage Protection
Between VS(UV) and VS(OP), the undervoltage mechanism is triggered. VS(OP) represents the minimum voltage where
the switching ON and OFF can takes place. VS(UV) represents the minimum voltage the switch can hold ON. If the
supply voltage is below the undervoltage mechanism VS(UV), the device is OFF (turns OFF). As soon as the supply
voltage is above the undervoltage mechanism VS(OP), then the device can be switched ON. When the switch is ON,
protection functions are operational. Nevertheless, the diagnosis is not guaranteed until VS is in the VNOM range.
Figure 15 illustrates the undervoltage mechanism.
Data Sheet
20
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Protection Functions
Figure 15
Undervoltage Behavior
6.3
Overvoltage Protection
There is an integrated clamp mechanism for overvoltage protection (ZD(AZ)). To guarantee this mechanism
operates properly in the application, the current in the Zener diode has to be limited by a ground resistor.
Figure 16 shows a typical application to withstand overvoltage issues. In case of supply voltage higher than VS(AZ),
the power transistor switches ON and the voltage across the logic section is clamped. As a result, the internal
ground potential rises to VS - VS(AZ). Due to the ESD Zener diodes, the potential at pin IN and DEN rises almost to
that potential, depending on the impedance of the connected circuitry. In the case the device was ON, prior to
overvoltage, the BTT6030-2EKB remains ON. In the case the BTT6030-2EKB was OFF, prior to overvoltage, the
power transistor can be activated. In the case the supply voltage is in above VBAT(SC) and below VDS(AZ), the output
transistor is still operational and follows the input. If at least one channel is in the ON state, parameters are no
longer guaranteed and lifetime is reduced compared to the nominal supply voltage range. This especially
impacts the short circuit robustness, as well as the maximum energy EAS capability.
73:
-7%>
7
(%>
(7%>
&%8
7)27)
(7)0
()2
-2
-2
)7(
-7
+2(
3ZIVZSPXEKITVSXIGXMSRWZK
Figure 16
Data Sheet
Overvoltage Protection with External Components
21
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Protection Functions
6.4
Reverse Polarity Protection
In case of reverse polarity, the intrinsic body diodes of the power DMOS causes power dissipation. The current in
this intrinsic body diode is limited by the load itself. Additionally, the current into the ground path and the logic
pins has to be limited to the maximum current described in Chapter 4.1 with an external resistor. Figure 17 shows
a typical application. RGND resistor is used to limit the current in the Zener protection of the device. Resistors RDSEL,
RDEN, and RIN are used to limit the current in the logic of the device and in the ESD protection stage. RSENSE is used
to limit the current in the sense transistor which behaves as a diode. The recommended value for RDEN = RDSEL =
RIN = RSENSE = 10 k . ZGND is recommended to be a resistor in series to a diode.
During reverse polarity, no protection functions are available.
Figure 17
Data Sheet
Reverse Polarity Protection with External Components
22
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Protection Functions
6.5
Overload Protection
In case of overload, such as high inrush of cold lamp filament, or short circuit to ground, the BTT6030-2EKB offers
several protection mechanisms.
6.5.1
Current Limitation
At first step, the instantaneous power in the switch is maintained at a safe value by limiting the current to the
maximum current allowed in the switch IL(SC). During this time, the DMOS temperature is increasing, which affects
the current flowing in the DMOS. The current limitation value is VDS dependent. Figure 18 shows the behavior of
the current limitation as a function of the drain to source voltage.
60
50
40
30
20
10
0
2
7
12
17
22
27
32
Drain Source Voltage VDS (V)
Figure 18
Data Sheet
Current Limitation (typical behavior)
23
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Protection Functions
6.5.2
Temperature Limitation in the Power DMOS
Each channel incorporates both an absolute (TJ(SC)) and a dynamic (TJ(SW)) temperature sensor. Activation of
either sensor will cause an overheated channel to switch OFF to prevent destruction. Any protective switch OFF
latches the output until the temperature has reached an acceptable value illustrated in Figure 19.
No retry strategy is implemented such that when the DMOS temperature has cooled down enough, the switch is
switched ON again. Only the IN pin signal toggling can re-activate the power stage. (latch behavior).
