PROFET™+ 24V
BTT6200-4ESA
Feature list
•
•
•
•
•
•
•
•
Quad channel device
Very low stand-by current
3.3 V and 5 V compatible logic inputs
Electrostatic discharge protection (ESD)
Optimized electromagnetic compatibility
Logic ground independent from load ground
Very low power DMOS leakage current in OFF state
Green product (RoHS compliant)
Potential applications
•
•
•
•
Suitable for resistive, inductive and capacitive loads
Replaces electromechanical relays, fuses and discrete circuits
Most suitable for loads with high inrush current, such as lamps
Suitable for 12 V and 24 V trucks and transportation systems
VBAT
Voltage Regulator
OUT
VS
GND
T1
CVDD
Z
CVS
ROL
VS
VDD
RDEN
DEN
I/O
RDSEL
DSEL0
I/O
RDSEL
DSEL1
OUT0
COUT
RPD
I/O
Relay
86
30
85
87
OUT1
COUT
RPD
I/O
Micro
controller
I/O
RIN
IN0
RIN
IN1
I/O
RIN
IN2
I/O
RIN
IN3
+
OUT2
OUT3
RLED
CSENSE
GND
COUT
R5W
LED
RIS
GND
OUT4
RPD
IS
RSENSE
E.C.U.
-
RPD
OUT3
A/D
COUT
RGND
D
Page-1
Figure 1
Application Diagram with BTT6200-4ESA
Product Type
Package
Marking
BTT6200-4ESA
PG-TSDSO-24
BTT62004ESA
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
Rev. 1.00
2019-03-09
PROFET™+ 24V
BTT6200-4ESA
Product summary
Product summary
The BTT6200-4ESA is a 200 mΩ quad channel Smart High-Side Power Switch, embedded in a PG-TSDSO-24
package, providing protective functions and diagnosis.
The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is
integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well
as LEDs in the harsh automotive environment.
Table 1
Product summary
Parameter
Symbol
Value
Operating voltage range
VS(OP)
5 V to 36 V
Maximum supply voltage
VS(LD)
65 V
Maximum ON state resistance at TJ = 150°C per channel
RDS(ON)
400 mΩ
Nominal load current (one channel active)
IL(NOM)1
1.5 A
Nominal load current (all channels active)
IL(NOM)2
1A
Typical current sense ratio
kILIS
300
Minimum current limitation
IL5(SC)
9A
Maximum standby current with load at TJ = 25°C
IS(OFF)
500 nA
Diagnostic functions
•
•
•
•
•
•
Proportional load current sense multiplexed for the 4 channels
Open load detection in ON and OFF
Short circuit to battery and ground indication
Overtemperature switch off detection
Stable diagnostic signal during short circuit
Enhanced kILIS dependency with temperature and load current
Protection functions
•
•
•
•
•
•
Stable behavior during undervoltage
Reverse polarity protection with external components
Secure load turn-off during logic ground disconnection with external components
Overtemperature protection with latch
Overvoltage protection with external components
Enhanced short circuit operation
Product validation
Qualified for Automotive Applications.
Product validation according to AEC-Q100/101.
Datasheet
2
Rev. 1.00
2019-03-09
PROFET™+ 24V
BTT6200-4ESA
Table of contents
Table of contents
Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
2
Block diagram reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
3.1
3.2
3.3
Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Pin assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Voltage and current definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
4.1
4.2
4.3
4.3.1
4.3.2
Electrical characteristics and parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Functional range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
PCB set-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Thermal impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5
5.1
5.2
5.3
5.3.1
5.3.2
5.4
5.5
Power stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Output ON-state resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Turn ON/OFF characteristics with resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Inductive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Output clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Maximum load inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Inverse current capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Electrical characteristics - power stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6
6.1
6.2
6.3
6.4
6.5
6.5.1
6.5.2
6.6
Protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Loss of ground protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Undervoltage protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Overvoltage protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Reverse polarity protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
Overload protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Current limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
Temperature limitation in the power DMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Electrical characteristics for the protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
7
7.1
Diagnostic functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
IS pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
Datasheet
3
Rev. 1.00
2019-03-09
PROFET™+ 24V
BTT6200-4ESA
Table of contents
7.2
7.3
7.3.1
7.3.2
7.3.3
7.3.3.1
7.3.3.2
7.3.3.3
7.3.4
7.3.5
7.3.6
7.4
SENSE signal in different operating modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
SENSE signal in nominal current range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
SENSE signal variation as a function of temperature and load current . . . . . . . . . . . . . . . . . . . . . .28
SENSE signal timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
SENSE signal in open load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Open load in ON diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
Open load in OFF diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Open load diagnostic timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32
SENSE signal in short circuit to VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
SENSE signal in case of overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
SENSE signal in case of inverse current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Electrical characteristics diagnostic function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
8
8.1
8.2
8.3
8.4
Input pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Input circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .39
DEN / DSEL0, 1 pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .39
Input pin voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
9
9.1
9.2
9.3
9.4
9.5
Characterization results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
General product characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Power stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42
Protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Diagnostic mechanism . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Input pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
10
10.1
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Further application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
11
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Datasheet
4
Rev. 1.00
2019-03-09
PROFET™+ 24V
BTT6200-4ESA
Description
1
Description
The BTT6200-4ESA is a 200 mΩ quad channel Smart High-Side Power Switch, embedded in a PG-TSDSO-24
package, providing protective functions and diagnosis.
The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is
integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well
as LEDs in the harsh automotive environment.
Datasheet
5
Rev. 1.00
2019-03-09
PROFET™+ 24V
BTT6200-4ESA
Block diagram reference
2
Block diagram reference
Channel 0
VS
voltage sensor
internal
power
supply
IN0
over
temperature
driver
logic
DEN
gate control
&
charge pump
ESD
protection
T
clamp for
inductive load
over current
switch limit
OUT 0
load current sense and
open load detection
IS
forward voltage drop detection
VS
Channel 1
T
IN1
Control and protection circuit equivalent to channel 0
DSEL0
DSEL1
OUT 1
Channel 2
T
Control and protection circuit equivalent to channel 0
IN2
OUT 2
Channel 3
T
Control and protection circuit equivalent to channel 0
IN3
OUT 3
GND
Figure 2
Datasheet
Block diagram DxS.vsd
Block diagram for BTT6200-4ESA
6
Rev. 1.00
2019-03-09
PROFET™+ 24V
BTT6200-4ESA
Pin configuration
3
Pin configuration
3.1
Pin assignment
NC
IN0
NC
GND
IN1
DEN
IS
DSEL0
IN2
IN3
DSEL1
NC
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
OUT0
NC
NC
NC
OUT1
NC
NC
OUT2
NC
NC
NC
OUT3
PG-TSDSO-24-21_Pinout.vsd
Figure 3
Pin configuration
3.2
Pin definitions and functions
Table 2
Pin definitions and functions
Pin
Symbol
Function
1, 3, 12, 14, 15, 16,
18, 19 , 21, 22, 23
NC
Not Connected; No internal connection to the chip
2
IN0
INput channel 0; Input signal for channel 0 activation
4
GND
GrouND; Ground connection
5
IN1
INput channel 1; Input signal for channel 1 activation
6
DEN
Diagnostic ENable; Digital signal to enable/disable the diagnosis of
the device
7
IS
Sense; Sense current of the selected channel
8
DSEL0
Diagnostic SELection; Digital signal to select the channel to be
diagnosed
9
IN2
INput channel 2; Input signal for channel 2 activation
10
IN3
INput channel 3; Input signal for channel 3 activation
11
DSEL1
Diagnostic SELection; Digital signal to select the channel to be
diagnosed
13
OUT3
OUTput 3; Protected high side power output channel 3
17
OUT2
OUTput 2; Protected high side power output channel 2
20
OUT1
OUTput 1; Protected high side power output channel 1
Datasheet
7
Rev. 1.00
2019-03-09
PROFET™+ 24V
BTT6200-4ESA
Pin configuration
Table 2
Pin definitions and functions (continued)
Pin
Symbol
Function
24
OUT0
OUTput 0; Protected high side power output channel 0
Cooling tab
VS
Voltage Supply; Battery voltage
3.3
Voltage and current definition
Figure 4 shows all terms used in this data sheet, with associated convention for positive values.
VDS1
VDS0
IS
VS
VDS2
VDS3
VOUT2
VOUT3
VS
IIN0
VIN0
IN0
IOUT0
OUT0
IIN1
IN1
VIN1
IIN2
IN2
VIN2
IIN3
IN3
IDEN
VIN3
IOUT1
OUT1
VDEN
DEN
DSEL0
IDSEL1
VDSEL0
IOUT2
OUT2
IDSEL0
IIS
VDSEL1
DSEL1
IOUT3
OUT3
IS
VIS
GND
IGND
VOUT0
VOUT1
voltage and current convention.vsd
Figure 4
Datasheet
Voltage and current definition
8
Rev. 1.00
2019-03-09
PROFET™+ 24V
BTT6200-4ESA
Electrical characteristics and parameters
4
Electrical characteristics and parameters
4.1
Absolute maximum ratings
Table 3
Absolute maximum ratings1)
TJ = -40°C to 150°C; (unless otherwise specified)
Parameter
Symbol
Values
Min.