Figure 19
Overload Protection
Note:
For better understanding, the time scale is not linear. The real timing of this drawing is application
dependant and cannot be described.
Data Sheet
24
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Protection Functions
6.6
Electrical Characteristics for the Protection Functions
Table 6
Electrical Characteristics: Protection
VS = 8 V to 36 V, TJ = -40 °C to +150 °C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter
Symbol
Values
Unit
Note or
Test Condition
Number
Min.
Typ.
Max.
IOUT(GND)
–
0.1
–
mA
1) 2)
VS = 48 V
See Figure 14
P_6.6.1
VDS(REV)
200
610
700
mV
IL = - 4 A
TJ = 150 °C
See Figure 17
P_6.6.2
VS(AZ)
65
70
75
V
ISOV = 5 mA
See Figure 16
P_6.6.3
Load current limitation
IL5(SC)
40
50
60
A
3)
VDS = 5 V
See Figure 43
P_6.6.4
Load current limitation
IL28(SC)
–
25
–
A
2)
VDS = 42 V
See Figure 44
P_6.6.7
–
80
–
K
4)
See Figure 19
P_6.6.8
150
170 4)
200 4)
°C
5)
See Figure 19
P_6.6.10
–
30
–
K
5) 4)
Loss of Ground
Output leakage current while
GND disconnected
Reverse Polarity
Drain source diode voltage
during reverse polarity
Overvoltage
Overvoltage protection
Overload Condition
Dynamic temperature increase
while switching
Thermal shutdown
temperature
Thermal shutdown hysteresis
1)
2)
3)
4)
5)
TJ(SW)
TJ(SC)
TJ(SC)
See Figure 19
P_6.6.11
All pins are disconnected except VS and OUT.
Not Subject to production test, specified by design
Test at TJ = -40°C only
Functional test only
Test at TJ = +150°C only
Data Sheet
25
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Diagnostic Functions
7
Diagnostic Functions
For diagnosis purpose, the BTT6030-2EKB provides a combination of digital and analog signals at pin IS. These
signals are called SENSE. In case the diagnostic is disabled via DEN, pin IS becomes high impedance. In case DEN
is activated, the sense current of the channel X is enabled/disabled via associated pin DSEL. Table 7 gives the
truth table.
Table 7
Diagnostic Truth Table
DEN
DSEL
IS
0
don’t care
Z
1
0
Sense output 0 IIS(0)
1
1
Sense output 1 IIS(1)
7.1
IS Pin
The BTT6030-2EKB provides a SENSE current written IIS at pin IS. As long as no “hard” failure mode occurs (short
circuit to GND / current limitation / overtemperature / excessive dynamic temperature increase or open load at
OFF) a proportional signal to the load current (ratio kILIS = IL / IIS) is provided. The complete IS pin and diagnostic
mechanism is described on Figure 20. The accuracy of the SENSE depends on temperature and load current. The
IS pin multiplexes the current IIS(0) and IIS(1), via the pin DSEL. Thanks to this multiplexing, the matching between
kILISCHANNEL0 and kILISCHANNEL1 is optimized. Due to the ESD protection, in connection to VS, it is not recommended
to share the IS pin with other devices if these devices are using another battery feed. The consequence is that the
unsupplied device would be fed via the IS pin of the supplied device.
Figure 20
Data Sheet
Diagnostic Block Diagram
26
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Diagnostic Functions
7.2
SENSE Signal in Different Operating Modes
Table 8 gives a quick reference for the state of the IS pin during device operation.
Table 8
Sense Signal, Function of Operation Mode
Operation Mode
Input level Channel X
DEN1)
Output Level Diagnostic Output
Normal operation
OFF
H
Z
Z
Short circuit to GND
~ GND
Z
Overtemperature
Z
Z
Short circuit to VS
VS
IIS(FAULT)
Open Load
< VOL(OFF)
> VOL(OFF)2)
Z
IIS(FAULT)
Inverse current
~ VINV
IIS(FAULT)
~ VS
IIS = IL / kILIS
Current limitation
< VS
IIS(FAULT)
Short circuit to GND
~ GND
IIS(FAULT)
Overtemperature TJ(SW)
event
Z
IIS(FAULT)
Short circuit to VS
VS
Normal operation
ON
IIS < IL / kILIS
3)
Open Load
~ VS
Inverse current
~ VINV
IIS < IIS(OL)4)
Underload
~ VS5)
IIS(OL) < IIS < IL / kILIS
Don’t care
Z
Don’t care
1)
2)
3)
4)
5)
Don’t care
L
IIS < IIS(OL)
The table doesn’t indicate but it is assumed that the appropriate channel is selected via the DSEL pin.