Typ.
Unit
Note or Test
Condition
Number
Max.
Supply voltages
Supply voltage
VS
-0.3
–
48
V
–
P_4.1.1
Reverse polarity voltage
-VS(REV)
0
–
28
V
t < 2 min
TA = 25°C
RL ≥ 47 Ω
ZGND = Diode
+27 Ω
P_4.1.2
Supply voltage for short
circuit protection
VBAT(SC)
0
–
36
V
RSupply = 10 mΩ
P_4.1.3
LSupply = 5 µH
RECU= 20 mΩ
RCable= 16 mΩ/m
LCable= 1 µH/m,
l = 0 or 5 m
See Chapter 6 and
Figure 29
–
–
65
V
2) R
Supply voltage for Load dump VS(LD)
protection
I=2Ω
P_4.1.12
RL = 47 Ω
Short circuit capability
nRSC1
–
–
100
k cycles
3)_
P_4.1.4
Voltage at INPUT pins
VIN
-0.3
–
–
6
7
V
–
t < 2 min
P_4.1.13
Current through INPUT pins
IIN
-2
–
2
mA
–
P_4.1.14
Voltage at DEN pin
VDEN
-0.3
–
–
6
7
V
–
t < 2 min
P_4.1.15
Current through DEN pin
IDEN
-2
–
2
mA
–
P_4.1.16
Permanent short circuit
IN pin toggles
Input pins
1
2
3
Not subject to production test. Specified by design.
VS(LD) is setup without the DUT connected to the generator per ISO 7637-1.
Threshold limit for short circuit failures: 100 ppm. Please refer to the legal disclaimer for short-circuit
capability at the end of this document.
Datasheet
9
Rev. 1.00
2019-03-09
PROFET™+ 24V
BTT6200-4ESA
Electrical characteristics and parameters
Table 3
Absolute maximum ratings1) (continued)
TJ = -40°C to 150°C; (unless otherwise specified)
Parameter
Symbol
Values
Min.
Typ.
Unit
Note or Test
Condition
Number
Max.
Voltage at DSEL pin
VDSEL
-0.3
–
–
6
7
V
–
t < 2 min
P_4.1.17
Current through DSEL pin
IDSEL
-2
–
2
mA
–
P_4.1.18
Voltage at IS pin
VIS
-0.3
–
VS
V
–
P_4.1.19
Current through IS pin
IIS
-25
–
50
mA
–
P_4.1.20
Load current
| IL |
–
–
IL(LIM)
A
–
P_4.1.21
Power dissipation (DC)
PTOT
–
–
1.8
W
TA = 85°C
TJ < 150°C
P_4.1.22
Maximum energy dissipation
Single pulse (one channel)
EAS
–
–
20
mJ
IL(0) = 1 A
TJ(0) = 150°C
VS = 28 V
P_4.1.23
Voltage at power transistor
VDS
–
–
65
V
–
P_4.1.26
I GND
-20
-150
–
20
20
mA
–
t < 2 min
P_4.1.27
Junction temperature
TJ
-40
–
150
°C
–
P_4.1.28
Storage temperature
TSTG
-55
–
150
°C
–
P_4.1.30
VESD
-2
–
2
kV
4) HBM
P_4.1.31
ESD susceptibility OUT pin vs. VESD
GND and VS connected
-4
–
4
kV
4) HBM
P_4.1.32
ESD susceptibility
VESD
-500
–
500
V
5) CDM
P_4.1.33
ESD susceptibility pin
(corner pins)
VESD
-750
–
750
V
5) CDM
P_4.1.34
Sense pin
Power stage
Currents
Current through ground pin
Temperatures
ESD susceptibility
ESD susceptibility (all pins)
Notes:
1.
Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
1
4
5
Not subject to production test. Specified by design.
ESD susceptibility Human Body Model "HBM" according to AEC Q100-002
ESD susceptibility Charged Device Model "CDM" according to AEC Q100-011
Datasheet
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Electrical characteristics and parameters
2.
Integrated protection functions are designed to prevent IC destruction under fault conditions described in
the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions
are not designed for continuous repetitive operation.
4.2
Functional range
Table 4
Functional range
TJ = -40°C to 150°C; (unless otherwise specified)
Parameter
Symbol
Values
Min.