With additional pull-up resistor.
The output current has to be smaller than IL(OL).
After maximum tINV.
The output current has to be higher than IL(OL).
Data Sheet
27
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Diagnostic Functions
7.3
SENSE Signal in the Nominal Current Range
Figure 21 show the current sense as a function of the load current in the power DMOS. Usually, a pull-down
resistor RIS is connected to the IS pin. This resistor has to be higher than 560 to limit the power losses in the
sense circuitry. A typical value is 1.2 k . The blue curve represents the ideal SENSE, assuming an ideal kILIS factor
value. The red curves show the accuracy the device provides across full temperature range, at a defined current.
QMRQE\7IRWI'YVVIRX
X]TMGEP7IRWI'YVVIRX
-0?%A
&88)/&
Figure 21
Current Sense for Nominal Load
7.3.1
SENSE Signal Variation as a Function of Temperature and Load Current
In some applications a better accuracy is required around half the nominal current IL(NOM). To achieve this
accuracy requirement, a calibration on the application is possible. To avoid multiple calibration points at
different load and temperature conditions, the BTT6030-2EKB allows limited derating of the k ILIS value, at
nominal load current (IL3; TJ = +25 °C). This derating is described by the parameter kILIS. Figure 22 shows the
behavior of the SENSE current, assuming one calibration point at nominal load at +25 °C.
The blue line indicates the ideal kILIS ratio.
The green lines indicate the derating on the parameter across temperature and voltage, assuming one
calibration point at nominal temperature and nominal battery voltage.
The red lines indicate the kILIS accuracy without calibration.
Data Sheet
28
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Diagnostic Functions
GEPMFVEXIHO -0-7
QMRQE\O -0-7
X]TMGEPO -0-7
-0?%A
Figure 22
Improved SENSE Accuracy with One Calibration Point
7.3.2
SENSE Signal Timing
&88)/&
Figure 23 shows the timing during settling and disabling of the SENSE.
L
IS
Figure 23
Data Sheet
SENSE Settling / Disabling Timing
29
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Diagnostic Functions
7.3.3
SENSE Signal in Open Load
7.3.3.1
Open Load in ON Diagnostic
If the channel is ON, a leakage current can still flow through an open load, for example due to humidity. The
parameter IL(OL) gives the threshold of recognition for this leakage current. If the current IL flowing out the power
DMOS is below this value, the device recognizes a failure, if the DEN (and DSEL) is selected. In that case, the SENSE
current is below IIS(OL). Otherwise, the minimum SENSE current is given above parameter IIS(OL). Figure 24 shows
the SENSE current behavior in this area. The red curve shows a typical product curve. The blue curve shows the
ideal kILIS ratio.
Figure 24
Current Sense Ratio for Low Currents
7.3.3.2
Open Load in OFF Diagnostic
For open load diagnosis in OFF-state, an external output pull-up resistor (ROL) is recommended. For the
calculation of pull-up resistor value, the leakage currents and the open load threshold voltage VOL(OFF) have to be
taken into account. Figure 25 gives a sketch of the situation. Ileakage defines the leakage current in the complete
system, including IL(OFF) (see Chapter 5.5) and external leakages, e.g, due to humidity, corrosion, etc.... in the
application.
To reduce the stand-by current of the system, an open load resistor switch SOL is recommended. If the channel x
is OFF, the output is no longer pulled down by the load and VOUT voltage rises to nearly VS. This is recognized by
the device as an open load. The voltage threshold is given by VOL(OFF). In that case, the SENSE signal is switched to
the IIS(FAULT).
An additional RPD resistor can be used to pull VOUT to 0 V. Otherwise, the OUT pin is floating. This resistor can be
used as well for short circuit to battery detection, see Chapter 7.3.4.
Data Sheet
30
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Diagnostic Functions
FEX
30
30
-7
+2(
4(
PIEOEKI
Figure 25
Open Load Detection in OFF Electrical Equivalent Circuit
7.3.3.3
Open Load Diagnostic Timing
Figure 26 shows the timing during either Open Load in ON or OFF condition. Please note that a delay
tsIS(FAULT_OL_OFF) has to be respected after the rising edge of the DEN, when applying an open load in OFF diagnosis
request, otherwise the diagnosis can be wrong.
Figure 26
Data Sheet
SENSE Signal in Open Load Timing
31
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Diagnostic Functions
7.3.4
SENSE Signal with OUT in Short Circuit to VS
In case of a short circuit between the OUTput-pin and the VS pin, all or portion (depending on the short circuit
impedance) of the load current will flow through the short circuit. As a result, a lower current compared to the
normal operation will flow through the DMOS of the BTT6030-2EKB, which can be recognized at the SENSE signal.
The open load at OFF detection circuitry can also be used to distinguish a short circuit to VS. In that case, an
external resistor to ground RSC_VS is required illustrated in Figure 27.
:FEX
:7
-7*%908
&%8
30
GSQT
-7
398
303**
+2(
6-7
>+2(
67'C:7
7LSVXGMVGYMXXS:WWZK
Figure 27
Short Circuit to Battery Detection in OFF Electrical Equivalent Circuit
7.3.5
SENSE Signal in Case of Overload
An overload condition is defined by a current flowing out of the DMOS reaching the current limitation and / or the
absolute dynamic temperature swing TJ(SW) is reached, and / or the junction temperature reaches the thermal
shutdown temperature TJ(SC). Please refer to Chapter 6.5 for details.
In that case, the SENSE signal given is by IIS(FAULT) when the diagnostic is selected.
The device has a thermal latch behavior, such that when the overtemperature or the exceed dynamic
temperature condition has disappeared, the DMOS is reactivated only when the IN is toggled LOW to HIGH. If the
DEN pin is activated, and DSEL pin is selected to the correct channel, the SENSE follows the output stage. If no
reset of the latch occurs, the device remains in the latching phase and IIS(FAULT) at the IS pin, eventhough the DMOS
is OFF.
7.3.6
SENSE Signal in Case of Inverse Current
In the case of inverse current, the sense signal of the affected channel will indicate open load in OFF state during
OFF state and indicate open load in ON during ON state. The unaffected channel indicates normal behavior as
long as the IINV current is not exceeding the maximum value specified in Chapter 5.4.
Data Sheet
32
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Diagnostic Functions
7.4
Electrical Characteristics Diagnostic Function
Table 9
Electrical Characteristics: Diagnostics
VS = 8 V to 36 V, TJ = -40 °C to +150 °C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter
Symbol
Values
Unit Note or Test Condition
Min.
Typ.
Max.