Typ.
Unit
Note or Test
Condition
Number
Max.
Nominal operating voltage
VNOM
8
28
36
V
–
P_4.2.1
Extended operating voltage
VS(OP)
5
–
48
V
7) V = 4.5 V
IN
P_4.2.2
RL = 47 Ω
VDS < 0.5 V
Minimum functional supply
voltage
VS(OP)_MIN
Undervoltage shutdown
VS(UV)
3.8
4.3
5
V
6) V
IN = 4.5 V
P_4.2.3
RL = 47 Ω
From IOUT = 0 A
to
VDS < 0.5 V; see
Figure 16
3
3.5
4.1
V
6) V
IN = 4.5 V
P_4.2.4
VDEN = 0 V
RL = 47 Ω
From VDS < 1 V;
to IOUT = 0 A
See Chapter 9.1
and Figure 16
Undervoltage shutdown
hysteresis
VS(UV)_HYS
–
850
–
mV
7) –
P_4.2.13
Operating current
One channel active
IGND_1
–
2
4
mA
VIN = 5.5 V
VDEN = 5.5 V
Device in RDS(ON)
VS = 36 V
See Chapter 9.1
P_4.2.5
7
6
Not subject to production test. Specified by design.
Test at TJ = -40°C only.
Datasheet
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BTT6200-4ESA
Electrical characteristics and parameters
Table 4
Functional range (continued)
TJ = -40°C to 150°C; (unless otherwise specified)
Parameter
Symbol
Values
Min.
Typ.
Unit
Note or Test
Condition
Number
Max.
Operating current
All channels active
IGND_4
–
6
9
mA
VIN = 5.5 V
VDEN = 5.5 V
Device in RDS(ON)
VS = 36 V
See Chapter 9.1
P_4.2.6
Standby current for whole
device with load (ambient)
IS(OFF)
–
0.1
0.5
µA
6) V
P_4.2.7
Maximum standby current for
whole device with load
IS(OFF)_150
–
–
20
µA
VS = 36 V
VOUT = 0 V
VIN floating
VDEN floating
TJ = 150 °C
P_4.2.10
Standby current for whole
device with load, diagnostic
active
IS(OFF_DEN)
–
0.6
–
mA
7) V = 36 V
S
P_4.2.8
Note:
S = 36 V
VOUT = 0 V
VIN floating
VDEN floating
TJ ≤ 85 °C
VOUT = 0 V
VIN floating
VDEN = 5.5 V
Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table.
4.3
Thermal resistance
Table 5
Thermal resistance
Parameter
Symbol
Values
Min.
Typ.
Unit
Note or Test
Condition
Number
Max.
Junction to case
RthJC
–
3
–
K/W
8)
P_4.3.1
Junction to ambient
All channels active
RthJA
–
28
–
K/W
8)9)
P_4.3.2
6
7
8
Test at TJ = -40°C only.
Not subject to production test. Specified by design.
Not subject to production test. Specified by design.
Datasheet
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BTT6200-4ESA
Electrical characteristics and parameters
4.3.1
PCB set-up
70µm
1.5mm
35µm
0.3mm
PCB 2s2p.vsd
Figure 5
2s2p PCB cross section
Figure 6
PC board top and bottom view for thermal simulation with 600 mm2 cooling area
9
Specified Rthja value is according to JEDEC JESD51-2,-5,-7 at natural convection on FR4 2s2p board with 1
W power dissipation equally dissipated for all channel at TA = 105°C ; The product (chip + package) was
simulated on a 76.4 mm x 114.3 mm x 1.5 mm board with 2 inner copper layers (2 x 70 μm Cu, 2 x 35 μm
Cu). Where applicable, a thermal via array under the exposed pad contacts the first inner copper layer.
Please refer to Figure 5 .
Datasheet
13
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PROFET™+ 24V
BTT6200-4ESA
Electrical characteristics and parameters
4.3.2
Thermal impedance
BTT6200-4ESA
100
ZthJA (K/W)
TAMBIENT = 105°C
10
1
2s2p
1s0p - 600 mm²
1s0p - 300 mm²
1s0p - footprint
0,1
0,0001
Figure 7
0,001
0,01
0,1
1
Time (s)
10
100
1000
Typical thermal impedance. 2s2p PCB set-up according to Figure 5
BTT6200-4ESA
120
1s0p - Tambient = 105°C
110
100
RthJA (K/W)
90
80
70
60
50
40
30
0
Figure 8
Datasheet
100
200
300
Cooling area (mm²)
400
500
600
Typical thermal resistance. PCB set-up 1s0p
14
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Power stage
5
Power stage
The power stages are built using an N-channel vertical power MOSFET (DMOS) with charge pump.
5.1
Output ON-state resistance
The ON-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature TJ. Figure 9
shows the dependencies in terms of temperature and supply voltage for the typical ON-state resistance. The
behavior in reverse polarity is described in Chapter 6.4.
Figure 9
Typical ON-state resistance
A high signal at the input pin (see Chapter 8) causes the power DMOS to switch ON with a dedicated slope,
which is optimized in terms of EMC emission.
5.2
Turn ON/OFF characteristics with resistive load
Figure 10 shows the typical timing when switching a resistive load.
IN
VIN_H
VIN_L
t
VOUT
dV/dt ON
dV/dt OFF
t ON
90% VS
tOFF_delay
70% VS
30% VS
10% VS
tON_delay
tOFF
t
Switching times.vsd
Figure 10
Datasheet
Switching a resistive load timing
15
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BTT6200-4ESA
Power stage
5.3
Inductive load
5.3.1
Output clamping
When switching OFF inductive loads with high side switches, the voltage VOUT drops below ground potential,
because the inductance intends to continue driving the current. To prevent the destruction of the device by
avalanche due to high voltages, there is a voltage clamp mechanism ZDS(AZ) implemented that limits negative
output voltage to a certain level (VS - VDS(AZ)). Please refer to Figure 11 and Figure 12 for details. Nevertheless,
the maximum allowed load inductance is limited.
VS
ZDS(AZ)
INx
VDS
LOGIC
IL
VBAT
GND
VIN
OUTx
L, RL
ZGND
VOUT
Output_clamp.vsd
Figure 11
Output clamp
IN
t
VOUT
VS
t
VS-VDS(AZ)
IL
t
Switching an inductance.vsd
Figure 12
Datasheet
Switching an inductive load timing
16
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BTT6200-4ESA
Power stage
5.3.2
Maximum load inductance
During demagnetization of inductive loads, energy has to be dissipated in the BTT6200-4ESA. This energy can
be calculated with following equation:
E = V DS AZ ⋅
L
RL
⋅
V S − V DS AZ
RL
⋅ ln 1 −
RL ⋅ IL
V S − V DS AZ
+ IL
Equation 1
The following equation simplifies under the assumption of RL = 0 Ω.
E=
VS
1
⋅ L ⋅ I2 ⋅ 1 −
2
V S − V DS AZ
Equation 2
The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 13 for
the maximum allowed energy dissipation as a function of the load current.
Figure 13
Maximum energy dissipation single pulse, TJ_START = 150°C; VS = 28 V
5.4
Inverse current capability
In case of inverse current, meaning a voltage VINV at the OUTput higher than the supply voltage VS, a current IINV
will flow from output to VS pin via the body diode of the power transistor (please refer to Figure 14). The output
stage follows the state of the IN pin, except if the IN pin goes from OFF to ON during inverse. In that particular
case, the output stage is kept OFF until the inverse current disappears. Nevertheless, the current IINV should not
be higher than IL(INV). If the channel is OFF, the diagnostic will detect an open load at OFF. If the affected channel
is ON, the diagnostic will detect open load at ON (the overtemperature signal is inhibited). At the appearance of
VINV, a parasitic diagnostic can be observed. After, the diagnosis is valid and reflects the output state. At VINV
vanishing, the diagnosis is valid and reflects the output state. During inverse current, no protection functions
are available.
Datasheet
17
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PROFET™+ 24V
BTT6200-4ESA
Power stage
VBAT
VS
Gate
driver
Device
logic
INV
Comp.
VINV
IL(INV)
OUT
GND
ZGND
inverse current.vsd
Figure 14
Inverse current circuitry
5.5
Electrical characteristics - power stage
Table 6
Electrical characteristics: Power stage
VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25°C
Parameter
Symbol
Values
Min.
Typ.
Unit
Note or Test
Condition
Number
Max.