Number
Load Condition Threshold for Diagnostic
Open load detection
threshold in OFF state
VS - VOL(OFF)
4
–
6
V
1)
VIN = 0 V
VDEN = 4.5 V
See Figure 26
P_7.5.1
Open load detection
threshold in ON state
IL(OL)
4
–
25
mA
VIN = VDEN = 4.5 V
IIS(OL) = 5 µA
See Figure 24
See Figure 46
P_7.5.2
–
0.02
1
µA
1)
VIN = 4.5 V
VDEN = 0 V
IL = IL4 = 7 A
P_7.5.4
–
3.5
V
2)
VIN = 0 V
VOUT = VS > 10 V
VDEN = 4.5 V
IIS = 6 mA
See Figure 47
P_7.5.6
6
15
40
mA
VIS = VIN = VDSEL = 0 V
VOUT = VS > 10 V
VDEN = 4.5 V
See Figure 20
See Figure 48
P_7.5.7
65
70
75
V
IIS = 5 mA
See Figure 20
P_7.5.3
Sense Pin
IS pin leakage current when IIS_(DIS)
sense is disabled
Sense signal saturation
voltage
VS- VIS (RANGE) 1
Sense signal maximum
current in fault condition
IIS(FAULT)
Sense pin maximum voltage VIS(AZ)
Current Sense Ratio Signal in the Nominal Area, Stable Load Current Condition
Current sense ratio
IL0 = 50 mA
kILIS0
-50%
2450
+50%
Current sense ratio
IL1 = 0.5 A
kILIS1
-25%
2360
+25%
Current sense ratio
IL2 = 2 A
kILIS2
-12%
2240
+12%
P_7.5.10
Current sense ratio
IL3 = 4 A
kILIS3
-9%
2240
+9%
P_7.5.11
Current sense ratio
IL4 = 7 A
kILIS4
-8%
2240
+8%
P_7.5.12
-5
0
+5
kILIS derating with current
and temperature
Data Sheet
kILIS
33
VIN = 4.5 V
VDEN = 4.5 V
See Figure 21
TJ = -40 °C; 150 °C
%
2)
kILIS3 versus kILIS2
See Figure 22
P_7.5.8
P_7.5.9
P_7.5.17
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Diagnostic Functions
Table 9
Electrical Characteristics: Diagnostics (cont’d)
VS = 8 V to 36 V, TJ = -40 °C to +150 °C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter
Symbol
Values
Unit Note or Test Condition
Number
Min.
Typ.
Max.
Current sense settling time tsIS(ON)
to kILIS function stable after
positive input slope on both
INput and DEN
–
–
150
µs
2)
VDEN = VIN = 0 to 4.5 V
VS = 28 V
RIS = 1.2 k
CSENSE < 100 pF
IL = IL3 = 4 A
See Figure 23
P_7.5.18
Current sense settling time tsIS(ON_DEN)
with load current stable and
transition of the DEN
–
–
10
µs
1)
VIN = 4.5 V
VDEN = 0 to 4.5 V
RIS = 1.2 k
CSENSE < 100 pF
IL = IL3 = 4 A
See Figure 23
P_7.5.19
Current sense settling time
to IIS stable after positive
input slope on current load
–
–
20
µs
1)
VIN = 4.5 V
P_7.5.20
VDEN = 4.5 V
RIS = 1.2 k
CSENSE < 100 pF
IL = IL2 = 2 A to IL = IL3 = 4 A
See Figure 23
tsIS(FAULT_OL_ –
–
100
µs
1)
–
150
µs
VIN = VDEN = 0 to 4.5 V
RIS = 1.2 k
CSENSE < 100 pF
VDS = 24 V
See Figure 19
P_7.5.24
350
–
µs
2)
P_7.5.32
Diagnostic Timing in Normal Condition
tsIS(LC)
Diagnostic Timing in Open Load Condition
Current sense settling time
to IIS stable for open load
detection in OFF state
OFF)
VIN = 0V
VDEN = 0 to 4.5 V
RIS = 1.2 k
CSENSE < 100 pF
VOUT = VS = 28 V
See Figure 26
P_7.5.22
Diagnostic Timing in Overload Condition
Current sense settling time
to IIS stable for overload
detection
tsIS(FAULT)
Current sense over current
blanking time
tsIS(OC_blank) –
Data Sheet
–
34
2)
VIN = VDEN = 4.5 V
RIS = 1.2 k
CSENSE < 100 pF
VDS = 5 V to 0 V
See Figure 19
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Diagnostic Functions
Table 9
Electrical Characteristics: Diagnostics (cont’d)
VS = 8 V to 36 V, TJ = -40 °C to +150 °C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter
Symbol
Values
Unit Note or Test Condition
Number
Min.
Typ.
Max.
tsIS(OFF)
–
–
20
µs
1)
VIN = 4.5 V
VDEN = 4.5 V to 0 V
RIS = 1.2 k
CSENSE < 100 pF
IL = IL3 = 4 A
See Figure 23
P_7.5.25
Current sense settling time tsIS(ChC)
from one channel to another
–
–
20
µs
VIN0 = VIN1 = 4.5 V
VDEN = 4.5 V
VDSEL = 0 to 4.5 V
RIS = 1.2 k
CSENSE < 100 pF
IL(OUT0) = IL3 = 4 A
IL(OUT1) = IL3 = 2 A
See Figure 23
P_7.5.26
Diagnostic disable time
DEN transition to
IIS < 50% IL /kILIS
1) DSEL pin select channel 0 only.