ON-state resistance per channel
RDS(ON)_150
300
360
400
mΩ
IL = IL4 = 1 A
VIN = 4.5 V
TJ = 150°C
See Figure 9
P_5.5.1
ON-state resistance per channel
RDS(ON)_25
–
200
–
mΩ
10)T
P_5.5.21
Nominal load current One
channel active
IL(NOM)1
–
1.5
–
A
10) T
Nominal load current All
channels active
IL(NOM)2
J = 25 °C
A = 85°C
P_5.5.2
TJ < 150°C
–
1
–
A
Output voltage drop limitation at VDS(NL)
small load currents
–
10
22
mV
IL = IL0 = 25 mA
See Chapter 9.3
P_5.5.4
Drain to source clamping voltage VDS(AZ)
VDS(AZ) = [VS - VOUT]
65
70
75
V
IDS = 5 mA
See Figure 12
See Chapter 9.1
P_5.5.5
Output leakage current per
channel TJ ≤ 85 °C
–
0.1
0.5
µA
11) V floating
IN
P_5.5.6
10
11
IL(OFF)
P_5.5.3
VOUT = 0 V
TJ ≤ 85°C
Not subject to production test, specified by design.
Test at TJ = -40°C only
Datasheet
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PROFET™+ 24V
BTT6200-4ESA
Power stage
Table 6
Electrical characteristics: Power stage (continued)
VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25°C
Parameter
Symbol
Values
Min.
Typ.
Unit
Note or Test
Condition
Number
Max.
Output leakage current per
channel TJ = 150 °C
IL(OFF)_150
–
1
5
µA
VIN floating
VOUT = 0 V
TJ = 150°C
P_5.5.8
Inverse current capability
IL(INV)
–
1
–
A
10)V
S< VOUTX See
Figure 14
P_5.5.9
Slew rate
30% to 70% VS
dV/dtON
0.3
0.8
1.3
V/µs
P_5.5.11
Slew rate
70% to 30% VS
-dV/dtOFF
0.3
0.8
1.3
V/µs
RL = 47 Ω
VS = 28 V
See Figure 10
See Chapter 9.1
Slew rate matching
dV/dtON - dV/dtOFF
ΔdV/dt
-0.15
0
0.15
V/µs
P_5.5.13
Turn-ON time to VOUT = 90% VS
tON
20
70
150
µs
P_5.5.14
Turn-OFF time to VOUT = 10% VS
tOFF
20
70
150
µs
P_5.5.15
Turn-ON / OFF matching
tOFF - tON
ΔtSW
-50
0
50
µs
P_5.5.16
Turn-ON time to VOUT = 10% VS
tON_delay
–
35
70
µs
P_5.5.17
Turn-OFF time to VOUT = 90% VS
tOFF_delay
–
35
70
µs
P_5.5.18
Switch ON energy
EON
–
190
–
µJ
10) R = 47 Ω
L
P_5.5.12
P_5.5.19
VOUT = 90% VS
VS = 36 V
See Chapter 9.1
Switch OFF energy
EOFF
–
210
–
µJ
10) R = 47 Ω
L
P_5.5.20
VOUT = 10% VS
VS = 36 V
See Chapter 9.1
10
Not subject to production test, specified by design.
Datasheet
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BTT6200-4ESA
Protection functions
6
Protection functions
The device provides integrated protection functions. These functions are designed to prevent the destruction of
the IC from fault conditions described in the data sheet. Fault conditions are considered as “outside” normal
operating range. Protection functions are designed for neither continuous nor repetitive operation.
6.1
Loss of ground protection
In case of loss of the module ground and the load remains connected to ground, the device protects itself by
automatically turning OFF (when it was previously ON) or remains OFF, regardless of the voltage applied on IN
pins.
In case of loss of device ground, it’s recommended to use input resistors between the microcontroller and the
BTT6200-4ESA to ensure switching OFF of channels.
In case of loss of module or device ground, a current (IOUT(GND)) can flow out of the DMOS. Figure 15 sketches
the situation.
ZGND is recommended to be a resistor in series to a diode .
VS
ZIS(AZ)
ZD(AZ)
IS
RSENSE
VBAT
ZDS(AZ)
DSEL0
RDSEL
DSEL1
RDSEL
DEN
RDEN
LOGIC
INx
RIN
IOUT(GND)
OUTx
ZDESD
GND
RIS
IS
ZGND
Loss of ground protection.vsd
Figure 15
Loss of ground protection with external components
6.2
Undervoltage protection
Between VS(UV) and VS(OP), the undervoltage mechanism is triggered. VS(OP) represents the minimum voltage
where the switching ON and OFF can takes place. VS(UV) represents the minimum voltage the switch can hold
ON. If the supply voltage is below the undervoltage mechanism VS(UV), the device is OFF (turns OFF). As soon as
the supply voltage is above the undervoltage mechanism VS(OP), then the device can be switched ON. When the
switch is ON, protection functions are operational. Nevertheless, the diagnosis is not guaranteed until VS is in
the VNOM range. Figure 16 illustrates the undervoltage mechanism.