2) Not subject to production test, specified by design
Data Sheet
35
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Input Pins
8
Input Pins
8.1
Input Circuitry
The input circuitry is compatible with 3.3 and 5 V microcontrollers. The concept of the input pin is to react to
voltage thresholds. An implemented Schmitt trigger avoids any undefined state if the voltage on the input pin is
slowly increasing or decreasing. The output is either OFF or ON but cannot be in a linear or undefined state. The
input circuitry is compatible with PWM applications. Figure 28 shows the electrical equivalent input circuitry. In
case the pin is not needed, it must be left opened, or must be connected to device ground (and not module
ground) via a 4.7 k input resistor.
Figure 28
Input Pin Circuitry
8.2
DEN / DSEL Pin
The DEN / DSEL pins enable and disable the diagnostic functionality of the device. The pins have the same
structure to INput pins, please refer to Figure 28.
8.3
Input Pin Voltage
The IN, DSEL and DEN use a comparator with hysteresis. The switching ON / OFF takes place in a defined region,
set by the thresholds VIN(L) Max. and VIN(H) Min. The exact value where the ON and OFF take place are unknown and
depends on the process, as well as the temperature. To avoid cross talk and parasitic turn ON and OFF, a
hysteresis is implemented. This ensures a certain immunity to noise.
Data Sheet
36
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Input Pins
8.4
Electrical Characteristics
Table 10
Electrical Characteristics: Input Pins
VS = 8 V to 36 V, TJ = -40 °C to +150 °C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter
Symbol
Values
Unit
Note or
Test Condition
Number
Min.
Typ.
Max.
Low level input voltage range VIN(L)
-0.3
–
0.8
V
See Figure 49
P_8.4.1
High level input voltage range VIN(H)
2
–
6
V
See Figure 50
P_8.4.2
P_8.4.3
INput Pins Characteristics
Input voltage hysteresis
VIN(HYS)
–
250
–
mV
1)
Low level input current
IIN(L)
1
10
25
µA
VIN = 0.8 V
P_8.4.4
High level input current
IIN(H)
2
10
25
µA
VIN = 5.5 V
See Figure 52
P_8.4.5
Low level input voltage range VDEN(L)
-0.3
–
0.8
V
–
P_8.4.6
High level input voltage range VDEN(H)
2
–
6
V
–
P_8.4.7
P_8.4.8
See Figure 51
DEN Pin
Input voltage hysteresis
VDEN(HYS)
–
250
–
mV
1)
Low level input current
IDEN(L)
1
10
25
µA
VDEN = 0.8 V
P_8.4.9
High level input current
IDEN(H)
2
10
25
µA
VDEN = 5.5 V
P_8.4.10
Low level input voltage range VDSEL(L)
-0.3
–
0.8
V
–
P_8.4.11
High level input voltage range VDSEL(H)
2
–
6
V
–
P_8.4.12
P_8.4.13
DSEL Pin
Input voltage hysteresis
VDSEL(HYS)
–
250
–
mV
1)
Low level input current
IDSEL(L)
1
10
25
µA
VDSEL = 0.8 V
P_8.4.14
High level input current
IDSEL(H)
2
10
25
µA
VDSEL = 5.5 V
P_8.4.15
1) Not subject to production test, specified by design
Data Sheet
37
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Characterization Results
9
Characterization Results
The characterization have been performed on 3 lots, with 3 devices each. Characterization have been performed
at 8 V, 28 V and 36 V, from -40°C to 150°C. When no dependency to voltage is seen, only one curve (28 V) is
sketched.