Datasheet
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PROFET™+ 24V
BTT6200-4ESA
Protection functions
VOUT
undervoltage behavior.vsd
VS(UV)
Figure 16
Undervoltage behavior
6.3
Overvoltage protection
VS(OP)
VS
There is an integrated clamp mechanism for overvoltage protection (ZD(AZ)). To guarantee this mechanism
operates properly in the application, the current in the Zener diode has to be limited by a ground resistor.
Figure 17 shows a typical application to withstand overvoltage issues. In case of supply voltage higher than
VS(AZ), the power transistor switches ON and in addition the voltage across the logic section is clamped. As a
result, the internal ground potential rises to VS - VS(AZ). Due to the ESD Zener diodes, the potential at pin INx,
DSELx, and DEN rises almost to that potential, depending on the impedance of the connected circuitry. In the
case the device was ON, prior to overvoltage, the BTT6200-4ESA remains ON. In the case the BTT6200-4ESA was
OFF, prior to overvoltage, the power transistor can be activated. In the case the supply voltage is in above
VBAT(SC) and below VDS(AZ), the output transistor is still operational and follows the input. If at least one channel
is in the ON state, parameters are no longer guaranteed and lifetime is reduced compared to the nominal supply
voltage range. This especially impacts the short circuit robustness, as well as the maximum energy EAS
capability. ZGND is recommended to be a resistor in series to a diode.
Datasheet
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BTT6200-4ESA
Protection functions
ISOV
ZIS(AZ)
VS
ZD(AZ)
IS
RSENSE
VBAT
ZDS(AZ)
DSEL0
RDSEL
DSEL1
RDSEL
DEN
RDEN
LOGIC
INx
RIN
OUTx
ZDESD
RIS
GND
ZGND
Overvoltage protection.vsd
Figure 17
Overvoltage protection with external components
6.4
Reverse polarity protection
In case of reverse polarity, the intrinsic body diodes of the power DMOS causes power dissipation. The current
in this intrinsic body diode is limited by the load itself. Additionally, the current into the ground path and the
logic pins has to be limited to the maximum current described in Chapter 4.1 with an external resistor. Figure
18 shows a typical application. RGND resistor is used to limit the current in the Zener protection of the device.
Resistors RDSEL, RDEN, and RIN are used to limit the current in the logic of the device and in the ESD protection
stage. RSENSE is used to limit the current in the sense transistor which behaves as a diode. The recommended
value for RDEN = RDSEL = RIN = RSENSE = 10 kΩ. It is recommended to use a resistor in series to a diode in the
ground path.
During reverse polarity, no protection functions are available.
Datasheet
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BTT6200-4ESA
Protection functions
Microcontroller
protection diodes
ZIS(AZ)
VS
ZD(AZ)
IS
RSENSE
ZDS(AZ)
VDS(REV)
DSEL0
RDSEL0
DSEL1
RDSEL1
DEN
RDEN
LOGIC
INx
RIN
-VS(REV)
IN0
OUTx
ZDESD
GND
IS
RGND
L,RL
RIS
D
Reverse Polarity.vsd
Figure 18
Reverse polarity protection with external components
6.5
Overload protection
In case of overload, such as high inrush of cold lamp filament, or short circuit to ground, the BTT6200-4ESA
offers several protection mechanisms.
6.5.1
Current limitation
At first step, the instantaneous power in the switch is maintained at a safe value by limiting the current to the
maximum current allowed in the switch IL(SC). During this time, the DMOS temperature increases, which affects
the current flowing in the DMOS.
6.5.2
Temperature limitation in the power DMOS
Each channel incorporates both an absolute (TJ(SC)) and a dynamic (TJ(SW)) temperature sensor. Activation of
either sensor will cause an overheated channel to switch OFF to prevent destruction. Any protective switch OFF
latches the output until the temperature has reached an acceptable value which is depicted in Figure 19.
No retry strategy is implemented such that when the DMOS temperature has cooled down enough, the switch is
switched ON again. Only the IN pin signal toggling can re-activate the power stage (latch behavior).
Datasheet
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BTT6200-4ESA
Protection functions
IN
t
IL
LOAD CURRENT LIMITATION PHASE
IL(x)SC
LOAD CURRENT BELOW
LIMITATION PHASE
IL(NOM)
t
TDMOS
TJ(SC)
Temperature
protection phase
TJ(SW)
TA
tsIS(FAULT)
t
tsIS(OC_blank)
IIS
IIS(FAULT)
IL(NOM) / kILIS
0A
VDEN
t
tsIS(OFF)
0V
t
Hard start.vsd
Figure 19
Note:
Datasheet
Overload protection
For better understanding, the time scale is not linear. The real timing of this drawing is application
dependant and cannot be described.