9.1
General Product Characteristics
9.1.1
Minimum Functional Supply Voltage
P_4.2.3
Figure 29
Minimum Functional Supply Voltage VS(OP)_MIN = f(TJ)
9.1.2
Undervoltage Shutdown
P_4.2.4
Figure 30
Data Sheet
Undervoltage Threshold VS(UV) = f(TJ)
38
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Characterization Results
9.1.3
Current Consumption One Channel Active
P_4.2.5
Figure 31
Current Consumption for Whole Device with Load. One Channel Active IGND_1 = f(TJ;VS)
9.1.4
Current Consumption Two Channels Active
P_4.2.6
Figure 32
Current Consumption for Whole Device with Load. Two Channels Active IGND_2 = f(TJ;VS)
9.1.5
Standby Current for Whole Device with Load
P_4.2.7, P_4.2.10
Figure 33
Data Sheet
Standby Current for Whole Device with Load. IS(OFF) = f(TJ;VS)
39
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Characterization Results
9.2
Power Stage
9.2.1
Output Voltage Drop Limitation at Low Load Current
P_5.5.4
Figure 34
Output Voltage Drop Limitation at Low Load Current VDS(NL) = f(TJ;VS) ; IL = IL(0) = 50 mA
9.2.2
Drain to Source Clamp Voltage
P_5.5.5
Figure 35
Drain to Source Clamp Voltage VDS(AZ) = f(TJ)
Data Sheet
40
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Characterization Results
9.2.3
Slew Rate at Turn ON
P_5.5.11
Figure 36
Slew Rate at Turn ON dV/dtON = f(TJ;VS), RL = 12
9.2.4
Slew Rate at Turn OFF
P_5.5.12
Figure 37
Slew Rate at Turn OFF - dV/dtOFF = f(TJ;VS), RL = 12
9.2.5
Turn ON
P_5.5.14
Figure 38
Data Sheet
Turn ON tON = f(TJ;VS), RL = 12
41
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Characterization Results
9.2.6
Turn OFF
P_5.5.15
Figure 39
Turn OFF tOFF = f(TJ;VS), RL = 12
9.2.7
Turn ON / OFF matching
P_5.5.16
Figure 40
Data Sheet
Turn ON / OFF matching tSW = f(TJ;VS), RL = 12
42
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Characterization Results
9.2.8
Switch ON Energy
P_5.5.19
Figure 41
Switch ON Energy EON = f(TJ;VS), RL = 12
9.2.9
Switch OFF Energy
P_5.5.20
Figure 42
Data Sheet
Switch OFF Energy EOFF = f(TJ;VS), RL = 12
43
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Characterization Results
9.3
Protection Functions
9.3.1
Overload Condition in the Low Voltage Area
P_6.6.4
Figure 43
Overload Condition in the Low Voltage Area IL5(SC) = f(TJ;VS)
9.3.2
Overload Condition in the High Voltage Area
P_6.6.7
Figure 44
Data Sheet
Overload Condition in the High Voltage Area IL28(SC) = f(TJ;VS)
44
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Characterization Results
9.4
Diagnostic Mechanism
9.4.1
Current Sense at no Load
Figure 45
Current Sense at no Load IL(OL) = f(TJ;VS), IL = 0
9.4.2
Open Load Detection Threshold in ON State
P_7.5.2
Figure 46
Data Sheet
Open Load Detection ON State Threshold IL(OL) = f(TJ;VS)
45
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Characterization Results
9.4.3
Sense Signal Maximum Voltage
P_7.5.6
Figure 47
Sense Signal Maximum Voltage VS - VIS(RANGE) =f(TJ;VS)
9.4.4
Sense Signal maximum Current
P_7.5.7
Figure 48
Data Sheet
Sense Signal Maximum Current in Fault Condition IIS(FAULT) = f(TJ;VS)
46
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Characterization Results
9.5
Input Pins
9.5.1
Input Voltage Threshold ON to OFF
P_8.4.1
Figure 49
Input Voltage Threshold VIN(L) = f(TJ;VS)
9.5.2
Input Voltage Threshold OFF to ON
P_8.4.2
Figure 50
Data Sheet
Input Voltage Threshold VIN(H) = f(TJ;VS)
47
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Characterization Results
9.5.3
Input Voltage Hysteresis
P_8.4.3
Figure 51
Input Voltage Hysteresis VIN(HYS) = f(TJ;VS)
9.5.4
Input Current High Level
P_8.4.5
Figure 52
Data Sheet
Input Current High Level IIN(H) = f(TJ;VS)
48
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Application Information
10
Application Information
Note:
The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.
VBAT
Voltage Regulator
OUT
T1
VS
GND
Z
CVS
VS
VDD
I/O
DEN
RDEN
OUT0
OUT3
I/O
I/O
Micro
controller
I/O
RDSEL
COUT
DSEL
RIN
IN0
RIN
IN1
OUT4
Bulb
OUT1
COUT
A/D
IS
RSENSE
Bulb
GND
GND
CSENSE
D
Figure 53
Application Diagram with BTT6030-2EKB
Note:
This is a very simplified example of an application circuit. The function must be verified in the real
application.
Table 11
Bill of Material
Reference
Value
Purpose
RIN
10 k
Protection of the microcontroller during overvoltage, reverse polarity
Guarantee BTT6030-2EKB channels OFF during loss of ground
RDEN
10 k
Protection of the microcontroller during overvoltage, reverse polarity
RDSEL
10 k
Protection of the microcontroller during overvoltage, reverse polarity
RPD
47 k
Polarization of the output for short circuit to VS detection
Improve BTT6030-2EKB immunity to electomagnetic noise
Data Sheet
49
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Application Information
Table 11
Bill of Material (cont’d)
Reference
Value
Purpose
ROL
1.5 k
Ensures polarization of the BTT6030-2EKB output during open load in OFF
diagnostic
RIS
1.2 k
Sense resistor
RSENSE
4.7 k
Overvoltage, reverse polarity, loss of ground. Value to be tuned with micro
controller specification.
CSENSE
100 pF
Sense signal filtering.
COUT
10 nF
Protection of the device during ESD and BCI
T1
Dual NPN/PNP
Switch the battery voltage for open load in OFF diagnostic
RGND
27
Protection of the BTT6030-2EKB during overvoltage
D
BAS21
Protection of the BTT6030-2EKB during reverse polarity
Z
58 V Zener diode Protection of the device during overvoltage
CVS
100 nF
10.1
Further Application Information
Filtering of voltage spikes at the battery line
•
Please contact us to get the pin FMEA
•
Existing App. Notes
•
For further information you may visit http://www.infineon.com/profet
Data Sheet
50
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Package Outlines
11
Package Outlines
Figure 54
PG-DSO-14-40 EP (Plastic Dual Small Outline Package) (RoHS-Compliant)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Data Sheet
51
Rev. 1.0
2016-08-01
PROFET+ 24V
BTT6030-2EKB
Revision History
Page or Item
Subjects (major changes since previous revision)
Rev. 1.0, 2016-08-01
Document
Data Sheet
Creation of the document
52
Rev. 1.0
2016-08-01
Please read the Important Notice and Warnings at the end of this document
Trademarks of Infineon Technologies AG
µHVIC, µIPM, µPFC, AU-ConvertIR, AURIX, C166, CanPAK, CIPOS, CIPURSE, CoolDP, CoolGaN, COOLiR, CoolMOS, CoolSET, CoolSiC,
DAVE, DI-POL, DirectFET, DrBlade, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, EiceDRIVER, eupec, FCOS, GaNpowIR,
HEXFET, HITFET, HybridPACK, iMOTION, IRAM, ISOFACE, IsoPACK, LEDrivIR, LITIX, MIPAQ, ModSTACK, my-d, NovalithIC, OPTIGA,
OptiMOS, ORIGA, PowIRaudio, PowIRStage, PrimePACK, PrimeSTACK, PROFET, PRO-SIL, RASIC, REAL3, SmartLEWIS, SOLID FLASH,
SPOC, StrongIRFET, SupIRBuck, TEMPFET, TRENCHSTOP, TriCore, UHVIC, XHP, XMC.
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2016-08-01
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Document reference
BTT6030-2EKB
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics ("Beschaffenheitsgarantie").
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer's compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer's products and any use of the product of
Infineon Technologies in customer's applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer's technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to
such application.
Legal Disclaimer for Short-Circuit Capability
Infineon disclaims any warranties and liablilities,
whether expressed or implied, for any short-circuit
failures below the threshold limit.
For further information on technology, delivery terms
and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
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consequences of the use thereof can reasonably be
expected to result in personal injury.