24
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Protection functions
6.6
Electrical characteristics for the protection functions
Table 7
Electrical Characteristics: Protection
VS = 8 V to 36 V, TJ = -40°C to 150°C, (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25°C
Parameter
Symbol
Values
Min.
Typ.
Unit
Note or Test
Condition
Number
mA
12)13)V = 28 V
S
P_6.6.1
Max.
Loss of ground
Output leakage current while
GND disconnected
IOUT(GND)
–
0.1
–
See Figure 15
Reverse polarity
Drain source diode voltage
during reverse polarity
VDS(REV)
200
650
700
mV
14)I
L=-1A
P_6.6.2
See Figure 18
Overvoltage
Overvoltage protection
VS(AZ)
65
70
75
V
ISOV = 5 mA
See Figure 17
P_6.6.3
Load current limitation
IL5(SC)
9
11
14
A
15)V
P_6.6.4
Dynamic temperature increase
while switching
ΔTJ(SW)
–
80
–
K
16)See Figure 19
P_6.6.8
Thermal shutdown temperature TJ(SC)
150
170
200
°C
14)See Figure 19
P_6.6.10
Thermal shutdown hysteresis
–
30
–
K
13)
P_6.6.11
Overload condition
12
13
14
15
16
ΔTJ(SC)
DS = 5 V See
Figure 19 and
Chapter 9.3
All pins are disconnected except VS and OUT.
Not Subject to production test, specified by design.
Test at TJ = +150°C only.
Test at TJ = -40°C only.
Functional test only
Datasheet
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PROFET™+ 24V
BTT6200-4ESA
Diagnostic functions
7
Diagnostic functions
For diagnosis purposes, the BTT6200-4ESA provides a combination of digital and analog signals at pin IS. These
signals are called SENSE. In case the diagnostic is disabled via DEN, pin IS becomes high impedance. In case
DEN is activated, the sense current of the channel X is enabled/disabled via associated pins DSEL0 and DSEL1.
Table 8 gives the truth table.
Table 8
Diagnostic truth table
DEN
DSEL1
DSEL0
IS
0
don't care
don't care
Z
Z
Z
Z
1
0
0
IIS(0)
0
0
0
1
0
1
0
IIS(1)
0
0
1
1
0
0
0
IIS(2)
0
1
1
1
0
0
0
IIS(3)
7.1
IS pin
The BTT6200-4ESA provides a sense signal called IIS at pin IS. As long as no “hard” failure mode occurs (short
circuit to GND / current limitation / overtemperature / excessive dynamic temperature increase or open load at
OFF) a proportional signal to the load current (ratio kILIS = IL / IIS) is provided. The complete IS pin and diagnostic
mechanism is described in Figure 20. The accuracy of the sense current depends on temperature and load
current. The sense pin multiplexes the currents IIS(0), IIS(1), IIS(2) and IIS(3) via the pins DSEL0 and DSEL1. Thanks to
this multiplexing, the matching between kILISCHANNEL0, kILISCHANNEL1, kILISCHANNEL2 and kILISCHANNEL3 is optimized.
Due to the ESD protection, in connection to VS, it is not recommended to share the IS pin with other devices if
these devices are using another battery feed. The consequence is that the unsupplied device would be fed via
the IS pin of the supplied device.
VS
IIS0 =
IL0 / k ILIS
IIS(FAULT)
IIS1 =
IL1 / kILIS
IIS2 =
I L2 / kILIS
IIS3 =
IL3 / kILIS
ZIS(AZ)
0
0
IS
0
FAULT
1
1
1
0
DEN
FAULT
1
DSEL1
DSEL0
Figure 20
Datasheet
Sense schematic.vsd
Diagnostic block diagram
26
Rev. 1.00
2019-03-09
PROFET™+ 24V
BTT6200-4ESA
Diagnostic functions
7.2
SENSE signal in different operating modes
Table 9 gives a quick reference for the state of the IS pin during device operation.
Table 9
Sense signal, function of operation mode
Operation mode
Input level
channel x
DEN17)
Output level
Diagnostic
output
Normal operation
OFF
H
Z
Z
Short circuit to
GND
~GND
Z
Overtemperature
Z
Z
Short circuit to VS
VS
IIS(FAULT)
Open load
< VOL(OFF)18)
Z
> VOL(OFF)18)
IIS(FAULT)
~VINV
IIS(FAULT)
~VS
IIS = IL / kILIS
Current limitation
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